Self-trapping of interacting electrons in crystalline nonlinear chains

Considering the nonlinearity arising from the interaction between electrons and latticevibrations, an effective electronic model with a self-interaction cubic term is employedto study the interplay between electron-electron and electron-phonon interactions. Basedon numerical solutions of the time-dependent nonlinear Schroedinger equation for aninitially localized two-electron singlet state, we show that the magnitude of theelectron-phonon coupling χ necessary to promote the self-trapping of theelectronic wave packet decreases as a function of the electron-electron interactionU. We show that such dependence is directly linked to the narrowing ofthe band of bounded two-electron states as U increases. We obtain thetransition line in the χ × U parameter space separatingthe phases of self-trapped and delocalized electronic wave packets. The present resultsindicates that nonlinear contributions plays a relevant role in the electronic wave packetdynamics, particularly in the regime of strongly correlated electrons.     

Self-trapping of electrons in vortex rings in liquid helium

A model according to which “fast” and “exotic” negative ions in superfluid helium are the localized states of electrons in vortex rings has been presented. The quantization of radial and longitudinal motions of electrons inside the vortex core and the quantization of the vortex motion of liquid helium lead to the existence of a whole family of excited states of electron vortices, in qualitative agreement with the experiments on the mobility of exotic ions. The possibility of the verification of conclusions of the model in optical experiments has been considered.     

Photoluminescence in YbGa2Se4 and YbGa2Se4:Nd3+ single crystals

The excitation and photoluminescence spectra of YbGa₂Se₄ and YbGa₂Se₄:Nd³⁺ single crystals recorded at different temperatures and neodymium concentrations have been investigated. The photoluminescence spectrum exhibits intracenter luminescence lines of the Nd³⁺ ion in wavelength ranges of 0.804?C0.84, 0.88?C0.92, 0.96?C0.996, and 1.06?C1.12 ??m against a broadband emission background. These ranges are related, respectively, to the ⁴ F _5/2-⁴ I _9/2, ⁴ F _3/2-⁴ I _9/2, ⁴ F _5/2-⁴ I _11/2, and ⁴ F _3/2-⁴ I _11/2 transitions.     

Optical properties of Tl2In2Se3S layered single crystals

The optical properties of Tl₂In₂Se₃S layered single crystals have been analyzed using transmission and reflection measurements in the wavelength region between 500 and 1100 nm. The optical indirect transitions with a band gap energy of 1.96 eV and direct transitions with a band gap energy of 2.16 eV were determined from analysis of absorption data at room temperature. Dispersion of the refractive index is discussed in terms of the Wemple–DiDomenico single-effective-oscillator model. The refractive index dispersion parameters – oscillator energy, dispersion energy, oscillator strength and zero-frequency refractive index – were found to be 4.67 eV, 45.35 eV, 1.38 × 10¹⁴ m ^{? 2} and 3.27, respectively. Transmission measurements were also performed in the temperature range 10–300 K. As a result of temperature-dependent transmission measurements, the rate of change in the indirect band gap with temperature, i.e. γ = ?5.6 × 10^?4 eV/K, and the absolute zero value of the band gap energy, E _gi(0) = 2.09 eV, were obtained.     

Influence of Ge and Ag impurities on the thermal conductivity of semiconducting amorphous As2Se3

The thermal conductivity of amorphous semiconducting As₂Se₃ is studied in the temperature range from 100 to 300°K and the influence of germanium and silver impurities is shown. The mean free path of phonons is determined and the observed change of the thermal conductivity is explained by the change of the velocity of sound in amorphous As₂Se₂ containing germanium.Presented by L. toura at the Meeting on Electronic Structure, Optical and Transport Effects in Amorphous and Liquid Semiconductors, Prague, May 1965.The authors are indebted to Dr. J. urek and Ing. I. Turek from the Department of Technical Physics of the College of Transport Engineering in ilina for measuring the velocity of sound in the investigated materials and to Mrs M. Kaparová and J. Trepeová for their help in the experimental work.     

Trapping centers and their distribution in Tl2In2Se3S layered single crystals

Thermally stimulated current (TSC) measurements have been carried out on Tl₂In₂Se₃S layered single crystals in the temperature range of 10–175 K. The TSC spectra reveal the presence of two peaks (A and B). The electronic traps’ distributions have been analyzed by different light illumination temperature techniques. It was revealed that the obtained traps’ distribution can be described as an exponential one. The variations of one order of magnitude in the traps’ density for every 30 meV (A peak) and 59 meV (B peak) were estimated. Moreover, the mean activation energy, attempt-to-escape frequency, capture cross section and concentration of the traps were determined.     

Behaviour of ultrasonic velocities in amorphous Se90Ge10 and Se85Ge15 alloys near their glass transition

Precise measurements of 10 MHz frequency longitudinal and shear wave velocities are reported in amorphous SeGe alloys near their glass transition temperature T _g . There is a sharp decrease of the velocities near T _g , but the reduction in velocities appears smaller than expected.     

Specific heat of single phase Nb3Ge

For the first time, the specific heat of single phase, stoichiometric, high transition temperature (21.8 K) A-15 Nb₃Ge has been measured. From the data between 4 and 29 K, the linear term coefficient, γ, of the specific heat is found to be 30.3±1. mJ/mole-K² and the Debye temperature, ?_D, is 302±2 K. The bulk energy gap parameter, 2Δ/kT_c, is found to be 4.2±0.2, in agreement with tunneling measurements.     

Nonisothermal relaxation and electromigration in single crystals of Ca3Ga2Ge4O14

The photoconductivity and electrical conductivity, the thermally stimulated polarization and depolarization currents, the permittivity, and the dielectric losses of noncentrosymmetric Ca₃Ga₂Ge₄O₁₄ crystals of a structural type of trigonal calcium gallogermanate (CGG) have been studied for the first time in the temperature interval 100–700 K in air and in vacuum. The features of the temperature behavior of CGG are associated, in particular, with the effect of electrically active defects and partial disordering of the cation sublattice of the crystal structure, which generates polar formations (dipoles) of several kinds. Certain parameters of the electromigration and of the electrically active defects that cause charge-relaxation and polarization effects are determined. It is concluded that dipole relaxation in CGG makes it a new representative of a class of materials in which reorientation of the dipoles as a system of mobile local distortions of the structure has a substantial effect on the physical properties. Fiz. Tverd. Tela (St. Petersburg) 39, 871–876 (May 1997)     

Frequency dependent conductivity in As2Se3 and As2Se3 + 15% Sb

Dc and ac measurements were performed on bulk samples of undoped and 15% Sb doped As₂Se₃ as a function of temperature (90–400 K) and frequency (10³–10⁶ Hz). The dc results show an activated conductivity dependence on temperature with an activation energy of 0.8 eV above room temperature. The ac results give a temperature dependent frequency exponent s. The temperature dependence of G _ac is discussed in terms of the mechanisms involved. Results are compared with the predictions of the Quantum Mechanical Tunnelling and Correlated Barrier Hopping models. It is found that doping increases the dc conductivity but has no effect on the ac conductivity.     

Quenching by electric fields of the luminescence of As2Se3 single crystals

High electric fields reduce the luminescence of As₂Se₃ at 77 K and increase simultaneously the photoconductivity. Comparison of both effects points to excitons as the source for emission of light whereas free carriers contributing to photoconductance recombine non radiatively. The field affects free excitons and their thermalization but does not ionize excitons trapped in radiative centres. At low excitation energy, in the range of indirect transitions, the field quenching of luminescence obeys a Poole-Frenkel behaviour. Such interpretation yields an exciton binding energy of 50 meV. The quantum efficiency of luminescence decreases to higher photon energy. Part of this decrease is related to an increase of the photoconductivity.     

Spectroscopy of Sm3+ activator centers in Ca3Ga2Ge4O14 single crystals

Results of investigations of spectroscopic properties of Ca₃Ga₂Ge₄O₁₄ single crystals activated with Sm³⁺ ions are reported. It is shown that Sm³⁺ ions in Ca₃Ga₂Ge₄O₁₄ form a type of activator quasicenter whose nature is associated with disordering of the matrix. I. Franko Lvov State University, 50, Dragomanov St., Lvov, Ukraine. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 65, No. 2, pp. 296–298, March–April, 1998.     

A special triple point in non-centrosymmetric materials Zn3In2Se6 and In2Se3

We predict that the non-centrosymmetric materials Zn₃In₂Se₆ and In₂Se₃ are the symmetry protected topological critical triple point metals based on first principles calculation. The dispersion along the Γ-Z line almost vanishes because of the particular crystal structure, and the strain along the c direction maybe drives accidental Dirac point to triple point. An effective theory is developed to describe accidental Dirac points and triple points, by which we calculate the surface states. These materials provide us a new platform to discuss the relation between the triple points and Dirac points.     

Piezobirefringence in γ1-(GaxIn1−x )2Se3 single crystals

The piezobirefringence of uniaxial γ₁-(Ga_xIn_1−x )₂Se₃ crystals (x=0.3, 0.4) was investigated in the spectral range 0.6–1.1 μm at temperatures from 77 to 295 K. It is shown that uniaxial compression leads to a linear decrease in the birefringence, whereas a decrease in temperature reduces the effect of piezobirefringence. The baric changes in the birefringence are attributed to the baric changes in the contribution of the edge transitions to the total birefringence. __________ Translated from Optika i Spektroskopiya, Vol. 95, No. 3, 2003, pp. 458–461. Original Russian Text Copyright ? 2003 by Studenyak, Kran’chets, Suslikov, Kovach.