Heat capacity of La1−x SrxMnO3 single crystals in different magnetic states

The heat capacity of three single-crystal samples of La_1?x Sr_xMnO₃ (x=0, 0.2, and 0.3) is measured in the temperature range 4–400 K. It is found that the heat capacity undergoes abrupt changes due to the transitions from the antiferromagnetic phase to the paramagnetic phase (x=0) and from the ferromagnetic phase to the paramagnetic phase (x=0.2 and 0.3). The phonon contribution to the heat capacity and the Debye characteristic temperatures for the La_0.7Sr_0.3MnO₃ sample are determined over a wide range of temperatures. The electronic density of states at the Fermi level is evaluated. It is demonstrated that an increase in the strontium concentration x brings about an increase in the electronic density of states at the Fermi level. The contributions of spin waves to the heat capacity and the entropy are estimated under the assumption that the phonon spectrum remains unchanged upon doping with Sr.     

Effect of pressure on electrical properties of SnS x Se1−x single crystals

The single crystals of tin monosulphoselenides in the form of a series SnS _x Se_1?x (where x?=?0, 0.25, 0.50,0.75 and 1) have been grown using the direct vapor transport technique (DVT). The analysis of the X-ray diffraction patterns reveals that all crystals belong to the orthorhombic crystal structure. Hall effect measurements were carried out on grown crystals at room temperature. The optical absorption measurements at room temperature have been carried out for all crystals. The values of the band gap were determined at atmospheric pressure and also calculated at high-pressure. Simultaneous thermoelectric power (TEP) and a.c. resistance measurements up to 8?GPa were carried out. The results of the effect of high-pressure on the electrical resistance of the grown crystals are reported in this paper.     

Investigation of the effect of annealing on the magnetic properties of Sn1−xEuxTe single crystals

A study of the effect of annealing on the magnetic properties of single crystals Sn_1−xEu_xTe is reported. The width of the electron paramagnetic resonance line of the crystal is found to decrease upon annealing but its g-value of 1.991 is nearly unaffected. Magnetization results indicate that the pair exchange interaction is weakly antiferromagnetic with a value of −0.67 K for the non-annealed sample and −0.29 K after annealed sample. Susceptibility measurements performed as a function of temperature also indicate the presence of EuTe clusters in the as-grown Sn_1−xEu_xTe crystals. Therefore it was deduced that the Eu²⁺ ions tend to form clusters, particularly pairs, in the as-grown crystal and these clusters disappear after annealing, as the Eu²⁺ ions occupy isolated sites in the SnTe host lattice.     

Normal state transport properties in single crystals of Ba1−xKxFe2As2 andNdFeAsO1−xFx

Hall effect and magnetoresistance Δρ/ρ(0) (MR) in the normal state have been measured on single crystals of Ba_1?xK_xFe₂As₂ and NdFeAsO_1?xF_x. Detailed analysis reveal the following conclusions: (1) For the parent phases of Ba_1?xK_x Fe₂As₂ and NdFeAsO_1?xF_x, large Hall effect and MR with strong temperature dependence were observed below a characteristic temperature corresponding to the antiferromagnetic/ structural transition. The field dependence of the Hall resistivity ρ_xy exhibits a non-linear behavior, which is accompanied by the violation of the B-square feature of the longitudinal magnetoresistivity Δρ_xx(B)/ρ_xx(0). A closer inspection further indicates that they are well related to each other and could be attributed to the multi-band effect or spin-related scattering. (2) The superconducting samples show much smaller Hall coefficient and MR in the normal state. The Hall coefficient shows a weaker temperature dependence compared to the parent phase, while the mean scattering rate 1/τ_H has a power-law like temperature dependence as 1/τ_H ∝ Tⁿ (n = 2–3). (3) For a Ba_1?xK_xFe₂ As₂ sample with T_c = 36 K, the field dependence of MR is complicated and the feature varies in different temperature regions. A drastic change of Δρ/ρ(0) was found between 80 K and 100 K, which corresponds very well to the maximum of the temperature derivative of the resistivity. This may be attributed to the spin-related scattering of electrons. (4) A comparison between the parent phase and the superconducting sample with T_c = 50 K in NdFeAsO_1?xF_x suggests that the electronic transport properties in the normal state cannot be easily understood with the simple multi-band model, while a picture concerning a suppression to the quasiparticle density of states at the Fermi energy is more reasonable.     

Electrical properties and electronic structure of Cu1−xZnxInSe2 and Cu1−xZnxInS2 single crystals

Temperature dependence of the electrical conductivity of CuInS₂–ZnIn₂S₄ and CuInSe₂–ZnIn₂Se₄ solid solutions possessing n-type conductivity has been studied. It has been established that when the temperature decreases down to ~100 to 27 K, the hopping mechanism of electrical conductivity with a variable jumping length between localized states positioned in a narrow energy band near the Fermi level becomes dominant. The main parameters of the hopping conductivity have been determined. At higher temperatures (150–300 K), in the CuInSe₂–ZnIn₂Se₄ single crystals containing 15 and 20 mol% ZnIn₂Se₄ the thermally activated conductivity with activation energy of 0.018 and 0.04 eV, respectively, is detected. Among the CuInSe₂–ZnIn₂Se₄ single crystals, samples with 5 and 10 mol% ZnIn₂Se₄ were found to be close to degenerate semiconductors. Temperature dependences of the electrical conductivity of CuInS₂–ZnIn₂S₄ single crystals are described by a more complicated function that may indicate a competition of several conduction mechanisms in these compounds. For the CuInS₂–ZnIn₂S₄ solid solutions, X-ray photoelectron core-level and valence-band spectra have been measured for both pristine and Ar⁺ ion-bombarded surfaces. Our results indicate that the Cu_1−xZn_xInS₂ single-crystal surfaces are sensitive to Ar⁺ ion-bombardment. Additionally, for the Cu_1−xZn_xInS₂ crystal with the highest ZnIn₂S₄ content, namely 12 mol% ZnIn₂S₄, the X-ray emission bands representing the energy distribution of the Cu 3d, Zn 3d and S 3p states have been measured and compared on a common energy scale with the X-ray photoelectron valence-band spectrum.     

Magnetic and electrical properties of weakly doped manganese-deficient La1 − x Ca x Mn1 − z O3 manganites

Samples of La_{1 ? x} Ca _x Mn_{1 ? z} O_{3 + δ} (x = 0.05?0.15) with deficient manganese and excess oxygen δ do not pass into a metallic state and have low spin ordering temperatures T _C at acceptor Mn⁴⁺ concentrations near the percolation threshold. These results are explained by carrier localization in clusters near cation vacancies. A break in the carrier transport chain Mn-O-Mn in the form of absent manganese favors cluster formation and decreases the double exchange energy and T _C of the samples. Closeness to the percolation threshold results in strong (more than four orders of magnitude) changes in the electrical resistivity in a magnetic field. The changes in the cluster sizes with the temperature and the magnetic field that are determined from the magnetotransport properties are satisfactorily described in the model of phase separation into small-radius metallic droplets in a dielectric paramagnetic and an antiferromagnetic matrices.     

A Magnetic resonance study of La1−x SrxMnO3 manganites

Single crystals of La_0.9Sr_0.1MnO₃ and La_0.8Sr_0.2MnO₃ manganites are examined using magnetic resonance in the temperature range 80–370 K. It is found that magnetostatic oscillations arise near the Curie temperature. The possible reasons for the appearance of additional lines in the ferromagnetic resonance (FMR) spectrum are considered, and the anisotropy field and the type of crystalline magnetic anisotropy in the La_0.8Sr_0.2MnO₃ compound are determined. It is shown that the crystalline magnetic anisotropy in the La_0.9Sr_0.1MnO₃ compound exhibits specific features associated with its type of crystal structure.     

Defect chemistry and electrical properties of La1−xSrxCoO3−δ IV. Electrical properties

This paper considers electrical properties of La_1−xSr_xCoO_3−δ in terms of defect models, such as random defect model and the cluster model. It is shown that the experimental data of the electrical conductivity may be explained in terms of the random defect model rather than the cluster model.     

Evolution of the optical properties of single-crystal La1−x SrxMnO3

An ellipsometric method is used to study the dispersion of the real ɛ ₁(ω) and imaginary ɛ ₂(ω) parts of the complex dielectric permittivity of single-crystal La_1−x Sr_xMnO₃ (x=0.1, 0.2, and 0.3) for energies from 100 meV to 5 eV at room temperature. It is found that, when lanthanum is replaced by strontium, the optical spectrum changes fundamentally. A shift in the main features of the spectrum of initial LaMnO₃ at 1.9 and 4.7 eV to lower energies takes place, as well as a partial redistribution of the optical-conductivity spectral weight in the band gap region E<1.7 eV. For compositions with x=0.2 and 0.3, a fine structure of the interband absorption is observed against a background of non-Drude optical conductivity at low energies. Fiz. Tverd. Tela (St. Petersburg) 41, 1445–1449 (August 1999)     

Magnetic properties of Nd3+ in Nd−Ba−Cu−O-compounds

Neutron diffraction, neutron spectroscopy and magnetization measurements have been employed to study the structural, electronic, and magnetic behavior of eleven compounds with the general formula Nd_1+y Ca _v Ba_2–y–v Cu₃O _x (0y0.5; 0v0.25; 6x7). The structure turned out to react to oxygen reduction similar as other 123-compounds, yielding discontinuities close to the metal-insulator-transition and the well-known relations of bond lengths as a function ofT _c. The crystalline electric field (CEF) interaction, splitting the 10-fold degenerate ground-state J-multiplet of the Nd³⁺-ions into five doublet states, was investigated by neutron spectroscopy. The derived CEF parameters have been used to determine changes in the electronic surroundings of the Nd³⁺ ions. In addition, with the help of the CEF parameters the thermodynamic magnetic properties of these compounds were calculated which turn out to be in good agreement with the experimental data.     

Influence of Sr substitution on thermoelectric properties of La1−xSrxFeO3 ceramics

Perovskite La_1−xSr_xFeO₃ (0.10 ⩽ x ⩽ 0.20) ceramics have been synthesized by the conventional solid-state reaction technique. Their electrical resistivity, Seebeck coefficient and thermal conductivity have been measured. It has been found that the increase of Sr content reduces significantly both the electrical resistivity and the Seebeck coefficient, but slightly increases the high-temperature thermal conductivity. An adiabatic hopping conduction mechanism of small polaron is suggested from the analysis of the temperature dependence of the electrical resistivity. Seebeck coefficients decrease with increasing temperature, and saturate at temperature above 573 K. The saturated value of Seebeck coefficient decreases with increasing of Sr contents, from 200 μV/K for x = 0.10 to 100 μV/K for x = 0.20. All samples exhibit lower thermal conductivity with values around 2.6 W/m K. The highest dimensionless figure of merit is 0.031 at temperature 973 K in La_0.88Sr_0.12FeO₃.     

Growth and transport properties of CaFeAsF_(1-x) single crystals

Using self-flux method,we have successfully grown the parent phase of the single crystals of CaFeAsF1-x.The X-ray di?raction indicates good crystallinity.In-plane resistivity shows a bad metallic behavior with a sharp drop of resistivity at about T SDW=119K.This anomaly is associated with the possible spin density wave(SDW)order.Interestingly near T SDW,the resistivity exhibits a cusp-like feature,which may be understood as the strong coupling effect between the electrons and the antiferromagnetic(AF)spin fluctuations.A reduction of fluorine or application of a high pressure will suppress the SDW feature and induce superconductivity.Hall effect measurements reveal a positive Hall coefficient below T SDW indicating a dominant role of the hole-like charge carriers in the parent phase.Strong magnetoresistance has been observed below T SDW suggesting multiple conduction channels of the charge carriers.     

Transverse resistance of YBa2Cu3O7−δ single crystals

Measured is the transverse electrical resistance of YBa₂Cu₃O_7−δ single crystals with different oxygen deficiency values (δ) in the temperature range T_c − 300 K. The experimental data are approximated by an empiric expression accounting for the fluctuation conductivity near T_c and the semiconductor-like resistance regime. Our analysis of the concentration dependences of the fitting parameters, in particular, reveals that the resistance temperature dependence is largely affected by the sample's non-homogeneity. The latter, in turn, causes a T_c anisotropy and variable-range hopping conductivity between different phases. The deduced maximal values of the basal-plane coherence length, ξ_xy(0), are comparable with those for low-temperature superconductors.     

Specific heat of Na1−x V2O5 single crystals

Temperature dependences of the specific heat C and the magnetic susceptibility χ of Na_1?x V₂O₅ single crystals (x=0, 0.01, 0.02, 0.03, and 0.04) are studied. In NaV₂O₅, the transition to the spin-gap state (T _c =34 K) is accompanied by a sharp decrease in χ, while C exhibits a λ-shaped anomaly. At low temperatures, the specific heat of NaV₂O₅ is approximated by the sum of phonon ～T ³ and magnon ～exp(?Δ/T) contributions, which makes it possible to estimate the Debye temperature Θ_D=336 K and the gap in the magnetic excitation spectrum Δ=112 K. With the departure from stoichiometry, the anomalies observed in the behavior of χ and C are spread and shifted to lower temperatures. The low-temperature specific heat of nonstoichiometric samples is determined by the sum of phonon and magnon components and the contribution due to the presence of defects. The values of magnetic entropy characterizing the phase transitions in Na_1?x V₂O₅ are calculated.     

Lattice dynamics and superionic properties of Cd1−xPbxF2 crystals

Reflectivity in the infrared range, Raman scattering and ionic transport properties in Cd_1−xPb_xF₂ crystals have been investigated. A “one-mode” behaviour of these crystals has been found. The role of the PbF₂ cation sub-lattice in the anion disordering process has been discussed. A correlation has been found between the ionic transport properties and the fluorine-cation interaction coefficient for Cd_1−xPb_xF₂ crystals.     

Laser-induced changes in the photoelectric properties of MnxHg1−xTe crystals

The application of pulsed laser irradiation to photoconductive n-Mn_xHg_1−xTe crystals was investigated as a possible procedure for modifying their photoelectric characteristics and increasing the photosensitivity. The photoconductivity spectra and the temperature dependences of the excess carrier lifetime of Mn_xHg_1−xTe crystals, subjected to laser irradiation with nanosecond ruby laser pulses, were studied. It was found that a range of energy density of laser pulses can be chosen to decrease the surface recombination rate and to increase the photosensitivity of the crystals. Changes in the photoelectric properties of the irradiated samples are attributed to the laser-stimulated cleaning of the surface as well as to modification of the defect structure of Mn_xHg_1−xTe crystals.     

Birefringence of CuGa(S1−x Sex)2 single crystals

The magnitude and dispersion of birefringence of single crystals of CuGa(S_1?x Se_x)₂ solid solutions is studied in the spectral region of 0.5–2.5 μ at T=300 K. The effect of the substitution of selenium for sulfur on special features of birefringence dispersion is analyzed within the framework of the single-oscillator model.     

Magnetic properties of solid solutions of the system ErxY1−xFe2

The magnetic properties of the system Er_xY_1–xFe₂ (MgCu₂ structure) in the temperature range 80–800°K are investigated. The magnetization and the coercive force H_c are measured as a function of T. For alloys with x= 0.5–1 there is a magnetic compensation point _c. The composition dependence of _c, the magnetic moment of the alloy and of the iron atoms Fe are determined. An H_c anomaly is observed in _c. In order to explain the results obtained, the presence of two types of magnetically active atoms and three types of exchange interaction are included.Translated from Izvestiya Vysshykh Uchebnykh Zavedenii, Fizika, No. 10, pp. 27–30, October, 1982.     

Doping – Dependent irreversible magnetic properties of Ba(Fe1−xCox)2As2 single crystals

We discuss the irreversible magnetic properties of self-flux grown Ba(Fe_1?xCo_x)₂As₂ single crystals for a wide range of concentrations covering the whole phase diagram from the underdoped to the overdoped regime, x = 0.038, 0.047, 0.058, 0.071, 0.074, 0.10, 0.106 and 0.118. Samples were characterized by a magneto-optical method and show excellent spatial uniformity of the superconducting state down to at least the micrometer scale. The in-plane properties are isotropic, as expected for the tetragonal symmetry, and the overall behavior closely follows classical Bean model of the critical state. The field-dependent magnetization exhibits second peak at a temperature and doping – dependent magnetic field, H_p(T, x). The evolution of this fishtail feature with doping is discussed. In particular we find that H_p, measured at the same reduced temperature for different x, is a unique monotonic function of the superconducting transition temperature, T_c(x), across all dopings. Magnetic relaxation is time-logarithmic and unusually fast. Similar to cuprates, there is an apparent crossover from collective elastic to plastic flux creep above H_p. At high fields, the field dependence of the relaxation rate becomes doping independent. We discuss our results in the framework of the weak collective pinning and show that vortex physics in iron-based pnictide crystals is much closer to high-T_c cuprates than to conventional s-wave (including MgB₂) superconductors.