双沟4H-SiC MESFET优化结构的解析模型及性能

优化双沟4H-SiC MESFET结构,通过求解一维和二维泊松方程,建立优化结构的解析模型,分析这种结构的直流和交流特性.结果表明,饱和电流密度的计算结果与实验一致,结构优化后4H-SiC MESFET的饱和电流密度和击穿电压分别为420μA·μm^-1和155 V,明显高于优化前的275μA·μm^-1和141 V;最高输出功率密度为7.4 W·mm^-1,比优化前提高约64%;截止频率和最高振荡频率比优化前略微提高.双沟结构经优化后其交流小信号特性未退化而功率特性获得明显改善.     

分段表面放电沉积效率研究

利用一种结构紧凑的分段表面放电辐射源模块，详细研究了在不同电压、电容、气压实验条件下回路等效电阻、等效电感及放电能量沉积效率的变化规律，利用四分幅相机拍摄获得了不同实验条件下的放电等离子体通道图像，分析讨论了放电等离子体运动对放电能量沉积效率的影响，提出了提高能量放电沉积效率的有效途径。     

高功率微波作用下热载流子引起n型金属-氧化物-半导体场效应晶体管特性退化研究

高功率微波(HPM)通过使半导体器件特性退化和功能失效,从而干扰电子系统无法正常工作. 针对金属氧化物半导体(MOS)器件的HPM效应, 建立了高功率微波引起n型金属氧化物半导体场效应晶体管(nMOSFET)特性退化的物理过程与模型. 器件仿真结果中nMOSFET的输出特性曲线显示栅极注入HPM引起器件特性退化,包括阈值电压正向漂移、 饱和电流减小、跨导减小等;结合物理模型分析可知, HPM引起的高频脉冲电压使器件进入深耗尽状态, 热载流子数目增多,热载流子效应导致器件特性退化. MOS器件的HPM注入实验结果显示,器件特性曲线、器件模型参数变化趋势与仿真结果一致, 验证了HPM引起nMOSFET特性退化的物理过程与模型.     

高速高饱和单行载流子光探测器的设计与分析

设计了一种In P基的背入射台面结构的单行载流子光探测器.通过在吸收层中采取高斯型掺杂界面及引入合适厚度和掺杂浓度的崖层,使得光探测器同时具备了高速和高饱和电流特性.理论分析表明,在光敏面为14μm2、反向偏压为2 V条件下,该器件的3 d B带宽可达58 GHz,直流饱和电流高达158 m A.在大功率光注入条件下,详细分析了光探测器带宽降低和电流饱和现象,得出能带偏移和电场坍塌是其根本原因的结论.     

Small and large signal analysis using circuit model of InGaAs/InP based uni-travel carrier photodiode

An equivalent circuit model of uni-traveling carrier photodiode (UTC-PD) is developed from integral carrier density rate equation and few important properties of the device such as the electrical and optical characteristics are evaluated by employing advanced device physics. Circuit model incorporates chip and package parasitic of the device quite simply to provide practical behaviour of UTC-PD. We have developed small signal ac circuit model which is useful for the analysis of low power modulation characteristics of the device and dc circuit model which is advantageous to find wavelength dependent responsivity fairly accurately. At high optical input power the device bandwidth is found to be increased through enhancement of self-induced field in the absorption region and high output power can be derived from the device when absorption width is large. Such condition calls for large signal analysis. We have developed large signal circuit model by combining few mathematical transformations with small signal circuit model with different circuit element values. Our large signal model is unique that the same circuit can be used for both small and large signal analysis. With large signal model the optical power induced bandwidth improvement and output photocurrent saturation are explained. Large signal model is validated through linearity and IP3 analysis which found close agreement with the measured results.     

Study on the saturation characteristics of high-speed uni-traveling-carrier photodiodes based on field screening analysis

A back-illuminated mesa-structure InGaAs/InP charge-compensated uni-traveling-carrier(UTC) photodiode(PD) is fabricated,and its saturation characteristics are investigated.The responsivity of the 40-μmdiameter PD is as high as 0.83 A/W,and the direct current(DC) saturation current is up to 275 mA.The 1-dB compression point at the 3-dB cutoff frequency of 9 GHz is measured to be 100 mA,corresponding to an output radio frequency(RF) power of up to 20.1 dBm.According to the calculated electric field distributions in the depleted region under both DC and alternating current(AC) conditions,the saturation of the UTC-PD is caused by complete field screening at high optical injection levels.     

AlGaN/GaN双异质结F注入增强型高电子迁移率晶体管

理论模拟了不同GaN沟道厚度的双异质结(AlGaN/GaN/AlGaN/GaN)材料对高电子迁移率晶体管(HEMT)特性的影响,并模拟了不同F注入剂量下用该材料制作的增强型器件的特性差异.采用双异质结材料,结合F注入工艺成功地研制出了较高正向阈值电压的增强型HEMT器件.实验研究了三种GaN沟道厚度制作的增强型器件直流特性的差异,与模拟结果进行了对比验证.采用降低的F注入等离子体功率,减小了等离子体处理工艺对器件沟道迁移率的损伤,研制出的器件未经高温退火即实现了较高的跨导和饱和电流特性.对14 nm GaN沟道厚度的器件进行了阈值电压温度稳定性和栅泄漏电流的比较研究,并且分析了双异质结器件的漏致势垒降低效应.     

多电极半导体光放大器对增益特性的改善

提出了采用多电极实现电流非均匀注入来改变半导体光放大器(SOA)内部的载流子分布,从而改变其增益饱和特性的一种新的方案.用SOA分段模型的计算结果表明,与单电极均匀注入电流的SOA 相比,在同样的总注入电流下,对一个两电极SOA采用前面小后面大的非均匀电流注入,可以提高饱和输出功率和饱和输入功率.而采用前面大后面小的电流注入方式,则将使SOA更容易发生饱和,不仅饱和输出功率与饱和输入功率减小,而且增益谱在饱和后的压缩程度加大,增益谱压缩的对称性提高.对多电极SOA,可以方便灵活地调节各节之间的长度比和注入电流比来满足不同的应用要求.     

Velocity of current filament at the high gain mode of GaAs power photoconductive switches

Many of the characteristics, especially transient turn-on, of high gain mode photoconductive semiconductor switches can be explained by a model similar to a gas streamer model in this paper. Based on the gas discharge theory and photoactivated charge domain model, the mechanism of current filament at the high gain mode of GaAs photoconductive semiconductor switches (PCSSs) was discussed. It is pointed out that both the carrier density and the regional electric field satisfy two critical conditions for the formation and development of streamers. Experimental phenomena indicate that the turn-on time is considerably shorter than the time required for the transit of carriers crossing the electrode gap of the device at saturation transfer velocity. Moreover, the transient turn-on characteristic was analyzed and the ultra-fast velocity of current filament was calculated. The calculated results are in agreement with the experimental results.     

新型宽温区高热稳定性微波功率SiGe 异质结双极晶体管

宽温区大电流下的热不稳定性严重制约着功率SiGe 异质结双极晶体管 (HBT) 在射频和微波电路中的应用.为改善器件的热不稳定性, 本文利用SILVACO TCAD建立的多指功率SiGe HBT模型, 分析了器件纵向结构中基区Ge组分分布对微波功率SiGe HBT电学特性和热学特性的影响. 研究表明, 对于基区Ge组分为阶梯分布的HBT, 由于Ge组分缓变引入了少子加速电场, 使它与均匀基区Ge组分HBT相比, 具有更高的特征频率f_T, 且电流增益β和f_T随温度变化变弱, 这有利于防止器件在宽温区工作时电学特性的漂移.同时, 器件整体温度有所降低, 但器件各指温度分布均匀性较差.考虑多指HBT各发射极指散热能力存在差异, 在器件纵向结构设计为基区Ge组分阶梯分布的同时, 对其横向版图进行发射极指间距渐变结构设计, 用于改善器件各指温度分布的均匀性, 进而提高HBT的热稳定性.结果表明, 与基区Ge组分为均匀分布的等发射极指间距结构HBT相比, 新器件各指温度分布均匀性明显改善, f_T保持了较高的值, 且β和f_T 随温度变化不敏感, 热不稳定性得到显著改善, 显示了新器件在宽温区大电流下工作的优越性. 关键词： SiGe 异质结双极晶体管 Ge组分分布 发射极指间距渐变技术 热稳定性     

应变Si NMOSFET漏电流解析模型

基于应变Si/SiGe器件结构,本文建立了统一的应变Si NMOSFET漏电流解析模型. 该模型采用平滑函数,实现了应变Si NMOSFET漏电流及其导数,从亚阈值区到强反型区以及从线性区到饱和区的平滑性,解决了模型的连续性问题. 同时考虑了载流子速度饱和效应和沟道长度调制效应的影响,进一步提高了模型精度. 通过将模型的仿真结果和实验结果对比分析,验证了所建模型的有效性. 该模型可为应变Si数字集成电路和模拟集成电路分析、设计提供重要参考. 关键词： 应变Si NMOSFET 漏电流 解析模型     

Calculating transport AC losses in stacks of high temperature superconductor coated conductors with magnetic substrates using FEM

In this paper, the authors investigate the electromagnetic properties of stacks of high temperature superconductor (HTS) coated conductors with a particular focus on calculating the total transport AC loss. The cross-section of superconducting cables and coils is often modeled as a two-dimensional stack of coated conductors, and these stacks can be used to estimate the AC loss of a practical device. This paper uses a symmetric two dimensional (2D) finite element model based on the H formulation, and a detailed investigation into the effects of a magnetic substrate on the transport AC loss of a stack is presented. The number of coated conductors in each stack is varied from 1 to 150, and three types of substrate are compared: non-magnetic weakly magnetic and strongly magnetic. The non-magnetic substrate model is comparable with results from existing models for the limiting cases of a single tape (Norris) and an infinite stack (Clem). The presence of a magnetic substrate increases the total AC loss of the stack, due to an increased localized magnetic flux density, and the stronger the magnetic material, the further the flux penetrates into the stack overall. The AC loss is calculated for certain tapes within the stack, and the differences and similarities between the losses throughout the stack are explained using the magnetic flux penetration and current density distributions in those tapes. The ferromagnetic loss of the substrate itself is found to be negligible in most cases, except for small magnitudes of current. Applying these findings to practical applications, where AC transport current is involved, superconducting coils should be wound where possible using coated conductors with a non-magnetic substrate to reduce the total AC loss in the coil.     

GaN高电子迁移率晶体管强电磁脉冲损伤效应与机理

提出了一种新型GaN异质结高电子迁移率晶体管在强电磁脉冲下的二维电热模型,模型引入材料固有的极化效应,高场下电子迁移率退化、载流子雪崩产生效应以及器件自热效应,分析了栅极注入强电磁脉冲情况下器件内部的瞬态响应,对其损伤机理和损伤阈值变化规律进行了研究.结果表明,器件内部温升速率呈现出"快速-缓慢-急剧"的趋势.当器件局部温度足够高时(2000 K),该位置热电子发射与温度升高形成正反馈,导致温度急剧升高直至烧毁.栅极靠近源端的柱面处是由于热积累最易发生熔融烧毁的部位,严重影响器件的特性和可靠性.随着脉宽的增加,损伤功率阈值迅速减小而损伤能量阈值逐渐增大.通过数据拟合得到脉宽τ与损伤功率阈值P和损伤能量阈值E的关系.     

Investigation of Bi-2223 high temperature superconducting tape as the material for gradient coil in MRI

The use of Bi-2223 high temperature superconducting (HTS) tape as a material for gradient coils in MRI is evaluated in this paper. Bi-2223 tapes have a very high critical current and a very low power loss. A HTS tape gradient coil is expected to provide much higher gradient strength and generate much lower heating than a copper coil. Measurements of the AC power loss of Bi-2223 tapes at typical operating frequencies for gradient coils are presented. The degradation of the critical current and its effect on the increase of AC power loss is analyzed. Practical technical issues such as resistance, gradient strength and mechanical performance are also discussed. A prototype Bi-2223 HTS tape gradient coil is evaluated to verify the concept.     

AC loss of low temperature superconducting AC wire caused by longitudinal and azimuthal AC magnetic field components

We investigated the AC loss characteristics of a low temperature NbTi AC wire by measuring the AC transport current losses in the external AC magnetic field whose components are the longitudinal and transverse ones. The measurement results showed that the AC losses were significantly dependent on the directions and magnitudes of the external longitudinal field component. The AC losses caused by the longitudinal and azimuthal field components were estimated by our previously derived model. The theoretical results well explained the dependence of the AC losses on the longitudinal field components. It was also shown that the AC losses can be substantially reduced by the proper choice of the twisting way.     

高功率微波作用下高电子迁移率晶体管的损伤机理

本文针对高电子迁移率晶体管在高功率微波注入条件下的损伤过程和机理进行了研究,借助SentaurusTCAD仿真软件建立了晶体管的二维电热模型,并仿真了高功率微波注入下的器件响应.探索了器件内部电流密度、电场强度、温度分布以及端电流随微波作用时间的变化规律.研究结果表明,当幅值为20 V,频率为14.9 GHz的微波信号由栅极注入后,器件正半周电流密度远大于负半周电流密度,而负半周电场强度高于正半周电场.在强电场和大电流的共同作用下,器件内部的升温过程同时发生在信号的正、负半周内.又因栅极下靠近源极侧既是电场最强处,也是电流最密集之处,使得温度峰值出现在该处.最后,对微波信号损伤的高电子迁移率晶体管进行表面形貌失效分析,表明仿真与实验结果符合良好.     

Design of micro resonator quantum well intensity modulator

A compact rectangular resonator quantum well intensity modulator for operation in the wavelength band around 1?μm is described. The modulator is realized using InGaAs/GaAs modulation-doped quantum wells and operates on the principles of index change caused by blue shifts of the absorption edge. High efficiency 90° bends are used to form the resonator and to provide optimal coupling to the external waveguide. The benefits are to reduce loss, to relax the lithography requirements and to provide more flexible contact designs to the modulator. The characteristics of the modulator are analyzed using MATLAB and FDTD simulation tools with refractive index profiles based on measured absorption parameters. A model including parasitics is developed for HSPICE transient simulations and is run in the AGILENT ADS environment. The performance parameters are determined to be an extinction ratio of 10.4 dB, a bandwidth of 33?GHz, and a dc power less than 1 mW for device dimensions of 16?×?6?μm².     

Effect of Temperature Variation on the Characteristics of Microwave Power AlGaN/GaN MODFET

The prime motivation for developing the proposed model of AlGaN/GaN microwave power device is to demonstrate its inherent ability to operate at much higher temperature. An investigation of temperature model of a 1 μm gate AlGaN/GaN enhancement mode n-type modulation-doped field effect transistor (MODFET) is presented. An analytical temperature model based on modified charge control equations is developed. The proposed model handles higher voltages and show stable operation at higher temperatures. The investigated temperature range is from 100 °K–600 °K. The critical parameters of the proposed device are the maximum drain current (I_Dmax), the threshold voltage (V_th), the peak dc trans-conductance (g_m), and unity current gain cut-off frequency (f_T). The calculated values of f_T (10–70 GHz) at elevated temperature suggest that the operation of the proposed device has sufficiently high current handling capacity. The temperature effect on saturation current, cutoff frequency, and trans-conductance behavior predict the device behavior at elevated temperatures. The analysis and simulation results on the transport characteristics of the MODFET structure is compared with the previously measured experimental data at room temperature. The calculated critical parameters suggest that the proposed device could survive in extreme environments.     

AlInGaAs垂直谐振腔顶面发射半导体激光器横向温度效应的解析热模型及其表征

依据增益导波垂直谐振腔顶面发射半导体激光器热区特点与室温连续波运行条件建立了一个优化的全解析热模型，对AlInGaAs/AlGaAs垂直谐振腔激光器的横向温度效应进行了详细的解析计算分析，其完全的解析表达展示了更加清晰的横向热场物理图像，对于器件内部热场变化规律的理论预期与实验结果完全符合. 该解析模型及其结果对于研究热稳态下的垂直谐振腔激光器热动力学特性，优化器件结构和控制激光器的阈值电流与功率温度饱和效应，特别是二维面阵器件中的横向热叠加效应提供了一个有用的工具. 关键词： 半导体面发射激光器 热效应 解析计算模型.     

高功率980nm垂直腔面发射激光器的亮度特性

在循环水冷却(工作环境温度控制在15℃)和连续注入电流条件下,从垂直腔面发射激光器(VCSEL)亮度基本定义出发,实验测量了不同注入电流时口径为400μm的高功率980nm InGaAs/GaAs应变量子阱垂直腔面发射激光器(VCSEL)的亮度特性。结果表明:在注入电流4 A时,随着注入电流的增加,亮度也跟着增加;当注入电流4A时,尽管输出功率在增加,但是器件的光束质量变差,M2因子升高,表明此时影响器件亮度的主导因素是M2因子,所以亮度减小;在注入电流为4A,输出功率为1.2W时,亮度达到最大值2.43kW/cm2.sr,此时的光束质量最好,M2因子为207。最后,分析了影响高功率VCSEL器件亮度特性的主要因素,提出了提高器件亮度特性的解决方法。