Hydrostatic pressure effects on oxygen-related irradiation-produced defects in silicon

Abstract

Hydrostatic pressure has been used as a variable to investigate the E_c-0.164 eV acceptor level for the oxygen-vacancy (O—V) defect in γ-ray irradiated Si, and the annealing/formation of oxygen-related defects in neutron-irradiated Si. The acceptor level is found by deep level transient spectroscopy to move closer to the conduction band and away from the valence band at rates of 3.9 meV/kbar and 2.4 meV/kbar, respectively, i.e., the level moves higher in the gap. There is also a relatively large inward (outward) breathing mode lattice relaxation (4.6±1.2 ų/electron) accompanying electron emission (capture) from this level. Both results reflect the antibonding nature of the level and are qualitatively consistent with the Watkins—Corbett model for the O—V defect. The annealing rate was found by infrared absorption to increase with pressure for the O—V defect at 350°C with a derived activation volume of ?4.5 ų/defect, where the negative sign implies inward relaxation (contraction) on annealing. Pressure has relatively little effect on annealing of the C—Si—O C(3) defect which is interstitial in nature, but strongly favors the formation of the dioxygen (2 oxygen atoms per vacancy, i.e., O₂—V) defect. The intensity of the O₂—V band after annealing at 20 kbar is 5 times higher than that following similar annealing at 0 kbar. Additionally, this intensity at 20 kbar is higher than that achievable by any isochronal or isothermal annealing steps at 0 kbar. These annealing/formation results are discussed qualitatively in terms of models for the various defects.     

Bulk and near-surface annealing behavior of the 0.8 eV luminescence in semi-insulating gallium arsenide

An annealing study of the 0.8 eV photoluminescence band in LEC GaAs has been performed, using a combination of 10 min annealing steps over a temperature range of 800–1100° C and one hour furnace annealing steps at 500–700° C. Results show that the defect responsible for the luminescence is stable in bulk material under all annealing conditions that have been investigated. In combination with earlier results, this demonstrates a stability of the defect to temperatures in excess of 900° C and indicates a parallel with the annealing behavior of the 0.67 eV band in semi-insulating GaAs. The observed annealing behavior is very different in the near-surface region, indicating an important role of As out-diffusion.     

Investigation of defect formation in ZnS single crystals following ionic implantation of compound components

The main features of defect formation following ionic implantation of sulfur, zinc, and argon into zinc sulfide in a wide range of doses, ion-beam currents, target temperatures, and annealing conditions were investigated. The contribution of competing mechanisms of defect formation in different conditions of doping and annealing is discussed. It is shown that defect formation can be controlled by ionic doping of zinc sulfide with the components (zinc and sulfur) in selected doping and annealing conditions.Translated from Izvestiya Akademii Nauk SSSR, No. 10, pp. 61–67, October, 1977.We express our thanks to L. V. Belyuk for obtaining and discussing the electron-diffraction diagrams.     

The kinetics of the annealing of irradiation damage at low temperatures in n-type germanium

The annealing which occurs always near 65K following low-temperature electron-irradiation of n-type germanium is governed by second order (or higher) annealing kinetics. It follows that the experimental activation energy must vary from experiments performed on high resistivity material where the defect concentration is low to those on low resistivity material where the defect concentration is high. A model for the annealing of defects which accounts for this observation and involves the diffusion of ionized interstitials, is suggested.     

Defect engineering of ZnO

The defect responsible for the transparent to red color change of nominally undoped ZnO bulk single crystals is investigated. Upon annealing in the presence of metallic Zn as reported by Halliburton et al. and also Ti and Zr a native defect forms with an energy level about 0.7 eV below the conduction band. This change is reversible upon annealing in oxygen. Optical transmission data along with positron depth profiles and annealing studies are combined to identify the defect as oxygen vacancies. Vacancy clustering occurs at about 500 °C if isolated zinc and oxygen vacancies. In the absence of zinc vacancies, clusters form at about 800 °C.     

Isothermal defect annealing in semiconductors investigated by time-delayed Mössbauer spectroscopy: application to ZnO

The theory for so-called Time-Delayed-Measurements is outlined. This method allows for isothermal annealing studies in emission Mössbauer spectroscopy utilizing radioactive beams. The usefulness of this method is illustrated by the example of the annealing of a magnetic defect in ZnO.     

Thermal Neutron damage in cadmium

The isochronal annealing of the damage produced by thermal neutron irradiation of cadmium at 3.6 °K has been studied for several initial doses which vary by a factor of 1000. The recovery results show a strong dependence upon initial dose. This effect, which is not seen to this extent in the fcc metals, cannot be accounted for by an irradiation annealing mechanism. In contrast to the observation of two processes involving long range defect migration for several fcc metals only one process, at high temperatures, is discernable from isochronal annealing of Cd. The presence of another process at low temperatures is clearly established by other means. Irradiation annealing effects observed during the production of damage at high defect concentrations indicate that the spontaneous annihilation volume between the defects of a new capture event and the defects from an earlier event is 80 atomic volumes. Other results suggest that damage production and recovery mechanisms may be associated with the anisotropic nature of the cadmium hexagonal lattice.     

Stress-induced leakage current characteristics of PMOS fabricated by a new multi-deposition multi-annealing technique with full gate last process

In the process of high-k films fabrication, a novel multi deposition multi annealing(MDMA) technique is introduced to replace simple post deposition annealing. The leakage current decreases with the increase of the post deposition annealing(PDA) times. The equivalent oxide thickness(EOT) decreases when the annealing time(s) change from 1 to 2. Furthermore,the characteristics of SILC(stress-induced leakage current) for an ultra-thin SiO_2/HfO_2 gate dielectric stack are studied systematically. The increase of the PDA time(s) from 1 to 2 can decrease the defect and defect generation rate in the HK layer. However, increasing the PDA times to 4 and 7 may introduce too much oxygen, therefore the type of oxygen vacancy changes.     

Light-induced defect creation in hydrogenated polymorphous silicon during repeated cycles of illumination and annealing

We have examined how the intensity of the ESR signal associated with dangling bonds in hydrogenated polymorphous silicon is affected by repeating light-soaking (LS) and 100°C annealing cycles. It was found that the light-induced degradation efficiency decreases with repeated LS–100°C annealing cycles. This result is accounted for in terms of the termination of dangling bonds by mobile hydrogen, i.e. the termination is enhanced by more mobile hydrogen as a result of modification of the amorphous network by the LS–annealing cycles, and consequently the net light-induced defect creation rate is reduced. This is in contrast with previous models in which the decrease in the light-induced degradation efficiency on repeated LS–annealing cycles is attributed to an increase in the amount of hydrogen being ineffective for light-induced defect creation.     

Defect Characterization of 6H-SiC Studied by Slow Positron Beam

利用单能慢正电子束流,对原生的和经过电子辐照的6H-SiC内的缺陷形成及其退火行为进行研究．发现在n型6H-SiC中,经过退火后缺陷浓度降低．这主要是因为在退火过程中缺陷和间隙子的相互作用所引起．n型6H-Si经过1400 oC、30 min真空退火后,在SiC表面形成一个大约20 nm的Si层,这是在高温退火过程中Si原子向表面逸出的有力证明．在高温退火中,在样品的近表面区域有一个明显的表面效应,既在这些区域的S参数整体较大,这种现象与高温退火中Si不断向表面逸出有关．经过10 MeV的电子辐照,在n型6H-SiC中,正电子有效扩散长度从86.2 nm减少至39.1 nm,说明在样品中由于电子辐照产生大量缺陷．但是对p型6H-SiC,经过10 MeV电子辐照后有效扩散长度变化不大,这与其中缺陷的正电性有关．同时还对n型6H-SiC进行了1.8 MeV电子辐照后的300 oC退火实验,发现退火后缺陷浓度不减反增,这主要是因为在退火过程中,一些双空位缺陷和Si间隙子互相作用从而产生了VC缺陷的缘故．     

Residual defects in high-energy B-, P- and As-implanted Si by rapid thermal annealing

The annealing behavior of secondary defects generated in 2 MeV B- and P-, and 1 MeV As-implanted (100) Si with a dose of 5×10¹⁴ ions/cm² has been investigated after rapid thermal annealing (RTA) treatment using cross-sectional TEM observations. The results are compared with ones obtained by furnace annealing (FA) treatment. RTA is more effective than FA for the defect density reduction of deep defects existing beyond 2 m depths from the surface in B- and P-implanted layers. However, when a dislocation loop diameter is close to the substrate surface, as in the case of As implantation, the loops climb up to the surface by 1250 °C RTA. Moreover, repeated RTA is effective for the suppression of secondary defect growth in B- and P-implanted layers, while there is no difference in defect density or configuration for As implantation between repeated and simple RTA.     

温度变化对Eu/TiO2纳米材料的结构和光学性能的影响

研究了温度(包括退火温度,测试温度)变化对Eu3+掺杂TiO2纳米颗粒的结构和光学性能的影响.结果表明:随着退火温度的升高,纳米颗粒的尺寸变大,Eu3+发光增强;而且当退火温度升到973 K时,纳米颗粒的形状由球状变成方形,并开始发生相变;此后Eu3+离子发光峰的强度随着温度升高明显减弱,与此同时生成了一个新的宽荧光峰...     

Study of radiation-induced damage to type III–V semiconductor compounds irradiated with γ quanta and protons using positron annihilation spectroscopy

The effect of proton and ?? radiation on characteristics of the spectra for the angular distribution of annihilation photons (ADAP) have been studied in the case of positron annihilation in GaAs and GaP single crystals. Relative variations in defect accumulation and annealing under irradiation and subsequent isochronous annealing of the samples have been studied using variations in the basic parameters of the ADAP spectra. In both cases (GaAs and GaP), the variations in the ADAP spectral parameters as functions of the annealing temperature have a steplike character, which is interpreted as the formation of a certain type of defects with different annealing activation energies.     

Positronium formation in dehydrogenated FeTi

Very efficient positronium formation is observed in hydrogenated/dehydrogenerated FeTi after annealing. The effects observed can be interpreted on the basis of defect annealing and mechanisms involved in the self-cleaning of the surface layer of hydrogen sponges.     

Mössbauer study of defects created by low-fluence In+ implantations in InP

The temperature and fluence dependence of defect interactions in damage cascades in n-type InP has been investigated with ion-implanted radioactive¹¹⁹In (T _1.2=2.1 min) probe atoms. The hyperfine interactions for the¹¹⁹Sn Mössbauer daughter atoms in the resulting defect structures have been determined. An annealing model based on the temperature dependent mobility of lattice defects and their interactions in three observed annealing stages is proposed.     

Peculiarities of divacancy annealing in radiation defect clusters

Abstract

The annealing mechanism of divacancies involved in radiation defect clusters is suggested in accordance with which the interaction of interstitial carbon atoms and intrinsic diinterstitials, mobile at T? 100°C, with divacancies results in their smooth annealing in a wide temperature range.     

Influence of rapid thermal annealing on the specific features of defect generation in silicon wafers during the formation of effective internal getters

The specific features of the defect generation in silicon wafers subjected to a rapid thermal annealing during the formation of an internal getter have been investigated using optical microscopy and transmission electron microscopy. It has been established that rapid thermal annealing leads to a significant intensification of the decomposition of a supersaturated solid solution of oxygen in silicon, especially in the central region of the wafer. This intensification is responsible for the appearance of characteristic differences in sizes, densities, and morphological features of the microdefects generated in the samples subjected to a rapid thermal annealing as compared to the samples after a conventional heat treatment. The results obtained have demonstrated that the use of rapid thermal annealing has undoubted advantages in the formation of effective internal getters in silicon wafers.     

CL study of yellow emission in ZnO nanostructures annealed in Ar and O2 atmospheres

The yellow emission of thermally treated undoped and In doped ZnO nanostructures was studied by the cathodoluminescence (CL) technique. CL spectra acquired at room temperature of the as-grown samples revealed two emissions at about 3.2 eV and 2.13 eV, corresponding to the near band edge and defect related emissions, respectively. On annealing the samples at 600  ^°C in Ar and O₂ atmospheres, the defect emission suffers a red shift, irrespective of the annealing atmosphere. This red shift is explained in terms of variations in the relative intensities of the two component bands centered at about 2.24 eV and 1.77 eV, which were clearly resolved in the CL spectra acquired at low temperature of the annealed samples. A decrease of the relative intensity of the yellow emission (2.24 eV) was observed for all thermally annealed samples. The annealing of zinc interstitial point defects is proposed as a possible mechanism to explain this intensity decrease.     

Irradiation induced radiative centres in ZnTe

High energy electron irradiation of ZnTe crystals at 4 K gives rise to a new luminescence line at 2.361 eV and to a broad band at 1.578 eV. These features disappear on annealing at T? 180 K. The defect responsible for these radiative transitions is tentatively identified with Frenkel type close pair. Another broad line at 2.065 eV appears after a 77 irradiation. Its annealing temperature is near 300 K.     

掺Er/Pr的GaN薄膜深能级的研究

利用深能级瞬态谱(DLTS)、傅里叶变换红外光谱(FT-IR)对GaN以及GaN掺Er/Pr的样品进行了 电学和光学特性分析.研究发现未掺杂的GaN样品只在导带下0.270eV处有一个深能级；GaN注 入Er经900℃,30min退火后的样品出现了四个深能级，能级位置位于导带下0.300 eV,0.188 eV,0.600 eV 和0.410 eV；GaN注入Pr经1050℃,30min退火后的样品同样出现了四个深能级 ，能级位置位于导带下0.280 eV,0.190 eV,0.610 eV 和0.390 eV；对每一个深能级的来源 进行了讨论.光谱研究表明，掺Er的GaN样品经900℃,30min退火后，可以观察到Er的1538nm 处的发光，而且对能量输运和发光过程进行了讨论. 关键词： GaN Er Pr 深能级