300 eV—1GeV质子在硅中非电离能损的计算

非电离能损(NIEL)引起的位移损伤是导致空间辐射环境中新型光电器件失效的主要因素.引起质子在硅中NIEL的作用机理有库仑相互作用和核相互作用,质子能量范围从位移损伤阈能到1 GeV.当质子能量位于低能区时,库仑相互作用占主导地位,采用解析方法和TRIM程序计算NIEL;当质子能量位于高能区时,NIEL主要来自质子与靶原子核的弹性和非弹性相互作用,使用MCNPX/HTAPE3X进行模拟仿真计算由核反应引起的NIEL.实现了能量范围为300 eV—1 GeV的质子入射硅时NIEL的计算.计算结果表明,MCNPX/HTAPE3X可用于计算高能质子在材料中产生的反冲核所引起的NIEL,结合解析方法和TRIM程序可计算得到由于库仑相互作用引起的NIEL.     

质子在碳化硅中不同深度的非电离能量损失

利用蒙特卡罗方法,应用Geant4程序,模拟计算了1—500 MeV质子在碳化硅材料中的非电离能量损失,并研究了不同种类的初级反冲原子对非电离能量损失的贡献.模拟结果表明:在相同质子辐照下,碳化硅材料中的非电离能量损失要比硅、镓等半导体材料更小,说明碳化硅器件的稳定性更好,抗位移损伤能力更强;当靶材料足够厚时,在不同能量质子辐照下,材料损伤最严重的区域会随着质子入射能量的增加从质子射程末端逐渐前移到材料表面;不同种类的初级反冲原子对非电离能量损失的贡献表明,在低能质子辐照下,28Si和~(12)C是位移损伤的主要原因,而随着质子能量的增加,通过核反应等过程产生的次级离子迅速增多,并对材料浅层造成严重的位移损伤.     

非弹性核反应对质子束能量沉积的影响

提出了一种比较精确且又省时的质子穿透的解析算法,并给出了考虑核反应后50—250MeV质子在水中的能量沉积,与Monte-Carlo方法的结果进行了比较.结果表明:1)非弹性核反应对质子的能量沉积有明显的影响,特别是对较高能量的质子束入射情况;2)该方法计算效率比Monte Carlo方法高百倍以上.因此,本文方法解决了质子能量沉积计算中效率和精度之间的矛盾,有可能在质子束放射治疗中得到实际应用. 关键词： 质子能量沉积 核反应 截面     

塑料闪烁光纤在高能中子辐照下质子分布特性的数值模拟

 利用Geant4系统模拟了在高能中子照射下,塑料闪烁光纤中产生的反冲质子的分布特性,分析了入射中子能量分别为2,4,6,8 MeV时,产生的反冲质子能量和方向分布,给出了反冲质子在不同方向上的能量分布。结果表明:向前和向后出射的质子分布不对称;反冲质子的能量在零与入射中子能量之间连续地分布;接近垂直入射方向产生的质子数较多;入射中子能量越高,产生质子数越少;反冲质子的出射角度越小,其能量越大,即沿着入射中子方向的反冲质子能量较大,垂直入射方向的反冲质子能量较小。     

低能中子在锆中产生的辐照损伤的计算机模拟研究

以GEANT4为基础采用蒙特卡罗方法对能量为1 MeV的中子在锆 材料中的输运过程进行了模拟分析. 首先计算得出: 反冲核的能量主要分布在1 keV和15 keV之间, 中子和靶核发生两次弹性碰撞的平均空间距离为29.47 mm. 由于中子和靶核在发生连续两次弹性碰撞过程中产生的两个反冲核能量较低, 它们的空间距离又比较大, 由此可以推测出: 由初级离位原子产生的后续级联碰撞可以看做是一系列独立的子级联碰撞过程, 同时也计算了中子在靶材的不同深度区域内产生的反冲核数目和平均能量. 其次, 利用蒙卡方法计算得到的结果, 采用分子动力学方法, 分别计算了五种不同能量下的初级离位原子产生的级联碰撞情况, 给出了初级离位原子的能量与其产生的次级离位原子数目之间的关系以 及不同能量下的初级离位原子产生的损伤区域范围等情况, 通过蒙特卡罗方法和分子动力学方法的结合, 给出了能量为1 MeV的中子在锆材料中产生的初级辐照损伤分布图像. 关键词： 辐照损伤 级联碰撞 蒙特卡洛模拟 分子动力学     

质子和1MeV中子在硅中能量沉积的模拟计算

在现有中子截面数据和粒子与物质相互作用的理论基础上,编写了计算中子非电离能量损失(NIEL)和电离能量损失(IEL)程序,利用该程序和引进的TRIM95程序计算了1MeV中子和质子在硅中IEL和NIEL的大小和分布等,并对计算结果进行了分析和比较.     

C3+与Ne碰撞过程纯电离绝对截面的测量和研究

介绍了离子-原子碰撞过程中双微分绝对截面的计算方法.利用符合技术测量了中能区C³⁺+Ne碰撞系统的纯电离微分绝对截面. 将实验结果与多体经典蒙特卡罗方法计算结果进行对比后发现，纯电离截面随入射能量变化的趋势基本一致，对理论与实验产生差异的原因作了分析. 对多重电离的电离机制分析表明：高价态的反冲离子主要来自于俄歇贡献；随着入射能量的升高，电子-电子间的库仑作用也逐渐显现. 此实验方法可以用于相同实验装置上的各种反应出射道的绝对截面测量，入射离子种类及入射离子能量范围将得到拓展. 关键词： 离子-原子碰撞 绝对截面 纯电离     

CMOS器件60Coγ射线、电子和质子电离辐射损伤比较

利用TRIM95蒙特卡罗软件计算了质子在二氧化硅中的质量阻止本领和能量沉积,比较了质子在二氧化硅中的电离阻止本领与核阻止本领,分析了质子在材料的表面吸收剂量与灵敏区实际吸收剂量的关系.利用60Coγ射线、1MeV电子和2-9 MeV质子对CC4007RH和CC4011器件进行辐照实验,比较60Coγ射线和带电粒子的电离辐射损伤情况.实验结果表明,60Coγ射线、1MeV电子和2-7MeV质子辐照损伤效应中,在0V栅压下可以相互等效;在5V栅压下,以60Coγ射线损伤最为严重,1MeV电子的辐射损伤与60Coγ射线差别不大,9MeV以下质子辐射损伤总是小于60Coγ射线,能量越低,损伤越小.     

氮化镓在不同中子辐照环境下的位移损伤模拟研究

电子器件中的半导体材料经过中子辐照后产生大量位移损伤,进而影响器件性能,氮化镓(GaN)材料是第三代宽禁带半导体, GaN基电子器件在国防、空间和航天等辐射服役环境中具有重要应用.本文利用蒙特卡罗软件Geant4模拟了中子在GaN材料中的输运过程,对在大气中子、压水堆、高温气冷堆和高通量同位素堆外围辐照区四种中子辐照环境下GaN中的初级反冲原子能谱及加权初级反冲原子能谱进行了分析.研究发现:在四种辐照环境下GaN中初级反冲原子能谱中,均在0.58 MeV附近处出现不常见的"尖峰",经分析该峰为核反应产生的H原子峰,由于低能中子(n, p)反应截面较大,该峰的强弱和低能中子占总能谱的比例有关;通过对比四种中子辐照环境下GaN中初级反冲原子能谱分布可知,大气中子能谱辐照产生的初级反冲原子能量更低、分布范围更广,裂变堆能谱下较高能量的初级反冲原子的比例较大,大气中子和高通量同位素堆辐照环境下的初级反冲原子能谱与加权初级反冲原子谱形状更相似,结合核反应产物对电学性能的影响,高通量同位素堆外围辐照区更适合用于模拟GaN在大气中子环境下的辐照实验.该结果对GaN基电子器件在辐射环境下长期服役评估研究和GaN材料的反应堆模拟中子辐照环境实验研究具有参考价值.     

基于核数据的中子诱发原子离位损伤截面评估方法

中子辐照损伤是核能系统面临的重要挑战之一。中子辐照损伤是由中子核反应诱发的，通常通过离位损伤(用平均每原子离位数DPA计)量化。离位损伤的过程为中子核反应产生的反冲核，在辐照损伤中称为初级碰撞原子(Primary Knock-on Atom,PKA)，引发材料中原子级联碰撞产生，因此其评估需要基于中子核反应理论或相关核数据。由于现有评价核数据库中未包含全部反冲能谱分布，中子辐照导致的离位损伤截面需要基于已有微分截面与守恒方程计算。本工作回顾了中子辐照诱发离位损伤的两种计算思路、系统地归纳了不同核反应类型(包括离散与连续的两体反应、中子俘获反应以及多体反应)导致的离位损伤截面计算理论方法、并指出了现有方法的不足。最后，以事故容错包壳材料FeCrAl为例，基于ENDF/B-Ⅷ.0数据库计算了多组不同Cr与Al含量的离位损伤截面。初步研究结果表明FeCrAl的中子辐照离位损伤评估对其中Cr与Al含量的敏感性较低且高出Fe单质的DPA截面约3%～4%，因此DPA评估中可暂不考虑不同Cr与Al含量的影响。但Cr与Al的含量可能会影响离位阈能与损伤能量。     

Optimizing the rapidity limit for nuclear stopping in intermediate energy heavy-ion collisions

A systematic study regarding the role of participant matter and spectator matter in nuclear stopping using isospin-dependent quantum molecular dynamics model is presented. The simulations have been carried out with soft equation of state along with the reduced isospin-dependent cross section to study the effect of different types and sizes of rapidity distributions on nuclear stopping for the whole colliding geometry with density-dependent symmetry energy. In addition to that, we attempt to investigate the role of isospin in heavy-ion collisions by calculating the individual contribution of neutrons and protons in nuclear stopping for different systems having different isotopic content.     

库仑作用对同位旋分馏过程的影响

利用同位旋相关的量子分子动力学模型研究了中能重离子碰撞中库仑作用对同位旋分馏过程的影响.研究结果表明,在所研究的能区,无论是丰(缺)中子碰撞系统或者轻(重)反应系统,库仑作用都使同位旋分馏过程减弱,而这种影响主要来自于库仑作用对质子的排斥作用,使更多的质子发射,从而降低了气相中子–质子比所导致     

Proton-neutron correlation in the deuteron breakup at 56 MeV and prior-form DWBA analysis

Proton-neutron angular correlations in the ¹²C, ⁵¹V and ¹¹⁸Sn(d, pn) reactions have been measured at 56 MeV to investigate the deuteron breakup process. The elastic breakup which leaves the target nucleus in its ground state dominates the coincident spectra. The elastic breakup cross sections are estimated to be 36–48% of the inclusive breakup yields at 15° or 17.5°. In the angular correlations the protons are emitted predominantly on the side of the beam opposite to the neutrons. The experimental data have been analyzed using the prior-form DWBA. For both nuclear and Coulomb breakup, sufficient convergence of the calculations is obtained by including the pn angular momenta up to l = 2. For the nuclear breakup calculations, the l = 0 and 2 contributions dominate the cross sections. For the Coulomb breakup the l = 1 contribution is predominant. In the calculations the effect of the Coulomb breakup is seen at forward angles of the angular correlation. The DWBA calculations reproduce fairly well the coincident energy spectra and the angular correlations in the angular region where the protons are emitted on the side of the beam opposite to the neutrons. On the other hand the calculations overestimate the break-up cross sections by a factor of 2 to 10 in the angular region where the protons are emitted on the same side of the beam as the neutrons. The distributions of deuteron c.m. angular momenta that contribute to the breakup amplitude are examined to obtain information on the region of space in which the breakup reactions takes place.     

Energy loss by keV ions in silicon

Using silicon photodiodes with an ultrathin passivation layer, the average total energy lost to silicon target electrons (electronic stopping) by incident low energy ions and the recoil target atoms they generate is directly measured. We find that the total electronic energy deposition and the ratio of the total nuclear to electronic stopping powers for the incident ions and their recoils each follow a simple, universal representation, thus enabling systematic prediction of ion-induced effects in silicon. We also observe a velocity threshold at 0.05 a.u. for the onset of electronic stopping.     

Attosecond physics with neutrons and electrons: Ultrafast entanglement and decoherence phenomena involving protons in condensed matter and molecules

Nuclei and electrons in condensed matter and/or molecules are usually entangled, due to the prevailing electromagnetic interactions. Usually, the “environment” of a microscopic scattering system (e.g., a proton) causes an ultrafast decoherence, thus making atomic and/or nuclear entanglement effects not directly accessible to experiments. However, neutron Compton scattering (NCS) and electron Compton scattering represent ultrafast techniques operating in the sub-femtosecond timescale, thus opening a way for investigation of such dehoherence and short-lived entanglement phenomena of atoms in molecules and condensed matter. The experimental context of NCS and a new striking scattering effect from protons (H-atoms) in several condensed systems and molecules are described. In short, one observes an “anomalous” decrease of scattering intensity from protons, which seem to become partially “invisible” to the neutrons. The experiments apply large energy (several electronvolts) and momentum (10–200 Å^?1 transfers, and the collisional (or scattering) time between the neutron and a struck proton is only 100–1000 attoseconds long. Similar results are also obtained with electron-atom Compton scattering at large momentum transfers. As an example, we present new NCS experimental results from a single crystal, which also provide new physical insights into the attosecond quantum dynamics of protons in molecules and condensed matter. Theoretical discussions and models are presented which show that the effect under consideration is caused by the non-unitary time evolution (due to decoherence) of open quantum systems during the ultrashort, but finite, time-window of the neutron-proton scattering process. The conceptual connection with the well known Quantum Zeno Effect is pointed out. The experimental results, together with their qualitative interpretation “from first principles,” show that epithermal neutrons being available at spallation sources, and electron spectrometers providing large momentum transfers, may represent novel tools for investigation of thus far unknown physical and chemical attosecond phenomena.     

质子照相中基于能量损失的密度重建

提出了一种质子能量在中高能时利用能量损失进行密度重建的方法,并利用Bethe-Bolch公式给出了利用能量损失进行密度重建的方程及条件.针对1.6 GeV的质子能量,通过定量计算常见材料的阻止本领,得出质子能量在1.45–1.6 GeV范围内时,材料的阻止本领的变化率小于1%,可近似为常数.最后,通过理论计算和Geant 4模拟,得出质子能量在1.6 GeV时,可以对面密度为113 g/cm²的缩比法国实验客体进行密度重建.     

Isovector,isoscalar and Coulomb contributions to the mean field in 208Pb

We investigate the difference between the real parts of the mean fields felt by protons and neutrons in ²⁰⁸Pb, as evaluated from the iterative dispersion relation approach. This difference is decomposed into two contributions, namely a Coulomb correction to the average Coulomb potential felt by protons, and an isovector potential due to the existence of a neutron excess in ²⁰⁸Pb. It is shown that the volume integrals of these two contributions display a pronounced maximum near the Fermi energy; this feature is due to dispersive corrections to the Hartree-Fock type approximation, and mainly reflect the energy dependence of the surface properties of the isovector and Coulomb correction contributions. The energy dependence of the volume integrals of the imaginary parts of the isovector and Coulomb correction contributions is evaluated, as well as that of the real part of the isoscalar component of the mean field.     

On the use of averaging stopping power of recoiled nuclei for determining maximum neutron energy of 241Am–Be by superheated drop detectors

The average stopping power of the recoiled nuclei generated by neutron elastic interactions with the Freon-12 drops in a superheated drop detector has been used to determine the maximum neutron energy of the ²⁴¹Am–Be source. In an elastic interaction of neutrons with the Freon-12 liquid, the nuclei of ¹²C, ¹⁹F and ³⁵Cl with different values of stopping power are scattered. The stopping power of these scattered nuclei corresponding to the energy transferred to them through the head-on collision was extracted from the SRIM code. The stopping power values were weighted by considering the neutron–nucleus elastic scattering cross section and the number of each nucleus in the Freon-12 molecule and the average stopping power was calculated from known neutron energy.The maximum energy of the ²⁴¹Am–Be neutron source was estimated as 10.9 ± 3.0 MeV. The consistency between the determined energy and the other reported values confirms the validity of using the average stopping power in the superheated drop detectors. The average stopping power was also used to determine the threshold neutron energy as a function of external applied pressure at different temperatures. Knowing the threshold neutron energy as function of applied pressure, can be used in pressure scanning method for neutron spectrometry by superheated drop detectors.     

High resolution measurements of energy spectra of protons scattered from silicon crystals in the case of planar channelling

The energy spectrum of backscattered protons in the case of incidence along several planar directions shows a fine structure near the high-energy edge. This structure, an oscillatory dependence of the probability of backscattering vs. depth in the crystal, offers a possibility to study the proton trajectory in the lattice and also to obtain the stopping power of protons near planes in silicon.

Application of a simple model for the proton trajectory yields a stopping power near the planes 4 to 5 times higher than for random incidence. These effects have been observed using primary energies in the range 40–140 keV and for incidence along (110). (111), (100) and (112) planes.