个人中子剂量气泡探测器研制

中子固体气泡探测器被认为是唯一能够满足国际辐射防护委员会ICRP60要求的个人中子剂量计，它具有从低能中子到高能中子的平坦响应曲线和对γ射线不灵敏的优点.本工作将过热液滴均匀地分布在一种软聚合物中，制成了个人中子气泡剂量计,其灵敏度达到每毫雷姆40个气泡.还介绍了个人中子剂量气泡探测器的原理和制作过程.Neutron solid bubble detector was considered as a unique one for meeting the need of the personal neutron dosimeter recommended by International Committee of radiation protection,ICRP60.It has the flat response for neutron from low energy to high energy,and insensitive for gamma rays. In this work,superheated liquid drops were dispersed into a kind of soft polymer homogeneously.A personal neutron bubble dosimeter has been made,and the sensitivity reached to about 40bubbles/mrem.The principle and the processing procedure of bubble detector were also introduced in this paper.     

量子点场效应单光子探测器二维电子气载流子浓度研究

设计了一种基于场效应晶体管的量子点场效应单光子探测器(quantum dot field effect transistor,QDFET),建立了二维电子气(two-dimensional electron gas,2DEG)的薛定谔方程和泊松方程,通过对薛定谔方程和泊松方程的自洽求解,对2DEG的载流子浓度进行了模拟。模拟结果显示,AlGaAs的Al组分、δ掺杂层的掺杂浓度以及隔离层的厚度对于2DEG的载流子浓度均有影响。为了使2DEG具有较高的载流子浓度,AlGaAs的Al组分应为0.2~0.4,δ掺杂浓度应为6~8×10~(13)/cm~2,隔离层厚度应在50nm以下。通过对2DEG的载流子浓度进行研究,可以掌握2DEG载流子浓度的影响因素,从而通过优化QDFET结构,可提高2DEG的载流子浓度。这对于高灵敏度QDFET的制备具有重要的意义和应用价值。     

基于石墨烯-钙钛矿量子点场效应晶体管的光电探测器

以等离子增强化学气相沉积法制备的石墨烯作为导电沟道材料,将其与无机CsPbI_3钙钛矿量子点结合,设计并制备了石墨烯-钙钛矿量子点场效应晶体管光电探测器.研究和分析了石墨烯作为场效应晶体管的电学特性及其与钙钛矿量子点结合作为光电探测器的光电特性.结果表明,石墨烯在场效应晶体管中表现出良好的电学性质,其与钙钛矿量子点的结合对波长为400 nm的光辐射具有明显的光响应,在光强为12μW时器件光生电流最大为64μA,响应率达6.4 A·W~(-1),对应的光电导增益和探测率分别为3.7×10~4,6×10~7Jones(1 Jones=1 cm·Hz~(1/2)·W~(-1)).     

平面天线在场效应晶体管太赫兹探测器中的应用

为了提高场效应晶体管太赫兹探测器的响应度并降低噪声等效功率,需要对探测器集成平面天线的结构进行合理设计与优化,本文对集成平面天线结构的场效应晶体管太赫兹探测器的研究进行了深入调研。首先,对场效应晶体管太赫兹探测器的工作原理进行了分析,介绍了集成平面天线如何解决耦合太赫兹波效率低的问题。然后,介绍了一些常用的平面天线结构,包括偶极子天线、贴片天线、缝隙天线、grating-gate和其他类型的结构,比较了各种天线的性能以及引入后对太赫兹探测器响应度的影响。通过对比不同天线结构的探测器响应度和噪声等效功率等参数指标,发现:采用平面天线结构之后,场效应晶体管太赫兹探测器的响应度有了大幅度的提升,各种类型的天线对探测器响应度都有不同程度的提升。本文着重介绍了几种集成于场效应晶体管的平面天线结构,包括各种天线的性能和研究进展,最后分析了场效应晶体管太赫兹探测器存在的问题和发展趋势。     

Experimental clarification of orientation dependence of germanium PMOSFETs with AlzO3/GeOx/Ge gate stack

An extensive and complete experimental investigation with a full layout design of the channel direction was carried out for the first time to clarify the orientation dependence of germanium p-channel metal-oxide-semiconductor field-effect transistors （PMOSFETs）. By comparison of gate trans-conductance, drive current, and hole mobility, we found that the performance trend with the substrate orientation for Ge PMOSFET is （110）〉（111） ~ （100）, and the best channel direction is （110）/[110]. Moreover, the （110） device performance was found to be easily degraded as the channel direction got off from the [ 110] orientation, while （100） and （111） devices exhibited less channel orientation dependence. This experimental result shows good matching with the simulation reports to give a credible and significant guidance for Ge PMOSFET design.     

半导体器件总剂量辐射效应的热力学影响

对商用三极管和MOS场效应晶体管进行了不同环境温度下的总剂量辐照实验,对比了不同辐照温度对这两种器件辐射效应特性的影响。实验结果表明,对于同一辐照总剂量,三极管的基极电流、电流增益和MOS场效应晶体管的阈值电压漂移值都随着辐照温度的不同而存在较大的差异。总剂量为100 krad,辐照温度分别为25,70,100 ℃时,NPN三极管的电流增益倍数分别衰减了71,89和113,而NMOS晶体管的阈值电压V_T分别减少了3.53,2.8,2.82 V。     

MOS结构电离辐射效应模型研究

基于氧化层空穴俘获和质子诱导界面陷阱电荷形成物理机制的分析,分别建立了MOS结构电离辐射诱导氧化层陷阱电荷密度、界面陷阱电荷密度与辐射剂量相关性的物理模型.由模型可以得到,在低剂量辐照条件下辐射诱导产生的两种陷阱电荷密度与辐射剂量成线性关系,在中到高辐射剂量下诱导陷阱电荷密度趋于饱和,模型可以很好地描述这两种陷阱电荷与辐射剂量之间的关系.最后讨论了低剂量辐照下,两种辐射诱导陷阱电荷密度之间的关系,认为低辐射剂量下两者存在线性关系,并用实验验证了理论模型的正确性.该模型为辐射环境下MOS器件辐射损伤提供了更 关键词： MOS结构 辐射 界面陷阱 氧化层陷阱     

高通量下GEM探测器高压供电模式研究

GEM探测器的供电一般采用电阻链分压供电模式和多路分立供电模式,在低通量X射线下测量时区别不大,但是在高通量X射线时,电阻链分压供电模式会带来饱和效应引起工作电压的变化,造成探测器工作不稳定。本研究在高通量X 射线照射下,研究了有效面积为100 mm100 mm三层级联GEM探测器的有效增益(稳定性) 与不同高压供电模式的关系。通过测量不同分压电阻值(1, 2, 5 到30 MΩ)的实验研究,发现随着X 射线通量的增加,在电阻链分压供电模式下,出现了GEM探测器感应电极的读出电流饱和趋势,分析了可能导致饱和效应出现的原因。结果表明,当入射X射线在探测器上的有效吸收剂量不断增加时,电阻链供电模式需要调整分压单元电阻值,或者采用多路分立供电模式,从而避免因饱和效应引起的GEM探测器有效增益的变化,实现探测器稳定的工作状态。There are two methods of the HV power supply for the GEM detector. One is a HV channel divided by the resistive chain and the other is the several separate HV channels. In the smaller dose rate of X-ray, all of the methods are similar. When the dose rate increases, the resistive chain-dividing mode has more obvious saturation effect and the working voltage of the GEM detector is unstable. In the paper, a GEM detector with an effective area of 100 mm100 mm has been studied in the high dose rate using X-tube. The unit values in the divider resistance chain are set to 1, 2, 5 and 30 MΩ respectively in the test. With the resistive chain-dividing mode, the readout current of the GEM detector’s anode tends to saturate when the dose rate of X-ray increases,and the reasons of the saturation effect are analyzed. The results indicate that the effective absorbed dose of X-ray by the triple GEMs detector reaches to the pecific value and the divider resistance needs to re-select, even the several separate HV channels mode should be considered. It will keep the constant of the working voltage of the GEM detector without the saturation effect and gain variation and the performance of GEM detector is stable.     

气体电子倍增器(GEM)聚酰亚胺膜结构的研制

气体电子倍增器(GEM, Gas Electron Multiplier)是近些年发展的一种新的气体探测器, 具有计数率和位置分辨率高等优点, 在粒子物理和X光成像等领域有着广泛的应用前景, 近些年来得到了很快的发展. 该探测器发展的关键问题之一就是GEM膜结构的制造, 该结构需要利用光刻等多项技术来完成, 工艺复杂, 研制困难. 本文介绍了开发GEM膜结构的研究结果, 通过干法和湿法腐蚀的研究和对比, 优化出GEM膜结构制造的一种工艺过程, 并利用该工艺成功完成了~GEM~膜结构的制造, 为国内GEM气体探测器的研究和应用奠定了基础.     

ZnO 紫外探测器的研究

利用水热法生长的N型优质ZnO晶体材料蒸镀了Au、Ag、Al金属,制备出金属-半导体-金属型(MSM)ZnO紫外探测器,测试了五种接触类型的ZnO紫外探测器(Au-ZnO-Au、Ag-ZnO-Ag、Au-ZnO-Al、Ag-ZnO-Al、Al-ZnO-Al)在365nm紫外光光照前后的I-V特性曲线。实验表明Au-ZnO-Au 型、Ag-ZnO-Ag型的探测器的光电流是暗电流的100 万倍,因此,Au-ZnO-Au型、Ag-ZnO-Ag型的ZnO紫外探测器性能比Au-ZnO-Al、Ag-ZnO-Al、Al-ZnO-Al型的优越。ZnO材料的电阻率对ZnO紫外探测器的光电流有较大的影响。在相同偏压下,电阻率越大,探测器的光电流越小。ZnO ultraviolet(UV) detectors with Metal-Semiconductor-Metal(MSM) structure were fabricated by the vacuum evaporation of Au, Ag, and Al on the n-type ZnO single crystal, which was grown with hydrothermal synthesis method. Five types of MSM ZnO detectors(Au-ZnO-Au, Ag-ZnO-Ag, Au-ZnO-Al, Ag-ZnO-Al,Al-ZnO-Al) were illuminated with 365 nm UV light respectively, and their corresponding I-V(Current-Voltage) characteristics were measured. The UV photocurrent values for Au-ZnO-Au and Ag-ZnO-Ag detectors were 1x106 times than their dark current values, and these facts imply that the Au-ZnO-Au and Ag-ZnO-Ag detectors were rather good UV detectors compared to Au-ZnO-Al, Ag-ZnO-Al, Al-ZnO-Al detectors. The photocurrent of the MSM ZnO detectors was also sensitive to the cubic resistance of the ZnO crystal. And it’s found that the higher resistance rate the ZnO crystal the smaller photocurrent value the detector under the same working voltage.     

三级GEM气体探测器性能的实验研究

GEM探测器是一种新型微型气体探测器(Micro-Pattern Gas Detector), 在粒子物理实验及低能X射线成像系统中有着较大的应用前景. 文章研制了一种适用于低能X射线成像和带电粒子径迹测量的三级GEM气体探测器. 使用放射源⁵⁵Fe对其气体放大特性、电荷传输效率及能量分辨本领等性能进行了实验研究, 重点研究了传输区电场对气体有效增益和能量分辨本领的影响. 实验结果表明, 三级GEM探测器的暗电流和噪声较小, 有效增益能够达到10⁵以上并稳定地工作, 对5.9keV的X射线能量分辨率可达24%, 传输区电场强度大于3000V/(cm.atm)时, 能量分辨率基本稳定在30%左右.     

气体探测器雪崩过程的研究

基于汤逊气体放大电子雪崩模型和一定的物理假设,导出描绘气体探测器中正比模式和有限正比模式的一个统一公式.该公式很好地符合实验事实,由此还得到了描述空间电荷作用强弱的参数──等效电容以及表征探测器工作状态的参量──线性度.同时,在假定SQS雪崩中空间电荷起重要作用的情况下,该公式很好地描述了其输出电量随高压的线性关系.     

双层飞行时间探测器(TOF)的性能研究

利用BC408塑料闪烁体直接耦合R2490–05高抗磁光电倍增管,组成双层飞行时间探测器.通过2GeV的π–束流测量,结果表明其本征时间分辨(标准偏差)≤50ps.利用该探测单元组成的飞行时间探测器系统,以其时间性能、结构、技术成熟和价格的优势,可以应用到τ–c工厂的带电粒子鉴别系统上.     

30.4nm极紫外成像探测器的实验研究

报导了最新研制的30.4 nm极紫外成像探测器的实验研究结果.该探测器采用了楔条形阳极(WSA)、高增益v型级联微通道板组件、低噪声电子读出系统等先进技术,利用单光子计数成像技术在实验审成功获得了模拟图像.搭建了相应的实验系统,对探测器成像的线性度、空间分辨率、暗计数等性能进行了实验研究.结果表明,该探测器具有φ45 nm的有效面积,空间分辨率优于100μm,暗计数率低[0.4 count/(cm2·s]、成像线性度好、结构简单等优点.     

HPGe 探测器晶体尺寸及效率的研究

采用蒙特卡罗方法模拟计算光子的探测效率需对高纯锗( HPGe ) 探测器进行准确的建模。模拟计算研究了HPGe 晶体长度对探测效率的影响,并在空间不同的测量位置对放射源进行测量,将模拟计算与实验测量相结合,对探测器晶体的尺寸进行调整,获得了HPGe 探测器晶体的模拟计算的准确尺寸,并在122s1 332 keV 能量范围内对模拟结果进行了验证。结果表明,在此能量范围内HPGe 探测器的探测效率的模拟计算值与实验测量值的相对偏差大多数在5% 内,并建立点源探测效率与探测器轴向距离的关系。The accurate shape of HPGe detector is needed in order to calculate its detection efficiency with Monte Carlo methods. In our calculation, the influence of the HPGe crystal size on efficiency has been investigated; the final crystal sizes were determined by comparison with experiments and were validated by the experimental efficiency obtained at several source-to-detector positions. The results show that when the crystal dimensions determined are used to calculate the detection efficiency in the energy range 122s1 332 keV, the relative deviations between simulated and most experimental results were within 5%. In addition, the relationship between detection efficiency and axial distance to detector was established.     

P-型半导体探测器在放射治疗中的剂量特性研究

电子束半导体探测器的测量精度易受到射线的能量、剂量率、入射方向和环境温度等条件的影响。此外,电子束测量射野中半导体探测器的存在将干扰均匀射野剂量场的正常分布。通过对P-型电子束半导体探测器在不同的电子束照射条件下的实际剂量测量,定量地评估了不同照射条件下电子束半导体探测器的剂量特性,以及它对电子束均匀照射野扰动的影响。The measurement accuracy of electron beam by using semiconductor detector is easily affected by beam energy, dose rate, beam incidence direction, environment temperature etc. Furthermore, the presence of the detectors on the patient surface perturbs the distribution of the radiation field. In the paper, the dose characteristics of semiconductor detector are quantitatively discussed. The perturbation of the symmetrical radiation field is investigated based on the measured results of P-type electron beam detector under different clinical conditions.