Quantum diffusion in solid H2?Ne solutions

Quantum diffusion in solid hydrogen containing 0.02–0.25 mol.% neon has been investigated by the calorimetric method in temperature range 1–3 K. The concentrations of orthohydrogen were 0.23; 0.5 and 1 mol. %. The parameter studied was characteristic configurational relaxation time τ. Heat capacity is very sensitive to space distribution of orthohydrogen molecules. Therefore, the determination of configuration relaxation rate has been performed by observing the time dependence of heat capacity. A neon impurity in the indicated concentration is observed to accelerate quantum diffusion in hydrogen. The magnitude of the effect diminishes as the temperature increases.     

Chromatic polarization in solid parahydrogen with an argon impurity at an extremely low concentration

The effect of chromatic polarization observed in samples prepared for studying thermal conductivity of weak solid solutions (p-H₂)_{1 − x} Ar _x has been described. Bulk cylindrical samples have been grown in a molybdenum glass ampule through desublimation followed by control of their quality in polarized light. In contrast to weak solid solutions (p-H₂)_{1 − x} Ne _x with a heavy quasi-isotopic neon impurity, the samples with argon at the same concentrations (several parts per million) exhibit inclined chromatic bands due to elastic mechanical stresses induced after cooling to liquid-helium temperature.     

Electrical conduction properties of Si δ-doped GaAs grown by MBE

The temperature dependent Hall effect and resistivity measurements of Si δ-doped GaAs are performed in a temperature range of 25–300 K. The temperature dependence of carrier concentration shows a characteristic minimum at about 200 K, which indicates a transition from the conduction band conduction to the impurity band conduction. The temperature dependence of the conductivity results are in agreement with terms due to conduction band conduction and localized state hopping conduction in the impurity band. It is found that the transport properties of Si δ-doped GaAs are mainly governed by the dislocation scattering mechanism at high temperatures. On the other hand, the conductivity follows the Mott variable range hopping conduction (VRH) at low temperatures in the studied structures.     

Transport in ultraclean YBa2Cu3O7: neither unitary nor born impurity scattering

The thermal conductivity of ultraclean YBa2Cu3O7 was measured at very low temperature in magnetic fields up to 13 T. The temperature and field dependence of the electronic heat conductivity show that two widespread assumptions of transport theory applied to unconventional superconductors fail for clean cuprates: impurity scattering cannot be treated in the usual unitary limit (nor indeed in the Born limit), and scattering of quasiparticles off vortices cannot be neglected. Our study also sheds light on the long-standing puzzle of a sudden onset of a "plateau" in the thermal conductivity of Bi-2212 versus field.     

Low-field carrier transport properties in biased bilayer graphene

Based on a semiclassical Boltzmann transport equation in random phase approximation, we develop a theoretical model to understand low-field carrier transport in biased bilayer graphene, which takes into account the charged impurity scattering, acoustic phonon scattering, and surface polar phonon scattering as three main scattering mechanisms. The surface polar optical phonon scattering of carriers in supported bilayer graphene is thoroughly studied using the Rode iteration method. By considering the metal–BLG contact resistance as the only one free fitting parameter, we find that the carrier density dependence of the calculated total conductivity agrees well with that observed in experiment under different temperatures. The conductivity results also suggest that in high carrier density range, the metal–BLG contact resistance can be a significant factor in determining the BLG conductivity at low temperature, and both acoustic phonon scattering and surface polar phonon scattering play important roles at higher temperature, especially for BLG samples with a low doping concentration, which can compete with charged impurity scattering.     

Temperature and concentration dependences of thermal conductivity of solid solutions of gadolinium and dysprosium sulfides

Thermal conductivity of a number of solid solutions of gadolinium and dysprosium sulfides has been studied experimentally within the temperature range 80-400 K. The work offers the data on thermal conductivity coefficient and lattice thermal conductivity of the studied samples. It was found that replacement of gadolinium ions by dysprosium ions leads to significant decrease of the samples?? thermal conductivity and changes its temperature dependence character due to the resonance scattering of phonons by paramagnetic ions of dysprosium. Influence of this mechanism of phonon scattering conditions the area of anomalous change observed on the concentration dependence of thermal conductivity coefficient.     

Lateral Epitaxy Overgrown (LEO) GaN 导热系数的数值研究

利用修正的Callaway模型对含杂质、位错、以及同位素的LEO GaN的导热系数进行了研究,计算表明同位素对LEO GaN的导热系数影响较大,而位错和杂质大于一定值时其值才对导热系数产生影响.     

Poiseuille flow of phonons in solid hydrogen

The thermal conductivity of solid parahydrogen is investigated using the stationary method with a plane sample in the temperature range 1.5–6.0 K in order to reveal a Poiseuille flow in solid hydrogen. It is established that the thermal conductivity at temperatures below the low-temperature maximum decreases very rapidly in accordance with the law K ～ T ⁿ (3 < n < 8). This finding is a direct indication that the possibility exists of observing a Poiseuille flow in solid hydrogen. The results obtained are compared with those for solid helium, in which the Poiseuille flow was observed for the first time in dielectric solids. According to the estimates, the mean free path of phonons at a temperature of approximately 3 K exceeds the radius of a cylindrical sample (3 mm). The thermal conductivity in the vicinity of the low-temperature maximum is found to be two times higher than the value available in the literature.     

A new model of solution hardening in fcc metals based on the interaction with plural obstacles

A new model of solution hardening in fcc metals assumes that dislocation motion is controlled by a thermal activation process. In the model, the interaction of a dislocation with plural solute atoms is taken into account in a single activation event. The actual number of solute atoms which are involved in an activation event is determined by minimizing the activation energy. The model predicts a temperature dependence for the flow stress that agrees reasonably well with experimental results. Especially, it predicts the appearance of an inverse temperature dependence of the flow stress in the low-temperature region. Thus, the anomalous lowering of the flow stress at low temperatures, observed in some dilute alloys, can be explained solely by the dislocation–solute atom interaction. This is to be compared with the conventional explanation, in which another cause, the so-called inertial effect, was invoked. Another feature of the new model is that it provides a simple explanation for the occurrence of the stress equivalence phenomenon.     

Isotherms of thermal conductivity in PbTe-MnTe solid solutions

The temperature dependences of the thermal conductivity λ of PbTe-MnTe solid solutions (0–4 mol % MnTe) are measured in the range 170–670 K. The data obtained are used in constructing the isotherms of the lattice thermal conductivity λ_l and in estimating the effective cross section for phonon scattering by Mn impurity atoms. It is found that all the isotherms exhibit an anomalous increase in λ_l in the concentration range 1.25–2.0 mol % MnTe, which disagrees with the usually observed decrease in λ_l with an increase in the impurity concentration. It is assumed that the anomalous increase in λ_l manifests itself after attainment of the percolation threshold when a continuous chain of overlapping deformation fields produced by individual atoms (an infinite cluster) is formed in the crystal. In the crystal lattice, stresses are partly compensated and phonon scattering decreases. The assumption is made that the effect observed has a universal character.     

Heat transfer in solid HD at low temperatures

The lattice thermal conductivity of solid HD has been calculated in the temperature range 0.2–4°K. The important scatterers of phonons are found to be boundary walls of the crystal, isotopic impurities, phonons and molecules of ortho hydrogen and para deuterium. The presence of molecules of ortho hydrogen and para deuterium in solid HD which act as rotational impurities, are responsible for one and two phonon scattering processes in the system. The entire study is based on the Callaway model of the lattice thermal conductivity of an insulator. Excellent agreement is found between calculated and experimental values of phonon conductivity. The extra lattice thermal resistivity due to the presence of the ortho hydrogen and para deuterium is also calculated.     

Theoretical study of defect formation processes in metals

Abstract

The equilibrium solute atmosphere around a straight edge dislocation in interstitial solid solutions has been investigated. A long-range deformation interaction among impurities is accounted for. Quantitative estimations have been given for the example of carbonaceous martensite. The impurity concentrations in an atmosphere around the dislocation core are calculated for a given temperature in dependence on its mean value in the specimen. For a dislocation with an impurity atmosphere stationary fluxes of interstitial atoms and vacancies on the dislocation are calculated; a concentration dependence of impurity parameters indicating a dislocation capture efficiency of the self-interstitial atoms and vacancies and the parameter of dislocation preference B are received; a radiation-induced deformation rate (swelling and creep) is determined.     

A dislocation model for the viscosity of water

A dislocation model for the shear viscosity of water is proposed, based upon the dislocation theory of melting and liquid state. This model, studied extensively within the last years in relation to phase transitions in two-dimensional systems, makes rigorous use of the similarity between the structure of a liquid and that of a crystalline solid. Viscous flow in water due to slip of dislocation loops is proposed as an alternative point of view to the hole theories and the cluster models of hydrogen bonded molecules. The model correctly yields the temperature dependence of the viscosity at normal pressure between melting and boiling point.     

Electrical transport and persistent photoconductivity in quantum dot layers in InAs/GaAs structures

The conductivity of quantum dot layers is studied in InAs/GaAs structures in the temperature range from 300 to 0.05 K in the dark and using two types of illumination in magnetic fields up to 6 T. Depending on the initial concentration of current carriers, the conductivity of the structures varied from metallic (the Shubnikov-de Haas effect was observed) to hopping conductivity. At low temperatures, the temperature dependence of the resistance changed from the Mott dependence to the dependence described by the Shklovskii-Efros law for hopping conductivity in the presence of the Coulomb gap in the density of states. The conductivity of samples was studied upon their illumination at λ = 791 nm and λ > 1120 nm. All the samples exhibited a positive persistent photoconductivity at T < 250 K. The structures were also studied using photoluminescence and an atomic force microscope.     

Thermal properties of amorphous materials at low temperatures

Recent investigations of X-ray diffraction and electron micrograph studies reveal high density clusters separated by density deficient regions (voids) in amorphous materials. The low temperature specific heat and the thermal conductivity anomalies are explained on the basis of such a structure for amorphous materials. It is a generalisation of Debye's theory applied to most of the amorphous solids in the temperature range from 0 to 10 K. The anharmonic effects lead to the observed temperature dependence of the sound velocity. The thermal conductivity between 0 and 2 K is due to thermal diffusion, the plateau observed between 2 and 20 K is a consequence of the decrease in thermal conductivity due to three phonon processes compensated by intercluster diffusion, while beyond this range it is due to excitations within a cluster limited by the size of a cluster. Further the model predicts the coefficient of expansion about 100 times that found in the corresponding crystalline solids. An experimental verification of this result can be a good test for the model.     

Heat transfer in the high-temperature phase of solid SF<Subscript>6</Subscript>

The temperature dependences of the thermal conductivity are calculated for solid SF₆ and Xe. The influence of thermal pressure in a crystal on the isochoric thermal conductivity is investigated. The contributions of the phonon-phonon and phonon-rotation interactions to the total thermal resistance of solid SF₆ are calculated using a modified method of reduced coordinates. The temperature dependence of the isochoric thermal conductivity of SF₆ is explained by a combined effect of thermal pressure and phonon-rotation interaction.     

An experimental correlation approach for predicting thermal conductivity of water-EG based nanofluids of zinc oxide

In this study, the effects of temperature (20 °C<T<50 °C) and volume fracti°n (0<φ<4%) on the thermal conductivity of zinc oxide/ethylene glycol-water nanofluid have been presented. Nanofluid samples were prepared by a two-step method and thermal conductivity measurements were performed by a KD2 pro instrument. Results showed that the thermal conductivity increases uniformly with increasing solid volume fraction and temperature. The results also revealed that the thermal conductivity of nanofluids significantly increases with increasing solid volume fraction at higher temperatures. Moreover, it can be seen that for more concentrated samples, the effect of temperature was more tangible. Experimental thermal conductivity enhancement of the nanofluid in comparison with the Maxwell model indicated that Maxwell model was unable to predict the thermal conductivity of the present nanofluid. Therefore, a new correlation was presented for predicting the thermal conductivity of ZnO/EG-water nanofluid.     

The thermal conductivity of mixtures of methane with argon and neon

The paper reports new measurements of the thermal conductivity of mixtures of neon and argon with methane at a temperature of 27.5°C. The measurements have been performed with a transient hot-wire instrument within the pressure range 1 to 22 MPa and the results have an estimated uncertainty of ±0.3%.The thermal conductivity data for the mixtures in the limit of zero density can be represented with the aid of the best available kinetic theory formulae, but not within their experimental uncertainty. The density dependence of the thermal conductivity of the mixtures is adequately described by a semi-empirical correlation scheme based on the modified Enskog theory.     

Gap opening in the zeroth Landau level in gapped graphene: pseudo-Zeeman splitting in an angular magnetic field

We present a theoretical study of gap opening in the zeroth Landau level in gapped graphene as a result of pseudo-Zeeman interaction. The applied magnetic field couples with the valley pseudospin degree of freedom of the charge carriers leading to the pseudo-Zeeman interaction. To investigate its role in transport at the charge neutrality point (CNP), we study the integer quantum Hall effect in gapped graphene in an angular magnetic field in the presence of pseudo-Zeeman interaction. Analytical expressions are derived for the Hall conductivity using the Kubo-Greenwood formula. We also determine the longitudinal conductivity for elastic impurity scattering in the first Born approximation. We show that pseudo-Zeeman splitting leads to a minimum in the collisional conductivity at high magnetic fields and a zero plateau in the Hall conductivity. Evidence for activated transport at CNP is found from the temperature dependence of the collisional conductivity.     

Model for heat conduction in nanofluids

A comprehensive model has been proposed to account for the large enhancement of thermal conductivity in nanofluids and its strong temperature dependence, which the classical Maxwellian theory has been unable to explain. The dependence of thermal conductivity on particle size, concentration, and temperature has been taken care of simultaneously in our treatment. While the geometrical effect of an increase in surface area with a decrease in particle size, rationalized using a stationary particle model, accounts for the conductivity enhancement, a moving particle model developed from the Stokes-Einstein formula explains the temperature effect. Predictions from the combined model agree with the experimentally observed values of conductivity enhancement of nanofluids.