2,7-二癸基-[1]苯并噻吩[3,2-b][1]-苯并噻吩的制备及性能研究

以邻氯苯甲醛、NaHS·xH2O、癸酰氯为原料,经消去、酰化,还原反应合成2,7-二癸基二苯并二噻吩(C10-BTBT)。通过核磁共振表征和确证。本文研究了C10-BTBT光学性能、热学性能、电学性能以及环境稳定性。紫外-荧光光谱研究证明,化合物在近紫外光激发下发出明亮的蓝光,发射中心波长在352nm。液晶相的相转变温度通过差热扫描仪测定,测量结果为熔点Tcp=112℃,清亮点Tmp=125℃。通过喷墨打印技术制备了底栅顶接触结构的2,7-二癸基二苯并二噻吩的OTFT器件,场效应平均迁移率达到0.1cm2/V·s,最大迁移率达到0.25cm2/V·s,开关比超过104。放置空气中不同时间,器件开态电流和开关比没有较大变化。     

有机薄膜电致发光器件的热效应及器件失效过程研究

制备器件的同时也在铟锡氧化物 (ITO)和各层有机薄膜上覆盖一层不透气的薄膜 ,然后快速退火 ,发现了导致有机薄膜电致发光器件的热效应及器件失效的可能因素 ,从而提出了一种与有机薄膜电致发光器件制备工艺完全兼容的工艺检测方法———覆盖加热对比法     

C60场效应晶体管的制备及修饰层对器件性能影响的研究

以重掺杂Si片作为衬底,SiOe／聚甲基丙烯酸甲酯（PMMA）为双栅绝缘层,C60为有源层,制备了不同修饰层的有机场效应晶体管（OFETs）;研究了不同修饰层的器件对于场效应性能的影响。实验表明,与未加修饰层的器件相比,经过修饰的器件性能有一定的提高,其中Alqa／LiF双修饰层器件的场效应迁移率达到最大,为1．6×1...     

具有双绝缘层和修饰电极的薄膜场效应晶体管

研究了具有OTS/SiO2双绝缘层结构及MoO3/Al电极结构的有机薄膜晶体管.器件是以热生长的Si02作为有机薄膜晶体管的栅绝缘层,酞菁铜作为有源层的.OTS/SiO2双绝缘层的结构提高了器件的场效应迁移率和开关电流比,降低了阈值电压.实验表明在同样的栅极电压下,具有MoO3/Al电极的器件和金电极的器件有着相似的源漏输出电流.结果显示具有OTS/SiO2双绝缘层及MoO3/Al电极结构的器件能有效改进有机薄膜晶体管的性能.     

具有双绝缘层和修饰电极的薄膜场效应晶体管

研究了具有OTS/SiO2双绝缘层结构及MoO3/Al电极结构的有机薄膜晶体管.器件是以热生长的Si02作为有机薄膜晶体管的栅绝缘层,酞菁铜作为有源层的.OTS/SiO2双绝缘层的结构提高了器件的场效应迁移率和开关电流比,降低了阈值电压.实验表明在同样的栅极电压下,具有MoO3/Al电极的器件和金电极的器件有着相似的源漏输出电流.结果显示具有OTS/SiO2双绝缘层及MoO3/Al电极结构的器件能有效改进有机薄膜晶体管的性能.     

基于有机薄膜晶体管电特性曲线获取迁移率方法的研究

场效应迁移率是描述有机薄膜晶体管(OTFT)性能的 重要参数之一,目前OTFT场效应迁移率主要根据实验测得OTFT电特性曲线通过拟合计算方法 获得。本文针对这种方法进行深入研究发现,OTFT的场效应迁 移率与其工作状态有关。在线性工作状态下,OTFT的线性区场效应迁移率随 着 栅电压的增加而增大;在饱和工作状态下,当漏电压VD>1.5VGmax时,饱和区场效应迁移率 为一定值,表明采用此值表征OTFT的电性能更加客观和精确。     

Spatial Mapping of Morphology and Electronic Properties of Air‐Printed Pentacene Thin Films

To accelerate the pace of materials discovery and application, comprehensive links need to be established between a material's structure, properties, and process conditions used to obtain the material and/or final application format. This work examines the dry printing of pentacene thin film transistor (TFT) channels by guard flow‐enhanced organic vapor jet printing (GF‐OVJP), a technique that enables direct, solvent‐free, additive patterning of device‐quality molecular semiconductors in air. Deposition in air entails non‐trivial effects at the boundary between ambient surroundings and the gas jet carrying the semiconductor vapor that influence the morphology and properties of the resulting electronic devices. Synchrotron X‐ray diffraction is employed, complemented by measurement of electronic properties of GF‐OVJP deposited films in a TFT to reveal how the morphology and electronic properties of the films depend on thickness, location within the printed pattern, nozzle translation velocity, and other process parameters. The hole field‐effect mobility of the printed pentacene film is linked quantitatively with its crystallinity, as well as with extent of exposure to ambient air during deposition. The analysis can be extended to accurately predict the performance of devices deposited in air by GF‐OVJP, which are demonstrated here for a planar, large area deposit.     

Analysis of the persistent photoresponse of C8BTBT transistors in the near-bandgap spectral region

The variations in physical parameters of an organic field-effect transistor having dioctylbenzothieno[2,3-b]benzothiophene (C8BTBT) as the channel semiconductor were investigated under different light irradiation conditions at wavelengths of 350 nm, 370 nm, 400 nm and by increasing exposure doses. The progress of the electro-optical history of the transistor was evaluated by repeating I–V scan cycles both in the dark and under light exposure. The information recorded upon different exposure times was used to detect the photoactivated charge-trapping effects. The device showed a stable I–V response in the dark bias (V_DS = −10 V, −10 V ≤ V_GS ≤ +10 V) conditions and a persistent threshold voltage (V_T) shift under illumination at all irradiation wavelengths. We suggested that the observed dose-dependent V_T drifts were due to charge retention in trap sites within the organic semiconductor. The threshold voltage was recognized as the main parameter affected by charge retention. V_T variations were modelled versus time through a single exponential revealing a maximum in charge relaxation times for irradiations at wavelengths of 370 nm, in proximity of the C8BTBT bandgap energy. Furthermore, bias-stress effects and persistent photoinduced V_T drifts were found to depend on comparable characteristic times. Therefore, a common nature for both the bias-stress decay and relaxation from photoexcitation mechanisms is likely.     

Formaldehyde OTFT Sensors Based on Airbrushed Different Ratios of P3HT/ZnO Films

The formaldehyde (HCHO) detecting at room temperature is of great significance. Different ratios of P3HT/ZnO composite films (3:1, 1:1, and 1:3) were deposited on the organic thin film transistor (OTFT) by spray-deposition technology, and the electrical properties and HCHO-sensing properties of all the prepared OTFT devices were measured by Keithley 4200-SCS source measurement unit. The results show that the OTFT sensor based on the P3HT/ZnO films with the ratio of 1:1 exhibited the best output and transfer curves. Different changing tendency were observed with the increase of ZnO proportion when exposed to HCHO at room temperature, and the device with the ratio of 1:1 behaved a good response and recovery characteristics.     

并五苯有机薄膜晶体管电学性能研究

制作了以并五苯为半导体有源层材料的有机薄膜晶体管。用热氧化的方法制备了一层230nm的二氧化硅栅绝缘层并用原子力显微镜(AFM)分析了表面形貌。研究了器件的电学性能,得到的并五苯有机薄膜晶体管器件载流子迁移率为8.9×10-3cm2/V.s,器件的阈值电压和开关电流比分别为-8.2V和1.0×104。     

p-Si TFT栅绝缘层用SiNx薄膜界面特性的研究

以NH3和SiH4为反应源气体,在低温下采用射频等离子体增强化学气相沉积(RF-PECVD)法在多晶硅(p-Si)衬底上沉积了SiNx薄膜.系统地分析讨论了沉积温度、射频功率、反应源气体流量比对SiNx薄膜界面特性的影响.分析表明,沉积温度和射频功率主要是通过影响SiNx薄膜中的si/N比和H含量影响薄膜的界面特性,而NH3/SiH4流量比则主要通过影响薄膜中的H含量影响薄膜界面特性.实验制备的SiNx薄膜层中的固定电荷密度、可动离子密度、SiNx与p-si之间的界面态密度分别达到了1.7×1012/cm2、1.4×1012/cm2、3.5×1012/(eV·cm2),其界面特性达到了制备高质量p-si TFT栅绝缘层的性能要求.     

八羟基喹啉金属配合物的发光特性的研究

合成了八羟基喹啉铝和八羟基喹啉锌．测量了粉末和薄膜的荧光光谱．并分析了从粉末到薄膜发射峰红移的原因。制备了单层和双层的器件，从载流子注入平衡的角度分析了器件的救率变化的原因。     

YMnO_3薄膜的铁电性能及其应用

对金属 -铁电体 -半导体场效应晶体管器件而言 ,具有六方晶系结构的稀土锰酸盐 ( Re Mn O3)是性能优良的薄膜材料 ,它们的介电常数低 ,仅仅只有单一的极化轴 ,没有挥发性的元素 Pb、Bi等。本文作者对 Re Mn O3材料的结构特征、制备方法及其铁电性能等进行了介绍 ,并指出存在的困难及其发展方向。