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1.
We report on structural change in an Au^3+-doped BK7 glass irradiated by an infrared femtosecond laser at 800 nm. A grating structure is inscribed in the glass sample. The glass sample is then annealed at various temperatures. Structural change of the grating is observed by an optical microscope. Absorption spectra indicate that colour centres are induced after the laser irradiation, and they decrease with increasing annealing temperature. Au nanoparticles are precipitated at high temperatures (≥ 600℃). The mechanisms of the phenomena are discussed.  相似文献   

2.
姜雄伟  邱建荣  曾惠丹  朱从善 《中国物理》2003,12(12):1386-1389
This paper studies the phenomenon of long-lasting phosphorescence induced by a femtosecond laser in Pr3 -doped ZnO-B2O3-SiO2 glass. With the glass irradiated by a focused femtosecond laser for a short time, the emission of strong reddish long-lasting phosphorescence from the irradiated part of the glass can be observed. The emission peaks are located at 495 and 603 nm in wavelength, showing that the long-lasting phosphorescence originates from the emission of Pr^3 . The intensity of the phosphorescence decreases in inverse proportion to time after the removal of the laser. By analysing the absorption and electron spin resonance spectra of the glass, we find that colour-centres are induced in the glass matrix after the irradiation of the femtosecond laser. A possible mechanism has been provided to account for the generation of long-lasting phosphorescence.  相似文献   

3.
3 Sc2Ge3O12 (CaSGG) single crystals with the garnet structure have been grown by means of the flux growth technique. The doping with Nd3+ and Mg2+ (as charge compensator) yields samples suitable for optical spectroscopy experiments. The absorption and emission properties have been measured at temperatures ranging from 10 to 298 K. The emission spectra give evidence of the presence of non-equivalent Nd3+ sites. The decay time of the 1.06-μm emission band has been measured as a function of temperature and incident power. The intensities of the 298 K absorption transitions have been analyzed by means of the Judd–Ofelt theory. The radiative lifetimes, the branching ratios (β), and the spontaneous emission probabilities have been evaluated for the 4F3/2 excited state using the calculated intensity parameters. The stimulated-emission cross sections and the branching ratios have been estimated from the experimental data for the most important laser transitions indicating that this crystal can be considered an interesting material for solid-state laser applications. Received: 2 June 1998 / Revised version: 28 October 1998 / Published online: 24 February 1999  相似文献   

4.
Dynamics of the Yb3+ to Er3+ energy transfer in LiNbO3   总被引:1,自引:0,他引:1  
The energy transfer dynamics between Yb3+ and Er3+ ions in lithium niobate is investigated after ytterbium-pulsed excitation at 920 nm. The sensitisation of the LiNbO3:Er3+ system with Yb3+ ions does not modify the lifetime of the 4I13/2 erbium level (1.5-μm emission), whereas it induces a marked, concentration-dependent change in the lifetime of the 2F5/2 (Yb3+) and 4S3/2 (Er3+) multiplets (1060-nm and 550-nm emissions, respectively). The results are analysed by using the rate-equation formalism and cross-relaxation model for the energy transfer. Received: 15 October 1998 / Revised version: 24 November 1998 / Published online: 24 February 1999  相似文献   

5.
Crystallization of hydrogenated amorphous silicon (a-SI:H) has been initiated using ultrashort laser-pulse train annealing. Optical microscopy, infrared absorption, Raman spectroscopy and photoluminescence measurements show that in our experiment the crystallized layer is localized on the surface and is non-epitaxial. The depth of the crystalline layer and its surface morphology are discussed. A sharp luminescence band at 0.970 eV with fine structure is found after laser annealing and is identified as a recombination center similar to irradiation induced defects in crystalline Si.  相似文献   

6.
    
ZnSe single crystals, obtained by the Solid Phase Recrystallization (SPR) method under three different pressure conditions, 10 and 5 atm of Se, and 2 atm of argon, have been investigated by means of photoluminescence (PL) and optical microscopy. Special attention has been paid to the surface state of the samples. Samples recrystallized under 10 atm of Se present the best rate between the PL response for the excitonic zone and the deep level one that shows a “clean” PL emission without significant peaks and/or bands. The presence of slip bands has been detected and analysed by means of optical microscopy and photoluminescence. In order to study the changes introduced by post growth thermal treatments, we have analysed the low temperature PL response on SPR samples after different thermal treatments. Striking changes have been detected in the PL response before and after the thermal treatment. The involved mechanisms have been studied.  相似文献   

7.
We have investigated pure germanium two-dimensional photonic crystals. The photonic crystals which exhibit resonances in the near infrared spectral range were fabricated on germanium-on-insulator substrates using standard silicon-based processing. The germanium-on-insulator substrate consists of a thin layer of pure germanium-on-oxide deposited on a silicon substrate. The optical properties are probed by the direct band gap optical recombination of pure germanium at room temperature. Resonant optical modes are evidenced between 1.68 and 1.53 μm in different type of hexagonal cavities (H1-H5). The spectral position of the modes is controlled by the lattice periodicity and air filling factor of the photonic crystals. Close to the Ge band edge, the quality factors are limited by the bulk material absorption.  相似文献   

8.
Polarized downconversion, 980-nm-upconversion and near-infrared emission characteristics of vapor-transport-equilibrated (VTEed) bulk Er (0.4 mol%)/MgO (6 mol%)-codoped LiNbO3 crystals were investigated. The downconversion and upconversion visible emissions display similar VTE effects including the drop of emission intensity and the weakening of polarization dependence. At 0.98 and 1.5 μm regions, the VTE has a weak effect on the emission intensity, but a strong effect on the spectral shape. The crystalline phases in these bulk Er/Mg-codoped VTE crystals are determined by comparing their infrared emission characteristics with those of pure ErNbO4 powder and locally Er-doped MgO (4.5 mol%):LiNbO3 crystal. The results show that the Er3+ ions present in these bulk Er/Mg-codoped VTE crystals as a mixture of Er:LiNbO3 and ErNbO4 phases. The percentages of the ErNbO4 phase contained in these VTE crystals were evaluated from the 1531 and 1536 nm characteristic absorption areas. The contents of constituent elements were determined by chemical analysis.  相似文献   

9.
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Hydrogenated amorphous silicon nitride based coupled optical microcavity is investigated theoretically and ex- perimentally. The theoretical calculation of the transmittance spectra of optical microcavity with one cavity and coupled microcavity with two-cavity is performed. The optical eigenmode splitting for coupled microcavity is found due to the interaction between the neighbouring localized cavities. Experimentally, the coupled cavity samples are prepared by plasma enhanced chemical vapour deposition and characterized by photoluminescence measurements. It is found that the photoluminescence peak wavelength agrees well with the cavity mode in the calculated transmittance spectra. This eigenmode splitting is analogous to the electron state energy splitting in diatom molecules.  相似文献   

10.
By using an Ar^+ ion laser, a tunable Rh 6G dye laser (linewidth 0.5cm^-1) pumped by the second harmonic of a YAG:Nd laser and a Coherent 899-21 dye laser as light sources and using a monochromator, a phase-locking amplifier and a computer as the data detecting system, we detect the optical properties of Eu^3+-doped Y2SiO5 crystal. Persistent ,spectral hole burning (PSHB) are observed in the Eu^3+ ions spectral lines (^5 Do-T Fo transition) in the crystal at the temperature of 16K. For 15mW dye laser burning the crystal for 0.1 s spectral holes with hole width about 80 MHz both at 579.62nm and at 579.82nm are detected and the holes can remain for a long time, more than 10h.  相似文献   

11.
The temperature-dependent photoluminescence spectra of zinc oxide (ZnO) nanocrystals deposited inside the ultraviolet (UV) opal were studied. ZnO was grown in the voids between FCC packed SiO2 spheres using spray pyrolysis under ultrasonic vibration in the solution containing a zinc nitrate precursor. The ZnO nanoparticles inside opal matrix with UV photonic band-gap exhibit suppression of the excitonic emission and enhancement of the deep level emission. Suppression of the excitonic lines is due to the inhibition of spontaneous emission, while enhancement and broadening of the DL emission in the green spectral region is due to Purcell effect. The infiltration of ZnO nanoparticles inside the photonic crystal may be a useful technique to increase its emission efficiency in the selected spectral region.  相似文献   

12.
Mn5Si3 nanocages and nanotubes were successfully synthesized by molten salt flux reaction at 650 °C. The samples were characterized with X-ray powder diffraction and transmission electron microscopy. The influence of the reactants molar ratio of MnCl2 to Mg2Si and reaction temperature on the phases and morphologies of the products were discussed. The possible mechanism of forming Mn5Si3 nanocages and nanotubes is discussed.  相似文献   

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