Anomalous tunneling of phonon excitations between two Bose-Einstein condensates

We discuss the tunneling of phonon excitations across a potential barrier separating two condensates. It is shown that a strong barrier proves to be transparent for the excitations at low energy epsilon. Moreover, the transmission is reduced with increasing epsilon in contrast to the standard dependence. This anomalous behavior is due to the existence of a quasiresonance interaction. The origin of this interaction is a result of the formation of a special well determined by the density distribution of the condensate in the vicinity of a high barrier.     

On the observation of superconducting phonon structure in proximity tunneling

Unusually clear phonon structure from superconducting Nb is observed in tunneling into the normal side of ultrathin AlNb (NS) proximity sandwiches. Contrary to recent reports, this phonon structure is not inverted. The possible utility of such spectra in deducing the properties of the superconducting state in the underlying S electrode is pointed out.     

Search for localized phonon modes inlead-based alloys by superconducting tunneling

To investigate the appearance of localized phonon modes, superconductive tunneling was performed into films of Pb_0·9M_0·1 (M = Ag, Cd, Ga, Ge, In, Mg, Mg, Sb, Sn, Te, Zn) and Pb_0·97Sn_0·03. The films were quench-condensed and later annealed at 30, 100 and 300°K. Structure in tunneling curves resulting from localized phonons was observed only for a well annealed In alloy film. For most of the impurities an absence of observable local phonon modes could be explained as due to a lack of solid solubility or of sufficient structural order in the film. For Na and Sn alloys, however, these arguments cannot be used. No modes could be seen for such alloys even in films condensed at room temperature, heat-treated slightly, and quenched directly into liquid helium.     

Electron tunneling through a coupled system of electron and phonon

We study the electron tunneling through a single level quantum dot in the presence of electron–phonon interaction. By using the Green’s function and canonical transformation methods, we calculated exactly the current. It is found that the current vs dot level exhibits satellite peaks even without occurring of phonon-assisted tunneling processes, and properties of the current are affected heavily by the strength of electron–phonon interaction and phonon temperature.     

Vacuum tunneling in the four-dimensional Ising model

In the broken phase of the four-dimensional Ising model tunneling between the two degenerate minima of the effective potential takes place in a finite volume. We study this phenomenon numerically. The energies of the lowest zero momentum states are determined on both sides of the phase transition and their different correspondence to particle states in the infinite-volume limit is discussed. A Z₂-invariant definition of the field expectation value and susceptibility is exploited for calculation of the quantities in finite volumes.     

Effect of electron-optical phonon interaction on resonant tunneling in coupled quantum wells

The spatial distribution of the wave functions for electrons in a coupled-quantum-well system of GaAs/Al _x Ga_1?x As with triple barriers is discussed. Within the framework of the dielectric continuum model, the dispersion relations of interface optical phonon modes are given. Furthermore, the interaction between an electron and optical phonons and the ternary mixed crystal effect in these structures are investigated in detail. The optical phonon-assisted tunneling (PAT) is studied using the Fermi golden rule to obtain numerically the PAT currents. The results reveal that the interface optical phonons are more important than the confined longitudinal optical phonons. Only one PAT peak does appear when the middle barrier is wide enough or its Al component is high enough, and the peak moves to the higher applied voltage direction, whereas two PAT peaks do appear when the middle barrier is narrow enough or its Al component is low enough.     

A green function approach to the relaxation time of phonon assisted tunneling

Although many elegant formulations of the phonon assisted tunneling problem have been given, the calculation of the relaxation time itself always has been based on the “golden rule”, which requires the artifice of a fictitious static field. In this communication the relaxation time is given by means of linear response theory, unitary transformations and an application of the Bogoliubov inequality. The artifice of a static field is no longer required.     

Sources of loss processes in phonon generation and detection experiments with superconducting tunneling junctions

Observing the phonon yield, i.e. the ratio of the experimental phonon signal amplitude and the corresponding calculated value, phonon losses within the generation-detection system can be localized and determined quantitatively. With tin junctions on pure silicon substrates immersed in liquid helium the phonon yield is 3–5%. Under vacuum conditions the yield rises to 10–12% indicating strong phonon transmission to the helium bath. The experimental lifetime for 280 GHz phonons in the silicon substrate is longer than 65 µs indicating negligible volume losses and losses at the free substrate surface. It is further shown, that volume losses inside the phonon generator and detector are small compared to the total loss of about 90%. By phonon reverberation measurements we find evidence that the main sources for phonon losses are localized at the boundaries of the tunneling junctions to the substrate. This is supported by an increase of the phonon yield with improved polishing from about 9% (mechanical), 10% (chemical) to 12% (sputter etching). A SIMS analysis indicates the presence of carbonhydrates and probably of water in the boundaries. This layer of extraneous molecules together with the nonideal surface structure of the substrate and the evaporated films weakens the mechanical bonding between the tunnel junctions and the substrate and is possibly causing strong phonon splitting by anharmonic forces.     

The peculiarities of the tunneling conductance and phonon induced features in tetrahedrically bonded semiconductors under pressure

Abstract

Summary The 30 kbar high pressure unit for low temperatures and the digital processing have been applied to the tunneling investigations of Ge and GaAs. The obtained results include the values of the mode Gruneisen constants for zone boundary phonons in <100> direction in Ge, the irregular optical phonons behavior in GaAs, the bistability of tunneling voltage-current curve for GaAs at elevated pressure and the observation of optically induced oscillations on the tunneling conductance of GaAs Schottky barrier. The semi-quantitative model involving the conductance band structure change under pressure and DX-centers in GaAs(Te) is used for the tentative explanation.     

Effect of hydrostatic pressure on the phonon spectrum of PbIn alloys using electron tunneling

The effect of hydrostatic pressure on the phonon spectrum of PbIn alloys has been studied. A shift to higher frequencies of the transverse, longitudinal and impurity band peaks is observed as well as a reduction in amplitude.     

Electron tunneling spectroscopy of the phonon spectrum of MgB<Subscript>2</Subscript>

The specific features of the phonon spectrum of the MgB₂ compound (T _c = 38 K) are investigated by tunneling spectroscopy. It is demonstrated that both the position and the energy width of the fundamental optical mode E _2g in the phonon spectrum are in good agreement with inelastic X-ray spectroscopy data but differ substantially from Raman spectroscopy results. Among possible factors responsible for this discrepancy, the anharmonic and nonadiabatic effects that are characteristic of the MgB₂ system are discussed.     

Comparison of two models for phonon assisted tunneling field enhanced emission from defects in Ge measured by DLTS

Deep Level Transient Spectroscopy (DLTS) was used to measure the field enhanced emission rate from a defect introduced in n-type Ge. The defect was introduced through low energy (±80 eV) inductively coupled plasma (ICP) etching using Ar. The defect, named EP_0.31, had an energy level 0.31 eV below the conduction band. Models of Pons and Makram-Ebeid (1979) [2] and Ganichev and Prettl (1997) [3], which describe emission due to phonon assisted tunneling, were fitted to the observed electric field dependence of the emission rate. The model of Pons and Makram-Ebeid fitted the measured emission rate more accurately than Ganichev and Prettl. However the model of Ganichev and Prettl has only two parameters, while the model of Pons and Makram-Ebeid has four. Both models showed a transition in the dominant emission mechanism from a weak electron–phonon coupling below 152.5 K to a strong electron–phonon coupling above 155 K. After the application of a χ² goodness of fit test, it was determined that the model of Pons and Makram-Ebeid describes the data well, while that of Ganichev and Prettl does not.     

Unconventional phonon spectra and obstructed edge phonon modes

Based on the elementary band representations(EBR), many topologically trivial materials are classified as unconventional ones(obstructed atomic limit), where the EBR decomposition for a set of electronic states is not consistent with atomic valenceelectron band representations. In the work, we identify that the unconventional nature can also exist in phonon spectra, where the EBR decomposition for a set of well-separated phonon modes is not consistent with atomic vibration band representations(A...     

声子频率对同位素掺杂硅声子散射的影响

点缺陷对声子的散射是影响电绝缘体热导率的重要机制之一,其中声子频率是影响声子散射的重要因素．本文主要研究声子频率对同位素掺杂硅声子散射的影响。首先产生一个窄频率范围的声子波包,然后使用分子动力学(MD)模拟声子在同位素掺杂硅中的散射过程,在原子尺度下清晰展示了声子对同位素掺杂的散射过程,并对能量的透射率和反射率进行分析。将模拟结果和已发表的理论结果相比较,在单个同位素掺杂缺陷下,在临近共振频率区域内用改进的R.O.Pohl公式成功的拟合了MD结果,这一结果会对在较宽频率包括非色散和色散声子范围内构造声子热传导公式有帮助.对于在较高的掺杂浓度下,声子频率对声子散射特性的影响还需要更进一步的研究。     

Nanotube phonon waveguide

We find that the high thermal conductivity of carbon nanotubes remains intact under severe structural deformations while the corresponding electrical resistance and thermoelectric power show compromised responses. Similar robust thermal transport against bending is found for boron nitride nanotubes. Surprisingly, for both systems the phonon mean free path exceeds the characteristic length of structural ripples induced by bending and approaches the theoretical limit set by the radius of curvature. The robustness of heat conduction in nanotubes refines the ultimate limit that is far beyond the reach of ordinary materials.     

Acoustic phonon spectroscopy

An introduction is given to an acoustic phonon spectrometer, which is based on optical modulation techniques to detect magnetic circular dichroism. The spectrometer is capable of detecting deviations from a thermal background at a few degrees Kelvin of 1 part in 10⁴ within a 4 mK (80 MHz) bandwidth over the phonon energy range of 0.3 to 16K. Because the strongest phonon interactions in dielectric crystals at a few degrees Kelvin occur on the surfaces, many of the applications have been concerned with surface problems.