Hole spin relaxation in Ge quantum dots

Hole spin relaxation in an isolated Ge quantum dot due to interaction with phonons is investigated. Spin relaxation in this case occurs through the mechanism of the modulation of the spin-orbit interaction by lattice vibrations. According to the calculations performed, the spin relaxation time due to direct single-phonon processes for the hole ground state equals 1.4 ms in the magnetic field H = 1 T at the temperature T = 4 K. The dependence of the relaxation time on the magnetic field is described by the power function H^?5. At higher temperatures, a substantial contribution to spin relaxation is made by two-phonon (Raman) processes. Because of this, the spin relaxation time decreases to nanoseconds as the temperature is raised to T = 20 K. Analysis of transition probabilities shows that the third and twelfth excited hole states, which are intermediate in two-step relaxation processes, play the main part in Raman processes.     

Optical nuclear spin polarization in quantum dots

Hyperfine interaction between electron spin and randomly oriented nuclear spins is a key issue of electron coherence for quantum information/computation. We propose an efficient way to establish high polarization of nuclear spins and reduce the intrinsic nuclear spin fluctuations. Here, we polarize the nuclear spins in semiconductor quantum dot(QD) by the coherent population trapping(CPT) and the electric dipole spin resonance(EDSR) induced by optical fields and ac electric fields. By tuning the optical fields, we can obtain a powerful cooling background based on CPT for nuclear spin polarization. The EDSR can enhance the spin flip–flop rate which may increase the cooling efficiency. With the help of CPT and EDSR, an enhancement of 1300 times of the electron coherence time can be obtained after a 10-ns preparation time.     

Anisotropy of spin splitting and spin relaxation in lateral quantum dots

Inelastic spin relaxation and spin splitting epsilon(s) in lateral quantum dots are studied in the regime of strong in-plane magnetic field. Because of both the g-factor energy dependence and spin-orbit coupling, epsilon(s) demonstrates a substantial nonlinear magnetic field dependence similar to that observed by Hanson et al. [Phys. Rev. Lett. 91, 196802 (2003)]. It also varies with the in-plane orientation of the magnetic field due to crystalline anisotropy of the spin-orbit coupling. The spin relaxation rate is also anisotropic, the anisotropy increasing with the field. When the magnetic length is less than the "thickness" of the GaAs dot, the relaxation can be an order of magnitude faster for B ||[100] than for B || [110].     

Knight-field-enabled nuclear spin polarization in single quantum dots

We demonstrate dynamical nuclear-spin polarization in the absence of an external magnetic field by resonant circularly polarized optical excitation of a single electron or hole charged quantum dot. Optical pumping of the electron spin induces an effective inhomogeneous magnetic (Knight) field that determines the direction along which nuclear spins could polarize and enables nuclear-spin cooling by suppressing depolarization induced by nuclear dipole-dipole interactions. Our experiments constitute a first step towards a quantum measurement of the Overhauser field.     

Field dependence of the electron spin relaxation in quantum dots

The interaction of the electron spin with local elastic twists due to transverse phonons is studied. The universal dependence of the spin-relaxation rate on the strength and direction of the magnetic field is obtained in terms of the electron gyromagnetic tensor and macroscopic elastic constants of the solid. The theory contains no unknown parameters and it can be easily tested in experiment. At high magnetic field it provides a parameter-free lower bound on the electron spin relaxation in quantum dots.     

Theory of phonon-induced spin relaxation in laterally coupled quantum dots

Phonon-induced spin relaxation in coupled lateral quantum dots in the presence of spin-orbit coupling is calculated. The calculation for single dots is consistent with experiment. Spin relaxation in double dots at useful interdot couplings is dominated by spin-hot spots that are strongly anisotropic. Spin-hot spots are ineffective for a diagonal crystallographic orientation of the dots with a transverse in-plane field. This geometry is proposed for spin-based quantum information processing.     

Effects of Coulomb interactions on spin states in vertical semiconductor quantum dots

The effects of direct Coulomb and exchange interactions on spin states are studied for quantum dots contained in circular and rectangular mesas. For a circular mesa a spin-triplet favored by these interactions is observed at zero and nonzero magnetic fields. We tune and measure the relative strengths of these interactions as a function of the number of confined electrons. We find that electrons tend to have parallel spins when they occupy nearly degenerate single-particle states. We use a magnetic field to adjust the single-particle state degeneracy, and find that the spin-configurations in an arbitrary magnetic field are well explained in terms of two-electron singlet and triplet states. For a rectangular mesa we observe no signatures of the spin-triplet at zero magnetic field. Due to the anisotropy in the lateral confinement single-particle state degeneracy present in the circular mesa is lifted, and Coulomb interactions become weak. We evaluate the degree of the anisotropy by measuring the magnetic field dependence of the energy spectrum for the ground and excited states, and find that at zero magnetic field the spin-singlet is more significantly favored by the lifting of level degeneracy than by the reduction in the Coulomb interaction. We also find that the spin-triplet is recovered by adjusting the level degeneracy with magnetic field. Received: 14 April 2000 / Accepted: 17 April 2000 / Published online: 6 September 2000     

Electron–phonon-induced spin relaxation in InAs quantum dots

We have calculated spin-relaxation rates in parabolic quantum dots due to the phonon modulation of the spin–orbit interaction in the presence of an external magnetic field. Both deformation potential and piezoelectric electron–phonon coupling mechanisms are included within the Pavlov–Firsov spin–phonon Hamiltonian. Our results have demonstrated that, in narrow gap materials, the electron–phonon deformation potential and piezoelectric coupling give comparable contributions to spin-relaxation processes. For large dots, the deformation potential interaction becomes dominant. This behavior is not observed in wide or intermediate gap semiconductors, where the piezoelectric coupling, in general, governs the spin-relaxation processes. We have also demonstrated that spin-relaxation rates are particularly sensitive to the Landé g-factor.     

Coulomb effects in semiconductor quantum dots

This paper presents a new model for the Internet graph (AS graph) based on the concept of heuristic trade-off optimization, introduced by Fabrikant, Koutsoupias and Papadimitriou in [5] to grow a random tree with a heavily tailed degree distribution. We propose here a generalization of this approach to generate a general graph, as a candidate for modeling the Internet. We present the results of our simulations and an analysis of the standard parameters measured in our model, compared with measurements from the physical Internet graph.Received: 9 February 2004, Published online: 14 May 2004PACS: 89.75.-k Complex systems - 89.75.Hc Networks and genealogical trees - 89.75.Da Systems obeying scaling laws - 89.75.Fb Structures and organization in complex systems - 89.65.Gh Economics; econophysics, financial markets, business and managementLRI: http: //www.lri.fr/~ihameli; CNRS, LIP, ENS Lyon : http: //www.ens-lyon.fr/~nschaban     

Coulomb blockade in molecular quantum dots

The rate-equation approach is used to describe sequential tunneling through a molecular junction in the Coulomb blockade regime. Such device is composed of molecular quantum dot (with discrete energy levels) coupled with two metallic electrodes via potential barriers. Based on this model, we calculate nonlinear transport characteristics (conductance-voltage and current-voltage dependences) and compare them with the results obtained within a self-consistent field approach. It is shown that the shape of transport characteristics is determined by the combined effect of the electronic structure of molecular quantum dots and by the Coulomb blockade. In particular, the following phenomena are discussed in detail: the suppression of the current at higher voltages, the charging-induced rectification effect, the charging-generated changes of conductance gap and the temperature-induced as well as broadening-generated smoothing of current steps.     

Role of orbital dynamics in spin relaxation and weak antilocalization in quantum dots

We develop a semiclassical theory for spin-dependent quantum transport to describe weak (anti)localization in quantum dots with spin-orbit coupling. This allows us to distinguish different types of spin relaxation in systems with chaotic, regular, and diffusive orbital classical dynamics. We find, in particular, that for typical Rashba spin-orbit coupling strengths, integrable ballistic systems can exhibit weak localization, while corresponding chaotic systems show weak antilocalization. We further calculate the magnetoconductance and analyze how the weak antilocalization is suppressed with decreasing quantum dot size and increasing additional in-plane magnetic field.     

Coulomb oscillations in partially open quantum dots

We report tunneling measurements of the Coulomb blockade in a single quantum dot at zero magnetic field and dilution refrigerator temperatures with weak tunneling from the dot to one lead (the ‘closed’ lead, conductanceG_closed) and strong tunneling to the other lead (the ‘open’ lead, conductanceG_open). We observe suppression of the Coulomb oscillations withG_open≈2e²/h, and then see the oscillations return forG_open>2e²/h. The oscillations show a strikingly lower threshold temperature atG_open≈2e²/hthan for greater or lesserG_open.     

Direct observation of the electron spin relaxation induced by nuclei in quantum dots

We have studied the electron spin relaxation in semiconductor InAs/GaAs quantum dots by time-resolved optical spectroscopy. The average spin polarization of the electrons in an ensemble of p-doped quantum dots decays down to 1/3 of its initial value with a characteristic time T(Delta) approximately 500 ps, which is attributed to the hyperfine interaction with randomly oriented nuclear spins. We show that this efficient electron spin relaxation mechanism can be suppressed by an external magnetic field as small as 100 mT.     

Weak Coulomb blockade effect in quantum dots

We develop the general nonequilibrium theory of transport through a quantum dot, including Coulomb blockade effects via a 1/N expansion, where N is the number of scattering channels. At lowest order we recover the Landauer formula for the current plus a self-consistent equation for the dot potential. We obtain the leading corrections and compare with earlier approaches. Finally, we show that to leading and to next leading order in 1/N there is no interaction correction to the weak localization, in contrast to previous theories, but consistent with experiments by Huibers et al. [Phys. Rev. Lett. 81, 1917 (1998)], where N=4.     

Geometrical spin dephasing in quantum dots

We study spin-orbit mediated relaxation and dephasing of electron spins in quantum dots. We show that higher order contributions provide a relaxation mechanism that dominates for low magnetic fields and is of geometrical origin. In the low-field limit relaxation is dominated by coupling to electron-hole excitations and possibly 1/f noise rather than phonons.     

Electrical control of hole spin relaxation in charge tunable InAs/GaAs quantum dots

We report on optical orientation of singly charged excitons (trions) in charge-tunable self-assembled InAs/GaAs quantum dots. When the charge varies from 0 to -2, the trion photoluminescence of a single quantum dot shows up and under quasiresonant excitation gets progressively polarized from zero to approximately 100%. This behavior is interpreted as the electric control of the trion thermalization process, which subsequently acts on the hole-spin relaxation driven in nanosecond time scale by the anisotropic electron-hole exchange. This is supported by the excitation spectroscopy and time-resolved measurements of a quantum dot ensemble.     

Exciton relaxation in PbS quantum dots

Exciton relaxation in PbS quantum dots (QDs) in glass and tetrachloroethylene have been investigated and the radiative and non‐radiative relaxation rates of the lowest 1S–1S state have been measured. An estimate of the carrier intra‐band transition rates and their transfer efficiency is calculated. The dependence of the exciton dynamics on the QD surface properties is presented and discussed. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)