透射式GaAs光电阴极的X射线衍射研究

本文介绍了高精度多晶多反射X射线衍射仪的一种新的应用.首次将其应用于研究高灵敏度第三代微光象增强器中由掺Zn的p型GaAs/GaAlAs、玻璃组成的光电阴极的材料特性；发展了用倒格子空间衍射图方法评价光电阴级组件晶体质量的方法.通过分析得知,衍射强度在倒格子空间沿。方向展宽主要起因于晶体中的嵌镶效应的增强.文中采用衍射动力学理论的计算方法并忽略初始条件,模拟后得到的曲线与衍射强度沿ω/θ方向的投影强度曲线符合的比较好.粘接良好的阴极样品表明,GaAs/GaAlAs晶格常数的变化基本上可以消除,但粘接引起的嵌镶效应的增强却不能完全消除.     

Compaction of poly(dimethylsiloxane) (PDMS) due to proton beam irradiation

This work is about the detailed investigation of the changes of the surface topography, the degree of compaction/shrinkage and its relation to the irradiation fluence and the structure spacing in poly(dimethylsiloxane) (PDMS) patterned with 2 MeV proton microbeam. The irradiated periodic structures consisted of parallel lines with different widths and spacing. To achieve different degrees of compaction, each structure was irradiated with more different fluences. At the irradiated areas the surface topography, the adhesion, the wettability and the rigidity of the surface also changes due to the chemical/structural change of the basic poly(dimethylsiloxane) polymer. The surface topography, the phase modification of the surface, and the connection between them was revealed with using an atomic force microscope (AFM).     

水平变化波导中的简正波耦合与能量转移

针对海底地形水平变化对声场能量传播和声场干涉结构的影响,对简正波之间的耦合和能量转移进行了研究.建立了一种二维大步长格式的耦合简正波模型和三维楔形波导耦合简正波模型,以便快速有效地分析简正波之间的耦合和能量转移.基于耦合简正波模型,阐述了前向声场能量在水平变化波导中传播时的转移过程.并根据射线简正波理论,解释了海底地形变化对声场能量分布的影响机理.水平变化波导中声场的仿真计算表明,当本征值虚部发生剧烈变化时声场存在着较强的简正波耦合和能量转移,且海底地形变化将导致声场能量的水平传播方向偏转至海水深度增加的方向.在声场能量转移和传播方向变化中,声场的能量趋于保留在波导中而不向海底泄漏.同时,声场能量分布受到类似于压缩或稀疏的作用,从而形成椭圆状的干涉结构.     

Laser induced microrelief superstructure of Ag/ITO seed-mediated nanocomposites

The topography of indium tin oxide (ITO) films with incorporated silver nanoparticles and irradiated by single pulses of 18 ns Nd:YAG laser has been investigated. The study was carried out with two Ag/ITO films having resistances of 50 Ω/ITO sheet and 4 Ω/ITO sheet. The periodic structures in both samples were created after the laser treatment. The photo-induced periodic structures have a different character while the sheet resistance plays a major role in the growth process of these structures. The results of optical and non-linear optical investigations lead us to the conclusion that the temporary polarization of samples during laser treatment is responsible for the shape of periodic structures.     

Scanning tunneling microscopy investigation of CoO/Fe(001) and Fe/CoO/Fe(001) layered structures

We report on the nanometer scale morphology of CoO thin films grown on top of Fe(001) substrates from the early stages of interface formation (few atomic layers), and on the surface topography of Fe/CoO/Fe(001) layered structures. The growth of the CoO films is dominated by formation of islands up to about 5 nominal atomic layers, then it proceeds in the layer-plus-island regime. The surface topography of thin Fe films grown on top of the CoO/Fe systems is strongly influenced by the morphology of the latter. Moreover, we observe a strong relationship between the growth mode and the chemical interactions at the CoO/Fe interface, since thick layers of iron oxides develop only below the CoO islands, as an effect of the proximity between Fe and Co atoms. We finally discuss possible implications of our observations on the magnetic properties of these layered magnetic structures.     

Influence of surface topography on the secondary electron yield of clean copper samples

Secondary electron yield (SEY) due to electron impact depends strongly on surface topography. The SEY of copper samples after Ar-ion bombardment is measured in situ in a multifunctional ultrahigh vacuum system. Increasing the ion energy or duration of ion bombardment can even enlarge the SEY, though it is relatively low under moderate bombardment intensity. The results obtained with scanning electron microscopy and atomic force microscopy images demonstrate that many valley structures of original sample surfaces can be smoothed due to ion bombardment, but more hill structures are generated with stronger bombardment intensity. With increasing the surface roughness in the observed range, the maximum SEY decreases from 1.2 to 1.07 at a surface characterized by valleys, while it again increases to 1.33 at a surface spread with hills. This phenomenon indicates that hill and valley structures are respectively effective in increasing and decreasing the SEY. These obtained results thus provide a comprehensive insight into the surface topography influence on the secondary electron emission characteristics in scanning electron microscopy.     

原子力与光子扫描隧道组合显微镜

介绍了超高分辨光于扫描隧遭显微镜（PSTM）的计冗历程,为解决第一代（单光束照明）光千扫捕隧逼显傲镜中存在人为假象和样品光学图像与形貌图像难于分离两个难题,用“对称双光束照明方法消假象,用原子力与光子扫描隧道组合显微镜（AF／PSTM）图像分解方法分离样品光学透过率、折射率与形貌图像。研制成功新一代原子力与光子扫描隧道组合显微镜（AF／PSTM）样机。该样机在一次扫描中已获得两幅原子力显微镜图像（形貌与相位）和两幅光学图像（透过率和折射率）,有效地减少了假象,分解了样品光学折射率、透过率与形貌图像。     

金属规则表面形貌影响二次电子产额的解析模型

表面形貌是影响二次电子发射特性的重要因素, 但目前仍缺乏刻画这一影响规律的解析模型. 本文通过分析发现表面结构的遮挡作用是影响二次电子发射特性的主要因素. 基于二次电子以余弦角分布出射的规律, 提出了建立表面形貌参数与二次电子产额之间定量关系的方法, 并以矩形槽和三角槽为例, 建立了电子正入射和斜入射时的一代二次电子产额的解析模型. 将推导的解析模型与Monte Carlo模拟结果和实验结果进行了比较, 结果表明本文建立的模型能够正确反映规则表面形貌的二次电子产额. 本文的模型对于反映常用规则结构影响二次电子出射的规律以及指导通过表面结构调控二次电子发射特性都具有参考价值.     

Initial attachment and spreading of MG63 cells on nanopatterned titanium surfaces via through-mask anodization

It is well established that nanosized surface topography significantly affects cell response at a biomaterial surface. Here we used a through-mask anodization technique to fabricate well-defined titania nanopillars with tunable feature sizes from 15 to 100 nm on bulk titanium (Ti) substrates and studied their effects on initial attachment and spreading of osteoblast-like cells (MG63). An increase of titania pillar height from 15 to 100 nm resulted in reduced spreading of MG63 osteoblast-like cells and the higher pillar structures also gave rise to heavily elongated cells. By using a FIB/SEM dual beam microscope the interface between MG63 cells and nanopatterned Ti surfaces could be studied in more detail. It was found that the higher pillar structures prevented the cells to conform to the surface topography leaving voids in between the cells and the substrates. The results found in this study agree with previous studies that cells response better to surfaces with smaller (<20 nm) features.     

表面形貌对热阴极电子发射特性的影响

为了研究热阴极表面形貌对电子发射能力的影响,使用飞秒激光微纳加工技术在光滑的热阴极表面制备不同尺寸和形状的周期性条纹结构,并使用相同的制备工艺对阴极进行除气和激活.测试结果显示:阴极表面周期性条纹结构可有效增强阴极的电子发射能力,正交双向条纹结构表面阴极的发射电流密度高于单向条纹结构表面阴极的发射电流密度,而且随条纹结构尺寸的降低,阴极的电子发射能力逐渐增强.对阴极表面形貌进行仿真,发现微尖顶端位置在强电场的作用下具有较强的电子发射能力.当阴极表面微尖底部直径与高度比值(r/h)较小时,微尖的侧面仍是阴极电子发射的主要区域,但是随着r/h减小,阴极的电子发射区域逐渐由微尖侧面发射向微尖顶端转移,场助电子发射效应成为阴极电子发射的主要组成部分.     

Electric field dependence of topography in ferroelectric P(VDF/TrFE) films

The effect of electric fields on the topography and structures in P(VDF/TrFE) ferroelectric films was studied. The morphological changes after poling treatment at 25 °C, from previously chrysanthemum-like structures to regular and parallel slug-like domains, were observed by scanning probe microscope. Poling process at higher temperature induced even greater morphological changes. Imaging of local electrical properties showed that these changes could not be attributed to the influence of local charges injected into film surface during poling process. It was believed that this new morphology came from the reform of film structures induced by electric fields.     

Engineering of nearly strain-free ZnO films on Si(1 1 1) by tuning AlN buffer thickness

ZnO properties were investigated as a function of AlN buffer layer thickness (0–100 nm) in ZnO/AlN/Si(1 1 1) structures grown by metal organic vapor phase epitaxy. A significant improvement of ZnO film crystallinity by tuning AlN buffer thickness was confirmed by x-ray diffraction, topography and photoluminescence measurements. An optimal AlN buffer layer thickness of 50 nm is defined, which allows for growth of nearly strain-free ZnO films. The presence of free excitons at 10 K suggests high crystal quality for all ZnO samples grown on AlN/Si(1 1 1) templates. The intensities of neutral and ionized donor bound exciton lines are found to correlate with the in-plane and out-of-plane strain in the films, respectively.     

用x射线形貌研究半绝缘砷化镓单晶胞状结构

通过x射线异常透射形貌（XRT），化学腐蚀显微观察和电子显微技术（TEM）研究了液封直拉（LEC）法生长的半绝缘砷化镓（SI-GaAs）单晶中蜂窝状胞状结构，从晶体生长和冷却过程的热应力、弹性形变引起位错的运动和反应考虑，分析了该结构的形成机理与过程.认为这是由高密度位错（EPD）运动和反应所形成的小角度晶界的集合群. 关键词： SI-GaAs 小角度晶界 胞状结构     

层结流体中在热外源和β效应地形效应作用下的非线性Rossby孤立波和非齐次Schrödinger方程

在层结流体中, 从带有地形、热外源耗散的下边界条件以及带有热外源的准地转位涡方程开始, 使用小参数展开方法和多尺度时空伸长变换推导出了具有热外源、β效应和地形效应的强迫Rossby孤立波方程, 得到孤立Rossby振幅满足的带有地形与热外源的非齐次非线性的Schrödinger方程. 通过分析Rossby孤立波振幅的变化, 指出了热外源、β效应和地形效应都是诱导Rossby孤立波产生的重要因素, 给出了切变基本流下地形、热外源和层结流体中Rossby的相互作用.     

X-ray topographic imaging of (Al, Ga)N/GaN based electronic device structures on SiC

Structural defects and their impact on the performance, lifetime and reliability of electronic devices are of permanent interest for crystal growers and device manufacturers. This is especially true for epitaxial (Al, Ga)N/GaN based high electron mobility transistor (HEMT) structures on 4H-SiC (0 0 0 1) substrates. This work points out how micropipes, dislocations and grain boundaries present in a 4H-SiC (0 0 0 1) wafer and subsequently overgrown with an (Al, Ga)N-GaN-HEMT layer sequence show up in X-ray topographic images and two-dimensional XRD maps. Using X-ray topography in transmission geometry, micropipes and other structural defects are localized non-destructively below structured metallization layers with a spatial resolution of a few tens of micrometers.     

Characterization of post-copper CMP surfaces with scanning probe microscopy: Part 1: Surface leakage measurement with conductive atomic force microscopy

We demonstrate in this paper for the first time the use of conductive atomic force microscopy (AFM) to measure surface leakage between copper structures with varying line width and spacing in the micro and sub micrometer ranges. Conducting atomic force microscopy allows subsequent measurement of the topography as well as the electrical properties of surfaces. The feasibility and interest of these measurements will be shown by studying the impact of chemical mechanical polishing (CMP) of an electrical interface bearing different micrometric copper structures. As expected the polishing time has a crucial impact on the current determined between closely spaced copper structures. This paper will also deal with issues observed during the measurement.     

局地强迫激发的非线性长波扰动

利用扰动法导得了非线性强迫Boussinesq方程,利用数值解讨论了地形和外源等局地强迫激发的非线性长波扰动的一般性状和时间演变特征,并对移动性孤波与地形的相互作用进行了分析研究。     

FM-AFM imaging of a commercial polyethylene film immersed in n-dodecane

The subnanometer topography of a partially crystalline polyethylene film was observed in liquid n-dodecane using a frequency-modulation atomic force microscope. Locally ordered structures were found and assigned to a (100) facet of crystalline domains.     

Evidence of subsurface oxygen vacancy ordering on reduced CeO2(111)

Surface and subsurface oxygen vacancies on the slightly reduced CeO(2)(111) surface have been studied by atomic resolution dynamic force microscopy at 80 K. Both types of defect are clearly identified by the comparison of the observed topographic features with the corresponding structures predicted from recent first-principles calculations. By combining two simultaneously acquired signals (the topography and the energy dissipated from the cantilever oscillation), we are able to unambiguously locate subsurface oxygen vacancies buried at the third surface atomic layer. We report evidence of local ordering of these subsurface defects that suggests the existence of a delicate balance between subtle interactions among adjacent subsurface oxygen vacancy structures.     

Surface topography of laser annealed silicon

The topography of silicon has been studied by Nomarski and scanning electron microscopy and by light diffraction techniques. In addition to the previously known ripple structure with wavelength perpendicular to the laser E vector, two new ripple structures of other orientations have been found. The heights of the structures have been determined for the first time.