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1.
2.
The theory of shear magnetostriction (SMS) in ferromagnetic metallic systems is formulated in terms of Green functions in real space for a tight binding model. This is general enough to include amorphous (“glassy”) alloys, as well as crystalline materials. It is shown that the SMS coefficient λs(EF) must have at least four zeros as a function of band filling EF through the d-band, which explains the change in sign between Fe alloys and Co, Ni alloys. A method is presented for computing the indefinite integral of the imaginary part of the product of two Green functions expressed as continued fractions, not necessarily over the same band width, and some preliminary calculations explore the importance of various terms.  相似文献   

3.
A low-temperature peak in C(p)/T(3) vs is ubiquitous to glasses. It arises from an abundance of low-frequency vibrations, the origin of which remains unclear. A comparable C(p)/T(3) vs peak is observed in crystals due to the dispersion of acoustic phonons and/or the excitation of optical phonons. We compared the C(p)/T(3) vs peaks in metallic and oxide glasses to elemental crystals by analyzing specific heat, phonon density of states, and elastic constant data. We observe no clear distinction in the peak temperature or amplitude between metallic glasses and crystals. Surprisingly, the peak is larger in single crystal Pd(40)Cu(40)P(20) than in glassy Pd(40)Cu(40)P(20).  相似文献   

4.
Using Bardeen's disorder scattering model we calculate the single-particle occupation function for liquid metals. Our results demonstrate that the blurring of the Fermi surface is considerable in liquids with short mean free path. Finally, using an appropriate dielectric function, we obtain the effective ion-ion interaction which shows how the Friedel oscillations are damped in the liquid.  相似文献   

5.
应用量子干涉理论和第一性原理研究了Co/Cu/Co夹层结构在[100]和[110]取向上振荡交换耦合及对磁层厚度的依赖,对夹层交换耦合振荡的计算结果表明:当相应的周期不变时,磁性层(Co)厚度的变化将导致在不同的RKKY振荡特征中势的再分配,磁层厚度发生变化时,磁性层上电子结构也发生变化,当磁性层较厚时,交换耦合仅在某一渐近值附近有一小的振荡。耦合振荡的周期、振幅和相位的测量与实验相一致,也与Barnas和Bruno 理论吻合。  相似文献   

6.
应用量子干涉理论和第一性原理研究了Co/Cu/Co夹层结构在[100]和[110]取向上振荡交换耦合及对磁层厚度的依赖,对夹层交换耦合振荡的计算结果表明:当相应的周期不变时,磁性层(Co)厚度的变化将导致在不同的RKKY振荡特征中势的再分配,磁层厚度发生变化时,磁性层上电子结构也发生变化,当磁性层较厚时,交换耦合仅在某一渐近值附近有一小的振荡.耦合振荡的周期、振幅和相位的测量与实验相一致,也与Barnas和Bruno理论吻合.  相似文献   

7.
This article examines results of x-ray emission spectroscopy and x-ray diffractometry of amorphous and crystalline layers of certain germanides of iron-group transition metals. Combined analysis of the K- and L-bands of Me and Ge in Me2 (Fe, Co, Ni)Ge and data from model interpretation of radial distribution functions of atoms in amorphous layers are used to make conclusions on the character of the chemical bond and the structure of the short-range order in the materials studied. It was established that there is no significant change in the character of the chemical bond in germanides Me2(Fe, Co, Ni)Ge in the transition from the crystalline to the amorphous state. It was also found that short-range order in the investigated amorphous layers can be described by a complex poly-structural atom distribution, i.e. it is characterized by a complex, microscopically nonuniform model of the type Me2Ge+Me.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 39–43, January, 1986.  相似文献   

8.
A magnetic impurity, having the s-j interaction with conduction electrons, under the crystalline field of host metals is investigated. The Hamann integral equation for the t-matrix can be derived and solved by the method of Zittartz and Müller-Hartmann for the cases of (1) small splittings, yielding the Kondo anomaly and decrease of the Kondo temperatureT K compared with no splittings, (2) a large splitting from the crystalline ground doublet state, producing the higherT K by the exicited level, and (3) a large splitting from the ground singlet state giving no Kondo effect. The macroscopic properties are calculated for (1) and (2).  相似文献   

9.
The special features of the antiferromagnetic resonance in metals in presence of a superconducting ordering are analyzed on the basis of the surface impedance. The indirect exchange interaction determines the shift of the resonace frequency and the spectrum of a new undamped mode near ωr. A parallel is drawn bettween the antiferromagnetic resonances in normal and superconducting states.  相似文献   

10.
A new method is introduced for direct determination of the quadrupole splitting of amorphous alloys in the ferromagnetic state. This makes use of the radio-frequency induced collapse of the magnetic hyperfine structure.  相似文献   

11.
We have investigated third order corrections and finite conduction band effects on the indirect exchange interaction assuming a large energy gap compared to the valence band width. We regain an oscillatory expression in which as opposed to the Bloembergen-Rowland formula the energy gap as well as the conduction band width modifies both the magnitude and phase of the oscillations.  相似文献   

12.
Using the Hubbard model in the framework of the tight-binding formulation, we studied the effects of the electron–electron (e–e) interaction on the indirect magnetic exchange coupling between the magnetic impurities embedded in triangular graphene nanoflakes. The results show that the magnitude of the coupling enhances in the presence of the e–e interaction and Rashba spin–orbit interaction (RSOI). The RKKY coupling magnitude depends on the impurity positions in nanoflake and the size of the system, as well.  相似文献   

13.
14.
Aluminium-induced crystallization of amorphous silicon (a-Si) in Al/a-Si and a-Si/Al bilayers was studied upon annealing at low temperatures between 165 and 250 °C, by X-ray diffraction (XRD) and Auger electron spectroscopy (AES). Upon annealing the inward diffusion of Si along grain boundaries in Al takes place, followed by crystallization of this diffused Si. Continuous annealing leads to (more or less) layer exchange in both types of bilayers. The change in bulk energy of the Al phase (release of macrostress and microstrain, increase of grain size) promotes the occurrence of layer exchange, whereas changes in surface and interface energies counteract the layer exchange.  相似文献   

15.
16.
The indirect exchange interaction between localized magnetic moments via virtual excitations from the valence band in intrinsic semiconductors is calculated taking into account the temperature, energy gaps, finite valence bands and effective masses. The inclusion of finite temperature effects changes significantly the phase and magnitude of the oscillations. For small gap semiconductors the oscillatory character and the possibility of ferro-magnetic as well as anti-ferromagnetic coupling are obtained. The exchange interaction oscillates with temperature suggesting interesting applications of this model.  相似文献   

17.
Ytterbium vapor condensation on a liquid-helium cooled substrate in a hydrogen atmosphere is used to obtain Yb-H films containing up to 55 at.% hydrogen. Various thermodynamic and kinetic parameters of the transition of these films from the amorphous to the crystalline state (ac transition) are investigated along with the electrical conductivity of these states. It is shown that the investigated properties of Yb-H films containing up to 40 at.% hydrogen are essentially indistinguishable from those of pure Yb films in the temperature interval 4.2–293 K. Increasing the hydrogen concentration to 55 at.% leads to an insignificant increase in the electrical resistivity, the kinetic temperature, and the activation energy of the ac transition, and also to a decrease of the propagation speed of self-maintaining avalanche (explosive) crystallization. Reasons for the observed influence of hydrogen on the properties of Yb-H films are analyzed. The examined low-temperature Yb-H condensates can be characterized as a “frozen” solid solution of hydrogen in ytterbium in the temperature interval 4.2–293 K. Storing such films at room temperature leads to the formation of ionic ytterbium dihydride YbH2. Fiz. Tverd. Tela (St. Petersburg) 41, 177–182 (February 1999)  相似文献   

18.
A review is given of the wide range of ferromagnetic materials which exhibit Invar characteristics. It is proposed to illustrate the thesis that Invar behaviour is very general among such materials and does not necessarily demand the following conditions to be satisfied: (1) presence of iron; (2) incipient antiferromagnetism; (3) heterogeneous alloying; (4) closeness to a martensite transformation.

For most but not all of the materials discussed weak itinerant ferromagnetism accompanies and causes Invar characteristics. An example counter to this behaviour is Fe3Pt. Here, Pettifor and Roy proposed as the origin of Invar behaviour a more general itinerant electron instability than is characteristic of weak itinerancy.  相似文献   


19.
Crystalline (cr-) Dyag [CsC] structure] orders antiferro-magnetically with TN≅60K; amorphous (am-) DyAg ferro-magnetically with TC≈-18K. We measured the longitudinal field (LF) μ+SR relaxation functions GZZ(t) for 5K<T<300K using surface muons. In the paramagnetic state. cr-DyAg gives an exponential GZZ (t) in the relaxation rate rising first slowly then more rapidlynear TN; no decoupling is observed in LF up to 0.4T. In the ordered state we see a Lorentzian Kubo-Toyabe GZZ(t), becoming nearly static at the lowest temperatures. Its static width is very narrow (Δ≈-7 MHz), and full dceoupling is achieved here in 0.1 T. On approaching TN, the fluctuation rate and the static width increase mootonically bt the field distribution remains Loratzian. A LF of 0.4T is then insufficient to quench the fast exponential relaxation. In paramagnetic am-DyAg, the μ+ depolarization is always much faster then in cr-DyAg. At lower temperatures it is better described by a root-exponential than an exponential GZZ(t). Below TC an exponentially relaxing signal with 1/3 amplitude is seen. The decoupling effect of LF up to 0.4T was negligible at all temperatures.  相似文献   

20.
Equations of the Bloch-Hasegawa type are derived in the case of anisotropic exchange interaction between the subsystems of the magnetic moments of paramagnetic impurities and conduction electrons under conditions of their collective motion. Expressions describing the effective linewidth of electron paramagnetic resonance and the effective g factor are obtained.  相似文献   

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