Coexistence of gapless excitations and commensurate charge-density wave in the 2H transition metal dichalcogenides

An unexpected feature common to 2H transition metal dichalcogenides ( 2H TMDs) is revealed with a first-principles Wannier function analysis of the electronic structure of the prototype 2H TaSe2: The low-energy Ta "5d(z2)" bands governing the physics of a charge-density wave (CDW) is dominated by hopping between next-nearest neighbors. With this motivation we develop a minimal effective model for the CDW formation, in which the unusual form of the hopping leads to an approximate decoupling of the three sublattices. In the CDW phase one sublattice remains undistorted, leaving the bands associated with it ungapped everywhere in the Fermi surface, resolving the long-standing puzzle of the coexistence of gapless excitations and commensurate CDW in the 2H TMDs.     

Ambipolar Nernst effect in NbSe2

The first study of the Nernst effect in NbSe2 reveals a large quasiparticle contribution with a magnitude comparable and a sign opposite to the vortex signal. Comparing the effect of the charge density wave (CDW) transition on Hall and Nernst coefficients, we argue that this large Nernst signal originates from the thermally induced counterflow of electrons and holes and indicates a drastic change in the electron scattering rate in the CDW state. The results provide new input for the debate on the origin of the anomalous Nernst signal in high-T(c) cuprates.     

Negative resistance and local charge-density-wave dynamics

Charge-density-wave (CDW) dynamics is studied on a submicron length scale in NbSe(3) and o-TaS(3). Regions of negative absolute resistance are observed in the CDW sliding regime at sufficiently low temperatures. The origin of the negative resistance is attributed to the different forces that the deformed CDW and quasiparticles feel: the force on the CDW is merely caused by a difference of the electric potentials, while the quasiparticle current is governed by a difference of the electrochemical potentials.     

Charge density wave states in phase-engineered monolayer VTe2

Charge density wave (CDW) strongly affects the electronic properties of two-dimensional (2D) materials and can be tuned by phase engineering. Among 2D transitional metal dichalcogenides (TMDs), VTe$_{2}$ was predicted to require small energy for its phase transition and shows unexpected CDW states in its T-phase. However, the CDW state of H-VTe$_{2}$ has been barely reported. Here, we investigate the CDW states in monolayer (ML) H-VTe$_{2}$, induced by phase-engineering from T-phase VTe$_{2}$. The phase transition between T- and H-VTe$_{2}$ is revealed with x-ray photoelectron spectroscopy (XPS) and scanning transmission electron microscopy (STEM) measurements. For H-VTe$_{2}$, scanning tunneling microscope (STM) and low-energy electron diffraction (LEED) results show a robust $2\sqrt 3 \times 2\sqrt 3 $ CDW superlattice with a transition temperature above 450 K. Our findings provide a promising way for manipulating the CDWs in 2D materials and show great potential in its application of nanoelectronics.     

Novel optical and magnetic bistability and photoinduced transition in a one-dimensional halogen-bridged binuclear pt complex

In iodine-bridged binuclear Pt compounds, R(4)[Pt(2)(pop)(4)I]nH(2)O and R(')(2)[Pt(2)(pop)(4)I]nH(2)O (pop=P(2)O5H2-2), electronic structures on the PtPtI chains have been controlled between a diamagnetic charge-density-wave (CDW) state and a paramagnetic charge-polarization (CP) state by modification of the counterions (R, R') located between chains. In the R=(C2H5)2NH+2 compound, a pressure-induced CP to CDW transition with a drastic color change is identified. This transition is accompanied by a large hysteresis loop within which photoinduced transition between CDW and CP can be driven by selecting the excitation photon energy.     

Direct observation of melted Mott state evidenced from Raman scattering in 1T-TaS_2 single crystal

The evolution of electron correlation and charge density wave(CDW)in 1T-TaS_2 single crystal has been investigated by temperature-dependent Raman scattering,which undergoes two obvious peaks of A_(1g) modes about 70.8 cm~(-1) and 78.7 cm~(-1) at 80 K,respectively.The former peak at 70.8 cm~(-1) is accordant with the lower Hubbard band,resulting in the electron-correlation-driven Mott transition.Strikingly,the latter peak at 78.7 cm~(-1) shifts toward low energy with increasing the temperature,demonstrating the occurrence of nearly commensurate CDW phase(melted Mott phase).In this case,phonon transmission could be strongly coupled to commensurate CDW lattice via Coulomb interaction,which likely induces appearance of hexagonal domains suspended in an interdomain phase,composing the melted Mott phase characterized by a shallow electron pocket.Combining electronic structure,atomic structure,transport properties with Raman scattering,these findings provide a novel dimension in understanding the relationship between electronic correlation,charge order,and phonon dynamics.     

Charge-density waves and superlattices in the metallic layered transition metal dichalcogenides

The d1 layer metals TaS 2 , TaSe 2 , NbSe 2 , in all their various polytypic modifications, acquire, below some appropriate temperature, phase conditions that their electromagnetic properties have previously revealed as 'anomalous'. Our present electron-microscopic studies indicate that this anomalous behaviour usually included the adoption, at some stage, of a superlattice. The size of superlattice adopted often is forecast in the pattern of satellite spotting and strong diffuse scattering found above the transition. Our conclusions are that charge-density waves and their concomitant periodic structural distortions occur in all these 4d 1 /5d 1 dichalcogenides. We have related the observed periodicities of these CDW states to the theoretical form of the parent Fermi surfaces. Particularly for the 1T octahedrally coordinated polytypes the Fermi surface is very simple and markedly two-dimensional in character, with large near-parallel walls. Such a situation is known theoretically to favour the formation of charge and spin-density waves. When they first appear, the CDWs in the 1T (and 4Hb) polytypes are incommensurate with the lattice. This condition produes a fair amount of gapping in the density of states at the Fermi level. For the simplest case of 1T-TaSe 2 , the room temperature superlattice is realized when this existing CDW rotates into an orientation for which it then become commensurate. At this first-order transition the Fermi surface energy gapping increases beyond that generated by the incommensurate CDW, as is clearly evident in the electromagnetic properties. For the trigonal prismatically coordinated polytypes, CDW formation is withheld to low temperatures, probably because of the more complex band structures. This CDW state (in the cases measured) would seem at once commensurate, even though the transition is, from a wide variety of experiments, apparently second order. A wide range of doped and intercalated materials have been used to substantiate the presence of CDWs in these compounds, and to clarify the effect that their occurrence has on the physical properties. The observations further demonstrate the distinctiveness of the transition metal dichalcogenide layer compounds, and of the group VA metals in particular.     

Observation of multiple charge density wave phases in epitaxial monolayer 1T-VSe2 film

As a special order of electronic correlation induced by spatial modulation, the charge density wave (CDW) phenomena in condensed matters attract enormous research interests. Here, using scanning—tunneling microscopy in various temperatures, we discover a hidden incommensurate stripe-like CDW order besides the ($sqrt{7}$ × $sqrt{3}$) CDW phase at low-temperature of 4 K in the epitaxial monolayer 1T-VSe₂} film. Combining the variable-temperature angle-resolved photoemission spectroscopic (ARPES) measurements, we discover a two-step transition of an anisotropic CDW gap structure that consists of two parts Δ₁ and Δ₂. The gap part Δ₁ that closes around ～ 150 K is accompanied with the vanish of the ($sqrt{7}$ × $sqrt{3}$) CDW phase. While another momentum-dependent gap part Δ₂ can survive up to ～ 340 K, and is suggested to the result of the incommensurate CDW phase. This two-step transition with anisotropic gap opening and the resulted evolution in ARPES spectra are corroborated by our theoretical calculation based on a phenomenological form for the self-energy containing a two-gap structure Δ₁ + Δ₂, which suggests different forming mechanisms between the ($sqrt{7}$ × $sqrt{3}$) and the incommensurate CDW phases. Our findings provide significant information and deep understandings on the CDW phases in monolayer 1T-VSe₂} film as a two-dimensional (2D) material.     

Observation of correlations up to the micrometer scale in sliding charge-density waves

A high resolution coherent x-ray diffraction experiment has been performed on the charge-density wave (CDW) system K0.3MoO3. The 2kF satellite reflection associated with the CDW has been measured with respect to external dc currents. In the sliding regime, the 2kF satellite reflection displays secondary satellites along the chain axis which corresponds to correlations up to the micrometer scale. This super long-range order is 1500 times larger than the CDW period itself. This new type of electronic correlation seems inherent to the collective dynamics of electrons in charge-density wave systems. Several scenarios are discussed.     

Electronic structure and charge-density wave transition in monolayer VS2

Vanadium disulfide (VS₂) attracts elevated interests for its charge-density wave (CDW) phase transition, ferromagnetism, and catalytic reactivity, but the electronic structure of monolayer has not been well understood yet. Here we report synthesis of epitaxial 1T VS₂ monolayer on bilayer graphene grown by molecular-beam epitaxy (MBE). Angle-resolved photoemission spectroscopy (ARPES) measurements reveal that Fermi surface with six elliptical pockets centered at the M points shows gap opening at low temperature. Temperature-dependence of the gap size suggests existence of CDW phase transition above room temperature. Our observations provide important evidence to understand the strongly correlated electron physics and the related surface catalytic properties in two-dimensional transition-metal dichalcogenides (TMDCs).     

Quasiparticle effects on tunneling currents: a study of C2H4 adsorbed on the Si(001)- (2 x 1) surface

We present a first-principles calculation of the quasiparticle electronic structure of ethylene adsorbed on the dimer reconstructed Si(001)-(2x1) surface. Within the GW approximation, the self-energy corrections for the adsorbate states are found to be about 1.5 eV larger than those for the states derived from bulk silicon. The calculated quasiparticle band structure is in excellent agreement with photoemission spectra. Finally, the effects of the quasiparticle corrections on the scanning tunneling microscope images of the adsorbed molecules are shown to be important as the lowering of the C2H4 energy levels within GW strongly reduces their tunneling probability.     

Phason and amplitudon in the charge-density-wave phase of one-dimensional charge stripes in La(2-x)Sr(x)CuO4

The present systematic Raman scattering experiments reveal the phason and amplitudon of the charge density wave (CDW) mode in the charge stripes of La(2-x)Sr(x)CuO4. Only about 15% of the electronic density of states condenses into the CDW state. The symmetries of the CDW modes change by the rotation of the stripes at the insulator-metal transition. The energy of the phason is finite at 0.06 < or = x < or = 0.1 and zero at x = 0.035 and 0.115 < or = x < or = 0.135, which suggests that the CDW is commensurate at 0.06 < or = x < or = 0.1 and incommensurate otherwise. The zero-energy phason seems to reduce T(c) at x = 1/8.     

Landau quantization effects in the charge-density-wave system (Per)2M(mnt)2 (where M = Au and Pt)

A finite transfer integral t(a) orthogonal to the conducting chains of a highly one-dimensional metal gives rise to empty and filled bands that simulate an indirect-gap semiconductor upon formation of a charge-density wave (CDW). In contrast to semiconductors such as Ge and Si with band gaps approximately 1 eV, the CDW system possesses an indirect gap with a greatly reduced energy scale, enabling moderate laboratory magnetic fields to have a major effect. The consequent variation of the thermodynamic gap with magnetic field due to Zeeman splitting and Landau quantization enables the electronic band structure parameters (transfer integrals, Fermi velocity) to be determined accurately. These parameters reveal the orbital quantization limit to be reached at approximately 20 T in (Per)2M(mnt)(2) salts, making them highly unlikely candidates for a recently proposed cascade of field-induced CDW states.     

Structural and electrical transport properties of charge density wave material LaAgSb_2 under high pressure

Layered lanthanum silver antimonide LaAgSb_2 exhibits both charge density wave(CDW) order and Dirac-cone-like band structure at ambient pressure.Here,we systematically investigate the pressure evolution of structural and electronic properties of LaAgSb_2 single crystal.We show that the CDW order is destabilized under compression,as evidenced by the gradual suppression of magnetoresistance.At P_C～22 GPa,synchrotron x-ray diffraction and Raman scattering measurements reveal a structural modification at room-temperature.Meanwhile,the sign change of the Hall coefficient is observed at 5 K.Our results demonstrate the tunability of CDW order in the pressurized LaAgSb_2 single crystal,which can be helpful for its potential applications in the next-generation devices.     

Electronic structure and anomalous photoemission line-shape of quasi-2D oxide η-Mo4O11

The η-Mo₄O₁₁ compound is a layered two-dimensional (2D) metallic system whose reduced dimensionality originates non-linear properties as charge density wave (CDW) instabilities. We report on synchrotron radiation angle resolved photoemission spectroscopy (ARPES) measurements in order to obtain a detailed picture of the electronic structure of this material. The symmetry of the states near the Fermi level (E_F) has been discussed in relation to the photoemission symmetry selections rules. Our results are in excellent agreement with previous tight-binding calculations and support the hidden nesting concept proposed to explain the CDW instabilities exhibited by this family of compounds. In addition, a very peculiar photoemission line-shape has been found with the presence of localized non-dispersive states. Some possible explanations are discussed.     

Magnetoresistance in Quasi-One-Dimensional Weyl Semimetal (TaSe4)2I

JETP Letters - Magnetic field effect on linear and nonlinear conductivity in a quasi-one-dimensional Weyl semimetal with a charge density wave (TaSe4)2I is studied. Longitudinal magnetoresistance...     

Coincidence of checkerboard charge order and antinodal state decoherence in strongly underdoped superconducting Bi2Sr2CaCu2O8 + delta)

The doping dependence of nanoscale electronic structure in superconducting Bi(2)Sr(2)CaCu(2)O(8 + delta) is studied by scanning tunneling microscopy. At all dopings, the low energy density-of-states modulations are analyzed according to a simple model of quasiparticle interference and found to be consistent with Fermi-arc superconductivity. The superconducting coherence peaks, ubiquitous in near-optimal tunneling spectra, are destroyed with strong underdoping and a new spectral type appears. Exclusively in regions exhibiting this new spectrum, we find local "checkerboard" charge ordering of high energy states, with a wave vector of Q = (+/- 2pi/4.5a(0),0); (0, +/- 2pi/4.5a(0)) +/- 15%. Surprisingly, this spatial ordering of high energy states coexists harmoniously with the low energy Bogoliubov quasiparticle states.     

Novel mechanism of a charge density wave in a transition metal dichalcogenide

The charge density wave (CDW) is usually associated with Fermi surfaces nesting. We here report a new CDW mechanism discovered in a 2H-structured transition metal dichalcogenide, where the two essential ingredients of the CDW are realized in very anomalous ways due to the strong-coupling nature of the electronic structure. Namely, the CDW gap is only partially open, and charge density wave vector match is fulfilled through participation of states of the large Fermi patch, while the straight Fermi surface sections have secondary or negligible contributions.