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1.
We present the results of an investigation of spin dependent recombination in (100) oriented, gate controlled Si diodes irradiated by 30 keV electrons. After irradiation, recombination at the SiSiO2 interface is increased, and saturation of the spin resonance increases the diode forward current by 5 parts in 104. The results cannot be described by a conventional Shockley-Read recombination model. An alternative picture is proposed involving recombination between trapped electrons and trapped holes. 相似文献
2.
实验结果发现突发击穿(snapback),偏置下雪崩热空穴注入NMOSFET栅氧化层,产生界面态,同时空穴会陷落在氧化层中.由于栅氧化层很薄,陷落的空穴会与隧穿入氧化层中的电子复合形成大量中性电子陷阱,使得栅隧穿电流不断增大.这些氧化层电子陷阱俘获电子后带负电,引起阈值电压增大、亚阈值电流减小.关态漏泄漏电流的退化分两个阶段:第一阶段亚阈值电流是主要成分,第二阶段栅电流是主要成分.在预加热电子(HE)应力后,HE产生的界面陷阱在snapback应力期间可以屏蔽雪崩热空穴注入栅氧化层,使器件snapback开态和关态特性退化变小.
关键词:
突发击穿
软击穿
应力引起的泄漏电流
热电子应力 相似文献
3.
对某国产CMOS图像传感器进行了两种不同能量的电子辐照试验,在辐照前后及退火过程中采用离线测量方法,考察了暗信号、饱和电压、光谱响应特性等参数,分析了器件的电子辐照效应损伤机理。结果表明:暗信号和暗信号非均匀性都随着辐照剂量的增加及高温退火时间的延长而增大;饱和电压在两种能量电子辐照下均出现较大幅度的减小,并在高温退火过程中有所恢复;光谱响应特性无特别明显变化。经分析,暗电流、饱和电压的变化主要由辐照诱发的氧化物陷阱电荷导致的光敏二极管耗尽层展宽和界面陷阱电荷密度增大导致产生-复合中心的增加所引起。 相似文献
4.
It was found that irradiating an array of Ge nanoclusters in n-Si with light that induced interband transitions gave rise to negative photoconductivity. This result was explained by localization of equilibrium electrons at the Si/Ge interface in the potential of the nonequilibrium holes trapped on deep states in Ge islands. 相似文献
5.
对1.4nm超薄栅LDD nMOSFET器件栅致漏极泄漏GIDL(gate-induced drain leakage)应力下的阈值电压退化进行了研究.GIDL应力中热空穴注进LDD区界面处并产生界面态,这导致器件的阈值电压变大.相同栅漏电压VDG下的不同GIDL应力后阈值电压退化量的对数与应力VD/VDG的比值成正比.漏偏压VD不变的不同GIDL应力后阈值电压退化随着应力中栅电压的增大而增大,相同栅偏压VG下的不同GIDL应力后阈值电压退化也随着应力中漏电压的增大而增大,这两种应力情形下退化量在半对数坐标下与应力中变化的电压的倒数成线性关系,它们退化斜率的绝对值分别为0.76和13.5.实验发现器件退化随着应力过程中的漏电压变化远大于随着应力过程中栅电压的变化.
关键词:
栅致漏极泄漏
CMOS
阈值电压
栅漏电压 相似文献
6.
Comparison of hot-hole injections in ultrashort channel LDD nMOSFETs with ultrathin oxide under an alternating stress
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The behaviours of three types of hot-hole injections in ultrashort
channel lightly doped drain (LDD) nMOSFETs with ultrathin oxide
under an alternating stress have been compared. The three types of
hot-hole injections, i.e. low gate voltage hot hole injection
(LGVHHI), gate-induced drain leakage induced hot-hole injection
(GIDLIHHI) and substrate hot-hole injection (SHHI), have different
influences on the devices damaged already by the previous hot
electron injection (HEI) because of the different locations of
trapping holes and interface states induced by the three types of
injections, i.e. three types of stresses. Experimental results show
that GIDLIHHI and LGVHHI cannot recover the degradation of electron
trapping, but SHHI can. Although SHHI can recover the device's
performance, the recovery is slight and reaches saturation quickly,
which is suggested here to be attributed to the fact that trapped
holes are too few and the equilibrium is reached between the
trapping and releasing of holes which can be set up quickly in the
ultrathin oxide. 相似文献
7.
对超深亚微米PMOS器件的负栅压温度不稳定性(NBTI)退化机理进行了研究.主要集中在对器件施加NBT和随后的PBT应力后器件阈值电压的漂移上.实验证明反型沟道中空穴在栅氧中的俘获以及氢分子在栅氧中的扩散是引起NBTI退化的主要原因.当应力条件变为PBT时,陷落的空穴可以快速退陷,但只有部分氢分子可以扩散回栅氧与衬底界面钝化硅悬挂键,这就导致了PBT条件下阈值电压只能部分恢复.
关键词:
超深亚微米PMOS器件
负偏压温度不稳定性
界面陷阱
氢气 相似文献
8.
Abnormal phenomenon of source-drain current of AlGaN/GaN heterostructure device under UV/visible light irradiation
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Yue-Bo Liu 《中国物理 B》2021,30(11):117302-117302
We report an abnormal phenomenon that the source-drain current (ID) of AlGaN/GaN heterostructure devices decreases under visible light irradiation. When the incident light wavelength is 390 nm, the photon energy is less than the band gaps of GaN and AlGaN whereas it can causes an increase of ID. Based on the UV light irradiation, a decrease of ID can still be observed when turning on the visible light. We speculate that this abnormal phenomenon is related to the surface barrier height, the unionized donor-like surface states below the surface Fermi level and the ionized donor-like surface states above the surface Fermi level. For visible light, its photon energy is less than the surface barrier height of the AlGaN layer. The electrons bound in the donor-like surface states below the Fermi level are excited and trapped by the ionized donor-like surface states between the Fermi level and the conduction band of AlGaN. The electrons trapped in ionized donor-like surface states show a long relaxation time, and the newly ionized donor-like surface states below the surface Fermi level are filled with electrons from the two-dimensional electron gas (2DEG) channel at AlGaN/GaN interface, which causes the decrease of ID. For the UV light, when its photon energy is larger than the surface barrier height of the AlGaN layer, electrons in the donor-like surface states below the Fermi level are excited to the conduction band and then drift into the 2DEG channel quickly, which cause the increase of ID. 相似文献
9.
Combined effects of cycling endurance and total ionizing dose on floating gate memory cells
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Si-De Song 《中国物理 B》2022,31(5):56107-056107
The combined effects of cycling endurance and radiation on floating gate memory cell are investigated in detail, and the obtained results are listed below. (i) The programmed flash cells with a prior appropriate number of program and easing cycling stress exhibit much smaller threshold voltage shift than without those in response to radiation, which is ascribed mainly to the recombination of trapped electrons (introduced by cycling stress) and trapped holes (introduced by irradiation) in the oxide surrounding the floating gate. (ii) The radiation induced transconductance degradation in prior cycled flash cell is more severe than those without cycling stress in the programmed state or erased state. (iii) Radiation is more likely to set up the interface generation in programmed state than in erased state. This paper will be useful in understanding the issues involved in cycling endurance and radiation effects as well as in designing radiation hardened floating gate memory cells. 相似文献
10.
A tight-binding theory is elaborated for multilayer semiconductor heterostructures of type II in which the states of electrons and holes are dimensionally quantized in adjacent layers and overlap in a narrow region near the interface. The major effort is focused on the calculation of linear photoluminescence polarization induced by the anisotropy of chemical bonds on the ideal interface under the radiation along the axis of growth. An expression for the matrix element of the optical transition on the type-II interface under arbitrary polarization of the emitted photon is obtained. The treatment is based on the sp 3 tight-binding model. The effect of the interface tight-binding parameters considered as free ones on the linear photoluminescence polarization is analyzed. The theory allows for the giant linear photoluminescence polarization discovered in the ZnSe/BeTe heterostructure; it also predicts that the polarization plane usually coincides with the plane containing the chemical bonds at the heterojunction. 相似文献
11.
Gnana Prakash Prashanth Ganesh Y. N. Nagesha D. Umakanth S. K. Arora K. Siddappa 《辐射效应与固体损伤》2013,168(3):323-331
The effect of 30 v MeV Li 3+ ion and 8 v MeV electron irradiation on the threshold voltage ( V TH ), the voltage shift due to interface trapped charge ( j V Nit ), the voltage shift due to oxide trapped charge ( j V Not ), the density of interface trapped charge ( j N it ), the density of oxide trapped charge ( j N ot ) and the drain saturation current ( I D v Sat ) were studied as a function of fluence. Considerable increase in j N it and j N ot , and decrease in V TH and I D v Sat were observed in both types of irradiation. The observed difference in the properties of Li 3+ ion and electron irradiated MOSFETs are interpreted on the basis of energy loss process associated with the type of radiation. The study showed that the 30 v MeV Li 3+ ion irradiation produce more damage when compared to the 8 v MeV electron irradiation because of the higher electronic energy loss value. High temperature annealing studies showed that trapped charge generated during ion and electron irradiation was annealed out at 500 v °C. 相似文献
12.
V. A. Kukushkin N. V. Baidus S. M. Nekorkin D. I. Kuritsyn A. V. Zdoroveischev 《Optics and Spectroscopy》2017,123(5):754-759
Kinetics of relaxation of photoluminescence from the interband transition between dimensionalquantization levels of electrons and holes in InGaAs/GaAs quantum wells as a function of their distance to an interface with Au is investigated. It is demonstrated that the photoluminescence relaxation time becomes several times shorter when the distance from the quantum well to the interface decreases to several tens of nanometers. It is established that the photoluminescence relaxation time at a shorter wavelength corresponding to a recombination transition between excited states of electrons and holes in the quantum well is shorter than that at a longer wavelength corresponding to a recombination transition between the ground states. A theoretical model explaining this phenomenon is proposed. 相似文献
13.
14.
Defects formation under UV-irradiation in the impurity-induced absorption bands at 4.2 K has been studied for crystals with and without traps for electrons (CsI:Pb and Eu2?-doped alkali halides, respectively). In both cases the results have been explained by an electron transfer from the impurity-perturbed halogen ion states, resulting in the appearance of electrons and holes in the crystal. In CsI:Pb, the electrons are trapped by lead ions and the holes are self-trapped. In Eu2?-doped crystals, the electrons and the holes recombine with the formation of excitons, whose decay results in the creation of Frenkel defects. 相似文献
15.
基于氧化层空穴俘获和质子诱导界面陷阱电荷形成物理机制的分析,分别建立了MOS结构电离辐射诱导氧化层陷阱电荷密度、界面陷阱电荷密度与辐射剂量相关性的物理模型.由模型可以得到,在低剂量辐照条件下辐射诱导产生的两种陷阱电荷密度与辐射剂量成线性关系,在中到高辐射剂量下诱导陷阱电荷密度趋于饱和,模型可以很好地描述这两种陷阱电荷与辐射剂量之间的关系.最后讨论了低剂量辐照下,两种辐射诱导陷阱电荷密度之间的关系,认为低辐射剂量下两者存在线性关系,并用实验验证了理论模型的正确性.该模型为辐射环境下MOS器件辐射损伤提供了更
关键词:
MOS结构
辐射
界面陷阱
氧化层陷阱 相似文献
16.
Photoinduced absorption below the band gap in a-Si: H is interpreted in terms of transitions between holes trapped in states near the trap quasi-Fermi level and the valence band. 相似文献
17.
Thermoluminescence glow curves are a fairly good representation of the different defect centres in MgO produced by γ or reactor irradiation. The glow peaks at 370, 440, 485 and 545 K have been found to be due to hole trapped centres. The 370 K peak has been found to be due to holes released from VM centres (hole trapped at action vacancy associated with a neighbouring impurity ion). The 665 K peak in γ-irradiated MgO is due to charge transfer between the adsobred oxygen ions and surface defect centres. The F-type centres produced on reactor irradiation (neutron and γ) and on quenching from high temperatures before γ-irradiation are also found to give thermoluminescence peaks at temperatures higher than 560 K. It has also been found that reactor irradiation partially annihilates the trapping centres which are responsible for lower temperature glow peaks. 相似文献
18.
19.
Hot-carrier degradation for 90nm gate length LDD-NMOSFET with ultra-thin gate oxide under low gate voltage stress
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The hot-carrier degradation for 90~nm gate length lightly-doped drain
(LDD) NMOSFET with ultra-thin (1.4~nm) gate oxide under the low gate
voltage (LGV) (at Vg=Vth, where Vth is the
threshold voltage) stress has been investigated. It is found that the
drain current decreases and the threshold voltage increases after the
LGV (Vg=Vth stress. The results are opposite to the
degradation phenomena of conventional NMOSFET for the case of this
stress. By analysing the gate-induced drain leakage (GIDL) current
before and after stresses, it is confirmed that under the LGV stress
in ultra-short gate LDD-NMOSFET with ultra-thin gate oxide, the hot
holes are trapped at interface in the LDD region and cannot shorten
the channel to mask the influence of interface states as those in
conventional
NMOSFET do, which leads to the different degradation phenomena from those of the
conventional NMOS devices. This paper also discusses the degradation in the
90~nm gate length LDD-NMOSFET with 1.4~nm gate oxide under the LGV stress at
Vg=Vth with various drain biases. Experimental results show that
the degradation slopes (n) range from 0.21 to 0.41. The value of
n is
less than that of conventional MOSFET (0.5-0.6) and also that of the long gate
length LDD MOSFET (\sim0.8). 相似文献
20.
We demonstrate the spin interactions between dispersedly trapped electrons and holes in a semiconductor using the double electron–electron resonance (DEER) method of the pulsed electron paramagnetic resonance (EPR) techniques. An aluminum-doped titanium dioxide crystal is adopted as a spin system, in which optically generated electrons and holes are trapped, to reveal EPR signals that appear close to each other at a selected crystal orientation under an external magnetic field. We used the four-pulse DEER method by applying two microwave frequencies to a microwave cavity for pumping electrons and probing holes at the optimum temperature of 32 K. The dipolar modulation in the probed signal by pumping interacting spins was successfully detected. The observed non-oscillating decay shape indicates that the detected interaction is caused by widely distributed trapped electron and hole spins over long distances. We were able to extract a spin-pair distribution function by the first derivative of a background-corrected curve, referring to a previously reported method. 相似文献