Multiple phase-transition in Ge2Sb2Te5 based phase change memory cell by current–voltage measurement

A Ge₂Sb₂Te₅ based phase change memory (PCM) cell was fabricated by a standard 0.18 μm complementary metal–oxide-semiconductor technology, combined with subsequent special lift-off process. Through current–voltage measurements, the phase change from the amorphous state (high resistance state) to the face-centered cubic crystalline state and the hexagonal close-packed crystalline state (two kinds of different low resistance states) was observed. In addition to the typical phase-transition, where the PCM cell changes from initial amorphous state directly into final crystalline state, intermediate resistance states were observed during the phase changes from the high resistance state to the low resistance state.     

Smallest (∼10 nm) phase-change marks in amorphous and crystalline Ge2Sb2Te5 films

Electrical nano-scale crystallization and amorphization in amorphous and crystalline Ge₂Sb₂Te₅ films have been studied using scanning probe microscopes. In scanning tunneling microscopes, the phase changes can be induced, not by tunneling currents, but by conducting currents flowing through contacted probes. In an atomic force microscope, metallic cantilevers can produce phase-change marks with minimal sizes of ∼10 nm. The crystallization and amorphization processes show different dependences upon thickness of Ge₂Sb₂Te₅ films. These features are discussed from thermo-dynamical and microscopic structural points-of-view.     

Structural change of laser-irradiated Ge2Sb2Te5 films studied by electrical property measurement

Sheet resistance of laser-irradiated Ge₂Sb₂Te₅ thin films prepared by magnetron sputtering was measured by the four-point probe method. With increasing laser power the sheet resistance undergoes an abrupt drop from 10⁷ to 10³ Ω/□ at about 580 mW. The abrupt drop in resistance is due to the structural change from amorphous to crystalline state as revealed by X-ray diffraction (XRD) study of the samples around the abrupt change point. Crystallized dots were also formed in the amorphous Ge₂Sb₂Te₅ films by focused short pulse laser-irradiated, the resistivities at the crystallized dots and the non-crystallized area are 3.375 × 10^?3 and 2.725 Ω m, sheet resistance is 3.37 × 10⁴ and 2.725 × 10⁷ Ω/□ respectively, deduced from the I–V curves that is obtained by conductive atomic force microscope (C-AFM).     

Evaluation of basic physical parameters of quaternary Ge–Sb-(S,Te) chalcogenide glasses

New quaternary chalcogenide Ge_xSb_40?xS₅₀Te₁₀ (x = 10, 20 and 27 at.%) and Ge_xSb_40?xS₅₅Te₅ (x = 20 and 27 at.%) glasses have been synthesized and the compositions have been characterized applying prompt gamma-ray activation analyses, neutron diffraction, and material density measurements. Using the experimental data, the basic physical parameters, such as average atomic volume, packing density, compactness, average coordination number, number of constrains, average heat of atomization and cohesive energy, of the synthesized glasses are evaluated and the results are discussed in a function of glass composition.     

The electrical switching and thermal behavior of bulk Ge15Te85 − xSnx and Ge17Te83 − xSnx glasses

Bulk Ge₁₅Te_85 ? xSn_x and Ge₁₇Te_83 ? xSn_x glasses, are found to exhibit memory type electrical switching. The switching voltages (V_t) and thermal stability of Ge₁₅Te_85 ? xSn_x and Ge₁₇Te_83 ? xSn_x glasses are found to decrease with Sn content. The composition dependence of V_t has been understood on the basis of the decrease in the OFF state resistance and thermal stability of these glasses with tin addition. X-ray diffraction studies reveal that no elemental Sn or Sn compounds with Te or Ge are present in thermally crystallized Ge–Te–Sn samples. This indicates that Sn atoms do not interact with the host matrix and form a phase separated network of its own, which remains in the parent glass matrix as an inclusion. Consequently, there is no enhancement of network connectivity and rigidity. The thickness dependence of switching voltages of Ge₁₅Te_85 ? xSn_x and Ge₁₇Te_83 ? xSn_x glasses is found to be linear, in agreement with the memory switching behavior shown by these glasses.     

Structural study of GexSb40−xS60 (x = 10, 20 and 30) glasses

The atomic structures of Ge–Sb–S ternary glasses have been investigated by using the neutron diffraction method. The structure factor, S(q), for Ge_xSb_40−xS₆₀ (x = 10, 20 and 30) has a first sharp diffraction peak (FSDP) at around 1.1 Å⁻¹. The oscillation in S(q) persisted up over 25 Å⁻¹ indicates that the chemical short-range order is presented in these glasses. The aspect of S(q) for Ge₁₀Sb₃₀S₆₀ is different from those for Ge₂₀Sb₂₀S₆₀ and Ge₃₀Sb₁₀S₆₀. These results show that the atomic structure changes drastically between Ge₁₀Sb₃₀S₆₀ and Ge₂₀Sb₂₀S₆₀. The short-range order of tetrahedral GeS₄ and pyramidal SbS₃ units seems to exist in the Ge_xSb_40−xS₆₀ (x = 10, 20 and 30) glasses.     

Structure, electrical, optical and thermal properties of Ge4Sb4Tex (x = 8, 9 and 10) thin films

The crystalline samples of Ge₄Sb₄Te₁₀, Ge₄Sb₄Te₉, and Ge₄Sb₄Te₈ were prepared and their amorphous semiconducting thin films obtained by flash evaporation. Their sheet resistance decreased slowly with temperature up to 147–160 °C with activation energy of electrical conductivity ΔE = 0.40–0.44 eV. Above these temperatures, the sheet resistance drops abruptly by several orders due to crystallization. The drop of resistivity proceeds in two steps. Two steps of phase change were also found on curves of DSC and on the temperature dependence of index of refraction. It pays for slow heating rates, crystallization induced by short (≈30 ns) laser pulses proceeds probably in one step only for all studied samples (as it follows from X-ray diffraction), not only for Ge₂Sb₂Te₅ in which a single phase formation was confirmed. The crystallization temperatures are increasing slightly with decreasing Te content in the series Ge₄Sb₄Te₁₀–Ge₄Sb₄Te₉–Ge₄Sb₄Te₈ from 147 to 160 °C. The X-ray diffractograms revealed that in laser crystallized samples can be found only cubic modification of Ge₂Sb₂Te₅ type (a = 0.6 nm), while the samples annealed (230 °C, 2 h) or annealed after the crystallization with laser pulse, contain also small amounts of hexagonal phase.     

Static and dynamic structures of liquid GeTe mixtures

Neutron diffraction measurements of the liquid Ge–Te system and quasi- and inelastic neutron scattering experiments of the eutectic liquid Ge₁₅Te₈₅ were performed in the temperature range from 400 to 560 °C. The large temperature dependence of the static structure for liquid Ge₁₅Te₈₅ is reconfirmed; however it is found that the compositional dependence obtained at around 80 °C above the liquidus curve is rather small. The dynamic structure factors of liquid Ge₁₅Te₈₅ in the Q-region from 0.2 to 2.6 Å⁻¹ show a normal temperature dependence. From the vibrational density of states, it is found that the Te–Te covalent bond persists in liquid Ge₁₅Te₈₅; however a bending mode was not assigned clearly.     

Effects of Ge addition on the optical and electrical properties of eutectic Sb70Te30 films

The aim of this work is to study the influence of Ge addition on the optical and electrical properties in eutectic SbTe thin films (with the compositions: Sb₇₀Te₃₀, Ge₂Sb₇₀Te₂₈, Ge₅Sb₇₀Te₂₅ and Ge₁₀Sb₆₅Te₂₅) using visible optical reflectance, ellipsometry measurements, near infrared transmittance spectra, and four probe electrical resistivity measurements. From near infrared transmittance measurements the optical band gap was determined using Tauc’s expression for amorphous materials, a value of about 0.47 eV was obtained without any clear dependence on the Ge content. All amorphous films have approximately the same reflectance value, however the contrast ratio between the crystalline and amorphous phases decrease with increase of Ge. Using in situ four probe measurements versus temperature the dependence of the activation energy of conductance and the onset of the crystallization temperature have been determined for different materials. Four probe measurements have shown that the resistivity of amorphous films increases with increase of Ge. The results obtained have shown that optical and electrical properties of SbTe films with near eutectic composition change with the Ge content and depending on the application, in either optical or electrical memory devices, the most suitable composition needs to be determined.     

Experimental characterization of amorphous As–Se–Sb alloys

Thin films were thermally evaporated from ingot pieces of the As₃₀Se_70−xSb_x (with 2.5 ⩽ x ⩽ 17.5 at.%) glasses under vacuum of ∼10⁻⁵ Torr. Increasing Sb content was found to affect the thermal and optical properties of these films. Non-direct electronic transition was found to be responsible for the photon absorption inside the investigated films. The chemical bond approach has been applied successfully to interpret the decrease of the glass optical gap with increasing Sb content. Decreasing the thermal stability of the As₃₀Se_70−xSb_x specimen by increasing Sb content is responsible for occurring the amorphous–crystalline process at lower temperatures. Binary As₂Se₃ and Sb₂Se₃ phases are the main components of the stoichiometric As₃₀Se₆₀Sb₁₀ composition.     

Temperature-dependent structural changes in liquid Ge15Te85

The structure of liquid Ge₁₅Te₈₅ has been studied with neutron diffraction in the liquid state up to 740 °C and in the supercooled liquid state down to 345 °C. The temperature dependences of the diffraction patterns are analyzed. It is shown that the liquid Ge₁₅Te₈₅ can be described by the model of heterogeneous structure, which assumes that the melt consists of atoms joined in clusters and a proportion of atoms with higher mobility that fill the space in between clusters. The number and the size of clusters decrease while the volume fraction of ‘free’ atoms increases under heating.     

Structure and properties of Sb2O3-containing zinc borophosphate glasses

ZnO–B₂O₃–P₂O₅ glasses formulated with Sb₂O₃ were investigated in the series 50ZnO–10B₂O₃–40P₂O₅ + xSb₂O₃ (x = 0–70 mol%). With increasing Sb₂O₃ content, the values of glass transition temperature decrease from 492 °C down to 394 °C. The dissolution rate of the glasses reveals a maximum for the glass with x = 15 mol% Sb₂O₃. Raman spectra with increasing Sb₂O₃ content reflect the depolymerisation of phosphate chains. Antimony at low Sb₂O₃ content forms individual SbO₃ pyramids manifested in the Raman spectra by a broad vibrational band at ∼520–690 cm⁻¹. In the glasses with a higher Sb₂O₃ content SbO₃ units link into chains and clusters with Sb–O–Sb bridges manifested in the Raman spectra by a strong broad band at 380–520 cm⁻¹. The ³¹P MAS NMR spectra with increasing Sb₂O₃ content reflect the depolymerisation of phosphate chains at low Sb₂O₃ content and only small changes in the PO₄ coordination at a high Sb₂O₃ content. ¹¹B MAS NMR spectra reveal a steady transformation of B(OP)₄ units into B(OP)_4−x(OSb)_x units, accompanied by the transformation of BO₄ into BO₃ units with increasing Sb₂O₃ content.     

The composition dependence of electrical switching behavior of Ge7Se93−xSbx glasses

Bulk Ge₇Se_93?xSb_x (21 ? x ? 32) glasses are prepared by melt quenching method and electrical switching studies have been undertaken on these samples to elucidate the type of switching and the composition and thickness dependence of switching voltages. On the basis of the compressibility and atomic radii, it has been previously observed that Se-based glasses exhibit memory switching behavior. However, the present results indicate that Ge₇Se_93?xSb_x glasses exhibit threshold type electrical switching with high switching voltages. Further, these samples are found to show fluctuations in the current–voltage (I–V) characteristics. The observed threshold behavior of Ge₇Se_93?xSb_x glasses has been understood on the basis of larger atomic radii and lesser compressibilities of Sb and Ge. Further, the high switching voltages and fluctuations in the I–V characteristics of Ge–Se–Sb samples can be attributed to the high resistance of the samples and the difference in thermal conductivities of different structural units constituting the local structure of these glasses. The switching voltages of Ge₇Se_93?xSb_x glasses have been found to decrease with the increase in the Sb concentration. The observed composition dependence of switching voltages has been understood on the basis of higher metallicity of the Sb additive and also in the light of the Chemically Ordered Network (CON) model. Further, the thickness dependence of switching voltages has been studied to reassert the mechanism of switching.     

A composition dependent thermal behavior of GexSe35−xTe65 glasses

Alternating differential scanning calorimetric (ADSC) studies have been performed to understand the thermal behavior of bulk Ge_xSe_35?xTe₆₅ glasses (17 ? x ? 25); it is found that the glasses with x ? 20 exhibit two crystallization exotherms (T_c1 & T_c2). On the other hand, those with x ? 20.5, show a single crystallization reaction upon heating. The exothermic reaction at T_c1 has been found to correspond to the partial crystallization of the glass into hexagonal Te and the reaction at T_c2 is associated with the additional crystallization of rhombohedral GeTe phase. The glass transition temperature of Ge_xSe_35?xTe₆₅ glasses is found to show a linear but not-steep increase, indicating a progressive, but a gradual increase in network connectivity with Ge addition. It is also found that T_c1 of Ge_xSe_35?xTe₆₅ glasses with x ? 20, increases progressively with Ge content and eventually merges with T_c2 at x ≈ 20.5 (〈r〉 = 2.41); this behavior has been understood on the basis of the reduction in TeTe bonds of lower energy and increase in GeTe bonds of higher energy, with increasing Ge content. Apart from the interesting composition dependent crystallization, an anomalous melting behavior is also exhibited by the Ge_xSe_35?xTe₆₅ glasses.     

Glassy state and structure of Sn–Sb–Se chalcogenide alloy

The effect of Sn addition on the glass transition and structure of c-Sb₂₀Se₈₀ chalcogenide alloy have been studied by X-ray diffraction and differential scanning calorimetric studies. The increase in the glass forming region and the glass transition temperature with the addition of Sn is discussed by considering the formation of [SnSe₄] tetrahedra, another type of network former, which inhibits the crystallization. The differential scanning calorimetric studies on Sn_xSb₂₀Se_80−x (8 ⩽ x ⩽ 18) glassy samples reveal a single glass transition temperature for all values of x while a single crystallization peak was obtained only for 10 ⩽ x < 12. The X-ray diffraction studies reveal that the glass crystallizes to Sb₂Se₃ and SnSe₂ phases upon annealing. The glass formation and composition dependence of glass transition temperature in the Sn–Sb–Se chalcogenide alloy could be understood by considering the topological phase transitions and a chemically ordered network model.     

Effect of tellurium deposition rate on the properties of Cu–In–Te based thin films and solar cells

To investigate the effects of tellurium (Te) deposition rate on the properties of Cu–In–Te based thin films (Cu/In=0.30–0.31), the films were grown on both bare and Mo-coated soda-lime glass substrates at 200 °C by co-evaporation using a molecular beam epitaxy system. The microstructural properties were examined by means of scanning electron microscopy and X-ray diffraction. The crystalline quality of the films was improved with increase in the deposition rate of Te, and exhibited a single CuIn₃Te₅ phase with a highly preferred (1 1 2) orientation. Te-deficient film (Te/(Cu+In)=1.07) grown with a low Te deposition rate showed a narrow bandgap of 0.99 eV at room temperature. The solar cell performance was affected by the deposition rate of Te. The best solar cell fabricated using CuIn₃Te₅ thin films grown with the highest deposition rate of Te (2.6 nm/s) yielded a total area (0.50 cm²) efficiency of 4.4% (V_oc=309 mV, J_sc=28.0 mA/cm², and FF=0.509) without light soaking.     

Microwave preparation,structure and electrical properties of calcium–sodium–phosphate biosystem

The hydroxyapatite biomaterial (Ca₁₀(PO₄)₆(OH)₂ – HAP) is the main mineral constituent of teeth and bones, with excellent biocompatibility with hard and muscle tissues. These materials exhibit several problems of handling and fabrication, which can be overcome by mixing them with a suitable binder. In this study, a microwave process was used to produce hydroxyapatite using the starting materials CaCl₂ and Na₂HPO₄ with previous precipitation. The mixture was exposed to microwave radiation for 5, 10, 15 and 20 min through domestic microwave ovens with an output power of 1 kW and frequency oscillation of 2.45 GHz. The samples were analyzed by X-ray powder diffraction, scanning electron microscopy, energy dispersive X-ray, dc conductivity and impedance spectroscopy. X-ray powder diffraction revealed the formation of HAP after 5 min of exposure. The presence of a low crystallinity state and the transition, with the rise of radiation exposure time, to a crystalline phase was related to the Ca/P mass and Ca/P atomic ratio. The presence of this low crystalline phase, detected by X-ray powder diffraction and scanning electron microscopy, seems to have a direct influence on electrical and dielectrical characteristics.     

Reduced operating voltage in nanotube‐shaped Ge2Sb2Te5 unites by nanosphere lithography

Ge₂Sb₂Te₅ Units for Phase Change Memory are fabricated on 2‐dimesional polystyrene (PS) template in a magnetron sputtering system. SEM and TEM observations show the Ge₂Sb₂Te₅ nanotubes form on the 200 nm PS beads which are etched for 30 s. And the lengths of the nanotubes are tuned by the film deposition. HRTEM and the electron diffraction measurements confirm the phase transition between the amorphous and the crystallized state. Resistance–voltage measurements show the operating voltage of the Ge₂Sb₂Te₅ nanotube‐shaped unit is reduced due to the small contact area with the bottom electrode, which indicates its potential applications for phase change memory.     

Te-rich Ge–As–Se–Te bulk glasses and films for future IR-integrated optics

Ge₁₅As₁₅Se_70−xTe_x materials with x = 56, 60 and 63, of potential use in IR-integrated optics, were prepared by the classical melt-quenching method. A macroscopic phase separation was observed with a crystalline phase on the top and an amorphous one at the bottom. The glasses from the bottom were transparent from 1.9 to 16 μm without any purification of the elemental precursors Ge, As, Te and Se. The higher the Te/Se content in the glasses the lower their glass transition temperature and thermal stability. Films 7–12 μm thick of the above stated compositions were deposited by thermal evaporation. The higher the tellurium content, the larger the optical band gap shift of the films in the infra-red and the higher the refractive index.     

Structure of SbxGe40-xSe60 glasses around 2.67 average coordination number

The evolution of the structure of Sb_xGe_40-xSe₆₀ (x = 8, 12, 15, 18 and 20) chalcogenide glasses is determined by high resolution X-ray photoelectron spectroscopy as Sb is added and the average coordination number (Z) is varied from 2.60 to 2.72. For glasses with Z < 2.67 the structure consists of deformed tetrahedra and pyramids, in which at least one Se atom is substituted by Ge or Sb atoms. Increase in the concentration of cations beyond Z ≥ 2.67 leads to a strengthening of the above regularity and formation of the structure by shared pyramids and tetrahedra with two or more Se atoms substituted by cations. At the same time Se–Se dimers are present in all the investigated compositions while they are not expected in these Se-deficient glasses. Their formation dictates that there must be metal-rich regions somewhere in the structure.