共查询到18条相似文献,搜索用时 93 毫秒
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SiO2薄膜的液相沉积及特性 总被引:1,自引:0,他引:1
将基片浸入到低温SiO2过饱和的六氟硅酸(H2SiF6)溶液中,在其表面上沉积SiO2薄膜。这种新的生长工艺称之为液相沉积(LPD)。本文着重介绍LPD工艺及LPD SiO2薄膜的特性。 相似文献
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SiO2薄膜是重要的低折射率材料之一, 针对离子束溅射(IBS)和电子束蒸发(EB)的SiO2薄膜, 采用红外光谱反演技术获得在400–1500 cm-1波数内的介电常数, 通过对介电能损函数的分析获得了两种薄膜在横向和纵向光学 振动模式下的振动频率和Si–O–Si键角.研究结果表明, 在EB SiO2薄膜短程有序范围内, SiO4的连接方式主要是类柯石英结构、3-平面折叠环和热液石英结构的SiO4连接方式; 在IBS SiO2薄膜短程有序范围内, SiO4的连接方式复杂主要是类柯石英结构、3-平面折叠环、 4-平面折叠环结构和类热液石英结构.
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2薄膜')" href="#">SiO2薄膜
离子束溅射
电子束蒸发
短程有序 相似文献
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利用射频磁控反应溅射技术,制备了氮掺杂的SiO2纳米薄膜.发现N掺杂SiO2体系纳米薄膜具有铁磁性.较小的氮化硅颗粒均匀分布在氧化硅基质中有利于磁有序的形成.基底温度为400℃时,样品薄膜具有最大的饱和磁化强度和矫顽力,分别为35 emu/cm3和75 Oe.薄膜的磁性可能产生于氮化硅和氧化硅的界面.理论计算表明,N掺杂SiO2体系具有净自旋.同时,由氮化硅和氧化硅界面之间的电荷转移导致的轨道磁矩也会对样品的磁性有贡献
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2薄膜')" href="#">N掺杂SiO2薄膜
射频磁控反应溅射
界面磁性
基底温度 相似文献
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以正硅酸乙酯(TEOS)为原料,采用旋转涂敷的方法,结合溶胶-凝胶技术在硅衬底上制备超低介电常数多孔SiO2薄膜.采用两种不同的改性方法对薄膜表面进行改性,傅里 叶变换红外光谱分析发现改性后薄膜中含有大量的—CH3键,从而减少了孔洞塌陷.用扫 描电子显微镜观察薄膜的表面形貌,发现薄膜内孔洞尺寸在70—80 nm之间.调节溶胶pH值,发现pH值越小凝胶时间越长.对改性样品热处理的结果表明,在300 ℃时介电常数最低达2.05.
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2')" href="#">多孔SiO2
低介电常数
溶胶-凝胶 相似文献
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对最常用的TiO2和SiO2薄膜应力, 包括应力模型、应力测试方法和不同实验条件下的应力测试结果作了研究.基于曲率法模型,对TiO2和SiO2单层膜和多层膜进行了实验测试,得到了一些有价值的结果,特别是离子辅助淀积和基板温度等工艺参数对薄膜应力的影响.提出了薄膜聚集密度是应力的重要因素,低聚集密度产生张应力,而高聚集密度产生压应力.在多层膜中通过调节工艺参数,适当地控制张应力或压应力,可使累积应力趋向于零.
关键词:
薄膜应力
离子辅助淀积
聚集密度 相似文献
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利用多靶磁控溅射技术制备了Au/SiO2纳米颗粒分散氧化物多层复合薄膜.研究了在保持Au单层颗粒膜沉积时间一定时薄膜厚度一定、变化SiO2的沉积时间及SiO2的沉积时间一定而改变薄膜厚度时,多层薄膜在薄膜厚度方向的微观结构对吸收光谱的影响.研究结果表明:具有纳米层状结构的Au/SiO2多层薄膜在560 nm波长附近有明显的表面等离子共振吸收峰,吸收峰的强度随Au颗粒的浓度增加而增强,在Au颗粒浓度相同的情况下,复合薄膜
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2纳米复合薄膜')" href="#">Au/SiO2纳米复合薄膜
多靶磁控溅射
吸收光谱
有效介质理论 相似文献
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The Raman shifts of nanocrystalline GaSb excited by an Ar^ ion laser at wavelengths 514.5, 496.5, 488.0, 476.5,and 457.9nm are studied by an SPEX-1403 laser Raman spectrometer respectively, and they are explained by phonon confinement, tensile stress, resonant Raman scattering and quantum size effects. The Stokes and anti-Stokes Raman spectra of GaSb nanocrystals strongly support the Raman feature of GaSb nanocrystals. The calculated optical spectra compare well with experimental data on Raman scattering GaSb nanocrystals. 相似文献
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Control of epitaxial growth at a-Si:H/c-Si heterointerface by the working pressure in PECVD 下载免费PDF全文
The epitaxial-Si(epi-Si) growth on the crystalline Si(c-Si) wafer could be tailored by the working pressure in plasmaenhanced chemical vapor deposition(PECVD).It has been systematically confirmed that the epitaxial growth at the hydrogenated amorphous silicon(a-Si:H)/c-Si interface is suppressed at high pressure(hp) and occurs at low pressure(1p).The hp a-Si:H,as a purely amorphous layer,is incorporated in the 1p-epi-Si/c-Si interface.We find that:(i) the epitaxial growth can also occur at a-Si:H coated c-Si wafer as long as this amorphous layer is thin enough;(ii) with the increase of the inserted hp layer thickness,lp epi-Si at the interface is suppressed,and the fraction of a-Si:H in the thin films increases and that of c-Si decreases,corresponding to the increasing minority carrier lifetime of the sample.Not only the epitaxial results,but also the quality of the thin films at hp also surpasses that at lp,leading to the longer minority carrier lifetime of the hp sample than the lp one although they have the same amorphous phase. 相似文献
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为提高稀土掺杂TiO2薄膜的上转换效率,采用溶胶-凝胶法和旋涂镀膜工艺制备了Yb3+-Er3+共掺杂SiO2/TiO2上转换光致发光薄膜,研究了SiO2对TiO2薄膜形貌以及发光性能的影响。利用FE-SEM观察了薄膜的表面形貌,利用分光光度计测试了薄膜在近红外光区域的透射率的变化,并用荧光光谱仪测试了薄膜的上转换发光光谱。结果表明:SiO2的掺杂导致TiO2颗粒尺寸显著减小,TiO2薄膜在近红外的透射率也有所下降。在980 nm红外光激发下,SiO2/TiO2薄膜在630~670 nm处获得了明显的上转换红光发射,在516~537 nm和537~570 nm处获得了较弱的上转换绿光发射。由上转换发光强度与激光泵浦功率的关系推知,绿色和红色上转换发光均为双光子吸收发射过程。 相似文献
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We have grown silicon dioxide (SiO2) on indium phosphorous (InP) substrate by liquid phase deposition (LPD) method. With inserting InP wafer in the treatment solution composed of SiO2 saturated hydrofluorosilicic acid (H2SiF6), 0.1 M boric acid (H3BO3) and 1.74 M diluted hydrochloric acid (HCl), the maximum deposition rate and refractive index for the as-grown LPD-SiO2 film were about 187.5 Å/h and 1.495 under the constant growth temperature of 40 °C. The secondary ion mass spectroscope (SIMS) and energy dispersive X-ray (EDX) confirmed that the elements of silicon, oxygen, and chloride were found in the as-grown LPD-SiO2 film. On the other hand, the effects of treatment solution incorporated with the hydrogen peroxide (H2O2) that can regulate the concentration of OH− ion were also shown in this article. The experimental results represented that the deposition rate decreases with increasing the concentration of hydrogen peroxide due to the reduced concentration of SiO2 saturated H2SiF6 in treatment solution. 相似文献