共查询到19条相似文献,搜索用时 203 毫秒
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唐海林 《太赫兹科学与电子信息学报》2013,11(6):847-852
太赫兹肖特基二极管是太赫兹应用领域中非常重要的一种器件,它可以实现高频信号的混频和倍频,研制发展太赫兹肖特基二极管对于太赫兹技术有重要意义。本文首先介绍了太赫兹肖特基二极管的种类及性能表征,接着介绍国内外主要研究机构在太赫兹肖特基二极管方面的研制成果和进展,最后总结出研制太赫兹肖特基二极管的关键技术和发展方向。 相似文献
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为研究制作THz频段下工作的肖特基二极管器件,系统研究了平面肖特基二极管的制作工艺。通过分子束外延(MBE)生长了掺杂浓度分别为5×1018 cm-3的缓冲层和2×1017 cm-3的外延层,并研究温度对厚度的影响,使得膜层厚度控制良好,晶格完整。通过参数控制,减小了等离子体增强化学气相沉积(PECVD)的SiO2钝化层应力,使压指结构的翘曲情况得以改善。研究了不同退火温度下欧姆接触的情况,使接触电阻率减小到0.8×10-7 ?/cm2。用电子束光刻和干法刻蚀制作了亚微米级的阳极区域,结合GaAs湿法刻蚀的速率控制,完成了表面沟道的制作,制作出完整的平面肖特基二极管。通过I-U曲线理论计算,二极管的截止频率达到太赫兹量级,为后续工作奠定了基础。 相似文献
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根据太赫兹平面肖特基二极管物理结构,在理想二极管SPICE参数模型的基础上建立了二极管小信号等效电路模型。依据该二极管等效电路模型设计了基于共面波导(CPW)去嵌方法的二极管S参数在片测试结构,并对其在0.1~50 GHz、75~110 GHz频率范围内进行了高频小信号测试,利用测试结果提取了高频下二极管电路模型中各部分电容、电阻以及电感参数。将相应的高频下电容与电阻参数分别与低频经验公式电容值和直流I-V测试提取的电阻值进行了对比,并利用仿真手段对高频参数模型进行了验证。完整的参数模型以及测试手段相较于理想二极管SPICE模型和传统的参数提取方法可以更为准确地表征器件在高频下的工作状态。该建模思路可用于太赫兹频段非线性电路的优化设计。 相似文献
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固态倍频器是太赫兹源应用中的关键器件,如何利用非线性器件提高太赫兹倍频器件的效率是设计太赫兹固态电路的关键。本文介绍了利用肖特基二极管非线性特性设计固态太赫兹二倍频器的2种方法,即采用直接阻抗匹配和传输模式匹配设计了2种不同拓扑结构的170 GHz二倍频器,针对设计的结构模型,分别进行三维有限元电磁仿真和非线性谐波平衡仿真。仿真结果表明,在17 dBm输入功率的驱动下,倍频器在160 GHz~180 GHz输出频率范围内,倍频效率在15%左右,输出功率大于7 mW。最后对2种方法设计的倍频器结构进行了简单对比和分析,为今后太赫兹倍频研究和设计提供仿真方法。 相似文献
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基于GaN横向肖特基势垒二极管(SBD)的频率特性和应用的需要,设计了一种基于AlGaN/GaN异质结的横向SBD.利用Silvaco Atlas软件研究了 AlGaN势垒层的厚度和Al摩尔组分对异质结AlχGaN1-χ/GaN SBD电学性能的影响.仿真结果表明,SBD器件截止频率随Al摩尔组分的增加先增大再减小,当AlχGaN,1-χ层中Al摩尔组分为0.2~0.25,其厚度为20~30nm时,AlGaN/GaN SBD器件的频率特性最好.在仿真的基础上,设计制作出了肖特基接触直径为2 μm的非凹槽和凹槽型AlGaN/GaN横向空气桥SBD.通过直流I-V[测试和射频S参数测试,提取了两种SBD器件的理想因子、串联电阻、结电容、截止频率和品质因子等关键参数,该平面 SBD可应用于片上集成和混合集成的太赫兹电路的设计与制造. 相似文献
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肖特基势垒二极管(SBD)具有强非线性效应、速度快及容易系统集成等特点,常用于微波、毫米波及太赫兹波的产生和检测。本文通过电子束光刻等技术制作出肖特基接触直径1 μm的二极管,并对二极管进行了直流测试和射频测试。经过直流测试,二极管的串联电阻为10.2 Ω,零偏结电容为1.76 fF,肖特基结截止频率达到了8.7 THz;相同管子的射频测试串联电阻为15.4 Ω,零偏结电容1.46 fF,肖特基结截止频率也达到了7 THz。 相似文献
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Tao Wu 《Journal of Infrared, Millimeter and Terahertz Waves》2008,29(7):634-640
A diamond mixed tunneling and avalanche transit-time diode is designed in this letter. Schottky contact is used in this kind of diode to reduce the contact resistance. Electrical characteristics of n-type diamond Schottky contact have been accurately investigated. Total output power of such transit-time diode is evaluated using an accurate large-signal model. The results indicate that the new type transit-time diode can operate with the frequency up to several terahertzes. The output power density is more than 1.185 MW/cm2 from 1.07 to 2.12THz. About 17% improvement in efficiency is found at 2.12THz. 相似文献
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KOU Wei LIANG Shixiong ZHOU Hongji DONG Yazhou GONG Sen YANG Ziqiang ZENG Hongxin 《电子学报:英文版》2022,(3):467-487
The special position of terahertz wave in the electromagnetic spectrum makes it possess the characteristics of orientation, broadband, penetration and low energy, which promotes the extensive research of terahertz wave in the fields of communication, radar, imaging,sensing, security inspection and so on. The solid-state terahertz sources based on semiconductor devices have attracted extensive attention in the field of terahertz information technology due to their characteristics such as being ab... 相似文献
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Pfeiffer U.R. Mishra C. Rassel R.M. Pinkett S. Reynolds S.K. 《Microwave Theory and Techniques》2008,56(2):364-371
This paper presents Schottky barrier diode circuits fully integrated in a 0.13- mum SiGe BiCMOS process technology. A subharmonically pumped upconverter and a frequency doubler are demonstrated that operate beyond 100 GHz without the need of external components. The upconverter has a size of 430 times 780 mum2 including on-chip matching elements and bond pads. It has a conversion gain of - 6 to - 7 dB from 100 to 120 GHz. The upconverter achieves a high single-sideband saturated output power of - 4 dBm from 100 to 120 GHz and a high linearity with a 1-dB compression point of - 6 dBm. The frequency doubler has a size of 360 times 500 mum2 and can deliver up to 2.5 dBm at 110 GHz. 相似文献
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本文提出了一种宽带双极化金属锥阵列天线。该阵列天线以传统的旋转体天线结构为主体,通过在锥体底部开设四道正交的直通槽,以便在锥状单元内部形成可与地板间构成匹配谐振腔的开放式空腔结构。在阵列中,任意两个相邻的锥状单元之间可形成类似于Vivaldi天线的辐射缝隙结构。馈电采用同轴馈电方式,探针无弯折结构,金属锥体无弯折过孔。每个金属锥状单元独立,可极大简化加工、装配和维护过程。该天线具有两个正交极化,分别由左右和前后相邻单元构成。仿真结果表明,在频率范围为2~8GHz内,阵列大部分有源VSWR小于2,小部分端口有源VSWR小于2.5 (相对带宽为120%)。 相似文献
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Haonan Zheng Runjiang Shen Huikai Zhong Yanghua Lu Xutao Yu Shisheng Lin 《Advanced functional materials》2021,31(40):2105325
In situ energy supply method has a high demand for the various distributed devices in the fast-developing Internet of Things. Harvesting energy from the environment that converts mechanical energy into electricity has emerged as a promising candidate for in situ energy network. However, although hardly achieved, electricity is much more desired under low temperature environments, such as the north pole or on Mars. Here, it is reported that the dynamic Schottky diode can work well under a low temperature of 77 K, while the electricity output can be greatly increased compared with that at room temperature. The voltage and current output can be increased to 1.21 V and 11.38 µA compared to 0.76 V and 4.86 µA at room temperature, the higher carrier mobility at a lower temperature is responsible for this improvement. This research passes the way for power generation in some extreme cold areas, which can further promote the practical application of dynamic diode generators. 相似文献
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F. Yang H. F. Meng W. B. Duo Z. L. Sun 《Journal of Infrared, Millimeter and Terahertz Waves》2017,38(5):630-637
Sub-harmonic mixers are the core element of terahertz room temperature, high spectral resolution heterodyne receivers for planetary science, and remote sensing. Here, terahertz sub-harmonic mixer up to 400 GHz using discrete Schottky diode is presented. Measured performance is in agreement with results from the linear and nonlinear co-simulations, and this methodology shows its practicability for the discrete planar GaAs Schottky diode-based terahertz core circuit design. 相似文献