Ballistic phonon transport through a Fibonacci array of acoustic nanocavities in a narrow constriction

We investigate the ballistic phonon transport through a Fibonacci array of acoustic nanocavities in a narrow constriction of a semiconductor nanowire at low temperatures. It is found that the transmission spectrum of such a system consists of quasiband gaps and narrow resonances caused by the coupling of phonon waves. Both phonon transmission and thermal conductance exhibit the similarity due to the Fibonacci sequence structure. The similarity is sensitive to the number n and parameters of nanocavities. The results are compared with those in a periodic acoustic nanocavities.     

Ballistic transport in quantum cylinders

We theoretically investigate the ballistic conductance of hollow quantum wires made of a two-dimensional electron gas occupying a cylindrical surface. The dependence of the conductance on the electron Fermi momentum differs drastically from the conventional case of a strip-like wire. We trace the evolution between these two cases in an exactly solvable model of a circular cylinder affected by a δ-like potential barrier along its element. We consider also a cylinder with two diametrically opposite δ-function barriers, the case representing somewhat realistic semiconductor structures. The general consequences of the boundary condition topology are also discussed.     

Ballistic transport in PbTe-based nanostructures

We describe our study of ballistic transport in nanostructures of lead telluride, PbTe. Submicron devices have been fabricated by electron beam lithography and chemical etching of 50 nm wide PbTe single quantum wells embedded between Pb_0.92Eu_0.08Te barriers grown by MBE on BaF₂. The electron concentration in the devices was tuned by the gate voltage applied across an interfacial p–n junction. The most important observation was zero-magnetic field conductance quantization (in multiplies of 2e²/h) in narrow constrictions of dimensions comparable to electron mean free path calculated from transport mobility. This indicates considerable relaxation of requirements for quantum ballistic transport in comparison with other materials. We argue that the huge static dielectric constant of PbTe (₀=1350 at 4.2 K) leads to suppression of the long-range Coulomb potentials of charged impurities and, thus, provides favorable conditions for the conductance quantization.     

Ballistic transport in InSb mesoscopic structures

Two different device geometries are fabricated to investigate ballistic transport of electrons in low-dimensional InSb structures. Negative bend resistance is observed in four-terminal devices of channel widths ranging from 0.2 to 0.65 μm. We also report the observation of conductance quantization in quantum point contacts fabricated using in-plane gates. The one-dimensional subbands depopulate with increasing transverse magnetic field up to 3 T. Zeeman splitting is resolved at magnetic fields above 0.9 T.     

Ballistic electron transport in wrinkled superlattices

Inspired by the problem of elastic wave scattering on wrinkled interfaces, we studied the scattering of ballistic electrons on a wrinkled potential energy region. The electron transmission coefficient depends on both wrinkle amplitude and periodicity, having different behaviors for positive and negative scattering potential energies. For scattering on potential barriers, minibands appear in the electron transmission, as in superlattices, whereas for scattering on periodic potential wells the transmission coefficient has a more complex form. Besides suggesting that tuning of electron transmission is possible by modifying the scattering potential via voltages on wrinkled gate electrodes, our results emphasize the analogies between ballistic electrons and elastic waves even in scattering problems on non-typical configurations.     

Ballistic/quasi-ballistic transport in nanoscale transistor

The current voltage characteristics of the silicon ballistic MOSFETs are introduced and discussed. They are derived by considering the current capacity through the bottleneck point in the channel, and they provide a simple measure of the performance limit. The performance of experimental nanoscale bulk MOSFETs are compared with the ideal ballistic limit. It was shown that the performance degradation due to carrier scattering amounts to several to several tens percent in recent nanoscale MOSFETs. Quasi-ballistic transport in MOSFETs was also analyzed by a simple approach based on the transmission viewpoint. Channel-length reduction was found to yield consistent improvement of the ballisticity. Considerable performance degradation, however, was still found to persist even in 10-nm MOSFETs. The role of each carrier scattering mechanism is analyzed. It is shown that elastic scattering degrades the performance, but the inelastic energy relaxation improves the performance of the MOSFET.     

Ballistic transport through a sharp domain wall in a semiconducting ferromagnetic nanoconstriction and in the presence of the Dresselhaus spin-orbit coupling

We study the effect of the Dresselhaus spin-orbit interaction on the magnetoresistance (MR) of a quasi-one-dimensional ferromagnetic semiconductor containing a sharp domain wall. The MR is calculated in the ballistic regime, within the Landauer-Büttiker formalism. The results show that the Dresselhaus spin-orbit coupling which induces an effective magnetic field along the wire, reduces the domain wall MR.     

Ballistic electron transport in AlAs quantum wells

We report the observation of commensurability oscillations in an AlAs two-dimensional electron system where two conduction-band valleys with elliptical in-plane Fermi contours are occupied. The Fourier power spectrum of the oscillations shows two frequency components consistent with those expected for the Fermi contours of the two valleys. From an analysis of the spectra we deduce m(l)/m(t)=5.2+/-0.5 for the ratio of the longitudinal and transverse electron effective masses, a fundamental parameter that cannot be directly measured from other transport experiments.     

Properties of localized pulses through the analysis of temporal modulation effects in Bessel beams and the convolution theorem

In this paper we analyze the effects of the time modulation of (zeroth-order) Bessel beams, by considering a few different pulse shapes. Namely, three modulating functions are considered: a train of rectangular waves, a single rectangular pulse, and a gaussian pulse. The influence of the carrier frequency, and of shape and spectral bandwidth of the modulating function, is also discussed; while further support to our results is met by using the convolution technique in the time domain. At the beginning, a brief review of the X-shaped solutions to the wave equation, and of some properties of theirs, is presented.     

Renormalization-convolution approach to the electronic transport in two-dimensional aperiodic lattices

A novel method combining the renormalization and convolution techniques is developed for the Kubo-Greenwood formula. Using this method, the dc and ac conductance at zero temperature in two-dimensional (2D) quasiperiodic systems are studied. The results show that the ac conductance of quasiperiodic systems could be significantly modified by the presence of periodic leads, which are usually employed as the measurement connections. Furthermore, when the system is periodic along the applied electrical field, a quantized dc conductance spectrum is observed at zero temperature and this quantized spectrum is destroyed when an oscillating electrical field is introduced. However, when the electric field is applied along a quasiperiodic direction of the system, the ac conductance spectrum shows a non-Drude behaviour, in good agreement with experiment results.     

Ballistic phonon thermal transport in multiwalled carbon nanotubes

We report electrical transport experiments, using the phenomenon of electrical breakdown to perform thermometry, that probe the thermal properties of individual multiwalled carbon nanotubes. Our results show that nanotubes can readily conduct heat by ballistic phonon propagation. We determine the thermal conductance quantum, the ultimate limit to thermal conductance for a single phonon channel, and find good agreement with theoretical calculations. Moreover, our results suggest a breakdown mechanism of thermally activated C-C bond breaking coupled with the electrical stress of carrying approximately 10(12) A/m2. We also demonstrate a current-driven self-heating technique to improve the conductance of nanotube devices dramatically.     

Ballistic Transport through a Strained Region on Monolayer Phosphorene

We investigate quantum transport of carriers through a strained region on monolayer phosphorene theoretically.The electron tunneling is forbidden when the incident angle exceeds a critical value. The critical angles for electrons tunneling through a strain region for different strengths and directions of the strains are different.Owing to the anisotropic effective masses, the conductance shows a strong anisotropic behavior. By tuning the Fermi energy and strain, the channels can be transited from opaque to transparent, which provides us with an efficient way to control the transport of monolayer phosphorene-based microstructures.     

Ballistic transport and quantum interference in InSb nanowire devices

An experimental realization of a ballistic superconductor proximitized semiconductor nanowire device is a necessary step towards engineering topological quantum electronics. Here, we report on ballistic transport in In Sb nanowires grown by molecular-beam epitaxy contacted by superconductor electrodes. At an elevated temperature, clear conductance plateaus are observed at zero magnetic field and in agreement with calculations based on the Landauer formula. At lower temperature, we have observed characteristic Fabry–Pérot patterns which confirm the ballistic nature of charge transport.Furthermore, the magnetoconductance measurements in the ballistic regime reveal a periodic variation related to the Fabry–Pérot oscillations. The result can be reasonably explained by taking into account the impact of magnetic field on the phase of ballistic electron's wave function, which is further verified by our simulation. Our results pave the way for better understanding of the quantum interference effects on the transport properties of In Sb nanowires in the ballistic regime as well as developing of novel device for topological quantum computations.     

Ballistic transport in extended Datta-Das spin field effect transistors

The model of the Datta-Das spin field effect transistor [S. Datta, B. Das, Appl. Phys. Lett. 56 (1990) 665] is extended in several respects: (1) the Rashba effect and Dresselhaus effect coexist; (2) the incoming and outgoing leads are both ferromagnetic; (3) the interfacial scattering and band mismatch are taken into account. By using the Griffith boundary conditions, the transmission coefficients and, thus, the Landauer-Büttiker conductance are obtained analytically. The transmission probability and conductance of the spin field effect transistor are studied in detail.     

Anisotropic Ballistic Transport through a Potential Barrier on Monolayer Phosphorene

We demonstrate theoretically the anisotropic quantum transport of electrons through a single barrier on monolayer phosphorene.Using an effective k·p Hamiltonian,we Bnd that the transmission probability for transport through n-n-n(or n-p-n) junction is an oscillating function of the incident angle,the barrier height,as well as the incident energy of electrons.The conductance in such systems depends sensitively on the transport direction due to the anisotropic effective mass.By tuning the Fermi energy and gate voltage,the channels can be transited from opaque to transparent,which provides us with an efficient way to control the transport of monolayer phosphorene-based microstructures.     

Ballistic transport in InSb quantum wells at high temperature

Measurements were made on a 0.2 μm four-terminal device, fabricated from an InSb/Al_0.15In_0.85Sb quantum well structure, at temperatures from 1.5 to 300 K. Negative bend resistance, a signature of ballistic transport, was observed at temperatures up to 205 K. The disappearance of the negative bend resistance at higher temperatures was accompanied by a non-linear dependence of the Hall voltage on magnetic field. The non-linearity indicates multiple-carrier conduction, which we characterize using quantitative mobility spectrum analysis.     

Ballistic thermal transport in a cylindrical quantum structure modulated with double quantum dots

Ballistic thermal transport properties in a cylindrical quantum structure modulated with double quantum dots(DQDs) are investigated.Results show that the transmission coefficients exhibit the irregular oscillation.Some resonant transmission peaks and stop-frequency gaps can be observed,and the number and positions of these peaks and gaps are sensitive to the sizes of DQDs.With increasing the temperature,the thermal conductance undergoes a transition from the decrease to increase,and can be efficiently tuned by modulating the radius,length of DQDs as well as the interval between DQDs.In addition,at low temperatures,the enhancement of the thermal conductance can be also observed in this case.Some similarities and differences between the cylindrical and rectangular structures are identified.     

An extension of the fourier convolution theorem in terms of poisson brackets

The Fourier convolution theorem is extended to cover nonstationary and inhomogeneous phenomena. The Fourier transforms of input and transfer functions, F and K, are assumed to be slowly varying functions of x and t. The first-order corrections to the usual convolution theorem are given by Poisson brackets of F and K. These are calculated over k, ω, x and t. The method is applied to study induced currents in a plasma.     

Hot electrons in silicon dioxide: Ballistic to steady-state transport

Hot electron transport in silicon dioxide is examined with emphasis on current experimental and theoretical results. For oxide layers thicker than 100 Å, steady-state transport has been shown to control the carrier flow at all fields studied. The transition from a nearly thermal electron distribution at electric fields less than approximately 1.5 MV/cm to significantly hot distributions with average energies between 2 and 6 eV at higher fields of up to 16 MV/cm is discussed. The significance of nonpolar phonon scattering in controlling the dispersive transport at higher electric fields, thereby preventing runaway and avalanche breakdown, is reviewed. The transition from ballistic to steady-state transport on very thin oxides layers of less than 100 Å in thickness and the observation of single phonon scattering events are also discussed.