Nd:YVO4自受激拉曼激光器调Q锁模特性

利用Nd:YVO4激光晶体的自受激拉曼效应,结合Cr:YAG被动锁模技术和倍频技术,实现了结构紧凑的1176 nm和588 nm黄光锁模激光输出。激光器为LD端面泵浦,三镜折叠腔结构,并且采用了透过率为10%的输出镜。Nd:YVO4晶体长度为10 mm,Nd3+离子掺杂质量分数为0.2%,Cr:YAG晶体的初始透过率为67%。10 W激光泵浦时,1176 nm激光平均输出功率为123 mW,调Q包络宽度为6 ns,调Q包络内的锁模脉冲重复频率高达1 GHz。588.2 nm 黄光的平均输出功率为8 mW。     

被动调Q自拉曼Nd:GdVO4激光器

对激光二极管(LD)抽运的自拉曼Nd:GdVO4被动调Q激光器进行了详细的理论和实验研究.实验中采用Nd:GdVO4晶体同时作为激光介质和拉曼晶体,分别用了两块不同初始透射率的Cr4 :YAG晶体,得到并比较了采用不同初始透射率的Cr4 :YAG晶体时被动调Q自拉曼激光器的性能.测量了平均输出功率、脉冲宽度和脉冲重复率随抽运功率的变化关系.当Cr4 :YAG的初始透射率为0.91,输入功率是5.7 W时,得到的拉曼光的最高功率为244.6 mW,相应的转换效率为4.3%.通过数值求解基频光和拉曼光空间分布的速率方程并应用到被动调Q自拉曼Nd:GdYO4激光器.获得的理论结果与实验结果大致相符.     

声光调Q Nd:YVO4晶体级联拉曼倍频窄脉宽657 nm激光器

本工作对声光调Q的Nd:YVO₄晶体级联自拉曼腔内二阶斯托克斯光倍频实现窄脉宽红光激光进行了研究.从改善自拉曼晶体热效应出发,综合考虑基频激光性能和提高拉曼变频性能,设计了三段式键合YVO₄/Nd:YVO₄/YVO₄晶体来提升拉曼转换效率和输出功率.选用针对二阶斯托克斯波长倍频的室温临界相位匹配切割的LBO晶体作为非线性光学晶体.其匹配角度(θ=86.0°,φ=0°)非常接近非临界相位匹配,具有较小的走离角,有利于实现高效的倍频转换效率.通过抽运光束腰位置、声光调Q重复频率等参数优化,在14.2 W抽运功率和60 kHz重复频率下,获得最高平均输出功率1.63 W、转换效率11.5%的657 nm红光激光输出.657 nm红光的脉冲宽度为11.5 ns,窄于普通掺钕激光晶体1.3 μm波段激光倍频实现的红光激光,表明通过级联拉曼倍频技术可发挥拉曼过程脉宽压缩特性实现较窄脉宽红光激光输出.     

高重复频率1.34μm调Q锁模Nd:YVO_4激光器

报道了基于V:YAG可饱和吸收体的1.34μm被动调Q锁模Nd:YVO4激光器。采用直腔结构,使用透过率为10%的输出镜,在LD端面泵浦的情况下,实现了重复频率高达2.6GHz的1.34μm调Q锁模运转。Nd:YVO4晶体中,Nd3+离子掺杂质量分数为0.2%,V:YAG晶体的初始透过率为83%。在泵浦功率为11 W时,1.34μm调Q锁模激光的最大平均输出功率为308mW,光-光转换效率为2.8%。     

Nd:YVO4声光调Q腔内倍频457 nm蓝光激光器

脉冲蓝光激光器在水下探测、水下通信和遥感方面有着重要的应用前景。根据高斯光束传输的ABCD矩阵,设计了对热效应不灵敏的Z型谐振腔。利用808 nm激光二极管(LD)端面抽运Nd:YVO4晶棒,在室温下实现了4F3/2→4I9/2准三能级激光谱线跃迁。通过声光调Q和LBO腔内倍频,获得了稳定的高重复频率、高峰值功率457 nm蓝光激光输出。当抽运功率为30 W时,在重复频率为10 kHz下,获得最大单脉冲能量为56 μJ ,脉冲宽度为217 ns,峰值功率达258 W; 在重复频率为20 kHz下,获得最大平均功率为760 mW,脉冲宽度为261 ns,峰值功率为146 W。在最大平均输出功率下测量了脉冲457 nm蓝光激光器的功率稳定性,20 min之内其最大不稳定度小于2%。     

被动调Q自拉曼Nd∶GdVO4激光器

对激光二极管(LD)抽运的自拉曼Nd∶GdVO4被动调Q激光器进行了详细的理论和实验研究。实验中采用Nd∶GdVO4晶体同时作为激光介质和拉曼晶体,分别用了两块不同初始透射率的Cr4 ∶YAG晶体,得到并比较了采用不同初始透射率的Cr4 ∶YAG晶体时被动调Q自拉曼激光器的性能。测量了平均输出功率、脉冲宽度和脉冲重复率随抽运功率的变化关系。当Cr4 ∶YAG的初始透射率为0.91,输入功率是5.7 W时,得到的拉曼光的最高功率为244.6 mW,相应的转换效率为4.3%。通过数值求解基频光和拉曼光空间分布的速率方程并应用到被动调Q自拉曼Nd∶GdVO4激光器。获得的理论结果与实验结果大致相符。     

激光二极管抽运Cr4+:Nd3+:YAG自锁模自调Q激光器

采用光纤耦合半导体激光抽运,实现了Cr4+:Nd3+:YAG自锁模自调Q激光器1.06üm激光输出.当抽运功率超过阈值2.83 W时,激光器便运转在调Q锁模状态,其锁模调制深度达到80%以上.当抽运功率最大为5.72 W时,平均输出功率为233 mW,相应调Q包络的单脉冲能量为16.5üJ,调Q包络的脉冲宽度大约为120 ns.调Q包络中锁模脉冲之间的间隔为2.8 ns,这与光子在谐振腔内的往返时间相一致,对应的重复率为357 MHz,锁模脉冲宽度估计为560 ps.利用双曲正割函数,考虑腔内光子数密度的空间高斯分布、增益介质的受激辐射寿命和饱和吸收体的激发态寿命对激光特性的影响,建立了描述Cr4+:Nd3+:YAG晶体自调Q自锁模动力学过程的速率方程组.数值求解该方程组,与实验结果符合较好.     

LD抽运Nd∶YVO4自喇曼倍频黄光激光器

报道了LD抽运的自喇曼c切Nd∶YVO4调Q腔内倍频黄光激光器.Nd∶YVO4晶体同时作为激光介质和喇曼晶体，通过声光调Q技术，产生了1 178.7 nm的喇曼激光，经过KTP腔内倍频，输出589.4 nm黄光.测量了平均输出功率随抽运功率和脉冲重复率的变化.典型的1 066.7 nm基频光、1 178.7 nm喇曼光和589.4 nm倍频光的脉冲宽度分别为24.9 ns、11.2 ns和6.8 ns.在脉冲重复率为15 kHz，抽运功率为7.56W时，产生了平均功率为151 mW的589.4 nm光的输出.     

脉冲LDA泵浦Nd∶YVO4/GaAs被动调Q锁模激光器

用脉冲激光二极管阵列（LDA）作为泵浦源、微柱透镜阵列和透镜导管作为耦合系统,以As＋注入GaAs可饱和吸收片作为被动调Q锁模元件,实现了Nd∶YVO4激光器调Q锁模运转.调Q运转阶段,激光器每泵浦脉宽内输出一个调Q脉冲,调Q脉宽7ns.调Q锁模运转阶段,初始透过率60％的GaAs晶片对调Q包络内的锁模脉冲的调制深度达到95％以上,锁模脉冲重复频率991 MHz.研究了加在LDA上的电压、方波脉冲的脉宽和重复频率对调Q锁模脉冲特性的影响,并对实验结果进行了讨论.     

声光调Q的Nd:YVO4晶体1342 nm激光器

报道了采用光纤耦合激光二极管(LD)模块端面抽运Nd:YVO4晶体实现高功率、高重复频率声光调Q 1342 nm波长的激光输出,以及采用考虑增益频谱分布的调Q速率方程模型仿真研究该脉冲激光器的结果.在激光器注入总功率40 W的情况下,可得到最高工作重复频率100 kHz;在50 kHz重复频率工作条件下,可得到11.0 W的平均输出功率及稳定的脉冲输出.应用与介质增益频谱相关的调Q速率方程模型对该脉冲激光器进行了仿真研究,得到了脉冲宽度、脉冲峰值功率、脉冲建立时间等计算结果,还给出了输出在频谱上的分布以及谱宽,并与实验结果进行了比较.考虑增益频谱分布的调Q速率方程模型不仅可以应用于分析、设计脉冲激光器的频谱,而且由于考虑了增益在频谱上的实际分布,基于该模型的仿真计算可以获得比传统单频调Q速率方程更为接近实际的结果.     

Passively Q-switched laser operation in a composite Nd:YVO4/Nd:YVO4/Nd:YVO4 crystal with a GaAs saturable absorber

By using a piece of GaAs wafer as the saturable absorber, the performance of the passively Q-switched composite Nd:YVO₄ laser with different output couplers has been demonstrated for the first time as far as we know. The largest continuous wave output power of 1.52 W is obtained at the incident pump power of 5.31 W, giving an optical conversion efficiency of 28.7% and a slope efficiency of 30.2%. The shortest pulse width of 11 ns, the largest single-pulse energy of 2.49 μJ and the highest peak power of 190 W are also obtained.     

The acousto-optic Q-switched mode-locking Nd:YVO4 laser

Q-switched mode locking (QML) has been observed in acousto-optic Q-switched Nd:YVO₄ laser that contained no mode-locking components. It was found that QML was easily realized in a long cavity and the modulation depth was observed to increase with increased cavity length. The maximum modulation depth was as high as 90%. This phenomenon is explained by the introduction of gain-related effect in the gain medium. The longitudinal modes at higher frequency, than the central frequency of the gain profile, experience positive guiding, which results in mode locking of these modes.     

Q-switched and mode-locked diode-pumped Nd:YVO4 laser with an intracavity composite semiconductor saturable absorber

We have demonstrated a passively Q-switched and mode-locked Nd:YVO₄ laser with an intracavity composite semiconductor saturable absorber (ICSSA). Stable Q-switched and mode-locked pulses with Q-switched envelope pulse duration of 180 ns and pulse repetition rate of 72 KHz have been obtained. The maximum average output power was 1.45 W at 8 W incident pump power. The repetition rate of the mode-locked pulses inside the Q-switched envelope was 154 MHz. Experimental results revealed that this ICSSA was suitable for Q-switched and mode-locked solid-state lasers.     

Diode-pumped doubly Q-switched mode-locked YVO4/Nd:YVO4 laser with AO and GaAs saturable absorber

By using both acousto-optic (AO) modulator and GaAs saturable absorber, a diode-pumped doubly Q-switched and mode-locked (QML) YVO₄/Nd:YVO₄ laser is presented. The average output power and the pulse width of the Q-switched envelope have been measured. The Q-switch pulse energy of the doubly QML laser are higher than that only with GaAs. The stability of the QML laser with the dual-loss-modulation is significantly improved if compared to that only with GaAs.The experimental results show that the doubly QML YVO₄/Nd:YVO₄ laser has nearly 80% modulation depth and deeper than that of the singly passively QML pulse. The doubly Q-switched mode-locked pulse inside the Q-switched envelope has a repetition rate of 111 MHz and its pulse width is estimated to be about 700 ps. By using a hyperbolic secant square function and considering the Gaussian distribution of the intracavity photon density, the coupled equations for diode-pumped dual-loss-modulated QML laser is given and the numerical solutions of the equations are in good agreement with the experimental results.     

Characterization of laser-diode end-pumped intracavity frequency doubled, passively Q-switched and mode-locked Nd:YVO4 laser

Simultaneous Q-switching and mode-locking in a laser-diode end-pumped intracavity frequency doubled Nd:YVO₄/KTP green laser using Cr⁴⁺:YAG saturable absorber is experimentally demonstrated. The influence of the initial transmission (T₀) of the Cr⁴⁺:YAG crystal on the Q-switched mode-locked green pulses as well as on the average green power is characterized by using Cr⁴⁺:YAG crystal with various T₀. The effect of T₀ on the pulse build-up time in intracavity second harmonic configuration is theoretically investigated. It was found that the depth of modulation for the mode-locked pulses is greatly improved at the second harmonic wavelength as compared to that for the fundamental wavelength. The average pulse duration of the individual mode-locked pulse for the second harmonic beam measured to be less than 500 ps with a repetition rate of 400 MHz.     

High repetition rate passively Q-switched diode-pumped Nd:YVO4 laser

We demonstrated an efficient and compact, diode-pumped passively Q-switched Nd:YVO₄ laser operation at 1.064 μm wavelength with high repetition rate, using Cr⁴⁺:YAG as saturable absorber, formed with a simple flat–flat resonator. The maximum CW output power of 4.05 W was obtained at the incident pump power of 8 W. For Q-switched operation, the maximum average output power was measured to be 1.4 W with the corresponding repetition rate of 200 kHz, the pulse width of 60 ns when the initial transmission of Cr⁴⁺:YAG crystal was 85%. The shortest pulse width of 12 ns, the largest pulse energy of 36 μJ and the highest peak power of 3 kW were obtained when the Cr⁴⁺:YAG crystal with an initial transmission of 60% was used.     

Passively Q-switched Nd:GdVO4 laser with GaAs saturable absorber

A xenon flash-lamp-pumped, passively Q-switched Nd:GdVO₄ laser with GaAs semiconductor saturable absorber is demonstrated. The static laser performance is investigated and the static output is 52 mJ when the pump energy is 9.45 J. The dynamic laser has the highest slope efficiency when the GaAs wafer is both the saturable absorber and output coupler. Pulses with duration of 64 ns and dynamic output of 47.6 mJ are obtained when the pump energy is 9.45 J. The highest dynamic–static ratio is 0.9:1. The coupled rate equations are used to simulate the Q-switched process of laser. The theoretical and experimental results are compared and discussed.     

LD-pumped passively Q-switched Nd:YVO4 infrared and green lasers

A laser diode directly end-pumped, passively Q-switched Nd:YVO₄/Cr:YAG laser is presented in this paper. With 600 mW incident pump laser, Q-switched 1064 nm laser with an average power of 138 mW, pulse width of 19.8 ns, repetition rate of 170.1 kHz and peak power of 40.96 W is obtained. When a KTP crystal was inserted into the cavity, Q-switched 532 nm laser with an average power of 56 mW, pulse width of 28.4 ns, repetition rate of 118.2 kHz and peak power of 16.7 W is obtained at last.     

The thermal effect in diode-end-pumped continuous-wave 914-nm Nd:YVO4 laser

The thermal effect and the heat generation in diode-end-pumped continuous-wave 914-nm Nd:YVO₄ lasers are investigated in detail. A theoretical model of a diode end-pumped solid-state laser is constructed to analyse the influence of fractional thermal loading on the thermal effect in the Nd:YVO₄ laser based on finite element analysis. The thermal focal lengths and the end-surface deformations of laser rods in Nd:YVO₄ quasi-three-level and four-level lasers are measured and compared with the results obtained by ordinary interferometry for the demonstration of higher thermal loading in 914-nm laser. Finally the fractional thermal loading in the Nd:YVO₄ quasi-three-level laser is calculated by matching the experimental and the simulated end deformations.