Compositionally asymmetrical multiquantum wells: “Pseudo-molecules” for giant optical nonlinearities in the infrared (9–11 μm)

Intersubband transitions in quantum well have extremely large oscillator strengths and induce strong nonlinear effects in structures where inversion symmetry is broken, realized by growing AlGaAs quantum wells with asymmetrical A1 gradients. These compositionally asymmetrical multiquantum wells may thus be viewed as giant “quasimolecules” optimized for optimal nonlinearities in the mid infrared. Optical rectification as well as second harmonic generation have been measured in those structures using a continuous CO₂ laser. At 10.6 μm the nonlinear coefficients are more than 3 orders of magnitude higher in these samples than for bulk GaAs (i.e. χ₀⁽²⁾ = 5.3 × 10⁻⁶m/V, χ_2ω⁽²⁾ = 7.2 × 10⁻⁷ m/V) and are in good agreement with theoretical predictions. We present more complex “pseudo-molecules” involving weakly coupled quantum wells. The optical rectification effects in these devices are so large χ₀⁽²⁾ = 1.6 × 10⁻³ m/V) that application to infrared detection may be envisioned.     

The multidimensional filter diagonalization method

The theory and numerical aspects of the recently developed multidimensional version of the filter diagonalization method (FDM) are described in detail. FDM can construct various "ersatz" or "hybrid" spectra from multidimensional time signals. Spectral resolution is not limited by the time-frequency uncertainty principle in each separate frequency dimension, but rather by the total joint information content of the signal, i.e., N(total) = N(1) x N(2) x vertical ellipsis x N(D), where some of the interferometric dimensions do not have to be represented by more than a few (e.g., two) time increments. It is shown that FDM can be used to compute various reduced-dimensionality projections of a high-dimensional spectrum directly, i.e., avoiding construction of the latter. A subsequent paper (J. Magn. Reson. 144, 357-366 (2000)) is concerned with applications of the method to 2D, 3D, and 4D NMR experiments.     

Exceptional sensitivity to neutrino parameters with a two-baseline Beta-beam set-up

We examine the reach of a Beta-beam experiment with two detectors at carefully chosen baselines for exploring neutrino mass parameters. Locating the source at CERN, the two detectors and baselines are: (a) a 50 kton iron calorimeter (ICAL) at a baseline of around 7150 km which is roughly the magic baseline, e.g., ICAL@INO, and (b) a 50 kton Totally Active Scintillator Detector at a distance of 730 km, e.g., at Gran Sasso. We choose ⁸B and ⁸Li source ions with a boost factor γ of 650 for the magic baseline while for the closer detector we consider ¹⁸Ne and ⁶He ions with a range of Lorentz boosts. We find that the locations of the two detectors complement each other leading to an exceptional high sensitivity. With γ=650 for ⁸B/⁸Li and γ=575 for ¹⁸Ne/⁶He and total luminosity corresponding to 5×(1.1×10¹⁸) and 5×(2.9×10¹⁸) useful ion decays in neutrino and antineutrino modes respectively, we find that the two-detector set-up can probe maximal CP violation and establish the neutrino mass ordering if sin²2θ₁₃ is 1.4×10⁻⁴ and 2.7×10⁻⁴, respectively, or more. The sensitivity reach for sin²2θ₁₃ itself is 5.5×10⁻⁴. With a factor of 10 higher luminosity, the corresponding sin²2θ₁₃ reach of this set-up would be 1.8×10⁻⁵, 4.6×10⁻⁵ and 5.3×10⁻⁵ respectively for the above three performance indicators. CP violation can be discovered for 64% of the possible δ_CP values for sin²2θ₁₃10⁻³ (8×10⁻⁵), for the standard luminosity (10 times enhanced luminosity). Comparable physics performance can be achieved in a set-up where data from CERN to INO@ICAL is combined with that from CERN to the Boulby mine in United Kingdom, a baseline of 1050 km.     

Experimental evaluation of flame observables for simplified scalar dissipation rate measurements in laminar diffusion flamelets

We present a comparative evaluation of the potential of several flame observables to yield a simplified measurement of the scalar dissipation rate (χ). The realization of the importance of this quantity for the structure of diffusion flamelets has led to brilliant experimental efforts targeted to its measurement, with a particular emphasis on χ_stoich, i.e., its value at the stoichiometric surface, which has been shown to control extinction. Such measurements require a significant amount of experimental resources, since they necessitate the simultaneous acquisition of multi-scalar data. The possibility of a simplified measurement stems from the realization that the related gradient of the mixture fraction scales as the inverse of an appropriately defined thickness of the mixing layer. In this paper, we investigate experimentally the utilization of several flame observables for the measurement of this thickness. In a flat, nitrogen diluted, counterflow, methane/oxygen diffusion flame, the scalar dissipation rate was first measured directly using line Raman imaging of major species and a N₂-molecule based definition of the mixture fraction. Additionally, LIF measurements of the hydroxyl radical (OH) and formaldehyde (HCHO) as well as Raman measurements of carbon monoxide (CO) were performed across the flamelet. The precision of χ_stoich estimates based on the thickness of the layers of these three observables as well as the layers corresponding to [HCHO] × [OH] and [CO] × [OH] “overlap” zones was evaluated in terms of following the theoretically expected inverse-square-root dependence on strain rate. Also, the absolute thickness of these layers was recorded, since it may restrict the application of simplified techniques in turbulent flow fields.     

On the theory of temporal aberrations for cathode lenses

A new approach to the theory of temporal aberration for cathode lenses is given in the present paper. A definition of temporal aberration is given in which a certain initial energy of electron emission along the axial direction ε_z1 (0ε_z1ε_0max) is considered. A new method to calculate the temporal aberration coefficients of cathode lenses named “direct integral method” is also presented. The “direct integral method” gives new expressions of the temporal aberration coefficients which are expressed in integral forms. The difference between “direct integral method” and “τ-variation method” is that the “τ-variation method” needs to solve the differential equations for the three of temporal geometrical aberration coefficients of second order, while the “direct integral method” only needs to carry out the integral calculation for all of these temporal aberration coefficients of second order.All of the formulae of the temporal aberration coefficients deduced from “direct integral method” and “τ-variation method” have been verified by an electrostatic concentric spherical system model, and contrasted with the analytical solutions. Results show that these two methods have got identical solutions and the solutions of temporal aberration coefficients of the first and second order are the same as with the analytical solutions. Although some forms of the results seem different, but they can be transformed into the same form. Thus, it can be concluded these two methods given by us are equivalent and correct, but the “direct integral method” is related to solve integral equations, which is more convenient for computation and could be suggested for use in practical design.     

Effects of superstrings in collisions

Superstring theory in d = 10 dimensions after Calabi—Yau compactification yields a minimum low-energy gauge group SU(3)_C × SU(2)_L × U(1)_Y × U(1)_E. The low-energy theory includes particles with the quantum numbers of 27 representations of E₆, each of which contains an extra neutrino ν^c conventionally called a “right-handed neutrino”. The contributions of ν and ν^c to through Z⁰ and Z_E mixing is calculated. Small contributions are found of the new right-handed neutrino and of the superstring boson Z_E to σ(e⁺e⁻ → γ + nothing).     

Growth of single crystal PrFeAsO1−y and its characterization

We have successfully grown single crystals of oxygen deficient oxypnictide superconductor PrFeAsO_1−y using high pressure synthesis technique. Typical crystal size is about 600 × 800 × 30 μm³, with its T_c = 44 K. Their resistivity measurements under magnetic field yield the anisotropic factor Γ  5, consistent with previous results on smaller single crystals.     

Modified Kolmogorov wave turbulence in QCD matched onto “Bottom-up” thermalization

We investigate modification of Kolmogorov wave turbulence in QCD calculating gluon spectra as functions of time in the presence of a low energy source which feeds in energy density in the infrared region at a time-dependent rate. Then considering the picture of saturation constraints as has been constructed in the “bottom-up” thermalization approach we revisit that picture for RHIC center-mass energy, W=130 GeV, and also extend it to LHC center-mass energy, W=5500 GeV, thus for two cases having an opportunity to calculate the equilibration time, τ_eq|therm, of the gluon system produced in a central heavy ion collision at mid-rapidity region. Thereby, at RHIC and LHC energies we can match the equilibration time, obtained from the late stage gluon spectrum of the modified Kolmogorov wave turbulence, onto that of the “bottom-up” thermalization and other evolutional approaches as well. In addition, from the revised “bottom-up” approach we find the gluon liberation coefficient to be on the average, ε0.81–1.06 at RHIC and ε0.50–0.56 at LHC. We also present other phenomenological estimates of τ_therm which, at QCD realistic couplings, yield 0.45–0.65 fmτ_therm0.97–2.72 fm at RHIC and 0.31–0.40 fmτ_therm0.86–2.04 fm at LHC. We show that the second upper-bounds of τ_therm in both cases are due to the late stage gluon spectrum of the original Kolmogorov wave turbulence in QCD, previously deduced with a low energy source which feeds in energy density at a constant rate. On the other hand, the lower-bounds and first upper-bounds of τ_therm are due to the late stage gluon spectrum of the modified QCD wave turbulence, deduced here at the specific time-dependent rate. In the latter case, at certain conditions, taking also into account both very small and realistic couplings we give estimates: 0.65 fmτ_therm1.29 fm at RHIC and 0.52 fmτ_therm1.16 fm at LHC, as well as at realistic couplings we find 0.53<τ_therm<0.7 fm at RHIC and 0.41<τ_therm<0.65 fm at LHC.     

Influence of oxygen growth pressure on laser ablated Cr-doped In2O3 thin films

We present a systematic investigation of the effects of oxygen growth pressure on the structural, optical, and electrical properties of In₂O₃:Cr thin films grown by pulsed laser deposition. X-ray diffraction analysis showed increases in lattice constant from 10.103 Å to 10.337 Å, and in particle size from 13.9 nm to 35.5 nm as the oxygen growth pressure increased from 7.5 × 10⁻⁶ Torr to 7.5 × 10⁻³ Torr, respectively. The observed shift in the X-ray diffraction peaks to lower angles was assumed to be caused by the reduction in the lattice defect density, precisely oxygen vacancies. The optical transparency increased with partial oxygen pressure (P_O2), and an average transmittance of 85% was obtained at 7.5 × 10⁻³ Torr. The films are highly conducting with resistivity as low as 2 × 10⁻⁴ Ω cm and mobility as high as 133 cm/V s. Temperature dependent resistivity measurements in the 45 < T < 300 K temperature range reveal that films grown at 7.5×10⁻⁶≤P_O2≤7.5×10⁻⁴ Torr exhibit negative temperature coefficient of resistivity (TCR) below approximately T = 60 K, T = 120 K, T = 160 K; then positive TCR in the temperature intervals 60 < T < 300 K, 120 < T < 300 K, and 160 < T < 300 K, respectively. This suggests that two disparate mechanisms govern electrical dc transport in the two temperature regions. Film grown at P_O2 of 7.5 × 10⁻³ Torr displayed typical semiconducting behavior with negative TCR in the whole temperature region.     

Statistics of ideal randomly branched polymers in a semi-space

We investigate the statistical properties of a randomly branched 3-functional N-link polymer chain without excluded volume, whose one point is fixed at the distance d from the impenetrable surface in a 3-dimensional space. Exactly solving the Dyson-type equation for the partition function Z(N, d )= N^-θe^γN in 3D, we find the “surface” critical exponent θ = , as well as the density profiles of 3-functional units and of dead ends. Our approach enables to compute also the pairwise correlation function of a randomly branched polymer in a 3D semi-space.     

Effective spin susceptibility, electron mass and Landé factor in two-dimensional (2D) Si inversion layers

We have studied the silicon (Si) band-structure, electron–electron and electron-ionized donor interaction effects on our accurate and approximate results (AcR and ApR) for renormalized effective spin susceptibitity (RESS), electron mass (EEM), Landé factor and spin polarization in the impure 2D Si (electron system), showing that:(i) our ApR, being strongly deviated from our AcR, reproduces approximately all the data obtained recently by Pudalov et al. (Phys. Rev. Lett. 88 (2002) 196404) [in particular, RESS =4.7 at the critical value of Wigner–Seitz radius r_s: r_s=r_c≈8.5 at which occur the “apparent” metal–insulator transition (MIT)] and can also be compared with other ApRs found in the recent literature,(ii) both the RESS and EEM produce physical singularities at the same critical value: r_s=r_c11.05661 (weakly disordered samples) at which occurs the “true” MIT; the existence of such two “apparent and true” critical values in this impure system agrees with a recent discussion by Abrahams et al. (Rev. Mod. Phys. 73 (2001) 251), and(iii) at r_s=r_c=8.5, at which occurs the “apparent” MIT, our AcR for effective spin polarization and the corresponding result, obtained using a disordered Hubbard model and a determinant quantum Monte Carlo method by Denteneer and Scalettar (Phys. Rev. Lett. 90 (2003) 246401), both give the same result: ξ_eff.=ξ_c0.31 at B0.4 T, which is found to be lower than the critical parallel magnetic field for full spin polarization, B_c=1.29 T, supporting thus the existence of such an “apparent” MIT.     

Rashba polarization in HgCdTe inversion layers at large depletion charges

The Rashba effect in metal–insulator–semiconductor (MIS) structures based on zero-gap HgCdTe is investigated experimentally and theoretically over a wide doping range N_A–N_D=3×10¹⁵–3×10¹⁸ cm⁻³. Increase of doping enlarges the magnitude of the effect at the same 2D concentration and strengthens a gate-voltage dependence of the Rashba splitting. The results demonstrate values of Rashba polarization as high as P_R0.5 and a capability to control the Rashba effect strength at constant electron concentration.     

Detection of electric quadrupole transitions in the oxygen A band at 7600 Å

Observations of the sun at low altitude have been used to detect the ^TS (electric quadrupole) branch of the “A” band of atmospheric oxygen at 7600 Å. Line strengths, line-widths, and wavenumbers are tabulated for the eight observable lines, N″ = 5 to 19. These quadrupole transitions are found to be weaker than the main magnetic dipole transitions by a factor of 3 × 10⁻⁶.     

Two types of hadrons

Resonances and enhancements in meson–meson scattering can be divided into two classes distinguished by their behavior as the number of colors (N_c) in QCD becomes large: The first are ordinary mesons that become stable as N_c→∞. This class includes textbook mesons as well as glueballs and hybrids. The second class, extraordinary mesons, are enhancements that disappear as N_c→∞; they subside into the hadronic continuum. This class includes indistinct and controversial objects that have been classified as mesons or meson–meson molecules. Peláez's study of the N_c dependence of unitarized chiral dynamics illustrates both classes: the p-wave ππ and Kπ resonances, the ρ(770) and K^*(892), behave as ordinary mesons; the s-wave ππ and Kπ enhancements, the σ(600) and κ(800), behave like extraordinary mesons. Ordinary mesons resemble Feshbach resonances while extraordinary mesons look more like effects due to potentials in meson–meson scattering channels. I build and explore toy models along these lines. Finally I discuss some related dynamical issues affecting the interpretation of extraordinary mesons.     

Pseudo scalar contributions to light-by-light correction of muon in AdS/QCD

We have performed a holographic calculation of the hadronic contributions to the anomalous magnetic moment of the muon, using the gauge/gravity duality. As a gravity dual model of QCD with three light flavors, we study a U(3)_L×U(3)_R flavor gauge theory in the five-dimensional AdS background with a hard-wall cutoff. The anomalous (electromagnetic) form factors for the pseudo scalars, π⁰, η and η^′, are obtained from the 5D Chern–Simons term of the gravity dual, which correctly reproduce the asymptotic behavior of the form factor, dictated by QCD. We find the total light-by-light contributions of pseudo scalars to the muon anomalous magnetic moment, , which is consistent with previous estimates, based on other approaches.     

Thermal oxidation of n-type ZnN films made by -sputtering from a zinc nitride target, and their conversion into p-type films

Transparent p-type thin films, containing zinc oxide phases, have been fabricated from the oxidation of n-type zinc nitride films. The zinc nitride thin films were deposited by rf-magnetron sputtering from a zinc nitride target in pure N₂ and pure Ar plasma. Films deposited in Ar plasma were conductive (resistivity 4.7×10⁻² Ω cm and carrier concentrations around 10²⁰ cm⁻³) Zn-rich Zn_xN_y films of low transmittance, whereas Zn_xN_y films deposited in N₂ plasma showed high transmittance (>80%), but five orders of magnitude lower conductivity. Thermal oxidation up to 550 C converted all films into p-type materials, exhibiting high resistivity, 10²–10³ Ω cm, and carrier concentration around 10¹³ cm⁻³. However, upon oxidation, the Zn_xN_y films did not show the zinc oxide phase, whereas Zn-rich Zn_xN_y films were converted into films containing ZnO and ZnO₂ phases. All films exhibited transmittance >85% with a characteristic excitonic dip in the transmittance curve at 365 nm. Low temperature photoluminescence revealed the existence of exciton emissions at 3.36 and 3.305 eV for the p-type zinc oxide film.     

Interband absorption and luminescence in small quantum dots under strong magnetic fields

Interband absorption and luminescence of quasi-two-dimensional, circularly symmetric, N_e-electron quantum dots are studied at high magnetic fields, 8B60 T, and low temperatures, T2 K. In the N_e=0 and 1 dots, the initial and final states of such processes are fixed, and thus the dependence on B of peak intensities is monotonic. For larger systems, ground state rearrangements with varying magnetic field lead to substantial modifications of the absorption and luminescence spectra. Collective effects are seen in the N_e=2 and 3 dots at “filling fractions” and .     

Rotational absorption spectrum of methylene fluoride in the 20–100 cm region

The pure rotational spectrum of CH₂F₂ was recorded in the 20–100 cm⁻¹ spectral range and analyzed to obtain rotation and centrifugal distortion constants. Analysis of the data yielded rotation constants: A = 1.6392173 ± 0.0000015, B = 0.3537342 ± 0.00000033, C = 0.3085387 ± 0.00000027, τ_aaaa = −(7.64 ± 0.46) × 10⁻⁵, τ_bbbb = −(2.076 ± 0.016) × 10⁻⁶, τ_cccc = −(9.29 ± 0.12) × 10⁻⁷, T₁ = (4.89 ± 0.20) × 10⁻⁶, and T₂ = −(1.281 ± 0.016) × 10⁻⁶cm⁻¹.     

In-plane gate transistors in AlxGa1−xN/GaN heterostructures written by focused ion beams

Focused ion beam implantation of gallium and dysprosium was used to locally insulate the near-surface two-dimensional electron gas of Al_xGa_1−xN/GaN heterostructures. The threshold dose for insulation was determined to be 2×10¹⁰ cm⁻¹ for 90 keV Ga⁺ and 1×10⁹ cm⁻¹ for 200 keV Dy²⁺ at 4.2 K. This offers a tool not only for inter-device insulation but also for direct device fabrication. Making use of “open-T” like insulating line patterns, in-plane gate transistors have been fabricated by focused ion beam implantation. An exemplar with a geometrical channel width of 1.5 μm shows a conductance of 32 μS at 0 V gate voltage and a transconductance of around 4 μS, which is only slightly dependent on the gate voltage.     

Large area SiC substrates and epitaxial layers for high power semiconductor devices — An industrial perspective

We review the progress in the industrial production of SiC substrates and epitaxial layers for high power semiconductor devices. Optimization of SiC bulk growth by the sublimation method has resulted in the commercial release of 100 mm n-type 4H-SiC wafers and the demonstration of micropipe densities as low as 0.7 cm⁻² over a full 100 mm diameter. Modelling results link the formation of basal plane dislocations in SiC crystals to thermoelastic stress during growth. A warm-wall planetary SiC-VPE reactor has been optimized up to a 8×100 mm configuration for the growth of uniform 0.01–80-micron thick, specular, device-quality SiC epitaxial layers with low background doping concentrations of <1×10¹⁴ cm⁻³, and intentional p- and n-type doping from 1×10¹⁵ to >1×10¹⁹ cm⁻³. We address the observed degradation of the forward characteristics of bipolar SiC PiN diodes [H. Lendenmann, F. Dahlquist, J.P. Bergmann, H. Bleichner, C. Hallin, Mater. Sci. Forum 389–393 (2002) 1259], and discuss the underlying mechanism due to stacking fault formation in the epitaxial layers. A process for the growth of the epitaxial layers with a basal plane dislocation density <10 cm⁻² is demonstrated to eliminate the formation of these stacking faults during device operation [J.J. Sumakeris, M. Das, H.McD. Hobgood, S.G. Müller, M.J. Paisley, S. Ha, M. Skowronski, J.W. Palmour, C.H. Carter Jr., Mater. Sci. Forum 457–460 (2004) 1113].