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1.
Formation of the La2Cu1−xCoxO4+δ solid solutions with orthorhombic K2NiF4-type structure was found to be in the range of 0≤x≤0.30 at temperatures above 1270 K. Incorporating cobalt into the copper sublattice of lanthanum cuprate leads to increasing oxygen hyperstoichiometry and decreasing electrical conductivity. Thermal expansion coefficients of the La2Cu1−xCoxO4+δ (x=0.02–0.30) ceramics at 470–1100 K were calculated from the dilatometric data to vary in the range (12.2–13.2)×106 K1. Studying the dependence of oxygen permeation fluxes through La2Cu(Co)O4+δ on the membrane thickness demonstrated that the oxygen transport at the thickness values below 1 mm is limited by both surface exchange rate and bulk ionic conductivity. Oxygen permeability of the La2Cu1−xCoxO4+δ solid solutions was ascertained to increase with cobalt concentration at x=0.02–0.10 and to decrease with further dopant additions, indicating a participation of interstitial oxygen in the ionic transport.  相似文献   

2.
A series of apatite-type La–Ge–O ceramics were prepared and their cation-defect at the 4f+6h sites and oxide ion-defect at 2a site were investigated. In LaxGe6O12+1.5x ceramics of x=6–12, the higher conductivities were obtained in the region of apatite composition, Lax(GeO4)6O1.5x−12 (x=8–9.33), and the highest conductivity was achieved for La9(GeO4)6O1.5 (x=9), where the number of cation (La3+) occupying the 4f+6h sites is 9 and the number of oxide ion occupying the 2a site is 1.5. The ceramics with cation- and oxide ion-defects were La9−0.66xSrx(GeO4)6O1.5 (x=0–1), La9−1.33xZrx(GeO4)6O1.5 (x=0–1), La9−xSrx(GeO4)6O1.5−0.5x (x=0–3), La9−xZrx(GeO4)6O1.5+0.5x (x=0–1), Lax(GeO4)3x−21(AsO4)27−3xO1.5 (x=0–3), Lax(GeO4)33−3x(AlO4)3x−27O1.5 (x=0–3), La9(GeO4)6−x (AlO4)xO1.5−0.5x (x=0–3), La9(GeO4)6−x(AsO4)xO1.5+0.5x (x=0–1), La9.33−xSrx(GeO4)6O2−0.5x (x=0–1.2) and Lax(GeO4)4.5(AlO4)1.5O1.5x−12.75 (x=8.8–9.83), which were prepared by the partial substitution of La3+and GeO44−of the basic apatite La9(GeO4)6O1.5 with Sr2+ or Zr4+ and AlO45− or AsO43−. Such substitutions lowered the conductivity of La9(GeO4)6O1.5. These results were discussed by the electrostatic interaction between Sr2+, Zr4+, AlO45− or AsO43− and oxide ion as a conductive species.  相似文献   

3.
Mixed oxides in the system S-Ce-Co-O were prepared by solid state reaction and by freeze-drying of precursor compounds followed by thermal treatment. Two types of perovskite oxides exist in the system: Solid solutions of the type Sr1 − yCeyCoO3 − x and mixed oxides of the type (1 − y)SrCeO3 − ySrCoO3 − x. Microstructures and phase compositions were determined by electron microscopy and X-ray diffraction. SrCoO3 − x forms a solid solution of ceria on the A-site in the strontium cobaltite lattice up to 0.15 mol Ce. This solid solution corresponds to the high-temperature structure of pure SrCoO3 − x and is characterized by high oxygen exchange and electrical conductivity. The oxygen deficiency x was measured by solid electrolyte coulometry. The oxygen deficiency of solid solutions Sr1 − yCeyCoO3 − x increases with temperature and decreases with pO2 in the ambient atmosphere and with increasing Ce dopant concentration. The pO2-T-x diagram of the solid solution was determined. The T, pO2 and dopant concentration dependencies of electrical conductivity were measured by a four-point d.c. technique. By Ce doping strontium cobaltite becomes a stabilized high-conductive material (maximum conductivity: 500 S cm−1 at 400 °C, Ea = 0.025 eV, p-type). Above this temperature the T-coefficient of the conductivity changes from positive (semiconducting) to negative values.  相似文献   

4.
The maximum solid solubility of gallium in the perovskite-type La1−xSrxFe1−yGayO3−δ (x=0.40–0.80; y=0–0.60) was found to vary in the approximate range y=0.25–0.45, decreasing when x increases. Crystal lattice of the perovskite phases, formed in atmospheric air, was studied by X-ray diffraction (XRD) and neutron diffraction and identified as cubic. Doping with Ga results in increasing unit cell volume, while the thermal expansion and total conductivity of (La,Sr)(Fe,Ga)O3−δ in air decrease with gallium additions. The average thermal expansion coefficients (TECs) are in the range (11.7–16.0)×10−6 K−1 at 300–800 K and (19.3–26.7)×10−6 K−1 at 800–1100 K. At oxygen partial pressures close to atmospheric air, the oxygen permeation fluxes through La1−xSrxFe1−yGayO3−δ (x=0.7–0.8; y=0.2–0.4) membranes are determined by the bulk ambipolar conductivity; the limiting effect of the oxygen surface exchange was found negligible. Decreasing strontium and gallium concentrations leads to a greater role of the exchange processes. As for many other perovskite systems, the oxygen ionic conductivity of La1−xSrxFe1−yGayO3−δ increases with strontium content up to x=0.70 and decreases on further doping, probably due to association of oxygen vacancies. Incorporation of moderate amounts of gallium into the B sublattice results in increasing structural disorder, higher ionic conductivity at temperatures below 1170 K, and lower activation energy for the ionic transport.  相似文献   

5.
A new lithium ionic conductor of the thio-LISICON (LIthium SuperIonic CONductor) family was found in the binary Li2S–P2S5 system; the new solid solution with the composition range 0.0≤x≤0.27 in Li3+5xP1−xS4 was synthesized at 700 °C and characterized by X-ray diffraction measurements. Its electrical and electrochemical properties were studied by ac impedance and cyclic voltammetry measurements, respectively. The solid solution member at x=0.065 in Li3+5xP1−xS4 showed the highest conductivity value of 1.5×10−4 S cm−1 at 27 °C with negligible electronic conductivity and the activation energy of 22 kJ mol−1 which is characteristic of high ionic conduction state. The extra lithium ions in Li3PS4 created by partial substitution of P5+ for Li+ led to the large increase in ionic conductivity. In the solid solution range examined, the minimum conductivity was obtained for the compositions, Li3PS4 (x=0.0 in Li3+5xP1−xS4) and Li4P0.8S4 (x=0.2 in Li3+5xP1−xS4); this conductivity behavior is similar to other thio-LISICON family with the general formula, LixM1−yMy′S4 (M=Si, Ge, and M′=P, Al, Zn, Ga, Sb). Conduction mechanism and the material design concepts are discussed based on the conduction behavior and the structure considerations.  相似文献   

6.
7.
Pr concentration dependence of the superconducting transition temperature Tc in the Ho1−xPrxBa2Cu3O7−δ system is determined from measurements of DC electrical resistance. This dependence coincides with that for the parallely studied Y1−xPrxBa2Cu3O7−δ reference system. Both systems have the same value of the critical concentration xc=0.58, in accordance with nearly equal ionic radii of Ho3+ and Y3+ ions. It has been shown that the Tc(x) curve can be described with a single mechanism based on a decreasing number of sheet holes trapped by PrIV-ions, if one takes also into account that the number of these ions changes with x.  相似文献   

8.
The polarized Raman spectra of Nd1+xBa2−xCu3O7−δ (−0.023≤x≤0.107) and Pr1+xBa2−xCu3O7−δ (0.01≤x≤0.15) single crystals have been investigated. It was found that the Cu(2) Ag mode softens by 6 cm−1 in Nd 1:2:3 and 4 cm−1 in Pr 1:2:3 as x increases. These frequency shifts cannot be explained by the change in the relevant bond lengths due to Nd(Pr)-substitution for Ba. The variations with x of the two low frequency modes may be affected by change of their hybridization and/or change of their force constants. The linewidths of Ba mode in Pr 1:2:3 are broader than those in Y 1:2:3. This result suggests that the Pr substitution on Ba sites occurred even in a very small value of x. In x(yy) geometry the relative intensity of the Ba and O(4) modes in Nd 1:2:3 is greater than those in Pr 1:2:3. The difference between Nd 1:2:3 and Pr 1:2:3 in the relative intensity of the Ba and O(4) modes may be produced by the chains.  相似文献   

9.
A detailed study of the superconducting state parameters (SSP) viz. electron–phonon coupling strength λ, Coulomb pseudopotential μ*, transition temperature TC, isotope effect exponent and effective interaction strength NOV of ten alkali–alkali binary alloys i.e. Li1−xNax, Li1−xKx, Li1−xRbx, Li1−xCsx, Na1−xKx, Na1−xRbx, Na1−xCsx, K1−xRbx, K1−xCsx and Rb1−xCsx are made within the framework of the model potential formalism and employing the pseudo-alloy-atom (PAA) model for the first time. We use the Ashcroft’s empty core (EMC) model potential for evaluating the superconducting properties of alkali alloys. Five different forms of local field correction functions viz. Hartree (H), Taylor (T), Ichimaru–Utsumi (IU), Farid et al. (F) and Sarkar et al. (S) are used to incorporate the exchange and correlation effects. A considerable influence of various exchange and correlation functions on λ and μ* is found from the present study. Reasonable agreement with the theoretical values of the SSP of pure components is found (corresponding to the concentration x = 0 or 1). It is also concluded that nature of the SSP strongly depends on the value of the atomic volume Ω0 of alkali–alkali binary alloys.  相似文献   

10.
The LaGa1−xyCoxMgyO3−δ solid solutions with rhombohedrally-distorted perovskite structure were ascertained to form in the concentration range of 0≤y≤0.10 at x=0.60 and 0≤y≤0.20 at x=0.35–0.40. Increasing cobalt content results in increasing electrical conductivity and thermal expansion of the perovskites. Thermal expansion coefficients of the LaGa1−xyCoxMgyO3−δ ceramics were calculated from the dilatometric data to vary in the range of 12.4–19.8×10−6 K−1 at 300–1100 K. Doping La(Ga,Co)O3−δ solid solutions with magnesium leads to increasing oxygen nonstoichiometry, electronic and oxygen ionic conductivity. Oxygen permeation fluxes through LaGa1−xyCoxMgyO3−δ membranes were found to be limited by the bulk ionic conduction and to increase with magnesium concentration, being essentially independent of cobalt content.  相似文献   

11.
Powder X-ray diffraction (XRD) analysis showed that the single phase perovskite-type structure of Ba1−xLaxCe0.90−xY0.10+xO3− (0 x 0.40, =0.05) could be maintained in a wide region of doping level by simultaneous partial substitution of La3+ for Ba2+-site and Y3+ for Ce4+-site in BaCeO3. The conduction properties of these oxides were investigated using various electrochemical methods in the same concentration of oxygen vacancy (=0.05). At high oxygen partial pressure, these oxides exhibited a mixed oxide ionic and p-type electronic conduction while at low oxygen partial pressure their conduction was almost protonic. Among these oxides, BaCe0.90Y0.10O3− exhibited the highest conductivities with a value of 1.24×10−1 S/cm in dry oxygen, and 5.65×10−2 S/cm in wet hydrogen at 1000°C. Both of the proton and oxide ion conductivities under oxygen and under hydrogen atmospheres decreased monotonically with the increasing substitution for Ba2+- and Ce4+-sites. The decreases in ion conductivities appear to relate to the decreased free volume (Vf) of crystal lattice as well as the increased distortion of lattice from ideal cubic perovskite structure.  相似文献   

12.
Cation deficient spinels NixMn3−x3δ/4O4+δ (0≤x≤1) have been prepared by thermal decomposition of mixed oxalates Nix/3Mn(3−x)/3(C2O4nH2O in air at 623 K. They have been characterised by temperature programmed reduction (TPR) under H2, the reaction being followed by gravimetric and powder X-ray diffraction measurements. It has been shown that TPR proceeds in several steps. The first steps correspond to the loss of nonstoichiometric oxygen leading to the formation of a stoichiometric oxide. During the following stages the manganese cations are reduced, causing the spinel structure to be destroyed, and the formation of solid solution of NiO in a cubic MnO. Subsequently, Ni2+ cations undergo a reduction to metallic nickel, and, finally, a mixture of nonstoichiometric MnO1−δ and metallic nickel is formed. These oxides contain a high level of vacancies which vary with the nickel content with a maximum of δ≈1 near x=0.6. This nonstoichiometry is ascribed both to the presence of Ni3+ and excess of Mn4+.  相似文献   

13.
The electrical property of (La1−xSrx)1−z(Al1−yMgy)O3−δ (LSAM; x≤0.3, y≤0.15 and z≤0.1) was measured using the DC four-probe method as a function of temperature (500–1000°C) and oxygen partial pressure (1–10−22 atm). Among LSAMs, (La0.9Sr0.1)AlO3−δ showed the highest ionic conductivity, σi=1.3×10−2 S cm−1 at 900°C. A simultaneous substitution at A and B sites or A site deficiency is expected to create larger oxygen vacancy and higher ionic conductivity. However, it showed a negative effect. The effect of the vacancy increase did not effect monotonously the ionic conductivity. It was found that the concentration of oxygen vacancy, [VO], influences not only the oxide ion conductivity, σi, but also the mobility, μv, of [VO]. These properties exhibit a maximum at around [VO]=0.05. With the increase in [VO], the activation energy, Ea, of the ionic conduction dropped from 1.8 to ca. 1.0 eV at [VO]=0.05 and became almost constant at [VO]>0.05. The dependency of the pre-exponential term, μ0v, and Ea on [VO] was analyzed and their effect on μv and σi was discussed with respect to crystal structure and defect association. It was estimated that the crystal structure mainly governs these properties. The effect of defect association could not be ignored but is considered to be a complicated correlation.  相似文献   

14.
In this paper we report studies on a range of niobate based tungsten bronzes, with a view to analysing their potential as anode materials in SOFCs. Six systems were studied, (Sr1−xBax)0.6Ti0.2Nb0.8O3, Sr0.6−xLaxTi0.2+xNb0.8−xO3, (Sr0.4−xBax)Na0.2NbO3, (Ba1−xCax)0.6Ti0.2Nb0.8O3, Ba0.5−xAxNbO3 (A=Ca, Sr), and Ba0.3NbO2.8, and the electrical conductivities were examined over a range of oxygen partial pressures (10−20–1 bar). All the systems showed good conductivity in low oxygen partial pressures, with values as high as 8 S cm−1 at 930°C (P(O2)=10−20 bar). As the oxygen partial pressure was raised the conductivity dropped showing in most cases an approximate [P(O2)]−1/4 dependence and good re-oxidation kinetics. Of all the samples studied the (Sr1−xBax)0.6Ti0.2Nb0.8O3 and (Ba1−xCax)0.6Ti0.2Nb0.8O3 systems appear most promising for potential use as anode materials in SOFCs.  相似文献   

15.
The crystal structure and properties of La1 − xSrxCoO3 − y with strontium contents ranging from x = 0.1 to x = 0.7 have been studied. The lattice parameters were measured as a function of temperature (4.2–400 K) and the crystal structure was found to change from rhombohedral (at low temperatures and values of x) to cubic. While LaCoO3 is paramagnetic the oxides in the composition range 0.2 < x < 0.6 are soft ferromagnets. The strontium additions are compensated by the formation of Co4+ (cobalt ions with one positive effective charge, CoCo.) and oxygen vacancies (Vo..). From the results it is concluded that the relative importance of oxygen vacancies increases with increasing temperature and decreasing oxygen activity. As a result the concentration of electronic charge carriers — and the resultant electrical conductivity — decrease with increasing temperature. The defect structure is discussed and it is concluded that defect associations — probably between oxygen vacancies and strontium ions — and formation of microdomains of perovskite-related phases are important aspects of the overall structure of these perovskite phases.  相似文献   

16.
Ag+/Na+ ion-exchanged aluminosilicate glasses with uniform concentration profiles were prepared, and their electrical conductivities were investigated as functions of the ion-exchange ratio and the initial glass compositions. In the case of the ion-exchanged glasses of x20Ag2O–(1−x)20Na2O–10Al2O3–70SiO2 in mol%, the conductivity, σ, and its activation energy, Eσ, showed a minimum and a maximum at the same ion-exchange ratio x=0.3, respectively, and the mixed mobile ion effect (MMIE) was observed. The fully ion-exchanged sample attained σ=3.5×10−5 S/cm at 200 °C, which was 1.5 orders of magnitude larger than that of initial glass. In the case of x25Ag2O–(1−x)25Na2O–25Al2O3–50SiO2, the mixed mobile ion effect was also observed at x=0.5. The maximum conductivity of 2×10−4 S/cm at 200 °C was obtained in the fully ion-exchanged glass sample.

The electric relaxation analysis was also conducted on both systems, and Kohlrausch–Williams–Watts (KWW) fractional exponent β was obtained as a function of x. The decrease of β was observed near x≈0.3 in the former system, while that of the later system was independent of the ion-exchange ratio. Based on the structural analysis results, the observed behaviors were investigated from the point of view of the occupation of Ag+ ions on the non-bridging oxygen-site (NBO-site) and the charge compensation-site (CC-site) of AlO4 tetrahedral unit.  相似文献   


17.
A series of substituted lead iron niobate compounds with the general formula Pb2+(1−x)AZx(Fe{(1−(2−Z)x)/2}Nb{(1+(2−Z)x)/2})O3 (0<x<0.6 and A=La3+, K+ or Sr2+) were prepared by a modified solid-state synthesis. The relative concentrations of Fe3+ and Nb5+ were adjusted to compensate the charge imbalance due to the aliovalent substitution. The dielectric constant and magnetic susceptibilities were studied as a function of temperature. The temperature of the dielectric maximum, TM, of the substituted compounds decreased linearly with increasing concentration of the substituent ions. The magnetic measurements showed an antiferromagnetic transition at temperatures TN1 due to the superexchange interactions mediated by Fe–O–Fe and an additional antiferromagnetic-type transition at TN2. TN1 linearly increased with the increasing concentration of Fe3+ ion at the B-site of ABO3-type substituted compounds. TM is shown to be directly dependent on the concentration of the ferroactive Nb5+ ions at the B-site and Pb2+ ions at the A-site.  相似文献   

18.
A Bi2V1 − xyUxBiyO5.5 + 0.5xy solid solution derived from Bi4V2O11 has been prepared and characterized with x up to 0.125 for y = 0. Partial substitution of U6+ for V5+ in Bi4V2O11 leads to the stabilization at room temperature of the high-oxide ion conducting γ-phase, in contrast with other M6+ dopants which stabilize the β-phase. The lower conductivity in U substituted system compared with BICUVOX.10 is attributed to its higher activation energy. Conductivity values and activation energies of the U substituted phases compare well with Bi2UO6.  相似文献   

19.
The equilibrium oxygen content as a function of the temperature and oxygen pressure was measured for the solid solution YBa2Cu3−xCoxO6+δ, where x=0, 0.2, 0.4, 0.6, 0.8, by using coulometric titration in the temperature range 600–850°C and oxygen pressures between 10−5 and 1.0 atm. The change in the partial molar enthalpy and entropy of the intercalated oxygen was determined at different oxygen and cobalt contents. The oxygen chemical diffusion was studied by thermogravimetric relaxation in the oxygen-controlled atmosphere. The thermodynamic data were employed to determine how the chemical diffusion coefficient, the thermodynamic factor and the random-diffusion coefficient depend on oxygen content in specimens with different cobalt concentration. The oxygen intercalation thermodynamics and diffusivity results provide evidence of ordering phenomena on a microscopic scale in the basal plane of the tetragonal solid solution YBa2Cu3−xCoxO6+δ. A model for the oxygen diffusion is suggested to explain the large difference between the random and tracer diffusion coefficients in YBa2Cu3O6+δ  相似文献   

20.
Strained Si1−xGex/Si quantum wells have been doped with erbium by implantation. A comparison is made with strained Si1−xGex/Si quantum wells and relaxed Si1−xGex, with x between 10% and 25%, doped with erbium during MBE growth. The erbium concentration was between 1×1018 and 5×1018 cm−3 throughout the active regions. Transmission electron microscopy, X-ray diffraction, and photoluminescence studies indicate that good regrowth can been achieved after full amorphisation by implantation of the strained quantum wells. The erbium luminescence is more intense in the Si1−xGex/Si layers, but erbium-implanted samples containing Si1−xGex exhibit defect luminescence in the region of 0.9–1.0 eV. These defects are also present when Si1−xGex/Si quantum wells are implanted with an amorphising dose of silicon, and then regrown. They are attributed to small germanium-rich platelets, rather than to erbium-related defects. Electroluminescence is presented from a forward biased erbium-implanted Si0.87Ge0.13/Si structure at a drive current density of only 1.8 mA/cm2.  相似文献   

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