弱光下锑基太阳电池的光谱响应与性能优化

锑基薄膜太阳电池因其制备方法简单,原材料丰富,光电性能稳定等优点而得到了快速发展。其中锑基吸光层材料(硫化锑、硫硒化锑、硒化锑)具有高吸收系数特点,因而在室内或者水下等弱光条件下具有相当大的应用潜力。通过构造两种衰减光谱以研究新型锑基薄膜太阳电池在弱光下的光电响应。首先通过厚度调节硒化锑太阳电池的吸光能力,发现当吸光层厚度较薄时,电池的光电转换效率存在较大差值;而当吸光层厚度过厚时,电池性能又因载流子复合的增大而降低。在吸光层厚度处于合适的0.4～1.2μm之间时,硒化锑太阳电池在长波衰减光谱和短波衰减光谱下都能获得高于16%的转换效率。然后通过硒含量调节锑基太阳电池的光谱吸收范围,发现长波衰减光谱下,锑基太阳电池的器件性能显著高于标准光谱,并且在20%～40%硒含量下能够获得最佳的转换效率。而在短波衰减光谱下,锑基太阳电池的最佳性能出现在硒含量为60%的情况下。因而在弱光条件下,锑基太阳电池的最佳硒含量需要通过具体的光谱特性确定。最后研究了两种衰减光谱下,硫化锑/硒化锑双结叠层太阳电池的光谱响应特性。发现在短波衰减光谱下,叠层太阳电池效率会随着总厚度的增加而增加。而在长波衰减光谱下,...     

多晶硅太阳电池激光掺杂选择性发射极

研究了多晶硅片扩散工艺与激光掺杂工艺的匹配性.采用波长532nm的纳秒脉冲激光器对扩散后未去磷硅玻璃的多晶硅片表面进行激光扫描掺杂,激光扫描掺杂后硅片方块电阻降低为扩散后硅片方阻的50%左右,而且随着激光功率的增加,扩散到硅片表面的磷原子浓度增大,硅片方阻下降更明显.测试了激光掺杂后多晶硅太阳能电池的外量子效率,其外量子效率在340~480nm波段范围与常规多晶硅太阳能电池相比提高18%~5%.研究了激光掺杂后多晶硅电池的光电转换特性,分析了较高激光功率掺杂时多晶硅电池的失效特性,结果表明:优化工艺后多晶硅太阳电池平均光电转换效率达到17.11%,比普通工艺多晶硅太阳电池提高0.34%,最高转换效率达到17.47%.激光掺杂选择性发射极工艺流程简单,电池效率提升明显,易于实现产业化.     

低温退火磷吸杂工艺对低少子寿命铸造多晶硅电性能的影响

本文针对低少子寿命铸造多晶硅片进行试验, 通过一种将多温度梯度磷扩散吸杂工艺与低温退火工艺结合的新型低温退火吸杂工艺, 去除低少子寿命多晶硅片中影响其电性能的Fe杂质及部分晶体缺陷, 提高低少子寿命多晶硅所生产的太阳电池各项电性能. 通过低温退火磷扩散吸杂工艺与其他磷扩散吸杂工艺的比较, 证明了低温退火吸杂工艺具有更好的磷吸杂和修复晶体缺陷的作用. IV-measurement发现经过低温退火工艺处理后的低少子寿命多晶硅, 制备的太阳电池光电转换效率比其他实验组高0.2%, 表明该工艺能有效地提高低少子寿命多晶硅太阳电池各项电性能参数及电池质量. 本研究结果表明新型低温退火磷吸杂工艺可将低少子寿命硅片应用于大规模太阳电池生产中, 提高铸造多晶硅材料在太阳能领域的利用率, 节约铸造多晶硅的生产成本. 关键词： 低温退火 磷吸杂 低少子寿命多晶硅 太阳电池     

多晶硅表面周期性微结构的激光制备与性能研究

为了减小多晶硅表面入射光的反射率,提高太阳能电池的光电效率,利用紫外纳秒激光器在多晶硅表面制备不同深度、不同间距的微凹坑点阵绒面,研究织构形貌对反射率及光电转换效率的影响。通过激光频率的改变实现微凹坑深度的变化,通过微凹坑排布方式的改变实现微凹坑间距的变化;使用光纤光谱仪测量多晶硅表面反射率并通过激光共聚焦显微镜观察微凹坑形貌;在PC1D软件中建立多晶硅入射光反射模型并模拟不同点阵间距下的多晶硅短路电流和开路电压,计算光电转换效率和填充因子。研究表明,不同频率(300 kHz、200 kHz、150 kHz、50 kHz)和点阵排布方式(300×300、310×310、350×350、400×400)对多晶硅表面的反射率和光电转换效率影响显著,随着频率增大,多晶硅试样反射率先减小后增加最后保持稳定;随着点阵排布密集程度增加,多晶硅试样光电转换效率逐渐提高。实验结果显示当激光频率为150 kHz,点阵分布为400×400时,多晶硅表面微凹坑成型较好,表面平均反射率为3.32%,多晶硅电池的效率为18.80%,相较于未制绒多晶硅电池提高25.9%。     

硅太阳电池表面多孔硅的制备与作用

利用电化学方法在硅太阳能电池的金字塔上面刻蚀一层多孔硅,研究多孔硅对硅表面反射率、光电转换量子效率的影响以及氧化对不同波长的光电转换量子效率的影响。研究发现氢氟酸浓度对反射率没有明显的影响,而电化学反应时间可以调制反射率最低波长点,最终获得综合反射率低至2%的优质减反效果。多孔硅的存在使得300～500 nm的光电转换量子效率降低,500 nm以上长波的光电转换量子效率增加。氧气氛围中的快速退火能够有效降低少数载流子的表面复合,从而增加短波段的光电转换量子效率。     

多晶硅表面织构化新工艺的研究

先后采用电化学腐蚀法和化学酸腐蚀法腐蚀多晶硅,用于制备高效率多晶硅太阳电池.首先将多晶硅片在HF和CH3 CH2 OH体积比为1:2的溶液中进行电化学预腐蚀,具体研究不同电流密度对多晶硅绒面形貌的影响;然后采用化学酸腐蚀法进行二次腐蚀,去除多晶硅表面的疏松结构,得到高性能的多晶硅绒面.使用扫描电镜观察多晶硅表面腐蚀形貌...     

多晶硅中的氧碳行为及其对太阳电池转换效率的影响

认识及控制多晶硅中杂质行为对于实现低成本、高效率多晶硅太阳电池有着重要的意义.利用红外光谱技术研究了定向凝固多晶硅锭中不同部位材料热处理前后的氧浓度、碳浓度变化,结合少子寿命、光电转换效率、内量子效率等电池性能,探索不同含量的氧、碳杂质对电池性能影响的物理机制.提出一种考虑碳影响的氧沉淀生长模型,并模拟了热处理后氧沉淀的尺寸分布和数量.研究发现,碳除了使利用硅锭顶部材料制备得到的电池转换效率降低外,还是决定氧沉淀作用的重要因素.由于碳含量多造成中部材料氧沉淀的尺寸大、数量多,引起缺陷,增加复合,而碳在底部 关键词： 氧 碳 太阳电池 转换效率     

钙钛矿/硅叠层太阳电池中平面a-Si:H/c-Si异质结底电池的钝化优化及性能提高

最近,旋涂法制备的钙钛矿/平面硅异质结高效叠层太阳电池引起人们广泛关注,主要原因是相比于绒面硅衬底制备的钙钛矿/硅叠层太阳电池,其制备工艺简单、制备成本低且效率高.对于平面a-Si:H/c-Si异质结电池, a-Si:H/c-Si界面的良好钝化是获得高转换效率的关键,进而决定了钙钛矿/硅异质结叠层太阳电池的性能.本文主要从硅片表面处理、a-Si:H钝化层和P型发射极等方面展开研究,通过对硅片表面的氢氟酸(HF)浸泡时间和氢等离子体预处理气体流量、a-Si:H钝化层沉积参数、钝化层与P型发射极(I/P)界面富氢等离子体处理的综合调控,获得了相应的优化工艺参数.对比研究了p-a-Si:H和p-nc-Si:H两种缓冲层材料对I/P界面的影响,其中高电导、宽带隙的p-nc-Si:H缓冲层既能够降低I/P界面的缺陷态,又可以增强P型发射层的暗电导率,提高了前表面场效应钝化效果.通过上述优化,制备出最佳的P-type emitter layer/aSi:H(i)/c-Si/a-Si:H(i)/N-type layer (inip)结构样品的少子寿命与implied-Voc分别达到2855μs和709 mV,表现出良好的钝化效果.应用于平面a-Si:H/c-Si异质结太阳电池,转换效率达到18.76%,其中开路电压达到681.5 mV,相对于未优化的电池提升了34.3 mV.将上述平面a-Si:H/c-Si异质结太阳电池作为底电池,对应的钙钛矿/硅异质结叠层太阳电池的开路电压达到1780 mV,转换效率达到21.24%,证明了上述工艺优化能够有效地改善叠层太阳电池中的硅异质结底电池的钝化及电池性能.     

步进扫描时间分辨光谱及其在太阳电池光电导上的应用

建立傅里叶变换步进扫描时间分辨光电导光谱，并研究太阳电池中与转换效率密切相关的少数载流子寿命.实验选取三种典型的硅太阳电池(单晶硅样品1、多晶硅样品2和多晶硅样品3 )，发现其瞬态光电导的上升和衰退曲线可以分别用两个简单的指数函数描述.由于有复合中心的参与，复合过程中少数载流子的寿命比产生过程中的寿命短.为验证实验结果的可靠性，采用了提取样品少数载流子的体寿命和计算其有效扩散长度两种方法.通过与太阳电池暗伏安特性和负载特性研究相结合，进一步分析和讨论了少数载流子寿命与短路电流、开路电压和转换效率的关系.同时探讨了步进扫描时间分辨光谱实验的其他用途. 关键词： 步进扫描 时间分辨 硅太阳电池 瞬态光电导     

表面钝化对多晶硅绒面形貌的影响

多晶硅表面制绒技术是太阳能光伏产业亟待突破的一个关键技术.本文根据多晶硅强酸制绒的基本原理,提出了表面活性剂钝化多晶硅表面以降低硅原子与酸反应速度从而改善多晶硅绒面形貌的方法.实验研究了不同含量的添加剂对酸液刻蚀多晶硅绒面形貌的影响,用扫描电镜观察对应的绒面结构,用积分反射仪测量其绒面的表面反射率.实验结果表明:加入活性剂后酸液能使多晶硅表面陷阱坑分布更加均匀,并且能有效消除产生漏电流的缺陷性深沟槽,样品表面反射率比较低,其表面反射率降低到21.5%.与传统酸液腐蚀的多晶硅绒面结构相比,陷阱坑密度明显增加,这种方法在多晶硅太阳电池的生产中是有价值的.     

Hydrogen passivation of multi—crystalline silicon solar cells

The effects of hydrogen passivation on multi-crystalline silicon (mc-Si) solar cells are reported in this paper. Hydrogen plasma was generated by means of ac glow discharge in a hydrogen atmosphere. Hydrogen passivation was carried out with three different groups of mc-Si solar cells after finishing contacts. The experimental results demonstrated that the photovoltaic performances of the solar cell samples have been improved after hydrogen plasma treatment, with a relative increase in conversion efficiency up to 10.6\%. A calculation modelling has been performed to interpret the experimental results using the model for analysis of microelectronic and photonic structures developed at Pennsylvania State University.     

Understanding the current-voltage characteristics of industrial crystalline silicon solar cells by considering inhomogeneous current distributions

Solar cells made from multi- or mono-crystalline silicon wafers are the base of today’s photovoltaics industry. These devices are essentially large-area semiconductor p-n junctions. Technically, solar cells have a relatively simple structure, and the theory of p-n junctions was established already decades ago. The generally accepted model for describing them is the so-called two-diode model. However, the current-voltage characteristics of industrial solar cells, particularly of that made from multi-crystalline silicon material, show significant deviations from established diode theory. These deviations regard the forward and the reverse dark characteristics as well as the relation between the illuminated characteristics to the dark ones. In the recent years it has been found that the characteristics of industrial solar cells can only be understood by taking into account local inhomogeneities of the dark current flow. Such inhomogeneities can be investigated by applying lock-in thermography techniques. Based on these and other investigations, meanwhile the basic properties of industrial silicon solar cells are well understood. This contribution reviews the most important experimental results leading to the present state of physical understanding of the dark and illuminated characteristics of multi-crystalline industrial solar cells. This analysis should be helpful for the continuing process of optimizing such cells for further increasing their energy conversion efficiency.     

Large-scale black multi-crystalline silicon solar cell with conversion efficiency over 18 %

In this paper, large area multi-crystalline silicon (mc-Si) solar cells of 156 mm × 156 mm were fabricated by the combination of Ag-assisted etching and sodium hydroxide (NaOH) treatment. Scanning electron microscope, UV–Vis–NIR spectrophotometer, external quantum efficiency measurement system, and current–voltage test were used to characterize the etched black silicon wafers and the fabricated solar cells. It was found that, though the black mc-Si without NaOH treatment showed a lowest reflectance of 2.03 % in the wavelength of 400–900 nm, the maximum conversion efficiency came from the mc-Si solar cells produced by combination of Ag-assisted etching and NaOH treatment. Though the solar cell with additional NaOH treatment for 30 s presented a reflectance of 5.45 %, it presented the highest conversion efficiency of 18.03 %, which is 0.64 % higher than the traditional mc-Si solar cell (17.39 %) and much higher than that of the black mc-Si solar cell without NaOH treatment (16.24 %).     

Micromorph tandem solar cells: optimization of the microcrystalline silicon bottom cell in a single chamber system

We report on the development of single chamber deposition of microcrystalline and micromorph tandem solar cells directly onto low-cost glass substrates. The cells have pin single-junction or pin/pin double-junction structures on glass substrates coated with a transparent conductive oxide layer such as SnO₂ or ZnO. By controlling boron and phosphorus contaminations, a single-junction microcrystalline silicon cell with a conversion efficiency of 7.47% is achieved with an i-layer thickness of 1.2 μm. In tandem devices, by thickness optimization of the microcrystalline silicon bottom solar cell, we obtained an initial conversion efficiency of 9.91% with an aluminum (Al) back reflector without a dielectric layer. In order to enhance the performance of the tandem solar cells, an improved light trapping structure with a ZnO/Al back reflector is used. As a result, a tandem solar cell with 11.04% of initial conversion efficiency has been obtained.     

Buried contact solar cell using tri-crystalline CZ silicon wafers

Tri-crystalline silicon wafers have been used for fabrication of buried contact solar cells. Optical properties and microstructures after texturing in KOH solution have been studied and compared with those of multi-crystalline silicon wafers. The textured surface of tri-crystalline wafer has a shape of V-groove with an angle of 109.48°. The efficiency of buried contact solar cell fabricated on tri-crystalline wafer measured to be 14.27% without optimization of cell process for tri-crystalline CZ wafer. Ray tracing computer simulations showed that V-groove composed of (1 1 1) after texturing can decrease reflectance significantly when cells are encapsulated. The reflectance can be reduced to about 4%, averaged over the 400–1100 nm wavelength range. The life time of tri-grain wafer was longer than that of multi-crystalline silicon wafer because it has only three twin boundaries in a wafer.     

Enhancement of silicon solar cell performances due to light trapping by colloidal metal nanoparticles

Photovoltaics is the most promising technology for the future of green energy production. To fully realize the potential use of photovoltaic technology, low manufacturing cost and high working photoconversion efficiency must be obtained. Light trapping by metal nanoparticles is an attractive strategy in thin film as well as in bulk silicon solar cells aimed to confine light within the active layer to promote the photon absorption and therefore achieving higher efficiency. In this paper, we tested the deposition of silver and gold nanoparticles on bulk silicon solar cells by colloidal technique in order to enhance their photovoltaic conversion efficiency by means of Plasmonic Light Scattering by metal nanoparticles. The feasible Plasmonic Light Scattering related enhancement was examined using spectral response and I–V measurements. Relative increases of the total delivered power under simulated solar irradiation were observed for cells both with and without antireflection coating using silver and gold nanoparticles.     

Efficient nanocoax‐based solar cells

The power conversion efficiency of most thin film solar cells is compromised by competing optical and electronic constraints, wherein a cell must be thick enough to collect light yet thin enough to efficiently extract current. Here, we introduce a nanoscale solar architecture inspired by a well‐known radio technology concept, the coaxial cable, that naturally resolves this “thick–thin” conundrum. Optically thick and elec‐ tronically thin amorphous silicon “nanocoax” cells are in the range of 8% efficiency, higher than any nanostructured thin film solar cell to date. Moreover, the thin nature of the cells reduces the Staebler–Wronski light‐induced degradation effect, a major problem with conventional solar cells of this type. This nanocoax represents a new platform for low cost, high efficiency solar power. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)