Dynamic spin-polarized shot noise in a quantum dot coupled to ferromagnetic terminals under the perturbation of ac fields

We have investigated the shot noise in the mesoscopic system composed of a quantum dot (QD) coupled to ferromagnetic terminals under the perturbation of ac fields. The shot noise has been derived using the nonequilibrium Green's function (NGF) technique to describe the spin polarization effect along with photon absorption and emission processes in the Coulomb blockade regime. We have examined the influence of spin polarization on the shot noise under the perturbation of ac fields in the nonadiabatic regime. The Coulomb blockade effect results in the modification of shot noise compared with the noninteracting case. The spin orientation contributes a spin valve effect for controlling electron tunnelling through this QD, and different resonant forms appear around the Coulomb blockade channel. The photon-assisted spin-splitting and spin-polarization effect contributes a photon-assisted spin valve to adjust the electron tunnelling current and shot noise. The spin-polarization effect varies the value of the Fano factor. However, it does not change the noise type from sub-Poissonian to super-Poissonian.     

Coulomb blockade in an open quantum dot

We report the observation of Coulomb blockade in a quantum dot contacted by two quantum point contacts each with a single fully transmitting mode, a system thought to be well described without invoking Coulomb interactions. Below 50 mK we observe a periodic oscillation in the conductance of the dot with gate voltage, corresponding to a residual quantization of charge. From the temperature and magnetic field dependence, we infer the oscillations are mesoscopic Coulomb blockade, a type of Coulomb blockade caused by electron interference in an otherwise open system.     

Blockade of tunneling in a suspended single-electron transistor

The tunneling of electrons that is limited by the Coulomb blockade effect in a single-electron transistor with a quantum dot based on a narrow GaAs/AlGaAs quantum wire suspended over a substrate is investigated. By means of a direct comparison experiment, the tunneling features associated with the separation of the quantum dot from the substrate are revealed. In addition to an increase in the charge energy (Coulomb gap), which reaches 170 K in temperature units, the dependence of this energy on the number of electrons in the quantum dot, which varies from zero to four, is observed. This dependence is explained by a change in the effective size of the dot due to the effect of the depleting gate voltage. Moreover, the additional blockade of tunneling that is different from the Coulomb blockade and is specific for suspended structures is observed. It is shown that this blockade is not associated with the dynamical effect of exciting local phonon modes and can be attributed to the change in the static elastic strains in the quantum wire that accompany the tunneling of an electron to/from the quantum dot.     

Coulomb blockade without potential barriers

We study transport through a strongly correlated quantum dot and show that Coulomb blockade can appear even in the presence of perfect contacts. This conclusion arises from numerical calculations of the conductance for a microscopic model of spinless fermions in an interacting chain connected to each lead via a completely open channel. The dependence of the conductance on the gate voltage shows well defined Coulomb blockade peaks which are sharpened as the interaction strength is increased. Our numerics is based on the embedding method and the DMRG algorithm. We explain the emergence of Coulomb blockade with perfect contacts by a reduction of the effective coupling matrix elements between many-body states corresponding to successive particle numbers in the interacting region. A perturbative approach, valid in the strong interaction limit, yields an analytic expression for the interaction-induced suppression of the conductance in the Coulomb blockade regime.     

Kondo effect in quantum dots at high voltage: universality and scaling

We examine the properties of a dc-biased quantum dot in the Coulomb blockade regime. For voltages V that are large compared to the Kondo temperature T(K), the physics is governed by the scales V and gamma, where gamma approximately V/ln(2)(V/T(K)) is the nonequilibrium decoherence rate induced by the voltage-driven current. Based on scaling arguments, self-consistent perturbation theory, and perturbative renormalization group, we argue that due to the large gamma the system can be described by renormalized perturbation theory in 1/ln(V/T(K))<1. However, in certain variants of the Kondo problem, two-channel Kondo physics is induced by a large voltage V.     

Detection of single spin decoherence in a quantum dot via charge currents

We consider a quantum dot attached to leads in the Coulomb blockade regime that has a spin 1 / 2 ground state. We show that, by applying an ESR field to the dot spin, the stationary current in the sequential tunneling regime exhibits a new resonance peak whose linewidth is determined by the single spin decoherence time T2. The Rabi oscillations of the dot spin are shown to induce coherent current oscillations from which T2 can be deduced in the time domain. We describe a spin inverter which can be used to pump current through a double dot via spin flips generated by ESR.     

Shot noise in a quantum dot coupled to non-magnetic leads: effects of Coulomb interaction

We study electron transport through a quantum dot, connected to non-magnetic leads, in a magnetic field. A super-Poissonian electron noise due to the effects of both interacting localized states and dynamic channel blockade is found when the Coulomb blockade is partially lifted. This is sharp contrast to the sub-Poissonian shot noise found in the previous studies for a large bias voltage, where the Coulomb blockade is completely lifted. Moreover, we show that the super-Poissonian shot noise can be suppressed by applying an electron spin resonance (ESR) driving field. For a sufficiently strong ESR driving field strength, the super-Poissonian shot noise will change to be sub-Poissonian.     

Transconductance of a double quantum dot system in the Kondo regime

We consider a lateral double-dot system in the Coulomb blockade regime with a single spin-1/2 on each dot, mutually coupled by an antiferromagnetic exchange interaction. Each of the two dots is contacted by two leads. We demonstrate that the voltage across one of the dots will have a profound influence on the current passing through the other dot. Using poor man's scaling, we find that the Kondo effect can lead to a strong enhancement of this transconductance.     

Single-electron tunneling in silicon nanostructures

We present a brief overview on different realizations of single-electron devices fabricated in silicon-on-insulator films. Lateral structuring of highly doped silicon films allows us to observe quasi-metallic Coulomb blockade oscillations in shrunken wires where no quantum dot structure is geometrically defined. Embedding quantum dot structures into the inversion channel of a silicon-on-insulator field-effect transistor Coulomb blockade up to 300 K is observed. In contrast to the quasi-metallic structures, in these devices the influence of the quantum mechanical level spacing inside the dot becomes visible. Suspending highly doped silicon nanostructures leads to a novel kind of Coulomb blockade devices allowing both high-power application as well as the study of electron–phonon interaction. Received: 14 April 2000 / Accepted: 17 April 2000 / Published online: 6 September 2000     

Electron cotunneling in a semiconductor quantum dot

We report transport measurements on a semiconductor quantum dot with a small number of confined electrons. In the Coulomb blockade regime, conduction is dominated by cotunneling processes. These can be either elastic or inelastic, depending on whether they leave the dot in its ground state or drive it into an excited state, respectively. We are able to discriminate between these two contributions and show that inelastic events can occur only if the applied bias exceeds the lowest excitation energy. Implications to energy-level spectroscopy are discussed.     

Single-shot detection of electrons generated by individual photons in a tunable lateral quantum dot

We demonstrate single-shot detection of single electrons generated by single photons using an electrically tunable quantum dot and a quantum point contact charge detector. By tuning the quantum dot in a Coulomb blockade before the photoexcitation, we observe the trapping and subsequent resetting of single photogenerated electrons. The photogenerated electrons can be stored in the dot for a tunable time range from shorter to longer than the spin-flip time T1. We combine this trap-reset technique with spin-dependent tunneling under magnetic fields to observe the spin-dependent photon detection within the T1.     

Electronic transport in graphene nanostructures on SiO2

We report two experiments on graphene nanostructures. The first was performed on a graphene nanoribbon, where the nature of electronic transport was investigated in detail. Electrons or holes are found to localize in pockets of the potential along the ribbon. Transport is governed by the joint action of localization and Coulomb interaction. The temperature-dependence of the conductance shows activated behavior at temperatures above a few Kelvin. The activation energy retraces the edges of Coulomb blockade diamonds found in nonlinear transport. In the second experiment the metallic tip of a low-temperature scanning force microscope was scanned above a graphene quantum dot. In addition to the familiar Coulomb blockade fringes, localized states are detected forming in the constrictions connecting the dot to source and drain.     

Transport properties of a single-quantum dot Aharonov-Bohm interferometer

We consider a two-terminal Aharonov-Bohm (AB) interferometer with a quantum dot inserted in one path of the AB ring. We investigate the transport properties of this system in and out of the Kondo regime. We utilize perturbation theory to calculate the electron self-energy of the quantum dot with respect to the intradot Coulomb interaction. We show the expression of the Kondo temperature as a function of the AB phase together with its dependence on other characteristics such as the linewidth of the ring and the finite Coulomb interaction and the energy levels of the quantum dot. The current oscillates periodically as a function of the AB phase. The amplitude of the current oscillation decreases with increasing Coulomb interaction. For a given temperature, the electron transport through the AB interferometer can be selected to be in or out of the Kondo regime by changing the magnetic flux threading perpendicular to the AB ring of the system.     

Photon-assisted shot noise due to the charging effect in a quantum dot device

We have investigated the spectral density of shot noise for an ultra-small quantum dot(QD) system in the Coulomb blockade regime when irradiated with microwave fields (MWFs) by employing a nonequilibrium Green’s function technique. The shot noise is sensitive to Coulomb interaction, and the photon-assisted Coulomb blockade behaviour strongly modifies the mesoscopic transport. We have calculated the first and second derivatives of shot noise in the strong and weak coupling regimes to compare the theoretical results with existing experimental results. In the strong coupling regime, the first and second derivatives of shot noise display Fano type peak-valley structures around the charging channel 2E _c due to Coulomb interaction. When the magnitudes of the MWFs are sufficiently large, the system displays channel blockade due to photon irradiation. The photon-assisted and Coulomb blockade steps in the noise — as well as the resonant behaviour in the differential noise — are smeared by increasing temperature. The Coulomb interaction suppresses the shot noise, but the ac fields can either suppress the shot noise(balanced case) or enhance the shot noise(unbalanced case). The suppression of shot noise caused by ac fields in the balanced case is greater than that caused by Coulomb interaction in our system. Super-Poissonian shot noise may be induced due to the compound effects of strong Coulomb interaction and photon absorption-emission processes.     

Signature of Kondo effect in silicon quantum dots

We report observation of the Kondo effect in the Coulomb blockade oscillations of an impurity quantum dot (IQD). This IQD is formed in the channel of a 100 nm gate length Silicon MOSFET. The quantitative analysis of the anomalous temperature and voltage dependence for the drain-source current over a series of Coulomb blockade oscillations is performed. It strongly supports the Kondo explanation for the conductance behavior at very low temperature in this standard microelectronics device. Received 13 November 2001 and Received in final form 18 February 2002     

Coupling a quantum dot, fermionic leads, and a microwave cavity on a chip

We demonstrate a hybrid architecture consisting of a quantum dot circuit coupled to a single mode of the electromagnetic field. We use single wall carbon nanotube based circuits inserted in superconducting microwave cavities. By probing the nanotube dot using a dispersive readout in the Coulomb blockade and the Kondo regime, we determine an electron-photon coupling strength which should enable circuit QED experiments with more complex quantum dot circuits.     

Spin filters with Fano dots

We compute the zero bias conductance of electrons through a single ballistic channel weakly coupled to a side quantum dot with Coulomb interaction. In contrast to the standard setup which is designed to measure the transport through the dot, the channel conductance reveals Coulomb blockade dips rather then peaks due to the Fano-like backscattering. At zero temperature the Kondo effect leads to the formation of broad valleys of small conductance corresponding to an odd number of electrons on the dot. By applying a magnetic field in the dot region we find two dips corresponding to a total suppression in the conductance of spins up and down separated by an energy of the order of the Coulomb interaction. This provides a possibility of a perfect spin filter.Received: 6 November 2003, Published online: 2 April 2004PACS: 72.15.Qm Scattering mechanisms and Kondo effect - 73.23.Ad Ballistic transport - 72.25.-b Spin polarized transport     

Spacing and width of Coulomb blockade peaks in a silicon quantum dot

We present an experimental study of the fluctuations of Coulomb blockade peak positions of a quantum dot. The dot is defined by patterning the two-dimensional electron gas of a silicon MOSFET structure using stacked gates. The ratio of charging energy to single-particle energy is considerably larger than in comparable GaAs/AlGaAs quantum dots. The statistical distribution of the conductance peak spacings in the Coulomb blockade regime was found to be unimodal and does not follow the Wigner surmise. The fluctuations of the spacings are much larger than the typical single-particle level spacing and thus clearly contradict the expectation of random matrix theory. Measurements of the natural line width of a set of several adjacent conductance peaks suggest that all of the peaks in the set are dominated by electrons being transported through a single-broad energy level.     

电子关联效应对平行双量子点系统磁输运性质的影响

从理论上研究了平行双量子点系统中的电子关联效应对该系统磁输运性质的影响. 基于广义主方程方法, 计算了通过此系统的电流、微分电导和隧穿磁阻. 计算结果表明: 电子自旋关联效应可以促发一个很大的隧穿磁阻, 而电子库仑关联效应不仅可以压制电子自旋关联效应, 还可以导致负隧穿磁阻和负微分电导的出现. 对相关的基本物理问题进行了讨论.     

Detection of single-electron charging in an individual InAs quantum dot by noncontact atomic-force microscopy

Single-electron charging in an individual InAs quantum dot was observed by electrostatic force measurements with an atomic-force microscope (AFM). The resonant frequency shift and the dissipated energy of an oscillating AFM cantilever were measured as a function of the tip-back electrode voltage, and the resulting spectra show distinct jumps when the tip was positioned above the dot. The observed jumps in the frequency shift, with corresponding peaks in dissipation, are attributed to a single-electron tunneling between the dot and the back electrode governed by the Coulomb blockade effect, and are consistent with a model based on the free energy of the system. The observed phenomenon may be regarded as the "force version" of the Coulomb blockade effect.