基片温度和退火对DdIn2O4薄膜光学性质和载流子浓度的影响

对射频反应性溅射Cd-In合金靶制备的透明导电CdIn2O4薄膜，研究了基片温度及沉积后在氩气流中退火对薄膜的透射、反射和吸收光谱，光学常数和载流子浓度的影响。结果表明：提高基片温度减少了薄膜的载流子浓度，退火增加了薄膜的载流子浓度。随着基片温度提高，薄膜折射率n和消光系数κ的短波峰将逐渐蓝移，而退火使其出现红移。基片温度和退火对薄膜光学常数的影响与其对薄膜载流子浓度的影响是一致的。在制备CdIn2O4这样一种对于沉积方法和沉积条件极为敏感的透明导电薄膜的沉积过程中，这一现象对于实时监控具有极为重要的意义。     

基片温度和退火对CdIn2O4薄膜光学性质和载流子浓度的影响

对射频反应性溅射Cd In合金靶制备的透明导电CdIn2 O4薄膜 ,研究了基片温度及沉积后在氩气流中退火对薄膜的透射、反射和吸收光谱 ,光学常数和载流子浓度的影响。结果表明 :提高基片温度减少了薄膜的载流子浓度 ,退火增加了薄膜的载流子浓度。随着基片温度提高 ,薄膜折射率n和消光系数κ的短波峰将逐渐蓝移 ,而退火使其出现红移。基片温度和退火对薄膜光学常数的影响与其对薄膜载流子浓度的影响是一致的。在制备CdIn2 O4这样一种对于沉积方法和沉积条件极为敏感的透明导电薄膜的沉积过程中 ,这一现象对于实时监控具有极为重要的意义。     

退火温度对VOX薄膜结构及光学性质的影响

以高纯五氧化二钒(V2O5)粉末(纯度≥99.99%, 质量百分比)为原料, 采用真空蒸发--还原工艺, 在不同退火温度下还原出不同组分的VOX薄膜。利用X射线衍射仪, X射线光电子能谱仪和紫外-可见分光光度计对薄膜进行测试和分析, 得到了不同退火温度与薄膜结构和其光学特性的关系。结果显示: V2O5中的V5+随着退火温度的上升被还原, 退火温度为450℃时, V4+含量最高, 结晶最好, 500℃时, 薄膜组分表现出逆退火现象, 温度进一步升高, 钒再次被还原。     

退火温度对a-Se0.70Ge0.15Sb0.15薄膜的结构和光学性质的影响

研究了退火温度对Se0.70Ge0.15Sb0.15薄膜的影响.通过热蒸发技术,在300K温度下将大块无定形Se0.70Ge0.15Sb0.1s沉积在石英和玻璃衬底上.研究发现,未经过退火处理的薄膜结构和在300K,1.33×10-5Pa下退火1小时后的薄膜结构都是无定形结构,而在同样气压470K温度下退火1小时的薄膜有结晶现象.通过在300 2 500nm范围内垂直入射光方向上透射率和反射率的测试,研究了薄膜的一些光学参数,如消光系数(k),折射系数(n)和吸收系数(a).研究发现,n和k同热处理温度有关.通过光学数据的分析,得到了不同条件下薄膜的间接带隙宽度(Enong),未经过热处理薄膜的Enong是1.715±0.021eV,300K下退火薄膜的Enong是1.643±0.021eV,470K下退火的Enong是1.527±0.021eV.退火温度降低了带隙宽度Enong,但增加了带尾eo这种效应可以根据Mott和Davis提出的多晶体系中态密度来解释.     

快速退火对PLD法制备SnS薄膜结构和光学性质的影响

利用脉冲激光沉积(PLD)法在玻璃基片上室温生长SnS薄膜,并在Ar气保护下分别在200,300,400,500,600℃对薄膜进行快速退火处理。利用X射线衍射(XRD)、拉曼光谱仪(Raman)、原子力显微镜(AFM)、场发射扫描电子显微镜( FE-SEM)、紫外-可见-近红外分光光度计( UV-Vis-NIR)、Keithley 4200-SCS半导体参数分析仪研究了快速退火温度对SnS薄膜的晶体结构、表面形貌以及有关光学性质和电学性能的影响。所制备的SnS薄膜样品沿(111)晶面择优取向生长,退火温度为400℃时的薄膜结晶质量最好。薄膜均具有SnS特征拉曼峰。随着退火温度的升高,薄膜厚度逐渐减小,而平均颗粒尺寸逐渐增大。不同退火温度下的SnS薄膜在可见光范围内的吸收系数均为105 cm-1量级,400℃时退火薄膜的直接带隙为1.92 eV。随着退火温度从300℃升高到500℃,电阻率由1.85×104Ω·cm下降到14.97Ω·cm。     

射频磁控反应溅射制备的Ag2O薄膜的椭圆偏振光谱研究

Ag₂O薄膜在新型超高存储密度光盘和磁光盘方面具有潜在的应用前景.利用射频磁控反应溅射技术, 通过调节衬底温度在沉积气压为0.2 Pa、氧氩比为2:3的条件下制备了一系列Ag₂O 薄膜.利用通用振子模型(包括1个Tauc-Lorentz振子和2个Lorentz 振子)拟合了薄膜的椭圆偏振光谱.在1.5-3.5 eV能量区间,薄膜的折射率在2.2-2.7之间, 消光系数在0.3-0.9之间. 在3.5-4.5 eV能量区间,薄膜呈现了明显的反常色散,揭示Ag₂O薄膜的等离子体振荡频率在 3.5-4.5 eV之间. 随着衬底温度的升高,薄膜的光学吸收边总体上发生了红移, 该红移归结于薄膜晶格微观应变随衬底温度的升高而增大. Ag₂O薄膜的光学常数表现出典型的介质材料特性.     

退火处理对SnO2薄膜光致发光性质的影响

实验研究表明,SnO2薄膜经过退火处理后其光致发光谱有明显的变化。在氧和氮两种不同气氛中进行热处理,其变化也有差异。这种变化主要是由于SnO2膜中氧空位和自由载流于浓度变化所致。     

退火温度对硼掺杂纳米金刚石薄膜微结构和p型导电性能的影响

采用热丝化学气相沉积法制备硼掺杂纳米金刚石 (BDND) 薄膜, 并对薄膜进行真空退火处理, 系统研究退火温度对BDND薄膜微结构和电学性能的影响. Hall效应测试结果表明掺B浓度为5000 ppm (NHB) 的样品的电阻率较掺B浓度为500 ppm (NLB) 的样品的低, 载流子浓度高, Hall迁移率下降. 1000 ℃退火后, NLB和NHB 样品的迁移率分别为53.3和39.3 cm²·V^-1·s^-1, 薄膜的迁移率较未退火样品提高, 电阻率降低. 高分辨透射电镜、紫外和可见光拉曼光谱测试结果表明, NLB样品的金刚石相含量较NHB样品高, 高的硼掺杂浓度使薄膜中的金刚石晶粒产生较大的晶格畸变. 经1000 ℃退火后, NLB和NHB薄膜中纳米金刚石相含量较未退火时增大, 说明薄膜中部分非晶碳转变为金刚石相, 为晶界上B扩散到纳米金刚石晶粒中提供了机会, 使得纳米金刚石晶粒中B浓度提高, 增强纳米金刚石晶粒的导电能力, 提高薄膜电学性能. 1000 ℃退火能够恢复纳米金刚石晶粒的晶格完整性, 减小由掺杂引起的内应力, 从而提高薄膜的电学性能. 可见光Raman光谱测试结果表明, 1000℃退火后, Raman谱图中反式聚乙炔 (TPA) 的1140 cm^-1峰消失, 此时薄膜电学性能较好, 说明TPA减少有利于提高薄膜的电学性能. 退火后金刚石相含量的增大、金刚石晶粒的完整性提高及TPA含量的大量减少有利于提高薄膜的电学性能. 关键词： 硼掺杂纳米金刚石薄膜 退火 微结构 电学性能     

氮化蓝宝石衬底上GaN薄膜的微结构与光学性质

用透射电子显微镜(TEM),X射线衍射(XRD)和光荧光谱(PL)等测量手段研究了GaN薄膜的微结构和光学性质。样品是用光辐射加热MOCVD在蓝宝石衬底上制备的。随着衬底氮化时间的增加,扩展缺陷的密度显著增加。在位错密度增加一个数量级时,XRD摇摆曲线半宽度(FWHM)由11″增加到15″,PL谱的黄光发射从几乎可忽略增加到带边发射强度的100倍。结合生长条件,我们对黄光与微结构的关系作了讨论。     

衬底温度对HfO2薄膜结构和光学性能的影响

采用直流磁控反应溅射法,分别在室温,200,300,400和500 ℃下制备了HfO2薄膜。利用X射线衍射（XRD）、椭圆偏振光谱（SE）和紫外可见光谱（UV-vis）研究了衬底温度对HfO2薄膜的晶体结构和光学性能的影响。XRD研究结果显示：不同衬底温度下制备的HfO2薄膜均为单斜多晶结构;随衬底温度的升高,（-111）面择优生长更加明显,薄膜中晶粒尺寸增大。SE和UV-vis研究结果表明：随衬底温度升高,薄膜折射率增加,光学带隙变小;制备的HfO2薄膜在250～850 nm范围内有良好的透过性能,透过率在80%以上。     

Effect of substrate temperature on microstructure and optical properties of single-phased Ag2O film deposited by using radio-frequency reactive magnetron sputtering method

Using a radio-frequency reactive magnetron sputtering technique,a series of the single-phased Ag2O films are deposited in a mixture of oxygen and argon gas with a flow ratio of 2:3 by changing substrate temperature(T s).Effects of the T s on the microstructure and optical properties of the films are investigated by using X-ray diffractometry,scanning electron microscopy and spectrophotometry.The single-phased Ag2O films deposited at values of T s below 200℃ are(111) preferentially oriented,which may be due to the smallest free energy of the(111) crystalline face.The film crystallization becomes poor as the value of T s increases from 100℃ to 225℃.In particular,the Ag2O film deposited at T s = 225℃ loses the 111 preferential orientation.Correspondingly,the film surface morphology obviously evolves from a uniform and compact surface structure to a loose and gullied surface structure.With the increase of T s value,the transmissivity and the reflectivity of the films in the transparent region are gradually reduced,while the absorptivity gradually increases,which may be attributed to an evolution of the crystalline structure and the surface morphology of the films.     

Effect of substrate temperature on microstructure and optical properties of single-phased Ag20 film deposited by using radio-frequency reactive magnetron sputtering method

Using a radio-frequency reactive magnetron sputtering technique, a series of the single-phased Ag20 films are deposited in a mixture of oxygen and argon gas with a flow ratio of 2：3 by changing substrate temperature （Ts）. Effects of the Ts on the microstructure and optical properties of the films are investigated by using X-ray diffractometry, scanning electron microscopy and spectrophotometry. The single-phased Ag20 films deposited at values of Ts below 200℃ are （111） preferentially oriented, which may be due to the smallest free energy of the （111） crystalline face. The film crystallization becomes poor as the value of Ts increases from 100℃ to 225℃. In particular, the Ag20 film deposited at Ts=225℃ loses the （111） preferential orientation. Correspondingly, the film surface morphology obviously evolves from a uniform and compact surface structure to a loose and gullied surface structure. With the increase of Ts value, the transmissivity and the reflectivity of the films in the transparent region are gradually reduced, while the absorptivity gradually increases, which may be attributed to an evolution of the crystalline structure and the surface morphology of the films.     

Spectroscopic ellipsometric study of the optical properties of Ag2O film prepared by direct-current magnetron reactive sputtering

The Ag2O film, as-deposited by direct-current magnetron reactive sputtering at a substrate temperature of 150℃, clearly shows a preferential orientation (111), and is capable of lowering the threshold value of the thermal decomposition temperature to about 200℃, which is helpful to its application in optical and magneto-optical storage. This paper fits its optical constants in terms of a general oscillator model by using measured ellipsometric parameters. The fitted oscillator energy 2.487 eV is close to the optical direct interband transition energy value of the Ag2O film determined by Tauc equation; whereas, the fitted oscillator energy 4.249 eV is far from the fitted plasma oscillator energy 4.756 eV by single-oscillator energy. The photoluminescence spectrum centred at about 2.31 eV indicates a direct-energy gap photoluminescence mechanism of the Ag2O film.     

The influence of nickel dopant on the microstructure and optical properties of SnO2 nano-powders

The microstructure and optical properties of Ni-doped SnO2 nano-powders are studied in detail. By Ni-doping, not only the grain size reduces, but also the grain shape changes from nano-rods to spherical particles. The crystallization becomes better with annealing temperature increasing. The band gap energy decreases as nickel doping level increases. The sp-d hybridization and alloying effect due to amorphous SnO2-x phase should be responsible for the band gap narrowing effect. Nickel dopant does not change the photoluminescence （PL） peak positions.     

Effects of the sputtering power on the crystalline structure and optical properties of the silver oxide films deposited using direct-current reactive magnetron sputtering

This paper reports that a series of silver oxide (Ag_xO) films are deposited on glass substrates by direct-current reactive magnetron sputtering at a substrate temperature of 250 oC and an oxygen flux ratio of 15:18 by modifying the sputtering power (SP). The Ag_xO films deposited apparently show a structural evolution from cubic biphased (AgO + Ag₂O) to cubic single-phased (Ag₂O), and to biphased (Ag₂O + AgO) structure. Notably, the cubic single-phased Ag₂O film is deposited at the SP = 105 W and an AgO phase with <220> orientation discerned in the Ag_xO films deposited using the SP > 105 W. The transmissivity and reflectivity of the Ag_xO films in transparent region decrease with the increase the SP, whereas the absorptivity inversely increases with the increase of the SP. These results may be due to the structural evolution and the increasing film thickness. A redshift of the films' absorption edges determined in terms of Tauc formula clearly occurs from 3.1 eV to 2.73 eV with the increase of the SP.     

溅射制备Ta2O5薄膜的表面形貌与光学特性

在室温条件下利用溅射Ta₂O₅靶材的方法制备了Ta₂O₅薄膜,并采用将薄膜两侧的反射率光谱进行比较的简便方法分析评估薄膜的光吸收,发现溅射制备薄膜的额外光吸收源是溅射引起的缺氧形成的,选择适当的溅射功率和含氧比例的工作气体能有效地消除这些缺陷、不用任何加温处理就可制备得到表面平坦和高致密度的高品质Ta₂O₅薄膜. 关键词： 2O₅薄膜')" href="#">Ta₂O₅薄膜 光吸收 表面形貌 磁控溅射     

Thermal-induced gradually changes in the optical properties of amorphous GeSe2 film prepared by PLD

Amorphous GeSe₂ film was prepared by the pulsed laser deposition technique and annealed at different temperature from 473 to 623 K. Using the ‘non-direct transition’ model proposed by Tauc, the short wavelength absorption edges of the films were well fitted and the optical band gaps () were determined. The Tauc slope of the as-deposited film is smaller than those of annealed films, which were proposed as an indicator of the degree of structural randomness of amorphous semiconductors. The refractive index and thickness of the films were calculated from the optical transmission spectra using the Swanepoel method. The index of refraction decreased while increased gradually with increasing the annealing temperature. The thermal-bleaching and thermal-contraction effects were observed, which were interpreted as the reduction in the density of homopolar bonds according to the Raman spectra analysis and the diminution of porous structure in the fragments of the annealed films, respectively.     

紫外Sc_2O_3薄膜的光学和结构性能表征及其激光作用下的损伤机理

利用电子束蒸发方法,在不同沉积温度(50~350℃)下制备了Sc2O3薄膜。分别用分光光度计,小角掠入射X射线衍射仪和轮廓仪测试了薄膜样品的光谱、微结构和表面粗糙度信息,并用薄膜分析软件Essential Macleod计算了Sc2O3薄膜的折射率和消光系数。结果表明:随着沉积温度升高,Sc2O3薄膜结晶程度增强,晶粒尺寸增大,且较高的沉积温度有利于获得较高的折射率。最后用355 nm,8 ns的三倍频Nd:YAG激光器测试了其激光损伤阈值(LIDT),最大值为2.6 J/cm2,且阈值与薄膜的消光系数、表面粗糙度、光学损耗均呈现相反的变化趋势。用光学显微镜和扫描电子显微镜表征了该薄膜的破坏形貌,详细分析了薄膜在不同激光能量作用下破坏的发展过程,以及Sc2O3薄膜在355 nm紫外激光作用下LIDT与制备工艺的关系,重点分析了355 nm激光作用下薄膜的破坏机理。     

TiO2薄膜光学性质的研究

以磁控溅射制备的TiO2薄膜为样品,通过对薄膜折射率、吸收系数、膜厚度与入射光波长相互关系的分析。获得了TiO2薄膜的折射率、吸收系数与入射光波长的关系式。以及TiO2薄膜厚度的计算公式．