Passively Q-switched laser operation in a composite Nd:YVO4/Nd:YVO4/Nd:YVO4 crystal with a GaAs saturable absorber

By using a piece of GaAs wafer as the saturable absorber, the performance of the passively Q-switched composite Nd:YVO₄ laser with different output couplers has been demonstrated for the first time as far as we know. The largest continuous wave output power of 1.52 W is obtained at the incident pump power of 5.31 W, giving an optical conversion efficiency of 28.7% and a slope efficiency of 30.2%. The shortest pulse width of 11 ns, the largest single-pulse energy of 2.49 μJ and the highest peak power of 190 W are also obtained.     

Diode-pumped doubly Q-switched mode-locked YVO4/Nd:YVO4 laser with AO and GaAs saturable absorber

By using both acousto-optic (AO) modulator and GaAs saturable absorber, a diode-pumped doubly Q-switched and mode-locked (QML) YVO₄/Nd:YVO₄ laser is presented. The average output power and the pulse width of the Q-switched envelope have been measured. The Q-switch pulse energy of the doubly QML laser are higher than that only with GaAs. The stability of the QML laser with the dual-loss-modulation is significantly improved if compared to that only with GaAs.The experimental results show that the doubly QML YVO₄/Nd:YVO₄ laser has nearly 80% modulation depth and deeper than that of the singly passively QML pulse. The doubly Q-switched mode-locked pulse inside the Q-switched envelope has a repetition rate of 111 MHz and its pulse width is estimated to be about 700 ps. By using a hyperbolic secant square function and considering the Gaussian distribution of the intracavity photon density, the coupled equations for diode-pumped dual-loss-modulated QML laser is given and the numerical solutions of the equations are in good agreement with the experimental results.     

Nd:YVO4自受激拉曼激光器调Q锁模特性

利用Nd:YVO4激光晶体的自受激拉曼效应,结合Cr:YAG被动锁模技术和倍频技术,实现了结构紧凑的1176 nm和588 nm黄光锁模激光输出。激光器为LD端面泵浦,三镜折叠腔结构,并且采用了透过率为10%的输出镜。Nd:YVO4晶体长度为10 mm,Nd3+离子掺杂质量分数为0.2%,Cr:YAG晶体的初始透过率为67%。10 W激光泵浦时,1176 nm激光平均输出功率为123 mW,调Q包络宽度为6 ns,调Q包络内的锁模脉冲重复频率高达1 GHz。588.2 nm 黄光的平均输出功率为8 mW。     

The acousto-optic Q-switched mode-locking Nd:YVO4 laser

Q-switched mode locking (QML) has been observed in acousto-optic Q-switched Nd:YVO₄ laser that contained no mode-locking components. It was found that QML was easily realized in a long cavity and the modulation depth was observed to increase with increased cavity length. The maximum modulation depth was as high as 90%. This phenomenon is explained by the introduction of gain-related effect in the gain medium. The longitudinal modes at higher frequency, than the central frequency of the gain profile, experience positive guiding, which results in mode locking of these modes.     

Characterization of laser-diode end-pumped intracavity frequency doubled, passively Q-switched and mode-locked Nd:YVO4 laser

Simultaneous Q-switching and mode-locking in a laser-diode end-pumped intracavity frequency doubled Nd:YVO₄/KTP green laser using Cr⁴⁺:YAG saturable absorber is experimentally demonstrated. The influence of the initial transmission (T₀) of the Cr⁴⁺:YAG crystal on the Q-switched mode-locked green pulses as well as on the average green power is characterized by using Cr⁴⁺:YAG crystal with various T₀. The effect of T₀ on the pulse build-up time in intracavity second harmonic configuration is theoretically investigated. It was found that the depth of modulation for the mode-locked pulses is greatly improved at the second harmonic wavelength as compared to that for the fundamental wavelength. The average pulse duration of the individual mode-locked pulse for the second harmonic beam measured to be less than 500 ps with a repetition rate of 400 MHz.     

High repetition rate passively Q-switched diode-pumped Nd:YVO4 laser

We demonstrated an efficient and compact, diode-pumped passively Q-switched Nd:YVO₄ laser operation at 1.064 μm wavelength with high repetition rate, using Cr⁴⁺:YAG as saturable absorber, formed with a simple flat–flat resonator. The maximum CW output power of 4.05 W was obtained at the incident pump power of 8 W. For Q-switched operation, the maximum average output power was measured to be 1.4 W with the corresponding repetition rate of 200 kHz, the pulse width of 60 ns when the initial transmission of Cr⁴⁺:YAG crystal was 85%. The shortest pulse width of 12 ns, the largest pulse energy of 36 μJ and the highest peak power of 3 kW were obtained when the Cr⁴⁺:YAG crystal with an initial transmission of 60% was used.     

Passively Q-switched Nd:GdVO4 laser with GaAs saturable absorber

A xenon flash-lamp-pumped, passively Q-switched Nd:GdVO₄ laser with GaAs semiconductor saturable absorber is demonstrated. The static laser performance is investigated and the static output is 52 mJ when the pump energy is 9.45 J. The dynamic laser has the highest slope efficiency when the GaAs wafer is both the saturable absorber and output coupler. Pulses with duration of 64 ns and dynamic output of 47.6 mJ are obtained when the pump energy is 9.45 J. The highest dynamic–static ratio is 0.9:1. The coupled rate equations are used to simulate the Q-switched process of laser. The theoretical and experimental results are compared and discussed.     

Nd:YVO4自受激拉曼激光器调Q锁模特性

利用Nd:YVO4激光晶体的自受激拉曼效应,结合Cr:YAG被动锁模技术和倍频技术,实现了结构紧凑的1176 nm和588 nm黄光锁模激光输出。激光器为LD端面泵浦,三镜折叠腔结构,并且采用了透过率为10%的输出镜。Nd:YVO4晶体长度为10 mm,Nd3+离子掺杂质量分数为0.2%,Cr:YAG晶体的初始透过率为67%。10 W激光泵浦时,1176 nm激光平均输出功率为123 mW,调Q包络宽度为6 ns,调Q包络内的锁模脉冲重复频率高达1 GHz。588.2 nm 黄光的平均输出功率为8 mW。     

A diode-pumped passively Q-switched Nd:GdVO4 laser with a GaAs saturable absorption

We have demonstrated a passively Q-switched operation of Nd:GdVO₄ laser in which a GaAs crystal is used as the saturable absorber for the first time as far as we know. A maximum average output power of 1.64 W was obtained at an incident pump power of 12 W, the corresponding optical conversion efficiency and peak power were 13.7% and 116.8 W, respectively. The maximum peak energy obtained in the experiment by 50% transmission couple was 19 μJ.     

Analysis of a diode-pumped Nd:YVO4 laser passively Q switched with GaAs

A diode-pumped Nd:YVO₄ laser passively Q switched with GaAs is studied theoretically and experimentally. We have demonstrated the influence of single-photon absorption, two-photon absorption and free-carrier absorption in GaAs on the Q-switched pulse characteristics. The pulse profile, pulse energy and pulse width of the Q switching with GaAs are simulated by using the conventional rate equations of the four-level laser system. The experimental results show reasonable agreement with the theoretical results on the whole.     

Passively Q-switched Nd:LuVO4 laser using Cr:YAG as saturable absorber

A passively Q-switched all solid-state Nd:LuVO₄ 1.06 μm laser was demonstrated by using Cr⁴⁺:YAG as saturable absorber. The characteristics of average output power, pulse width, repetition rate, pulse energy, and peak power were studied with different output couplings and initial transmission of saturable absorbers. When output coupling with the transmission of 20% was used, the shortest pulse width of 16 ns at the repetition rate of 12.5 kHz was obtained, which results in the pulse energy of 71 μJ and peak power of 4.43 kW with the initial transmission of 70% of Cr⁴⁺:YAG crystal.     

LD-pumped passively Q-switched Nd:YVO4 infrared and green lasers

A laser diode directly end-pumped, passively Q-switched Nd:YVO₄/Cr:YAG laser is presented in this paper. With 600 mW incident pump laser, Q-switched 1064 nm laser with an average power of 138 mW, pulse width of 19.8 ns, repetition rate of 170.1 kHz and peak power of 40.96 W is obtained. When a KTP crystal was inserted into the cavity, Q-switched 532 nm laser with an average power of 56 mW, pulse width of 28.4 ns, repetition rate of 118.2 kHz and peak power of 16.7 W is obtained at last.     

Single output LD end-pumped passively mode-locked Nd:YVO4 laser with semiconductor saturable absorber mirror

A quarter-wave plate and the thin film polarizer(TFP) are used for the LD end-pumped passively mode-locked Nd:YVO4 laser with semiconductor saturable absorber mirror(SESAM) to obtain a single beam output with a total power of 4.8 W.An optical-optical efficiency is achieved to be 24% for a stable CW mode-locking operation at 1064 nm,with a pulse repetition rate of 70 MHz and pulse width of 16 ps.The multipulse in the pulse sequence is eliminated for reaching a peak power as high as 4 kW.     

Periodic adjustment of the position of a laser beam spot on a semiconductor saturable absorber mirror in a passively mode-locked solid-state laser

A laser diode end-pumped passively mode-locked Nd:YVO₄ solid-state laser with a semiconductor saturable absorber mirror (SESAM), in which the intracavity laser beam spot on the SESAM can be adjusted periodically, is investigated. Inserting a rectangular prism (RP) into the laser cavity is a promising approach towards the goal of periodically moving the position of the focus spot of the intracavity pulse on the SESAM surface to avoid the long-time irradiation of the laser beam on the same position, thereby solving a series of problems caused by damage to the SESAM and greatly prolonging its usage life. The adjustment of the rectangular prism in the laser cavity does not break the stable continuous wave (CW) mode-locked condition. The laser generates a stable picosecond pulse sequence at 1064 nm with an output power of 3.6 W and a pulse width of 14 ps. The instabilities of the output power and the pulse width are 1.77% and 4.5%, respectively.     

Laser–diode-pumped passively Q-switched Nd:NaY(WO4)2 laser with GaAs saturable absorber

A laser–diode-pumped passively Q-switched new type crystal Nd³⁺:NaY(WO₄)₂ (known as Nd:NYW) laser with GaAs semiconductor saturable absorber has been realized. The dependence of pulse repetition rate, pulse energy, pulse width, and peak power on pump power for different output coupler reflectivities are measured. The coupled rate equations are used to simulate the Q-switched process of laser, and the numerical solutions agree with the experimental results.     

Diode-pumped passively Q-switched intracavity frequency doubled Nd:GdVO4/KTP green laser

A compact diode-pumped passively Q-switched intracavity frequency-doubled Nd:GdVO₄/KTP green-pulse laser was demonstrated, using Cr⁴⁺:YAG as a saturable absorber in a simple flat–flat cavity. With a 5.9 W incident pump power, a passively Q-switched green laser was obtained with an average power of 397 mW, repetition rate of 40 kHz, and pulse width of 40 ns, when the initial transmission of Cr⁴⁺:YAG was 85%. The shortest pulse width of 30 ns, the highest green peak power of 696 W and the maximum pulse energy of 21 μJ were obtained when the initial transmission of Cr⁴⁺:YAG was 70%. Under CW green operation, we obtained 440 mW output power.     

The thermal effect in diode-end-pumped continuous-wave 914-nm Nd:YVO4 laser

The thermal effect and the heat generation in diode-end-pumped continuous-wave 914-nm Nd:YVO₄ lasers are investigated in detail. A theoretical model of a diode end-pumped solid-state laser is constructed to analyse the influence of fractional thermal loading on the thermal effect in the Nd:YVO₄ laser based on finite element analysis. The thermal focal lengths and the end-surface deformations of laser rods in Nd:YVO₄ quasi-three-level and four-level lasers are measured and compared with the results obtained by ordinary interferometry for the demonstration of higher thermal loading in 914-nm laser. Finally the fractional thermal loading in the Nd:YVO₄ quasi-three-level laser is calculated by matching the experimental and the simulated end deformations.     

激光二极管抽运Nd:YVO4晶体的三维热效应分析

针对激光二极管抽运的以Nd:YVO4板条晶体为增益介质的激光器件,基于有限容积法数值分析各向异性介质的热传导方程,给出了Nd:YVO4晶体板条结构的热分布数值模型,并分别模拟仿真了808nm半导体激光器双端端面抽运,大面均匀抽运,大面周期分布抽运三种抽运结构,得到了Nd:YVO4板条晶体在这三种抽运结构下的非稳态时不同时刻的温度曲线和稳态时的三维温度分布切面图.     

A novel orthogonally linearly polarized Nd:YVO4 laser

We presented a novel orthogonally linearly polarized Nd:YVO₄ laser. Two pieces of a-cut grown-together composite YVO₄/Nd:YVO₄ crystals were placed in the resonant cavity with the c-axis of the two crystals orthogonally. The polarization and power performance of the orthogonally polarized laser were investigated. A 26.2-W orthogonally linearly polarized laser was obtained. The power ratio between the two orthogonally polarized lasers was varied with the pump power caused by the polarized mode coupling. The longitudinal modes competition and the corresponding variable optical beats were also observed from the orthogonally polarized laser. We also adjusted the crystals with their c-axis parallele to each other, and a 40.7-W linearly polarized TEM₀₀ laser was obtained, and the beam quality factors were M²_x=1.37 and M²_y=1.25.     

Diode-pumped doubly Q-switched Nd:LuVO4 laser with AO modulator and GaAs saturable absorber

A diode-pumped doubly Q-switched Nd:LuVO₄ laser with an acousto-optic (AO) modulator and GaAs saturable absorber has been realized. The pulse profile of the doubly Q-switched Nd:LuVO₄ laser has an almost absolutely symmetric shape. The dependences of pulse width, single-pulse energy and peak power on the incident pump power under different AO repetition rates are measured. By considering the transverse Gaussian distribution of the intracavity photon density and the longitudinal distribution of photon density along the cavity axis, the coupled rate equations of the laser are given. These coupled rate equations are solved numerically and the theoretical results are in agreement with the experimental results.