Nuclear matter properties in relativistic mean-field model with σ- ω coupling

The σ-ω coupling is introduced phenomenologically in the linear σ-ω model to study the nuclear matter properties. It is shown that not only the effective nucleon mass M^* but also the effective σ meson mass m _σ ^* and the effective ω meson mass m _ω ^* are nucleon-density-dependent. When the model parameters are fitted to the nuclear saturation point, with the nuclear radius constant r ₀ = 1.14 fm and volume energy a ₁ = 16.0 MeV, as well as to the effective nucleon mass M ^* = 0.85M, the model yields m _σ ^* = 1.09m _σ and m _ω ^* = 0.90m _ω at the saturation point, and the nuclear incompressibility K ₀ = 501 MeV. The lowest value of K₀ given by this model by adjusting the model parameters is around 227 MeV. Received: 23 March 2001 / Accepted: 8 June 2001     

Impurity band in SnBi<Subscript>4</Subscript>Se<Subscript>7</Subscript>: thermoelectric power and electrical resistivity measurements

Thermoelectric power and electrical resistivity measurements on polycrystalline samples of Bi₂Se₃ and stoichiometric ternary compound in the quasi-binary system SnSe–Bi₂Se₃ in the temperature range of 90–420 K are presented and explained assuming the existence of an impurity band. The variation of the electron concentration with temperature above 300 K is explained in terms of the thermal activation of a shallow donor, by using a single conduction band model. The density of states effective mass m ^*=0.15m ₀ of the electrons, the activation energy of the donors, their concentration, and the compensation ratio are estimated. The temperature dependence of the electron mobility in conduction band is analyzed by taking into account the scattering of the charge carriers by acoustic phonon, optical phonon, and polar optical phonon as well as by alloy and ionized impurity modes. On the other hand, by considering the two-band model with electrons in both the conduction and impurity bands, the change in the electrical resistivity with temperature between 420 and 90 K is explained.     

Electron screening in backward elastic scattering

Abstact: The elastic scattering cross sections, σ (E,θ), for the systems He+Ta and He+W have been measured at θ_lab=165° and E _lab=76.1 keV to 3.988 MeV using targets with a thickness of a few atomic layers. The results are smaller than the results given by the Rutherford scattering law, σ_R(E,θ), due to the effects of electron screening and can be described by σ(E,θ)/σ_R(E,θ)=(1+U_e/E)⁻¹, where U _e is an atomic screening potential energy. The deduced average value, U _e=28 ± 3 keV, is consistent with the Moliére- and Lenz-Jensen-models as well as electron binding energies. Received: 25 May 1998     

Effect of ionizing radiation on the dielectric characteristics of TlInSe<Subscript>2</Subscript> and TlGaTe<Subscript>2</Subscript> single crystals

The temperature dependences of the electrical conductivity and the permittivity of TlInSe₂ and TlGaTe₂ crystals unirradiated and irradiated with 4-MeV electrons at a doze of 10¹⁶ cm⁻² have been investigated. It has been established that electron irradiation leads to a decrease in the electrical conductivity σ and the permittivity ɛ over the entire temperature range under study (90–320 K). It has been revealed that the TlInSe₂ and TlGaTe₂ single crystals undergo a sequence of phase transitions characteristic of crystals of this type, which manifest themselves as anomalies in the temperature dependences σ = f(T) and ɛ = f(T). Electron irradiation at a doze of 10¹⁶ cm⁻² does not affect the phase transition temperatures of the crystals under investigation.     

Quantum oscillations of the resistivity and hall coefficient and the quantum limit in Bi<Subscript>0.93</Subscript>Sb<Subscript>0.07</Subscript> alloys in a magnetic field along the trigonal axis

The dependences of the electrical resistivity ρ and the Hall coefficient R on the magnetic field have been measured for single-crystal samples of the n-Bi_0.93Sb_0.07 semiconductor alloys with electron concentrations in the range 1 × 10¹⁶ cm⁻³ < n < 2 × 10¹⁸ cm⁻³. It has been found that the measured dependences exhibit Shubnikov-de Haas quantum oscillations. The magnetic fields corresponding to the maxima of the quantum oscillations of the electrical resistivity are in good agreement with the calculated values of the magnetic fields in which the Landau quantum level with the number N intersects the Fermi level. The quantum oscillations of the Hall coefficient with small numbers are characterized by a significant spin splitting. In a magnetic field directed along the trigonal axis, the quantum oscillations of the resistivity ρ and the Hall coefficient R are associated with electrons of the three-valley semiconductor and are in phase with the magnetic field. In the case of a magnetic field directed parallel to the binary axis, the quantum oscillations associated both with electrons of the secondary ellipsoids in weaker magnetic fields and with electrons of the main ellipsoid in strong magnetic fields (after the overflow of electrons from the secondary ellipsoids to the main ellipsoid) are also in phase. In magnetic fields of the quantum limit ħω _c /2 ≥ E _F, the electrical conductivity increases with an increase in the magnetic field: σ₂₂(H) ∼ H ^k . A theoretical evaluation of the exponent in this expression for a nonparabolic semiconductor leads to values of k close to the experimental values in the range 4 ≤ k ≤ 4.6, which were obtained for samples of the semiconductor alloys with different electron concentrations. A further increase in the magnetic field results in a decrease of the exponent k and in the transition to the inequality σ₂₂(H) ≤ σ₂₁(H).     

Re-evaluation of the LHC potential for the measurement of <Emphasis Type="Italic">m</Emphasis><Subscript><Emphasis Type="Italic">W</Emphasis></Subscript>

We present a study of the LHC sensitivity to the W boson mass based on simulation studies. We find that both experimental and phenomenological sources of systematic uncertainties can be strongly constrained with Z measurements: the lineshape, dσ _Z /dm, is robustly predicted, and its analysis provides an accurate measurement of the detector resolution and absolute scale, while the differential cross-section analysis, d² σ _Z /dydp _T , absorbs the strong interaction uncertainties. A sensitivity δ m _W ∼7 MeV for each decay channel (W→e ν, W→μ ν), and for an integrated luminosity of 10 fb⁻¹, appears as a reasonable goal.     

First-principles study of elastic and vibrational properties of Ni<Subscript>2</Subscript>MnIn magnetic shape memory alloys

We present the results of ab initio calculations of lattice dynamics and the second order elastic stiffness constants of nickel-based magnetic shape memory alloy Ni₂MnIn in stoichiometric composition. The plane wave basis sets and pseudopotential method within spin-polarized generalized gradient approximation (σ-GGA) scheme of the density functional theory (DFT) is applied. Elastic constants are calculated by tetragonal and monoclinic isochoric strains on cubic L2₁ structure. The calculated elastic constants agree very well with the recent ultrasonic experimental data. Phonon dispersion spectra are investigated within linear response technique of the density functional perturbation theory (DFPT). A vibrational anomaly is observed in phonon spectra at the transverse acoustic mode (TA₂) in [ζ ζ0] direction at wavevector ζ = 0.3 as an indication of the structural instability of the system to shear deformation. This anomaly is also verified by the low shear modulus and large elastic anisotropy ratio. Phonon dispersion curves are in excellent agreement with the results of recent neutron diffraction experiments.     

Electronic structure of silicon nitride according to ab initio quantum-chemical calculations and experimental data

Charge transfer ΔQ = 0.35e at the Si-N bond in silicon nitride is determined experimentally using photoelectron spectroscopy, and the ionic formula of silicon nitride Si₃^+1.4N₄^−1.05 is derived. The electronic structure of α-Si₃N₄ is studied ab initio using the density functional method. The results of calculations (partial density of states) are compared with experimental data on X-ray emission spectroscopy of amorphous Si₃N₄. The electronic structure of the valence band of amorphous Si₃N₄ is studied using synchrotron radiation at different excitation energies. The electron and hole effective masses m _e ^* ≈ m _h ^* ≈ 0.5m _e are estimated theoretically. The calculated values correspond to experimental results on injection of electrons and holes into silicon nitride.     

Nonradiative deactivation of the lowest excited triplet state of the dibenzo-<Emphasis Type="Italic">p</Emphasis>-dioxin molecule

In the nonadiabatic approximation, we study how intramolecular interactions affect the nonradiative energy degradation T ₁ ^s ↝ S ₀ of triplet sublevels s of the lowest triplet state of the dibenzo-p-dioxin molecule. We consider the role played in the degradation by the shape of promoting high- and low-frequency vibrational modes and by spin-orbit interactions separately in the carbon backbone of the molecule and in heteroatoms (oxygen). We find that σ-electrons of oxygen that correspond to the lone pair and to valence electrons play different roles in the nonadiabatic interaction.     

Oscillations of the magnetoresistance in an inclined magnetic field for MIS structures on (100) silicon with a high electron density

At electron densities N _S>6×10⁻² cm⁻²² a second series of oscillations, which are tentatively attributed to population of the second energy subband, is observed in addition to the main series of Shubnikov-de Haas oscillations. A change in phase of the oscillations of the second series is observed at some angle of inclination α_e of the field. The measured value of α_e is used to calculate the ratio of the cyclotron mass to the effective g factor. The maximum possible cyclotron mass is also determined as m _H< 0.32m _e. On this basis it is concluded that the second series of oscillations is due to electrons which have an in-plane effective mass m*≈0.2m _e and which belong to the same valleys of the Fermi surface as in the case of the main oscillations. Pis’ma Zh. éksp. Teor. Fiz. 67, No. 2, 136–140 (25 January 1998)     

Role of electronic correlations in the Fermi surface formation of Na<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>CoO<Subscript>2</Subscript>

Band structure of metallic sodium cobaltate Na _x CoO₂ (x = 0.33, 0.48, 0.61, 0.72) has been investigated by local density approximation + Hubbard U (LDA+U) method and within Gutzwiller approximation for the Co-t _2g manifold. Correlation effects being taken into account results in suppression of the e′ _g hole pockets at the Fermi surface in agreement with recent angle-resolved photoemission spectroscopy (ARPES) experiments. In the Gutzwiller approximation the bilayer splitting is significantly reduced due to the correlation effects. The formation of high spin (HS) state in Co d-shell was shown to be very improbable.     

Radiation damages under irradiation of the BCS superconductor MgB<Subscript>2</Subscript> by high-energy electrons

This paper reports on the results of investigations of the influence of irradiation of the two-band BCS superconductor MgB₂ by electrons with an average energy $ \bar {\rm E} $ \bar {\rm E} ∼ 10 MeV at high doses (0 ≤ ϕt ≤ ∼2.5 × 10¹⁸ cm⁻²) on the temperature and width of the transition to the superconducting state, the temperature dependence of the electrical resistivity in the normal state, the crystal lattice parameters, and the diffraction line intensity. An increase in the electron irradiation dose ϕt leads to the following effects: a decrease in the critical temperature T _c ; an increase in the width of the superconducting transition ΔT _c ; and a decrease in the “residual electrical resistivity” ρ_{273 K}/ρ_{40 K}, in the parameters a and c of the hexagonal crystal lattice, and in the ratio between the diffraction line intensities I ₁₁₀/I ₁₀₀. From analyzing the results obtained, it has been established that the main type of radiation damages under irradiation of the BCS superconductor MgB₂ by high-energy electrons is the formation of vacancies in the B sublattice, which leads to a narrowing of the large band gap Δ_σ on the Fermi surface.     

Diffractive production of two ρ<Superscript>0</Superscript><Subscript>L</Subscript> mesons in e<Superscript>+</Superscript>e<Superscript>-</Superscript> collisions

We present an estimate of the cross-section for the exclusive production of a ρ_L ⁰-meson pair in e⁺e^- scattering, which will be studied in the future high-energy International Linear Collider. For this aim, we complete calculations of the Born order approximation of the amplitudes γ^* _L,T(Q₁ ²)γ^* _L,T(Q₂ ²)→ρ_L ⁰ρ_L ⁰, for arbitrary polarization of virtual photons and longitudinally polarized mesons, in the kinematical region s≫-t,Q₁ ²,Q₂ ². These processes are completely calculable in the hard region Q₁ ²,Q₂ ²≫Λ² _QCD, and we perform most of the calculations in an analytical way. The resulting cross-section turns out to be large enough for this process to be measurable with foreseen luminosity and energy, for Q₁ ² and Q₂ ² in the range of a few GeV².     

Strong decays B<Subscript>s0</Subscript>→B<Subscript>s</Subscript>π and B<Subscript>s1</Subscript>→B<Superscript>*</Superscript><Subscript>s</Subscript>π with light-cone QCD sum rules

In this article, we calculate the strong coupling constants g_Bs0Bsη and g_Bs1B*sη with the light-cone QCD sum rules. Then we take into account the small η–π⁰ transition matrix according to Dashen’s theorem, and we obtain the small decay widths for the isospin violation processes B_s0→B_sη→B_sπ⁰ and B_s1→B_s ^*η→B_s ^*π⁰. We can search the strange-bottomed (0⁺,1⁺) mesons B_s0 and B_s1 in the invariant B_sπ⁰ and B^* _sπ⁰ mass distributions, respectively. PACS  12.38.Lg; 13.25.Hw; 14.40.Nd     

Soft X-ray resonant scattering study of single-crystal LaSr<Subscript>2</Subscript>Mn<Subscript>2</Subscript>O<Subscript>7</Subscript>

Soft X-ray resonant scattering studies at the Mn L_{II, III}- and the La M_{IV, V}- edges of single-crystal LaSr₂Mn₂O₇ are reported. At low temperatures, below T_N ≈ 160 K, energy scans with a fixed momentum transfer at the A-type antiferromagnetic (0 0 1) reflection around the Mn L_{II, III}-edges with incident linear σ and π polarizations show strong resonant enhancements. The splitting of the energy spectra around the Mn L_{II, III}-edges may indicate the presence of a mixed valence state, e.g., Mn³⁺/Mn⁴⁺. The relative intensities of the resonance and the clear shoulder-feature as well as the strong incident σ and π polarization dependences strongly indicate its complex electronic origin. Unexpected enhancement of the charge Bragg (0 0 2) reflection at the La M_{IV, V}-edges with σ polarization has been observed up to 300 K, with an anomaly appearing around the orbital-ordering transition temperature, T_OO ≈ 220 K, suggesting a strong coupling (competition) between them.     

Investigation of cross sections for the formation and destruction of negative boron ions

The electron loss and electron capture cross sections σ _i,i+m and σ _i,i−m for boron ions and atoms traveling at the velocities V=1.19 and 1.83 a.u. in H₂, He, N₂, Ne, Ar, and Xe are measured. The known experimental data on these cross sections at velocities near the cross-section maximum are analyzed. It is found that the electron loss cross sections can be described by a formula which was previously derived in the free-collision approximation and takes into account features of both the ions and the ambient atoms. As the nuclear charge Z _t of the ambient atoms increases, the cross sections vary nonmonotonically, increasing on average as Zt _t ^1/2 . A formula based on the model of independent electrons is proposed for electron capture by ions with small values of the charge i. It describes the dependence of the electron capture cross section σ _i,i−1 on the mean binding energy of an electron in an ion with the charge i−1. The total electron capture cross section σ _i,i−1 is proportional to the number of vacancies in the unfilled electron shell nearest the nucleus. The cross sections 0σ _i,i−1 exhibit substantially nonmonotonic variation with Z _t, increasing on average as Z _t ^1/3 . Zh. éksp. Teor. Fiz. 116, 1539–1550 (November 1999)     

A study in depth of f<Subscript>0</Subscript>(1370)

Claims have been made that f₀(1370) does not exist. The five primary sets of data requiring its existence are refitted with suitable Breit–Wigner amplitudes. Major dispersive effects due to the opening of the 4π threshold are included for the first time; the σ→4π amplitude plays a strong role. Crystal Barrel data on p̄p→3π⁰ at rest require f₀(1370) signals of at least 32 and 33 standard deviations (σ) in ¹S₀ and ³P₁ annihilation respectively. Furthermore, they agree within 5 MeV for mass and width. Data on p̄p→ηηπ⁰ agree and require at least a 19σ contribution. This alone is sufficient to demonstrate the existence of f₀(1370). BES II data for J/Ψ→φπ⁺π^- contain a visible f₀(1370) signal >8σ. In all cases, a resonant phase variation is required. Cern–Munich data for ππ elastic scattering are fitted well with the inclusion of some mixing between σ, f₀(1370) and f₀(1500). Values of Γ_2π for f₂(1565), ρ₃(1690), ρ₃(1990) and f₄(2040) are determined. PACS 13.25.Gv; 14.40.Gx; 13.40.Hq     

Ion conduction and space-charge polarization processes in Li<Subscript>2</Subscript>Ge<Subscript>7</Subscript>O<Subscript>15</Subscript> crystals

The electrical properties of a lithium heptagermanate (Li₂Ge₇O₁₅) crystal have been studied in DC and AC measuring fields at temperatures from 500 to 700 K. In a DC field, a substantial decrease of electrical conductivity σ with time has been detected. On the basis of kinetic dependences σ(t), estimates of the charge carrier diffusion coefficient D have been obtained. In the frequency range 10¹–10⁵ Hz, the spectra of complex impedance ρ*(f) have been measured. The analysis of diagrams in the complex plane (ρ″–ρ′) has been performed within the equivalent circuit approach. It has been shown that, in the considered temperature and frequency intervals, the electrical properties of Li₂Ge₇O₁₅ crystals have been determined by the hopping conduction of interstitial lithium ions A _Li and accumulation of charge carriers near the blocking Pt electrodes.     

K*0 and φ meson production in proton–nucleus interactions at ?s=41.6\textGeV\sqrt{s}=41.6\text{GeV}

The inclusive production cross sections of the strange vector mesons K^*0, K̄^*0, and φ have been measured in interactions of 920 GeV protons with C, Ti, and W targets with the HERA-B detector at the HERA storage ring. Differential cross sections as a function of rapidity and transverse momentum have been measured in the central rapidity region and for transverse momenta up to p_T = 3.5 GeV/c. The atomic number dependence is parametrised as σ_pA=σ_pN*A^α, where σ_pN is the proton–nucleon cross section. Within the phase space accessible, α(K^*0)=0.86±0.03, α(K̄^*0)=0.87±0.03, and α(φ)=0.96±0.02. The total proton–nucleon cross sections, determined by extrapolating the differential measurements to full phase space, are σ_pN→K*0=(5.06±0.54) mb, σ_pN→K̄*0=(4.02±0.45) mb, and σ_pN→φ=(1.17±0.11) mb. For all resonances the Cronin effect is observed; compared to the measurements of Cronin et al. for K^± mesons, the measured values of α for φ mesons coincide with those of K⁺ mesons for all transverse momenta, while the enhancement for K^*0/K̄^*0 mesons is smaller.     

Determination of nonlinear σ-ω-ρ model parameters in the relativistic mean-field theory by nuclear-matter properties

The parameters of the σ-ω-ρ model in the relativistic mean-field theory with nonlinear σ-meson self-interaction are determined by nuclear-matter properties, which are taken as those extracted by fits to data based on nonrelativistic nuclear models. The values of the relevant parameters are C _σ ²∼ 94, C _ω ²∼ 32, C _ρ ²∼ 26, b∼ - 0.09, c∼ 1, and the σ-meson mass m _σ∼ 370 MeV, while the value of the calculated nuclear- surface thickness is t∼ 1.4 fm. The field system is shown to be stable, since the σ-meson self-interaction energy is a lower bound in this whole parameter region with positive c. On the other hand, the effective nucleon mass M^* is larger than 0.73M, if the symmetry incompressibility K_s is assumed to be negative and the nuclear-matter incompressibility K₀ is kept less than 300 MeV. Received: 27 June 2001 / Accepted: 5 October 2001