Tensile stress influence on coercive properties in Fe-rich cold-drawn amorphous wires

Magnetization reversal process has been studied in ferromagnetic amorphous wires of nominal composition Fe_77.5B₁₅Si_7.5 prepared by the cold-drawing technique. Conventional hysteresis loops were measured by the fluxmetric method in the presence of the tensile stress. The measurements have been performed by short movable coils. Application of tensile stress results in increase of the remanent magnetization and decrease of the switching field. When the tensile stress is high enough, the shape of hysteresis loop is perfectly rectangular that is associated with quick enough reversals of magnetization. These hysteresis loops could be considered as quasi-magnetically bistable, but it is not exactly the standard bistability. The experiments with short movable coils have demonstrated that two domain walls (in contrast with the case of the standard bistability) propagation is responsible for the remagnetization process of the inner core.     

Structural,magnetic, and electrical properties of thin film Pd/Co layered structures

We report on properties of layered coherent structures of Pd and Co, prepared by RF sputtering. X-ray diffraction analysis characterizes these films as having a well-ordered periodic structure (periods λ in the range 10A < λ < 80A) of stacked (111) planes of fcc Co and Pd. Room temperature magnetic properties were measured with a vibrating sample magnetometer. All films are ferromagnetic, with a magnetic moment in excess of that attributable to Co. This excess, which increases as λ decreases, is interpreted as induced ferromagnetism in the Pd layers. The in-plane magnetization is harder for smaller values of λ and appears to depend mainly on the thickness of the Co layers. The in-plane electrical resistivity was measured in the range 2K–300K by a four-electrode method. Below 40K, the resistivity is dominated by residual resistivity; above this temperature, its rise is attributed mainly to the resistivities of bulk Pd and Co. The λ-dependence of the resistivity is described by a model of interfacial scattering of electrons. Evidence for the presence of coherency strains at small λ is present in the x-ray data, the magnetization behavior, as well as in the interfacial scattering mechanism deduced from the analysis of the resistivity.     

Structural, electrical, and optical properties of ZnInO alloy thin films

Indium zinc oxide (IZO) thin films with different percentages of In content (In/[In+Zn]) are synthesized on glass substrates by magnetron sputtering, and the structural, electrical and optical properties of IZO thin films deposited at different In₂O₃ target powers are investigated. IZO thin films grown at different In₂O₃ target sputtering powers show evident morphological variation and different grain sizes. As the In₂O₃ sputtering power rises, the grain size becomes larger and electrical mobility increases. The film grown with an In₂O₃ target power of 100 W displays the highest electrical mobility of 13.5 cm·V^-1·s^-1 and the lowest resistivity of 2.4 × 10^-3 Ω·cm. The average optical transmittance of the IZO thin film in the visible region reaches 80% and the band gap broadens with the increase of In₂O₃ target power, which is attributed to the increase in carrier concentration and is in accordance with Burstein-Moss shift theory.     

Structural, magnetic and electrical transport properties of Co doping in LaKFeMoO6 double perovskite

The structural, magnetic and transport properties of La_1+xK_1−xFe_1−yCo_yMoO₆ (0.0≤x≤0.1 and 0.1≤y≤0.2) series are studied. At room temperature, the crystal structure is a monoclinic system with space group P2₁/n. The antisite defect lowers with Co doping in LaKFe_1−yCo_yMoO₆ series. However, it increases with the substitution of K by La. Magnetizations increase with the increase in Co content (x=0) and with the La substitution for K, respectively. All compounds demonstrate semiconducting behavior. Their electrical resistivities increase with Co content for LaKFe_1−yCo_yMoO₆ and also increase with La for La_1+xK_1−xFe_1−yCo_yMoO₆. For the LaKFe_1−yCo_yMoO₆ the electrical transport behavior can be described by Mott variable range hopping model in the studied temperature range, whereas for the La_1+xK_1−xFe_1−yCo_yMoO₆ (x≠0 and y≠0) the electrical transport behavior follows the Mott and ES variable range hopping model in high and low temperature ranges, respectively. Each sample exhibits a large magnetoresistance effect.     

Structural,magnetic and transport properties of discontinuous granular multi-layers

Results of structural, magnetic and transport properties of magnetic Co/SiO₂ discontinuous multi-layers produced by sequential deposition are presented. Transmission electron microscopy (TEM) images show that the samples that are close to metal–insulation transition are composed by a connected network of metallic paths, and display an enhanced Hall Effect. The granular samples are composed by an almost periodic array of Co nanoparticles, and after annealing these samples show a clear evolution in the nanostructure, with increasing average Co grain sizes and decreasing size dispersion. Relationships between the nanostructure and magnetotransport properties are discussed and compared with previous results obtained in cosputtered films.     

Structural, magnetic and transport properties of Ni-doped ZnO films

In this work, Ni-doped ZnO (Zn_1−xNi_xO, x=0, 0.03, 0.06, 0.11) films were prepared using magnetron sputtering. X-ray diffraction (XRD), X-ray absorption spectroscopy (XAS), temperature dependence electrical resistance, Hall and magnetic measurements were utilized in order to study the properties of the Ni-doped ZnO films. XRD and XAS results indicate that all the samples have a ZnO wurtzite structure and Ni atoms incorporated into ZnO host matrix without forming any secondary phase. The Hall and electrical resistance measurements revealed that the resistivity increased by Ni doping, and all the Ni-doped ZnO films exhibited n-type semiconducting behavior. The magnetic measurements showed that for the samples with x=0.06 and 0.11 are room-temperature ferromagnetic having a saturation magnetization of 0.33 and 0.39 μ_B/Ni, respectively. The bound-magnetic-polaron mediated exchange is proposed to be the possible mechanism for the room-temperature ferromagnetism in this work.     

Size effects in electrical and magnetic properties of quasi-one-dimensional tin wires in asbestos

Bulk composites have been prepared based on one-dimensional fibers of natural chrisothil-asbestos with various internal diameters (d = 6–2.5 nm) filled with tin. The electrical and magnetic properties of quasi-one-dimensional Sn wires have been studied at low temperatures. The electrical properties have been measured at T = 300 K at a pressure P = 10 kbar. It has been found that the superconducting (SC) characteristics of the nanocomposites (critical temperature T_c and critical magnetic field H_c) increase as the Sn filament diameter decreases. The temperature spreading of the resistive SC transition also increases as the Sn filament diameter decreases, which is explained by the SC order parameter fluctuations. The size effects (the increase in critical temperature T_c and transition width ΔT_c) in Sn nanofilaments are well described by the independent Aslamazov–Larkin and Langer–Ambegaokara fluctuation theories, which makes it possible to find the dependence of T_c of the diffuse SC transition on the nanowire diameter. Using the temperature and magnetic-field dependences of the magnetic moment M(T, H), it has been found that the superconductor–normal metal phase diagram of the Sn–asbestos nanocomposite has a wider region of the SC state in T and H as compared to the data for bulk Sn. The magnetic properties of chrisotil-asbestos fibers unfilled with Sn have been studied. It has been found that the Curie law is fulfilled and that the superparamagnetism is absent in such samples. The obtained results indicate the absence of magnetically ordered impurities (magnetite) in the chrisotil-asbestos matrix, which allowed one to not consider the problem of the interaction of the magnetic subsystem of the asbestos matrix and the superconducting subsystem of Sn nanowires.     

Structural and electrical properties of evaporated Fe thin films

Series of Fe thin films have been prepared by thermal evaporation onto glass and Si(1 0 0) substrates. The Rutherford backscattering (RBS), X-ray diffraction (XRD), Scanning electron microscopy (SEM) and the four point probe techniques have been used to investigate the structural and electrical properties of these Fe thin films as a function of the substrate, the Fe thickness t in the 76-431 nm range and the deposition rate. The Fe/Si samples have a 〈1 1 0〉 for all thicknesses, whereas the Fe/glass grows with a strong 〈1 0 0〉 texture; as t increases (>100 nm), the preferred orientation changes to 〈1 1 0〉. The compressive stress in Fe/Si remains constant over the whole thickness range and is greater than the one in Fe/glass which is relieved when t > 100 nm. The grain size D values are between 9.2 and 30 nm. The Fe/glass films are more electrically resistive than the Fe/Si(1 0 0) ones. Diffusion at the grain boundary seems to be the predominant factor in the electrical resistivity ρ values with the reflection coefficient R greater in Fe/glass than in Fe/Si. For the same thickness (100 nm), the decrease of the deposition rate from 4.3 to 0.3 Å/s did not affect the texture and the reflection coefficient R but led to an increase in D and a decrease in the strain and in ρ for both Fe/glass and Fe/Si systems. On the other hand, keeping the same deposition rate (0.3 Å/s) and increasing the thickness t from 76 to 100 nm induced different changes in the two systems.     

非晶FezZn1-xO薄膜的结构、磁性和电性能：

采用射频共溅射方法制备了FezZn1-xO（x=0．80,0．86,0．93）非晶薄膜,该薄膜具有较强的室温铁磁性,制备态的Fe093Zn0．07O的饱和磁化强度Ms可达333．29emu／cm3,磁性能是各向同性的．与多晶的FezZn1-xO（z≤20％）不同的是样品出现了明显的异常霍尔效应（AHE）,样品均为n型半导体,载流子浓度约为10^19-10^20cm^-3．退火后的样品在低温222K下存在着电阻极小值现象．薄膜的低温电阻导电机理属于自旋依赖的电子变程跃迁机理,上述实验结果表明高Fe含量的非晶FeZnO体系有作为新型自旋电子学器件材料的可能．     

Structural, morphology and electrical properties of layered copper selenide thin film

Thin films of copper selenide (CuSe) were physically deposited layer-by-layer up to 5 layers using thermal evaporation technique onto a glass substrate. Various film properties, including the thickness, structure, morphology, surface roughness, average grain size and electrical conductivity are studied and discussed. These properties are characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), ellipsometer and 4 point probe at room temperature. The dependence of electrical conductivity, surface roughness, and average grain size on number of layers deposited is discussed.      

Epitaxial MnP thin films: epitaxial growth,magnetic and electrical properties

We have grown 500 Å MnP on undoped GaAs(1 0 0) substrate using solid-source molecular beam epitaxy. In order to characterize the crystal structure of MnP, we performed in-situ reflection high energy electron diffraction and θ–2θ XRD X-ray diffraction studies. From the measurements of superconducting quantum interference device, Quantum Design, MnP thin film shows ferromagnetic ordering at around 291.5 K. It shows a metallic resistivity in MnP thin film.     

Axial-field-dependent circular susceptibility in Fe-rich amorphous wires

The longitudinal magnetic field dependence of low-frequency circular susceptibility, χ(H), is measured for (Fe_1−xCr_x)_77.5Si_7.5B₁₅ (x=0,0.05,0.1, and 0.15) amorphous wires of radius r₀=0.07 mm. In order to explain the experimental results, on the basis of the widely accepted core–shell model, we consider that there are a constant axial anisotropy K_c in the core and a radius-dependent radial anisotropy K_s∝r⁸/r₀⁸ in the shell, both K_c and K_s being functions of stress-energy constant λ_sσ₀. A formula for χ(H) is derived from this model. The experimental data fits indicate that the magnetic structure can be well described by the improved core–shell model with reasonable values of λ_s.     

Structural, optical and electrical properties of ZnO/Zn2GeO4 porous-like thin film and wires

Zinc oxide/zinc germanium oxide (ZnO/Zn₂GeO₄) porous-like thin film and wires has been fabricated by simple thermal evaporation method at temperature about 1120 °C for 2.5 h. The structural and optical properties of the porous-like-thin film and wires have been investigated by scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD) and photoluminescence (PL) spectroscopy. Metal semiconductor metal (MSM) photodetector structure was used to evaluate the electrical characteristics by using current-voltage (I-V) measurements. Room temperature photoluminescence spectrum of the sample shows one prominent ultraviolet peak at 378 nm and a shoulder at 370 nm. In addition, broad visible blue emission peak at wavelength 480 nm and green emission peak at 500 nm are also observed. Strong photoelectric properties of the MSM in the UV demonstrated that the porous-like-thin film and wires contribute to its photosensitivity and therefore making ZnO/Zn₂GeO₄ wires potential photodetector in the shorter wavelength applications.     

Thickness-dependent magnetic order and phase-transition dynamics in epitaxial Fe-rich FeRh thin films

The control of magnetic order and phase-transition dynamics by various means is a key towards low-power spintronics. Here, we report a control on magnetic order and phase-transition dynamics by tuning film thickness in epitaxial FeRh films. Reduction of film thicknesses from 200 nm to 5 nm results in an anti-ferromagnetic to ferromagnetic phase change, accompanied by a 0.55% lattice expansion for c-axis. The phase-transition dynamics is highly dependent on the film thickness, and involves the release and recovery of lattice strain that results in a lower transition temperature and larger thermal hysteresis in thinner films. The findings help to understand the origin of thermal hysteresis and phase-transition dynamics in ultra-thin FeRh films. Possible approaches to narrow down thermal hysteresis are proposed.     

Structural and magnetic properties of high magnetic moment electroplated CoNiFe thin films

CoNiFe alloy thin films deposited at various cobalt concentrations were galvanostatically electrodeposited on the pre-cleaned copper substrates. The effects of cobalt concentration on the structural, compositional, morphological, and magnetic properties of the films were investigated. X-ray diffraction patterns revealed that the deposited films possess polycrystalline in nature with mixed (fcc–bcc) cubic structure at optimized cobalt concentration. Microstructural properties of the films were calculated from predominant diffraction lines. The surface morphology and surface roughness were characterized using scanning electron microscopy and atomic force microscopy, respectively. EDAX results were revealed that the cobalt content increases as nickel content decreases whereas ferrous content initially increases and then eventually decreases in the CoNiFe alloy. VSM results show a higher value of saturation magnetization (4πM _s) above 2 T with coercivity 154 A/m for films deposited in the optimized deposition condition.     

Structural analysis, magnetic and electrical properties of samarium substituted lithium-nickel mixed ferrites

A series of Sm-doped Li-Ni ferrites with formula of (Li_0.5Fe_0.5)_0.4Ni_0.6Sm_yFe_2−yO₄, where 0.0≤y≤0.1 were prepared by double sintering ceramic technique. The structure was characterized by X-ray diffraction, which has confirmed the formation of single-phase spinel structure. The samarium concentration dependence of lattice parameters obeys Vegard's law. The octahedral site radii increased with Sm content while the tetrahedral site radii decreased. Deviation from the ideal crystal structure (Δ) is found to decrease with Sm substitution, and the hopping length on the octahedral site is found to increase with Sm content. Hall measurement confirmed p-type conductivity behavior for Sm-doped ferrite and the main charge transport mechanism is hopping of halls between Ni²⁺ and Ni³⁺. Sintering at 1300 °C resulted in low resistivity ferrite, which was found to increase with Sm content. Resistivity is governed by both charge carrier mobility and carrier concentration. It decreases with frequency, and this behavior with frequency is discussed according to Koop's theorem. The dielectric constant is found to decrease more rapidly at low frequencies than at higher frequencies while the dielectric constant increases with Sm content. The decrease in ε″ with frequency agrees with Deby's type relaxation process. Maximum in ε″ is observed when the hopping frequency is equal to the external electric field frequency. The variation in tan δ with frequency shows a similar nature to that of ε″ with frequency. The magnetization under applied magnetic field for the samples exhibits a clear hysteretic behavior. The scanning electron microscope (SEM) studies showed that the domain walls may tend to be trapped (pinned) by non-magnetic inclusions, precipitates and voids. The saturation magnetization (M_S) increases with the sintering temperature, while the coercivity (H_Ci) is found to decrease.     

Improved electrical and magnetic transport properties of La0.8Ba0.2MnO3 thin films by oxygen annealing

正Dear Editors,The properties of mixed-valence manganites are sensitive to the synthesis conditions[1].For oxide films grown by pulsed laser deposition(PLD),the physical properties are affected obviously by the growth oxygen pressure and annealing treatment[2-5].Using the PLD method,manganite oxides are usually grown at different oxygen pressures to investigate the     

General electrical transport properties of polycrystalline multi-layered metallic thin films

We have derived, following the recent theoretical calculation of the electrical conductivity of multi-layered metallic thin films, a general solution of the electrical conductivity for those films with grain structures, since those structures give important contributions to the electrical transport properties of polycrystalline thin film. The temperature coefficients of resistivity have also been obtained.     

Electronic structure,magnetic exchange,and electrical transport properties of the magnetic compounds EuS,GdS and GdP

Optical reflectivity measurements between 0.03 eV and 12 eV have been performed on the isomorphic compounds EuS, GdP and GdS. A Kramers-Kronig analysis of these data permits the evaluation of intra- and interband transitions and the derivation of the electronic structure. The conducting behavior changes from semiconducting for undoped EuS to metallic for Eu_0.99Gd_0.01S and GdS; also GdP exhibits metal-like conductivity. In GdP and GdS the stoichiometry can be varied while keeping the phase purity. In these compounds the concentration of free carriers depends on the stoichiometry just as does the mobility, which in addition depends also on temperature. Large scattering anomalies are observed near the magnetic ordering temperatures for all compounds. In spite of the same spectroscopic ground state ${}^8\text{S}\text{7}\text{2}$ for EuS, GdP and GdS only EuS is ferromagnetic, the others being antiferromagnetic. In the alloy system GdPGdS the free carrier concentration could be varied over nearly two orders of magnitude and the superexchange and free carrier contribution to the total exchange interaction could be separated. Clearly the free carriers contribute a RKKY interaction.An attempt is made to correlate and explain the different physical properties of the related compounds EuS, GdP and GdS by their specific electronic structure.