直拉法生长的GGG和YAG单晶体中螺型位错的双折射像

在直拉法生长的GGG和YAG单晶体中,从实验上首次获得了沿位错线观察的(viewed end-on)螺型位错的双折射像,确立了沿位错线观察和垂直于位错线观察(viewed from the side)的双折射像间的一一对应关系,以及与蚀斑间的一一对应关系,并基于石榴石晶体弹-光性质的各向异性,给出了沿位错线观察的螺型位错双折射像的成像规律,得到了理论与实验一致的结果。 关键词：     

LPE-like growth of YIG ferrimagnetic thin films by pulsed laser ablation with molten droplets

Yttrium iron garnet (YIG) films were grown by pulsed laser ablation (PLA) on (111) Gadolinium Gallium Garnet (GGG) substrates. The second harmonic of YAG laser (532 nm) with a high laser fluence was employed to produce YIG droplets efficiently. It was found that YIG films prepared at RT substrates have a large number of solidified droplets of various sizes. Highly oriented YIG crystals were grown on the (111) GGG substrate heated at 860 °C by PLA using a large number of molten droplets, suggesting an LPE-like growth. This YIG film shows a small ferrimagnetic resonance linewidth of 7.5 Oe. This value is quite small for films prepared by vapor-phase epitaxy techniques.     

Advances in electron emission channeling measurements in semiconductors

This paper reports on recent advances in the application of electron emission channeling to studies of the lattice location of radioactive probe atoms in semiconductors. The introduction of position-sensitive electron detection has resulted in an improvement in the experimental efficiency of this method by two orders of magnitude. Electron emission channeling now is able to carry out detailed lattice location studies, and is especially interesting for cases where conventional ion beam lattice location techniques cannot be applied due to a lack of sensitivity. Characteristic features of electron emission channeling with position-sensitive detection are discussed and illustrated by results on the lattice location of Er in Si and GaAs, and on the lattice sites and stability of implanted transition metals in Si. This revised version was published online in July 2006 with corrections to the Cover Date.     

Emission channeling

Hyperfine interaction techniques like Mössbauer effect or perturbed angular correlation are commonly applied to study the structure and properties of impurity-defect complexes in solids. It is often difficult to resolve a certain defect structure unambiguously with these techniques, because an absolute determination of the lattice site of the probe atoms is not straight-forward. The emission channeling technique allows the direct determination of lattice sites of radioactive impurity atoms, incorporated into single crystalline solids. The channeling effects of electrons, positrons or alpha particles, emitted from radioactive impurities are measured along different crystal axes and planes. From the measured anisotropic emission distributions the lattice sites of the emitting atoms can be determined. Emission channeling can be applied to a large variety of different probe atoms. Also, rather low impurity concentrations, comparable to those typically required for hyperfine interaction techniques, are sufficient. In this contribution, the principles of the emission channeling technique, the experimental requirements and the quantitative analysis of emission channeling spectra are reviewed. The capabilities and possibilities, which the emission channeling technique offers, are highlighted by three recent experimental studies. First, studies of the diffusion of Ag in CdTe using transmutation doping with the electron emitting isotopes^107mAg and^109mAg are described. Second, lattice location studies of As in diamond, which is a potential n-type dopant in this material, will be discussed. Third, an experiment is described to study the lattice location of oversized impurities after low dose implantation into Fe. In this experiment, the unique decay properties of²²¹Fr and²²¹ Ra are utilized to determine the lattice sites of five different impurity atoms in a single emission channeling measurement.     

Recent Emission Channeling Studies in Wide Band Gap Semiconductors

We present results of recent emission channeling experiments on the lattice location of implanted Fe and rare earths in wurtzite GaN and ZnO. In both cases the majority of implanted atoms are found on substitutional cation sites. The root mean square displacements from the ideal substitutional Ga and Zn sites are given and the stability of the Fe and rare earth lattice location against thermal annealing is discussed.     

高压下Gd3Ga5O12晶体的弹性性能

 利用超声“脉冲回波重合法”技术,测定了立方晶体镱镓石榴石（GGG）各对称方向的超声波声速,及它们在流体静压力和单轴应力条件下,随压力的变化,计算了GGG的二阶和三阶弹性常数。它们分别是：c₁₁=3.04,c₁₂=1.31,c₄₄=0.94和c₁₁₁=-17.97,c₁₁₂=-12.86,c₁₂₃=-1.06,c₁₄₄=-2.11,c₁₆₆=-3.29,c₄₅₆=-0.94,单位是10¹¹ N/m²。根据这些数据,我们还计算了GGG晶体的德拜温度以及沿它的[001]→[111]→[110]→[100]传播的三个声学波分支（一个纵波,两个横波）的Gruneisen参数γ(p,N)的分布。     

Damage induced in garnets by heavy ion irradiations: a study by optical spectroscopies

The damage induced by heavy-ion irradiation has been studied in yttrium iron garnet (Y₃Fe₅O₁₂ or YIG) films, doped with Ca, Tb and Tm, grown by liquid-phase epitaxy on gadolinium gallium garnet (Gd₃Ga₅O₁₂ or GGG) substrates. Irradiations of doped-YIG epitaxial films and GGG substrates with 36-MeV ¹⁸³W and 12-MeV ¹⁹⁷Au ions were applied for fluences between 1 × 10¹³ and 3 × 10¹⁵ cm^–2 near room temperature. The radiation damage was monitored by micro-Raman spectroscopy and UV–visible optical absorption spectroscopy. Raman spectra revealed that amorphisation was achieved in YIG for both ions, whereas a high lattice disorder was induced in GGG without reaching amorphisation for the Au ion irradiation. Raman spectra also showed that a major damage of the tetrahedral sites was induced in GGG, as previously found for YIG. It is concluded that with such ions reaching the stopping power threshold of track formation in YIG and GGG the observed rate of amorphisation may result from a combination of electronic and nuclear energy losses as calculated using the unified thermal spike model.     

Chaotic behavior of channeling particles

Channeling describes the collimated motion of energetic charged particles along the lattice plane or axis in a crystal. The energetic particles are steered through the channels formed by strings of atomic constituents in the lattice. In the case of planar channeling, the motion of a charged particle between the atomic planes can be periodic or quasiperiodic, such as a simple oscillatory motion in the transverse direction. In practice, however, the periodic motion of the channeling particles can be accompanied by an irregular, chaotic behavior. In this paper, the Moliere potential, which is considered as a good analytical approximation for the interaction of channeling particles with the rows of atoms in the lattice, is used to simulate the channeling behavior of positively charged particles in a tungsten (100) crystal plane. By appropriate selection of channeling parameters, such as the projectile energy E(0) and incident angle psi(0), the transition of channeling particles from regular to chaotic motion is demonstrated. It is argued that the fine structures that appear in the angular scan channeling experiments are due to the particles' chaotic motion.     

Direct evidence for As as a Zn-site impurity in ZnO

Arsenic has been reported in the literature as one of the few p-type dopants in the technologically promising II-VI semiconductor ZnO. However, there is an ongoing debate whether the p-type character is due to As simply replacing O atoms or to the formation of more complicated defect complexes, possibly involving As on Zn sites. We have determined the lattice location of implanted As in ZnO by means of conversion-electron emission channeling from radioactive (73)As. In contrast to what one might expect from its nature as a group V element, we find that As does not occupy substitutional O sites but in its large majority substitutional Zn sites. Arsenic in ZnO (and probably also in GaN) is thus an interesting example for an impurity in a semiconductor where the major impurity lattice site is determined by atomic size and electronegativity rather than its position in the periodic system.     

The influence of oxygen on the lattice sites of rare earths in silicon

We have used conversion electron emission channeling to investigate the lattice sites of ^167mEr following implantation of the radioactive isotope ¹⁶⁷Tm into CZ Si and FZ Si at varying doses (6×10¹² – 5×10¹³ cm⁻²). In all cases isothermal annealing at 900°C caused Er to leave its preferred near-tetrahedral sites in favour of random lattice sites, but this process occurred by orders of magnitude faster in CZ Si. Furthermore, in CZ Si the incorporation of Er on random lattice sites was fastest in samples implanted with low doses of Tm+Er. We compare our experimental results to a simple numerical model which accounts for the diffusion of Er and O and the formation of Er_nO_m complexes. On the basis of this model, our experimental data indicate that only a few (probably between 1 and 2) O atoms are required in order to remove an Er atom from its tetrahedral site.     

On the contribution of secondary fluorescence to the Fe signal in proton-induced X-ray emission channeling measurements of Fe-doped GaN

We present an experimental investigation of the contribution of secondary fluorescence to the iron signal in proton-induced X-ray emission (PIXE) channeling measurements of Fe-doped GaN layers. A method for the analysis of the PIXE angular scans has been developed, which is necessary for the correct quantification of the lattice site occupation of the Fe atoms in the GaN matrix. This approach should be taken into account any time the lattice location of small amounts of substitutional impurities has to be measured by PIXE channeling in analogous experimental conditions.     

Efficiency and temporal response of crystalline Kerr media in collinear optical Kerr gating

Optical Kerr gating is widely used in ultrafast measurements ranging from pulse characterization to spectroscopy and microscopy. We examined the efficiency and the temporal response of three cubic lattice Kerr media, YAG, GGG and BGO, and compared them with the well studied fused silica (fast response, low efficiency) and STO (high efficiency, slow response). YAG and GGG emerged as superior materials for ultrafast spectroscopy and microscopy applications thanks to their fast Kerr response and considerably higher gating efficiency than silica at low gating energies. Importantly, it was found that in collinear geometry all tested materials except STO are capable of reaching nearly 100% transmission.     

Lattice location and stability of ion implanted Cu in Si

We report on the lattice location of ion implanted Cu in Si using the emission channeling technique. The angular distribution of beta(-) particles emitted by the radioactive isotope 67Cu was monitored following room temperature implantation into Si single crystals and annealing up to 600 degrees C. The majority of Cu was found close to substitutional sites, however, with a significant displacement, most likely 0.50(8) A along the <111> directions towards the bond center position. The activation energy for the dissociation of near-substitutional Cu is estimated to be 1.8-2.2 eV.     

Structural defect recovery in GaP after heavy ion implantation

The channeling and blocking effect of electrons and positrons emitted in nuclear decay allows the lattice site location of radioactive impurities implanted into single crystals at small concentrations (ppm) and low implantation fluences (10¹²/cm²). We applied this emission channeling technique to the localization of ^112mIn and ^111mCd after implantation into si-GaP single crystals at different temperatures. After implantation at low temperature and subsequent annealing an increase of the fraction of substitutional probe atoms and a recovery of the local lattice structure between 300 and 500 K were observed. GaP tends to anneal at higher temperatures than GaAs (200–350 K), but compared to GaAs the channeling effects observed in GaP are more pronounced, indicating a more complete recovery of implantation defects.     

Lattice Location Studies of Indium in Cr2O3

The lattice sites of implanted In atoms in Cr₂O₃ were investigated by means of electron emission channeling (EC) measurements using ¹¹¹In probe atoms. EC spectra were recorded for several axes and compared to simulations. Indium atoms are most likely located at near-Cr sites. Small differences in the EC patterns for prompt and delayed electrons may be an indication for displacements of ¹¹¹Cd emitter atoms following the electron capture decay of In. This revised version was published online in September 2006 with corrections to the Cover Date.     

Pulsed electron beam annealing and furnace annealing of Cu-implanted Al single crystals

A comparison has been performed of the effects of pulsed electron beam annealing (PEBA) and furnace annealing on the distribution and lattice site occupation of Cu implanted into Al single crystals. Both parameters have been determined by Rutherford backscattering and channeling measurements with 2 MeV He⁺ ions. With furnace annealing at 300°C the Cu diffusion into the bulk was determined by the release process from the implanted layer, while for PEBA a redistribution of the copper was observed for pulses with deposited energy densities above the threshold for melting. A supersaturated solid solution with 95% (2.1 at.%) of the impurity atoms on substitutional sites was formed by the electron beam treatment. After thermal annealing only little improvement of the lattice site occupation was observed with 66% of the impurities atoms on lattice sites, however with slight displacements from the perfect positions.     

Displacement of b atoms by low temperature irradiation of Si-0.2% B crystals

The irradiation-induced displacement of B atoms from lattice sites in Si-0.2% B crystals has been measured by ion channeling. The results indicate that the displacement caused by 35 K irradiation with 0.7 MeV H⁺ is due to trapping of Si interstitials by B atoms, while the displacement caused by subsequent annealing between 200 and 300 K is due to migration of B interstitials and/or B-vacancy pairs.     

晶格失配应力对单晶(BiTm)_3(GaFe)_5O_(12)膜磁畴结构的影响

利用液相外延工艺在钆镓石榴石衬底上制得了单晶(BiTm)_3(GaFe)_5O_(12)膜,研究了晶格失配应力对其磁畴结构的影响.研究发现,生长速率越快,膜的晶格常数越大;晶格失配应力可以在一定范围内调整膜的垂直各向异性;随着晶格失配应力由较大张应力逐渐转变为较大压应力,磁畴形状先由磁泡畴转变成迷宫畴,然后转变为过渡态部分弯曲的条状畴,最终转变为整齐排列的条状畴;失配应力同时对畴宽也有影响,膜受到的失配应力越大,畴宽越大.这一实验研究对基于控制晶格失配应力来调控单晶膜的各向异性和磁畴结构有指导意义.     

Impurity lattice location and recovery of structural defects in semiconductors studied by emission channeling

Doping of semiconductors by ion implantation usually requires implantation doses below 10¹³ cm^–2 to obtain typical impurity concentrations of <10¹⁸ cm^–3. The lattice location of impurities as well as the defect recovery after such low dose implantations can be studied using the emission channeling technique. In this technique, single crystals are doped with radioactive probe atoms and the channeling effects of electrons, positrons or -particles emitted from these atoms are measured. We present a quantitative analysis of electron emission channeling measurements after heavy-ion implantation into Si and III–V compound semiconductors by comparison with calculated channeling profiles based on the dynamical theory of electron diffraction. For In atoms implanted into Si, complete substitutionality was found after rapid thermal annealing to 1200 K. For lower annealing temperatures, the observed channeling effects indicate small mean displacements (of about 0.2 Å) of the In atoms from substitutional sites, caused by residual implantation defects. For GaAs, GaP and InP implanted at low temperatures with In or Cd isotopes, pronounced recovery stages around 300, 400 and 350 K, respectively, were observed and substitutional fractions close to 100% were derived after annealing above the stage.     

Coherent Schwinger interaction from Darboux transformation

The exactly solvable scalar-tensor potential of the four-component Dirac equation has been obtained by the Darboux transformation method. The constructed potential has been interpreted in terms of nucleon-nuclear and Schwinger interactions of neutral particles with lattice sites during their channeling in the nonmagnetic crystal. The family of exactly solvable interaction Hamiltonians of a Schwinger type is obtained by means of the Darboux transformation chain. The analytic structure of the Lyapunov function of periodic continuation for each of the Hamiltonians of the family is considered.