Bismuth germanate and bismuth silicate glasses in cryogenic detectors

We present and discuss the results of measurements of conductivity and secondary electron emission coefficient of Bi_xGe_1−xO_2−0.5x (where x=0.13, 0.23, 0.33, 0.47) and Bi_xSi_1−xO_2−0.5x (where x=0.47, 0.57, 0.67) glasses reduced in hydrogen. The surface conductivity of reduced glasses strongly depends on reduction temperature, reduction time and bismuth content. The temperature dependence of the surface conductivity in a high temperature regime is well described by σ∼exp[−(T₀/T)ⁿ] law where n=1/4. The secondary electron emission coefficient of reduced glasses is practically independent of the degree of reduction but increases when binary glasses are modified by alkali ions. The research results confirmed that bismuth silicate and bismuth germanate glasses modified by alkali ions may be good materials for detectors working in cryogenic temperature.     

Fragility in mixed alkali tellurites

Linear viscoelastic stress relaxation and calorimetric measurements were performed on a series of mixed alkali tellurite glasses of composition 0.3([xNa₂O+(1−x)Li₂O])+0.7TeO₂ at temperatures near and above the glass transition temperature, T_g. The stress relaxation data were well described by the stretched exponential function, G(t)=G₀exp[−(t/τ)^β], where τ is the relaxation time, β is the distribution of relaxation times and G₀ is the high frequency modulus. The fragility, determined from the temperature dependence of τ, exhibited a minimum in the middle of the mixed alkali composition. A possible connection between the kinetic and the thermodynamic dimensions of this system was established, wherein the heat capacity change at the T_g, ΔC_p(T_g), and the fragility are correlated.     

Proton-Conducting Composites Based on the Cs<Subscript>4</Subscript>(HSO<Subscript>4</Subscript>)<Subscript>3</Subscript>(H<Subscript>2</Subscript>PO<Subscript>4</Subscript>) Compound

Proton-conducting composites xCs₄(HSO₄)₃(H₂PO₄) + (1–x)AlPO₄ in the composition range x = 0.9–0.5 have been obtained. Their transport properties are studied by impedance spectroscopy. The dependences of the phase composition of the materials on the component ratio are investigated by X-ray diffraction analysis. The spatial phase distribution in the materials is analyzed using scanning electron microscopy.     

Electron spin resonance of Mn2+ IN As–Se and As–Te glasses

The electron spin resonance of Mn has been studied in As_xSe_100?x with 0 ? x ? 70 and As_xTe_100?x with 40 ? x ? 70. All samples, except those with x < 20 in As_xSe_100?x, exhibit six hyperfine lines centered at g = 4.3. A g = 2.0 line is observed in As–Se with largely scattered linewidth by samples, but not in As–Te unless oxygen contamination is included in the samples. The g = 4.3 line in As–Se is closely related to a formation of As₂Se₃-type layer structure and interpreted as being caused by Mn situated at the interlayer position and surrounded by four Se atoms in an arrangement of rhombic symmetry. In As–Te, a similar model by four Te atoms is valid in composition near As₂Te₃, but the surrounding Te is replaced by As as As content increases. The g = 2.0 line is concluded to come from phase-separated antiferromagnetic particles of Mn–O and MnSe. The linewidth is scattere by differences in the relative amounts of the two kinds of particles and in particle size.     

The effect of composition on UV-vis-NIR spectra of iron doped glasses in the systems Na2O/MgO/SiO2 and Na2O/MgO/Al2O3/SiO2

Glasses with the compositions xNa₂O · 10MgO · (90 − x)SiO₂, 10Na₂O · xMgO · (90 − x)SiO₂, 5Na₂O · 15MgO · xAl₂O₃ · (80 − x)SiO₂, xNa₂O · 10MgO · 10Al₂O₃ · (80 − x)SiO₂, 10Na₂O · 10MgO · xAl₂O₃ · (80 − x)SiO₂, 10Na₂O · 5MgO · 10Al₂O₃ · (80 − x)SiO₂ were melted and studied using UV-vis-NIR spectroscopy in the wavenumber range from 5000 to 30 000 cm⁻¹. At [Al₂O₃] > [Na₂O], the UV-cut off is strongly shifted to smaller wavenumbers and the NIR peak at around 10 000 cm⁻¹ attributed to Fe²⁺ in sixfold coordination gets narrower. Furthermore, the intensity of the NIR peak at 5500 cm⁻¹ increases. This is explained by the incorporation of iron in the respective glass structures.     

Intermediate-range order in glassy GexSe1−x around the stiffness transition composition

X-ray scattering measurements on glassy Ge_xSe_1−x were performed in a concentration range x=0.07-0.333 in fine steps of 0.005-0.05, in order to explore the relation between the intermediate-range order (IRO) and the stiffness transition in this glassy system. The oscillations beyond the first peak around 20.5 nm⁻¹ in the structure factor, S(Q), remain almost unchanged or damp very slowly with decreasing the Ge concentration x, suggesting the preserve of the short-range order. On the other hand, the pre-peak around 10-12 nm⁻¹, indicating the existence of IRO, systematically changes with decreasing x; its Q position shifts towards the higher Q values and its area decreases. Especially near the onset of the stiffness transition, x=0.20, the peak position starts to deviate from the linear relation. The origin of the pre-peak is discussed in connection with results of a recent anomalous X-ray scattering measurement indicating two contributions of Ge-Ge and Se-Se correlations. Around the onset composition of the stiffness transition, the area of the pre-peak associated with the Ge-Ge correlation has a plateau-like gradual decrease with x followed by a rapid decrease at x<0.18, which is in good agreement with Raman data.     

Formation and stability of nickel-zirconium glasses

Glasses may be formed in two composition ranges: 33–42 and 60–76 at.% Zr. The crystallisation temperatures (T_x), activation energies (Q_x), crystallisation morphologies, densities, Young's moduli and peak in the X-ray diffraction pattern (Q_p) are reported as a function of composition. T_x, Q_x and Q_p do not interpolate smoothly between the two composition ranges. Maximum thermal stability occurs at 36 at.% Zr, well away from the value predicted by the free electron approach of Nagel and Tauc. The glasses are denser than would be expected from a simple dense random packing of hard spheres. Some implications for the structure of all-metal glasses are discussed.     

Dielectric study and ac conductivity of iron sodium silicate glasses

A series of glasses with formula (SiO₂)_0.7−x(Na₂O)_0.3(Fe₂O₃)_x with ( 0.0 ≤ x ≤ 0.20) were prepared and studied by means of AC measurements in the frequency range 20 kHz to 13 MHz at room temperature. The study of frequency dependence of both dielectric constant ε' and dielectric loss ε" showed a decrease of both quantities with increasing frequency. The results have been explained on the basis of frequency assistance of electron hopping besides electron polarization. From the Cole-Cole diagram the values of the static dielectric constant ε_s, infinity dielectric constant ε_∞, macroscopic time constant τ, and molecular time constant τ_m are calculated for the studied amorphous samples. The frequency dependence of the ac conductivity obeys a power relation, that is σ_ac (ω) = Α ω^s. The obtained values of the constant s lie in the range of 0.7 ≤ s ≤ 1 in agreement with the theoretical value which confirms the simple quantum mechanical tunneling (QMT) model. The increase in ac conductivity with iron concentration is likely to arise due to structural changes occurring in the glass network. The structure of a glass with similar composition was published and showed clustering of Fe²⁺ and Fe³⁺ ions which favor electron hopping and provide pathways for charge transport.     

Crystallisation kinetics,glass forming ability and thermal stability in glassy Se100 − xInx chalcogenide alloys

Differential scanning calorimetry (DSC) studies have been done under non-isothermal conditions at different heating rates for glassy Se_100 ? xIn_x (5 ≤ x ≤ 20) alloys. DSC traces with well-defined endothermic and exothermic troughs and peaks at glass transition (T_g), crystallisation (T_c) and melting (T_m) temperatures were observed. The crystallisation kinetics parameters, Avrami index (n), activation energy for crystallisation (E_c) and frequency factor (K_o), have been calculated on the basis of the classical Johnson–Mehl–Avrami (JMA) model and related methods derived by Kissinger, Augis–Bennett and Mahedevan. Activation energy for glass transformation (E_t) has been evaluated on the usual two different non-isothermal methods developed by Moynihan and Kissinger. An extension of the Augis–Bennett method well known for evaluating E_c to calculate E_t has been explored with satisfactory results. Results obtained from these methods are in close agreement with each other. Close correlation between E_t, E_c and heating rate (β) was observed. The glass forming ability (GFA) and thermal stability parameters have been calculated for each glass system. It was found that the proportion of indium additive changed significantly the values of glass/crystal transformation, GFA and thermal stability of the studied system.     

Metamorphic growth of tensile strained GaInP on GaAs substrate

Optical and structural properties of tensile strained graded Ga_xIn_1−xP buffers grown on GaAs substrate have been studied by photoluminescence, X-ray diffraction, atomic force microscopy, and scanning electron microscopy measurements. The Ga composition in the graded buffer layers was varied from x=0.51 (lattice matched to GaAs) to x=0.66 (1% lattice mismatch to GaAs). The optimal growth temperature for the graded buffer layer was found to be about 80–100 °C lower than that for the lattice matched GaInP growth. The photoluminescence intensity and surface smoothness of the Ga_0.66In_0.34P layer grown on top of the graded buffer were strongly enhanced by temperature optimization. The relaxation of tensile GaInP was found to be highly anisotropic. A 1.5 μm thick graded buffer led to a 92% average relaxation and a room temperature photoluminescence peak wavelength of 596 nm.     

The presence of a thermally reversing window in Al-Te-Si glasses revealed by alternating differential scanning calorimetry and electrical switching studies

Alternating differential scanning calorimetric (ADSC) studies and electrical switching experiments have been undertaken on Al₁₅Te_85−xSi_x (2 ? x ? 12) system of glasses. These glasses are found to exhibit two crystallization reactions (T_c1 and T_c2), for compositions with x < 8. Above x = 8, a single-stage crystallization is seen. Further, a trough is seen in the composition dependence of non-reversing enthalpy (ΔH^NR), based on which it is proposed that there is a thermally reversing window in Al₁₅Te_85−xSi_x glasses, in the composition range 4 ? x ? 8. Electrical switching studies indicate that Al₁₅Te_85−xSi_x glasses exhibit a threshold type electrical switching at ON state currents less than 2 mA. Further, the switching voltages are found to increase with the increase in silicon content. It is interesting to note that the start (x = 4) and the end (x = 8) of the thermally reversing window are exemplified by a kink and a saturation in the composition dependence of switching voltages, respectively.     

Laser-induced crystallization of β′-RE2(MoO4)3 ferroelectrics (RE: Sm, Gd, Dy) in glasses and their surface morphologies

The glasses with the compositions of 21.25RE₂O₃-63.75MoO₃-15B₂O₃ (RE: Sm, Gd, Dy) were prepared and the formation of β′-RE₂(MoO₄)₃ ferroelectrics was confirmed in the crystallized glasses obtained through a conventional crystallization in an electric furnace. The features of the glass structure and crystallization behavior were clarified from measurements of Raman scattering spectra. Continuous-wave Nd:YAG laser with a wavelength of 1064 nm (laser power: 0.6-0.9 W, laser scanning speed: S = 1-16 μm/s) was irradiated to 10.625Sm₂O₃-10.625Gd₂O₃ (or Dy₂O₃)-63.75MoO₃-15B₂O₃ glasses, and the structural modification was induced at the glass surface. At the scanning speed of S = 10 μm/s, crystal lines consisting of β′-Gd_2−xSm_x(MoO₄)₃ or β′-Dy_2−xSm_x(MoO₄)₃ crystals were patterned on the glass surface. It was found that those crystal lines have the surface morphology with periodic bumps. At S = 1 μm/s, it was found that crystal lines consist of the mixture of paraelectric α-Gd_2−xSm_x(MoO₄)₃ and ferroelectric β′-Gd_2−xSm_x(MoO₄)₃ crystals, indicating the phase transformation from the β′ phase to the α phase during laser irradiation. Homogeneous crystal lines with β′-RE₂(MoO₄)₃ ferroelectrics have not been written in this study, but further research is continuing.     

Nano- and micro-indentation studies on lithium borate-barium bismuth niobate glasses

The structure and mechanical properties of multifunctional lithium tetra-borate based glasses and glass-ceramics of the system (100 − x) Li₂B₄O₇₋x(BaO-Bi₂O₃-Nb₂O₅) with x = 10, 20 and 30 in molar ratio, have been characterized. Nano- and micro-indentation techniques were employed to evaluate the elastic modulus, hardness and toughness of the as-cast and annealed glasses. These were complemented with detailed structural investigations using X-ray diffraction, microscopy (optical, scanning electron and high resolution transmission electron microscopies) and nuclear magnetic resonance spectroscopy. These investigations reveal a smooth variation of the mechanical properties with composition except for the composition corresponding to x = 20. This deviation has been attributed to subtle changes in the glass-structure due to amorphous phase-separation and heat-treatment-assisted nano-crystallization.     

Calculation of phase diagrams in AlxIn1−xAs/InP,AsxSb1−xAl/InP and AlxIn1−xSb/InSb nano-film systems

The models for calculation of phase diagrams of semiconductor thin films with different substrates were proposed by considering the contributions of strain energy, the self-energy of misfit dislocations and surface energy to Gibbs free energy. The phase diagrams of the Al_xIn_1−xAs and As_xSb_1−xAl thin films grown on the InP (1 0 0) substrate, and the Al_xIn_1−xSb thin films grown on the InSb (1 0 0) substrate at various thicknesses were calculated. The calculated results indicate that when the thickness of film is less than 1 μm, the strain-induced zinc-blende phase appears, the region of this phase extends with decreasing of the layer thickness, and there is small effect of surface energies of liquid and solid phases on the phase diagrams.     

Optical phonons and Raman scattering in ternary II–VI spheroidal nanocrystals embedded in a glass matrix

Theoretical and experimental studies of the spatial phonon confinement in ternary CdS_xSe_1−x nanocrystals embedded in a glass matrix formed by the composites (40)SiO₂₋(30)Na₂CO₃–(29)B₂O₃–(1)Al₂O₃ (mol%) + [(2)CdO + (2)S + (2)Se] (wt%) were carried out. From the analysis of the surface phonon modes, the theoretical procedure has allowed the determination of the geometrical characteristics of the nanocrystals. The calculated frequencies were compared with the experimental values obtained from the Raman spectra of CdS_xSe_1−x nanocrystals grown under different thermal treatments. A good correlation between the experimental and calculated CdS-like and CdSe-like surface optical modes was observed. The Raman selection rules and their connection with the nature of the surface optical phonons is discussed in order to use Raman spectroscopy as a probe to determine the composition x and the geometrical shape of the semiconductor nanocrystals.     

The effect of annealing on the surface morphology of strained and unstrained InxAl1−xN thin films

In_xAl_1−xN is a particularly useful group-III nitride alloy because by adjusting its composition it can be lattice matched to GaN. Such lattice-matched layers may find application in distributed Bragg reflectors (DBRs) and high electron mobility transistors (HEMTs). However, compared with other semiconducting nitride alloys, In_xAl_1-xN has not been researched extensively. In this study, thin In_xAl_1−xN epilayers were grown by metal-organic vapour phase epitaxy (MOVPE) on GaN and Al_yGa_1−yN layers. Samples were subjected to annealing at their growth temperature of 790 °C for varying lengths of time, or alternatively to a temperature ramp to 1000 °C. Their subsequent surface morphologies were analysed by atomic force microscopy (AFM). For both unstrained In_xAl_1−xN epilayers grown on GaN and compressively strained epilayers grown on Al_yGa_1−yN, surface features and fissures were seen to develop as a consequence of thermal treatment, resulting in surface roughening. It is possible that these features are caused by the loss of In-rich material formed on spinodal decomposition. Additionally, trends seen in the strained In_xAl_1−xN layers may suggest that the presence of biaxial strain stabilises the alloy by suppressing the spinode and shifting it to higher indium compositions.     

Crystal growth,structure, crystalline perfection and characterization of zinc magnesium ammonium sulfate hexahydrate mixed crystals ZnxMg(1−x)(NH4)2(SO4)2·6H2O

Mixed crystals Zn_xMg_(1?x)(NH₄)₂(SO₄)₂·6H₂O of the two well-known Tutton's salts Zn(NH₄)₂(SO₄)₂·6H₂O and Mg(NH₄)₂(SO₄)₂·6H₂O were grown with varying molar proportions (x=0.10–0.90) by slow evaporation solution growth technique. The mixed crystal Zn_0.54Mg_0.46(NH₄)₂(SO₄)₂·6H₂O is crystallizing in monoclinic system with space group P2₁/c and cell parameters a=6.2217(4) Å, b=12.5343(7) Å, c=9.2557(6) Å, β=106.912(3)°. The coexistence of zinc and magnesium ions in the mixed crystal was confirmed by inductively coupled plasma (ICP), atomic absorption spectroscopy (AAS) and energy dispersive X-ray spectroscopy (EDS). Compositional dependence of lattice parameters follows Vegard's relations. Slight variations are observed in FT-IR and XRD of pure and mixed crystals. Comparison of crystalline perfection as evaluated by high-resolution X-ray diffraction (HRXRD) for mixed crystals of various proportions reveals a reasonably good crystalline perfection for the mixed crystal with nearly equimolar ratio of Zn and Mg. The surface morphology of the mixed crystals changing with composition was studied by scanning electron microscopy (SEM). UV–vis studies reveal that the transparency of the mixed crystals was not much affected.     

γ-ray irradiation induced multiple effects on Ge–As–Se chalcogenide glasses

In this work, multiple effects of γ-ray irradiation on properties of bulk Ge–As–Se chalcogenide glasses were studied. Increased density (ρ), thermal expansion coefficient (α) and decreased optical band gap (E_opt) were observed after irradiation, depending on glass compositions. Glasses with stoichiometric (GeSe₂)_100?x(As₂Se₃)_x compositions showed linear correlations between As₂Se₃ proportion x and irradiation sensitivity, which is expressed by Δρ/ρ, Δα/α and ΔE_opt/E_opt. Nonstoichiometric glasses (Ge₂Se₃)_100?x(As₂Se₃)_x exhibited irregular variations. The phenomena are discussed in terms of chemical bonds transition and structural evolution under γ-ray irradiation.     

Luminescence of Dy3+-doped GexGa5Se(95−x) glasses

Dysprosium doped Ge_xGa₅Se_(95?x) (x = 15–30) chalcogenide glasses were synthesized in this present work. The Vis–NIR transmission spectra, photoluminescence spectra and lifetime were measured. Glasses (x = 27.5, 29.17 and 30) doped with 0.2 wt% dysprosium ions shows relatively strong emission bands at 1146 and 1343 nm when pumped at 808 nm. The emission lifetime ranged from 440 to 540 μs. The oscillator strengths and intensity parameters Ω_t (t = 2, 4 and 6) were calculated using Judd–Ofelt theory.     

Inelastic light scattering studies of silicon chemical vapor deposition (CVD) systems

Raman and resonance fluorescence spectra, determined by inelastic light scattering measurements, are used to identify molecular species and to measure their concentration gradients on a fine spatial scale throughout a CVD reactor. Raman spectra are also analyzed to give gas temperature and tempetature profiles. The temperature profiles near the leading edge of a horizontal rf heated susceptor in a laminar flow system are adequately described by using Lévêque's solution to an energy balance equation, assuming temperature-independent fluid properties. Raman spectra at room temperature of some of the compounds commonly used as source materials for Si epitaxial growth, SiCl₄, SiCl₃H, SiCl₂H₂ and Si₂Cl₆ indicate that these species are all detectable at the 10–100 ppm level and are distinguishable from each other. Measurements at 500–1300°C of these compounds reveal the presence of a common species, SiCl_x (probably SiCl₂), which exhibits a resonance flourescence spectrum at least 1000 times more intense than typical Raman spectra. SiCl_x density profile measurements above the susceptor indicate a concentration boundary layer thickness of 0.7-0.8 cm for one set of experimental conditions. SiCl_x density measurements as a function of suspector temperature are observed to vary over a range of 4 to 5 orders of magnitude, and are much higher for a SiCl₂H₂ input than for a SiCl₄ input.