CsPb3Bi3Te8 and CsPb4Bi3Te9: low-dimensional compounds and the homologous series CsPbmBi3Te5 + m

Two new thermoelectric materials of quaternary bismuth telluride CsPb3Bi3Te8 and CsPb4Bi3Te9 are reported, which are members of a homologous series featuring anionic slabs [PbmBi3Te5 + m]- (m = 1-4) of monotonically increasing thickness.     

添加La的Bi2Te3和Bi0.5Sb1.5Te3热电材料的电磁感应熔炼法制备及其热电性能

在N2气保护下,采用电磁感应法制备了添加La的Bi2Te3和Bi0.5Sb1.5Te3。运用X射线粉末衍射、电感耦合等离子光谱和扫描电子显微镜对材料的物相成分和形貌进行了表征。研究了La对Bi2Te3和Bi0.5Sb1.5Te3热电材料的电导率(σ)、Seebeck系数(S)和热导率(κ)的影响。实验结果表明,添加La明显降低了2种材料的热导率,提高了热电优值(ZT),添加La的Bi0.5Sb1.5Te3的热电优值在室温超过了1。     

Variable-range hopping conductivity in Lu-doped Bi2Te3

The Seebeck coefficient enhancement due to an increase of density-of-states effective mass of electron has been found in n-type Bi_1.9Lu_0.1Te₃. This enhancement is assumed to be related to forming the narrow and non-parabolic impurity (Lu) band with local maximum of electronic density of states lying near the Fermi level. Minimum in the specific electrical resistivity, ρ, originated from change of conductivity mechanism was observed at temperature T_m ≈ 11 K. Above T_m, the ρ change is due to decrease of electron mobility via acoustic phonon scattering. Below T_m, the variable-range hopping conductivity takes place. The electron hops between the localized states of the impurity energy band occur via tunneling process. Using the temperature and magnetic field dependences of ρ, the localization radius of electron was estimated as ≈6 nm. Two parts in the magnetic field dependence of the electrical resistivity were found at temperature of 2 K. At weak magnetic fields, the ρ change is in agreement with the variable-range hopping conductivity mechanism. At high magnetic fields, the positive and almost linear transverse and longitudinal magnetoresistances were observed at low temperatures. Both variable-range hopping conductivity and positive linear magnetoresistance are characteristics of disordered and inhomogeneous semiconductors.     

Direct synthesis of Te/Bi2Te3 nanocomposite powders by a polyol process

Research on Chemical Intermediates - Tellurium nanotube-based bismuth telluride (Te/Bi2Te3) nanocomposite powders have been synthesized by the polyol process using Bi (NO3)3, TeCl4 as the metal...     

简单的溶剂热法制备分层的碲化铋微米结构

采用简单的溶剂热法制备出高纯度的由纳米片自组装而形成的碲化铋微米结构。在碲化铋的形成中,乙二醇不仅作为溶剂,而且还作为还原剂。研究发现,聚乙烯吡咯烷酮(PVP)和硝酸在碲化铋的形成中起到了很重要的作用。通过X-射线衍射(XRD)、X-射线光电子能谱(XPS)、扫描电镜(SEM)、透射电镜(TEM)、高分辨透射电镜(HRTEM)、选区电子衍射(SAED)对其进行表征及研究。最后,利用时间演化实验对碲化铋的形成机理进行了探讨。     

Structural and thermal properties of chemically synthesized Bi2Te3 nanoparticles

Bi₂Te₃ nanoparticles (NPs) have been synthesized at 50?°C by a low-cost wet chemical route. The structural properties of product sample were characterized by powder X-ray diffraction (XRD), transmission electron microscopy (TEM), and scanning electron microscopy. Thermal properties of product sample were investigated by differential scanning calorimetry (DSC), thermogravimetric (TG), and transient plane source techniques. The XRD and selected area electron diffraction of Bi₂Te₃ NPs result showed the polycrystalline nature with a rhombohedral (R3m) structure of the nanocrystallites. The average grain size of Bi₂Te₃ NPs was found to be about 30?nm by XRD and TEM measurements. DSC result shows one endothermic peak and one exothermic peak. TG result shows that only 48?% mass loss has occurred in Bi₂Te₃ sample. The obtained lower thermal conductivity of Bi₂Te₃ NPs is about 0.3?W m^?1 K^?1 at room temperature, which is caused by considering the crystalline nature of this material.     

含镧的Bi2Te3基化合物的溶剂热合成及微观结构

以BiCl3,LaCl3和Te粉为原料,用溶剂热合成法制备了含稀土元素的单相LaxBi4Te6(x≤1)热电材料纳米粉末.研究发现,三元化合物LaxBi4Te6具有与二元Bi2Te3化合物相同的晶体结构和相似的晶格常数。LaxBi4Te6中的La含量随合成温度升高而增加,但与反应时间没有显著关系。LaxBi4Te6合成粉末的颗粒尺寸在30nm左右,并且几乎与反应温度和反应时间没有关系。在120℃合成的粉末基本上为不规则多面体形状,在150℃及以上温度合成的粉末则趋向于薄片状．并存在一些直径在50～80nm之间的纳米管。     

Thermoelectric properties of Bi2Te3 films by constant and pulsed electrodeposition

Bi₂Te₃ films have been grown by constant and pulsed electrochemical deposition. The pulsed deposition was carried out by alternating between a constant potential (potentiostatic mode) and an open circuit potential (galvanostatic mode, where current density is fixed at 0 mA/cm²). The Harris texture analysis was performed to determine the degree of preferred orientation. The results showed that the films were strongly oriented along (1?1?0) direction. The morphology and compositions of the films were then analyzed. Finally, their Seebeck coefficient and electrical resistivity were measured and used to determine the thermoelectric Power Factor of the films for a temperature range between 57 and 107 °C.     

Unexpected Room‐Temperature Ferromagnetism in Nanostructured Bi2Te3

There is an urgent need for the development in the field of the magnetism of topological insulators, owing to the necessity for the realization of the quantum anomalous Hall effect. Herein, we discuss experimentally fabricated nanostructured hierarchical architectures of the topological insulator Bi₂Te₃ without the introduction of any exotic magnetic dopants, in which intriguing room‐temperature ferromagnetism was identified. First‐principles calculations demonstrated that the intrinsic point defect with respect to the antisite Te site is responsible for the creation of a magnetic moment. Such a mechanism, which is different from that of a vacancy defect, provides new insights into the origins of magnetism. Our findings may pave the way for developing future Bi₂Te₃‐based dissipationless spintronics and fault‐tolerant quantum computation.     

Nanostructured Bi2Te3 synthesized by low temperature aqueous chemical route

Chemical and physical reactions during the low temperature aqueous chemical synthesis of nanostructured Bi₂Te₃ powders were investigated in-situ by pH measurement, color observation of the solution and X-ray diffraction analysis of the powders. It was found that Bi₂Te₃ could be synthesized only in a strong alkaline solution. Bi₂Te₃ nanocapsules were synthesized by the aqueous chemical route at 65 °C with the addition of disodium ethylenediaminetetraacetate salt. High-resolution transmission electron microscopy observation indicates that the nanocapsules are hollow-structured with a wall thickness of about 6 nm. __________ Translated from CHIMICA SINICA, 2005, 63(16)(in Chinese)     

Electrochemistry of bismuth interlayers in (Bi2)m(Bi2Te3)n superlattice

Journal of Solid State Electrochemistry - Selective electrochemical transformations of bismuth interlayers in (Bi2)m(Bi2Te3)n superlattices can be of interest as a means of thermoelectric materials...     

Gas-Chromatographie von Tl, Se, Te, Hg, As, Sb, Bi, Sn als Phenylverbindungen

Zusammenfassung Die Phenylverbindungen von Thallium, Selen, Tellur, Quecksilber, Arsen, Antimon, Wismut und Zinn sind zur gas-chromatographischen Analyse dieser Elemente geeignet. Sie entstehen bis auf Thalliumtriphenyl quantitativ beim Umsatz der aus saurer Lösung extrahierten Diäthyldithiocarbamidate mit magnesiumorganischen Verbindungen. Gas-chromatographisch lassen sich die Phenylverbindungen aller acht Elemente mit einer Säule unter Verwendung eines Temperaturprogramms trennen. Im Falle des Quecksilberdiphenyls konnte keine vollständige Elution erreicht werden.Vortrag anläßlich der Tagung Euroanalysis I, 28. 8.–1. 9. 1972 in Heidelberg.     

Temperature dependence of the thermophysical properties of Bi1.5Sb0.5Te3

The thermophysical properties (thermal diffusivitya, specific heatC _p and thermal conductivity λ), of Bi_1.5Sb_0.5Te₃ were measured in the temperature range 300–700 K. The results showed that the contribution of the charge carriers to the thermal conduction is negligibly small in comparison with the contribution of phonons at high temperatures. On the other hand, the heat conduction due to the simultaneous thermal diffusion of electrons and holes is important as well as the lattice thermal conduction. The explanation of the results was supported by using electrical conductivity measurements and X-ray diffraction.     

Doped Bi2Te3 nano-structured semiconductors obtained by ultrasonically assisted hydrothermal method

Nanocrystalline powders of doped Bi₂Te₃, with Ag (S1 sample), Sb (S2 sample), Sn (S3 sample) ions with different morphology and particle size 30–50 nm were prepared by a ultrasonically assisted hydrothermal method in alkaline aqueous solution with different concentration of NaBH₄ as reducing agent at 200°C for 3 hours and 80% fill degree of autoclave. The influence of dopants and hydrothermal treatment conditions on the formation features, phase composition, particle size, morphology and properties of the products were investigated by X-ray diffraction, scanning electron microscopy, energy dispersive spectroscopy, atomic force microscopy and electrical measurements. This paper reports a comparative study regarding the dopants influence to the shape and size of nano-structured thermoelectric materials. It was found that hydrothermal processing results in formation of low dimensional dispersion of doped Bi₂Te₃ nanostructures with desired shape and size and high degree of crystallinity with typical semiconductor behavior.