The increase of the spin-transfer torque threshold current density in coupled vortex domain walls

We have studied the dependence on the domain wall structure of the spin-transfer torque current density threshold for the onset of wall motion in curved, Gd-doped Ni(80)Fe(20) nanowires with no artificial pinning potentials. For single vortex domain walls, for both 10% and 1% Gd-doping concentrations, the threshold current density is inversely proportional to the wire width and significantly lower compared to the threshold current density measured for transverse domain walls. On the other hand for high Gd concentrations and large wire widths, double vortex domain walls are formed which require an increase in the threshold current density compared to single vortex domain walls at the same wire width. We suggest that this is due to the coupling of the vortex cores, which are of opposite chirality, and hence will be acted on by opposing forces arising through the spin-transfer torque effect.     

Domain wall dynamics driven by spin transfer torque and the spin-orbit field

We have studied current-driven dynamics of domain walls when an in-plane magnetic field is present in perpendicularly magnetized nanowires using an analytical model and micromagnetic simulations. We model an experimentally studied system, ultrathin magnetic nanowires with perpendicular anisotropy, where an effective in-plane magnetic field is developed when current is passed along the nanowire due to the Rashba-like spin-orbit coupling. Using a one-dimensional model of a domain wall together with micromagnetic simulations, we show that the existence of such in-plane magnetic fields can either lower or raise the threshold current needed to cause domain wall motion. In the presence of the in-plane field, the threshold current differs for positive and negative currents for a given wall chirality, and the wall motion becomes sensitive to out-of-plane magnetic fields. We show that large non-adiabatic spin torque can counteract the effect of the in-plane field.     

Current driven domain wall velocities exceeding the spin angular momentum transfer rate in permalloy nanowires

The velocity of domain walls driven by current in zero magnetic field is measured in permalloy nanowires using real-time resistance measurements. The domain wall velocity increases with increasing current density, reaching a maximum velocity of approximately 110 m/s when the current density in the nanowire reaches approximately 1.5 x 10(8) A/cm(2). Such high current driven domain wall velocities exceed the estimated rate at which spin angular momentum is transferred to the domain wall from the flow of spin polarized conduction electrons, suggesting that other driving mechanisms, such as linear momentum transfer, need to be taken into account.     

Current-induced domain wall motion in magnetic nanowires with spatial variation

We model current-induced domain wall motion in magnetic nanowires with the variable width. Employing the collective coordinate method we trace the wall dynamics. The effect of the width modulation is implemented by spatial dependence of an effective magnetic field. The wall destination in the potential energy landscape due to the magnetic anisotropy and the spatial nonuniformity is obtained as a function of the current density. For a nanowire of a periodically modulated width, we identify three (pinned, nonlinear, and linear) current density regimes for current-induced wall motion. The threshold current densities depend on the pulse duration as well as the magnitude of wire modulation. In the nonlinear regime, application of ns order current pulses results in wall displacement which opposes or exceeds the prediction of the spin transfer mechanism. The finding explains stochastic nature of the domain wall displacement observed in recent experiments.     

Influence of current on field-driven domain wall motion in permalloy nanowires from time resolved measurements of anisotropic magnetoresistance

The motion of magnetic domain walls in permalloy nanowires is investigated by real-time resistance measurements. The domain wall velocity is measured as a function of the magnetic field in the presence of a current flowing through the nanowire. We show that the current can significantly increase or decrease the domain wall velocity, depending on its direction. These results are understood within a one-dimensional model of the domain wall dynamics which includes the spin transfer torque.     

Metallic normal state of Y1Ba2Cu3O(7-delta)

Flux flow was studied over an entire temperature range down to T approximately 2% of T(c) by using intense pulsed current densities to overcome flux-vortex pinning. The resistivity at high vortex velocities is proportional to B and roughly follows rho approximately rho(n)B/H(c2), with a prefactor of order unity. Contrary to some speculation, rho(n) saturates to a finite residual value as T-->0, indicating a metallic (rho-->finite) rather than insulating (rho-->infinity) normal state, and the vortex dissipation continues to be conventional as T-->0.     

Domain wall resistance in perpendicular (Ga,Mn)As: Dependence on pinning

We have investigated the domain wall resistance for two types of domain walls in a (Ga,Mn)As Hall bar with perpendicular magnetization. A sizeable positive intrinsic DWR is inferred for domain walls that are pinned at an etching step, which is quite consistent with earlier observations. However, much lower intrinsic domain wall resistance is obtained when domain walls are formed by pinning lines in unetched material. This indicates that the spin transport across a domain wall is strongly influenced by the nature of the pinning.     

Current induced domain wall motion in GaMnAs close to the Curie temperature

Domain wall dynamics produced by spin transfer torques is investigated in (Ga, Mn)As ferromagnetic semiconducting tracks with perpendicular anisotropy, close to the Curie temperature. The domain wall velocities are found to follow a linear flow regime which only slightly varies with temperature. Using the D?ring inequality, boundaries of the spin polarization of the current are deduced. A comparison with the predictions of the mean field k·p theory leads to an estimation of the carrier density whose value is compatible with results published in the literature. The spin polarization of the current and the magnetization of the magnetic atoms present similar temperature variations. This leads to a weak temperature dependence of the spin drift velocity and thus of the domain wall velocity. A combined study of field- and current-driven motion and deformation of magnetic domains reveals a motion of domain walls in the steady state regime without transition to the precessional regime. The ratio between the non-adiabatic torque β and the Gilbert damping factor α is shown to remain close to unity.     

Magnetic domain wall pinning and coercivity in FePt/MgO and FePt/Pt thin films

FePt thin layers have been epitaxied either on Pt(0 0 1) or on MgO(0 0 1) substrates, and magnetically characterized using extraordinary Hall effect magnetometry and magnetic force microscopy. The coercivity originates in both cases from the pinning of domain walls on structural defects. Whereas the coercivity increases with the FePt layer thickness in FePt/Pt samples, it decreases in FePt/MgO samples. This discrepancy is explained on the basis of structural observations, and of atomistic simulations of magnetic domain wall pinning.     

Spin torque transfer structure with new spin switching configurations

Spin torque transfer structures with new spin switching configurations are proposed, fabricated and investigated in this paper. The non-uniform current-induced magnetization switching is implemented based on both GMR and MTJ nano devices. The proposed new spin transfer structure has a hybrid free layer that consists of a layer with conductive channels (magnetic) and non-conductive matrix (non-magnetic) and traditional free layer(s). Two mechanisms, a higher local current density by nano-current-channels and a non-uniform magnetization switching (reversal domain nucleation and growth) by a magnetic nanocomposite structure, contribute in reducing the switching current density. The critical switching current density for the new spin transfer structure is reduced to one third of the typical value for the normal structure. It can be expected to have one order of magnitude or more reduction for the critical current density if the optimization of materials and fabrication processes could be done further. Meanwhile, the thermal stability of this new spin transfer structure is not degraded, which may solve the long-standing scaling problem for magnetic random access memory (MRAM). This spin transfer structure, with the proposed and demonstrated new spin switching configurations, not only provides a solid approach for the practical application of spin transfer devices but also forms a unique platform for researchers to explore the non-uniform current-induced switching process.     

Controlled and reproducible domain wall displacement by current pulses injected into ferromagnetic ring structures

In a combined numerical and experimental study, we demonstrate that current pulses of different polarity can reversibly and controllably displace a magnetic domain wall (DW) in submicrometer permalloy (NiFe) ring structures. The critical current densities for DW displacement are correlated with the specific spin structure of the DWs and are compared to results of micromagnetic simulations including a spin-torque term. Using a notch, an attractive local pinning potential is created for the DW resulting in a highly reproducible spin structure of the DW, critical for reliable current-induced switching.     

Magnetization process of single molecule magnets at low temperatures

We show that correlations established before quenching to very low temperatures later drive the magnetization process of systems of single molecule magnets, after a magnetic field is applied at t=0. We also show that in simple cubic lattices m proportional, variant sqrt[t], as observed in Fe8, but only for 1+2log((10)(h(d)/h(w)) time decades, where h(d) is a nearest neighbor dipolar magnetic field and a spin reversal can occur only if the field on it is within (-h(w),h(w)). However, the sqrt[t] behavior is not universal. For bcc and fcc lattices, m proportional, variant t(p), but p approximately 0.7. The value to which m finally levels off is also given.     

Quantum mechanisms of density wave transport

We report on new developments in the quantum picture of correlated electron transport in charge and spin density waves. The model treats the condensate as a quantum fluid in which charge soliton domain wall pairs nucleate above a Coulomb blockade threshold field. We employ a time-correlated soliton tunneling model, analogous to the theory of time-correlated single electron tunneling, to interpret the voltage oscillations and nonlinear current-voltage characteristics above threshold. An inverse scaling relationship between threshold field and dielectric response, originally proposed by Grüner, emerges naturally from the model. Flat dielectric and other ac responses below threshold in NbSe₃ and TaS₃, as well as small density wave phase displacements, indicate that the measured threshold is often much smaller than the classical depinning field. In some materials, the existence of two distinct threshold fields suggests that both soliton nucleation and classical depinning may occur. In our model, the ratio of electrostatic charging to pinning energy helps determine whether soliton nucleation or classical depinning dominates.     

Superlattices with coupled channels and transfer matrices

We study analytically threshold and resonance effects in superlattices using the well-known transfer matrix technique. For this analysis we take advantage of a new parametrization of the scattering amplitudes. In particular, threshold effects, analogous to the so-called “Wigner cusps” of nuclear reactions, follow when a channel is opened for non-zero coupling. Sharp resonances of Lorenzian shape are also found only in the presence of coupling. It could be very interesting to look for experimental evidences of these effects. We expect that this approach allows to study systems with spin and under external magnetic fields.     

Nanometer scale observation of high efficiency thermally assisted current-driven domain wall depinning

Nanometer scale observation of the depinning of a narrow domain wall (DW) under a spin current is reported. We studied approximately 12 nm wide 1D Bloch DWs created in thin films exhibiting perpendicular magnetic anisotropy. Magnetotransport measurements reveal thermally assisted current-driven DW motion between pinning sites separated by as little as 20 nm. The efficiency of current-driven DW motion assisted by thermal fluctuations is measured to be orders of magnitude higher than has been found for in-plane magnetized films, allowing us to control DW motion on a nanometer scale at low current densities.     

Domain wall motion in nanowires

We investigated the motion of domain walls in ferromagnetic cylindrical nanowires by solving the Landau–Lifshitz–Gilbert equation numerically for a classical spin model in which energy contributions from exchange, crystalline anisotropy, dipole–dipole interactions, and a driving magnetic field are considered. Depending on the diameter, either transverse domain walls or vortex walls are found. A transverse domain wall is observed for diameters smaller than the exchange length of the given system. In this case, the system effectively behaves one dimensionally and the domain wall velocity agrees with the result of Slonczewski for one-dimensional walls. For larger diameters, a crossover to a vortex wall sets in which enhances the domain wall velocity drastically. For a vortex wall the domain wall velocity is described by the Walker formula.     

The mobility of domain walls in magnetic films

The character of the dependence of domain wall velocityv on magnetic field intensityH varies with film thickness. Possible causes of the nonlinearity ofv(H) in films of some thickness are discussed. It has been shown how the mobility of domain walls varies over a wide range of thicknesses, from ultrathin films to bulk layers. The mobility measured for films up to 500 thick is consistent with the spin damping theory. For thicknesses greater than 1 the experimental data agree well with the eddy current damping theory. The mobility in thinner films is considerably lower than predicted by this theory. It greatly depends on the domain wall structure, magnetic ripple in domains as well as on the structural defects retarding the wall.     

Spin transfer in magnetic tunnel junctions with hot electrons

Recent data on the bias dependence of the spin transfer effect in magnetic tunnel junctions have shown that torque remains intact at bias voltages for which the tunneling magnetoresistance has been strongly reduced. We show that the current induced excitations due to hot electrons, while reducing the magnetoresistance, enhance both the charge current and the spin transfer in magnetic tunnel junctions in such a manner that the ratio of the torque to the charge current does not significantly change.