Numerical Study of HBr/He Discharges in Capacitive Coupled Plasma Reactor

Br-based plasmas potentially provide selective etching of Si. The characteristics of homogenous discharge in mixed gases of HBr and He are investigated numerically based on a self-consistent 2D fluid model. The model takes into account the primary processes like excitation and ionization. The reactions of radicals with radicals, neutrals with neutrals and radicals and neutrals are taken into account in HBr/He discharge and therefore can adequately represent discharge plasma. Based on simulation results of the self-consistent 2D fluid model, the dominant species for Si etching in HBr/He plasma discharge are Br, Br⁺, H and HBr⁺. The impact of frequency, voltage, electrode gap, and gas mixture ratio on the densities of these important species in HBr/He has been explored. Simulation results indicate that elevating high frequency electrode’s frequency and voltage, enhances etching species densities. Increasing the electrode gap, the densities of all plasma species decrease and vice versa. The addition of He to HBr plasma decreases Br and HBr⁺ densities while increases Br⁺ density. Densities of active species for Si etching and subsequently chemical etching versus physical sputtering in HBr/He plasma can be controlled by tuning input parameters and the desired etching can be achieved.     

Reactions of HBr+ ions in the 2Π i , v + quantum states with H2 and HBr molecules

The mechanisms and kinetics of low-temperature ion-molecular reactions between the Br⁺, HBr⁺, and DBr⁺ions and the HBr, DBr, H₂, and D₂ molecules were studied. The HBr⁺ (i,v ⁺) and DBr⁺(i,v ⁺) ions were prepared in separate spin-orbit (i) and vibrational (v ⁺) states by resonance multiphoton ionization in a free flow of halogen halides (HBr and/or DBr) with hydrogen, deuterium, or inert gases (Ar, He). The effectiveness of various reaction channels, including the exchange of charges, H and D atoms, and H⁺andD⁺ ions, was studied. The quantitative data on the kinetics of these reactions were obtained for separate quantum states of the ions. The resonance ionization of one of the two ion isotopomers H⁷⁹Br⁺(D⁷⁹Br⁺) or H⁸¹Br⁺(D⁸¹Br⁺) was used to study and compare the effectiveness of various ion-molecular reaction channels.     

Further studies on the dissociation of HBr behind shock waves

Previously reported shock tube studies of the dissociation of HBr in the temperature range of 2100–4200°K have been extended to lower temperatures (1450–2300°K) in pure HBr. The course of reaction was followed by monitoring the radiative recombination emission in the visible spectrum from Br atoms. The results imply that, in the lower range of temperatures, the activation energy of dissociation, E in the expression AT^?2e^?E/RT, can be approximated by the HBr bond energy (88 kcal/mole). It was also found that, in this temperature range, the rate of HBr dissociation is sensitive to the Br₂ dissociation rate and the HBr + Br exchange rate. When these rates were adjusted to bring computed reaction profiles into agreement with experimental ones, it was found that the higher-temperature data could also be fitted reasonably well with an HBr dissociation activation energy of 88 kcal/mole, contrary to the conclusions of our previous work, which favored an activation energy of 50 kcal/mole. The “best value” for k₁^Ar, the rate coefficient for HBr dissociation in the presence of Ar as chaperone, appears to be 10^{21.78 ± 0.3} T^?2 10^?88/θ cc/mole sec, where θ = 2.3 RT/1000; that for k₁^HBr, is 10^22.66T^?210^?88/θ. A detailed review is given of the rate coefficients for the other pertinent reactions in the H₂–Br₂ system, viz., Br₂ dissociation and reactions of HBr with H and Br.     

HeIα photoionisation cross-section determination of Br atoms

An extended electron modulation spectroscopy method is described which allows the accurate determination of photoionisation cross sections of transient species relative to those of precursor compounds. In this paper cross section at 584 Å for atomic and molecular bromine transitions from neutral ground to lowest ionic states have been measured relative to that of the HBr⁺ (X²Π_1/2,3/2)←HBr(X¹Σ⁺) ionisation. Using the cross section of this HBr transition as an absolute standard and with relative cross-section data for ionisations leading to the accessible excited ionic states of Br⁺ and Br⁺₂, absolute total angle-integrated cross sections for the valence shell ionisation process in Br⁺ and Br⁺₂ are presented.     

Penning ionization and photoionization electron spectrometry of hydrogen bromide

An electron spectrometric study has been performed on HBr using metastable helium and neon atoms as well as helium resonance photons. High resolution electron spectra were obtained for a mixed He(2¹ S, 2³ S) beam, a pure He(2³ S) beam, a mixed Ne(3s ³ P ₂,³ P ₀) beam, and for HeI VUV light. From the comparison of vibrational populations of HBr⁺ (X, v′) and HBr⁺ (A, v′), formed by either He^* and Ne^* Penning ionization (PI) or HeI photoionization, we conclude that HBr⁺ (X) formation by PI exhibits only little perturbation of HBr potentials, whereas HBr⁺ (A) formation by PI exhibits substantial bond stretching of HBr due to metastable atom attack preferably from the H end. For He(2¹ S) + HBr theX- andA-state vibrational peak shapes are substantially broader than for the He(2³ S) + HBr case pointing to an additional, charge exchanged interaction (He⁺ + HBr^?) in the entrance channel of the former system which is also responsible for a broad feature found at lower electron energies in the He(2¹ S, 2³ S) induced PI electron spectra. For the first time, we have detected the low energy electrons in both the He(2¹ S) + HBr and He(2³ S) + HBr spectra, associated with the major mechanism for the formation of Br⁺ ions: energy transfer to repulsive HBr** Rydberg states, dissociating to H(1s) and autoionizing Br** atoms. The HBr⁺ (X)² II _3/2:² II _1/2 fine structure branching ratios vary significantly with the ionizing agent in a similar way as for the isoelectronic, atomic target case krypton.     

Investigation of the afterglow time regime in pulsed radiofrequency glow discharge time‐of‐flight mass spectrometry

The pulsed power operation mode of a radiofrequency (rf) glow discharge time‐of‐flight mass spectrometer was investigated, for several ions, in terms of intensity profiles along each pulse period. Particular attention was paid to the plateau and transient afterglow regions. An rf pulse period of 4 ms and a duty cycle of 50% was selected to evaluate the influence of discharge parameters in the afterglow delay and shape of Ar⁺, Ar₂⁺ and several analytes (Br, Cl, Cu) contained in polymeric layers. Pulse shapes of Ar⁺ and Ar₂⁺ ions vary with pressure and power. At low pressures the highest intensity is observed in the plateau while at higher pressures (>600 Pa) the afterpeak is the dominant region. Although the influence of the applied power is less noticeable, a widening of the afterglow time regime occurs for Ar⁺ when increasing the power. Maximum intensity of the argon signal is measured in the afterglow at 30 W, while the area of such afterpeak increases with power. The maximum intensity of Ar₂⁺ is obtained at the highest power employed (60 W) and the ratio maximum intensity/afterglow area remains approximately constant with power. Analytes with ionization potentials below (Cu) or just above (Br) the argon metastable energy show maxima intensities after argon ions decay, indicating they could be ionized by collisions with metastable Ar atoms. Chlorine signals are observed in the afterglow despite their ionization potential is well above the energy of argon metastable levels. Moreover, they follow a similar pattern to that observed for Ar₂⁺, indicating that charge‐transfer process with Ar₂⁺ could play a significant role. Copyright © 2011 John Wiley & Sons, Ltd.     

The behaviour of some α,α′-dibromoketones on electron impact. An analogy to the reductive removal of bromine in solution

The relative importance of the rearrangement ions [M ? Br ? CO]⁺, [M ? Br₂ ? CO]⁺ and [M ? HBr₂ ? CO]⁺ in the mass spectra of the title compounds is compared with the amounts of α-methoxyketone formed on reduction of these compounds with a Zn/Cu couple in methanol. It is suggested that the quantitative correlation found reflects the electron releasing powers of the substituents on the α carbons.     

Hybrid Monte Carlo — Fluid model for studying the effects of nitrogen addition to argon glow discharges

A computer model is developed for describing argon/nitrogen glow discharges. The species taken into account in the model include electrons, Ar atoms in the ground state and in the 4s metastable levels, N₂ molecules in the ground state and in six different electronically excited levels, N atoms, Ar⁺ ions, N⁺, N₂⁺, N₃⁺ and N₄⁺ ions. The fast electrons are simulated with a Monte Carlo model, whereas all other species are treated in a fluid model. 74 different chemical reactions are considered in the model. The calculation results include the densities of all the different plasma species, as well as information on their production and loss processes. The effect of different N₂ additions, in the range between 0.1 and 10%, is investigated.     

Dissociation of polyatomic ions in the inductively coupled plasma

A general method for identifying the origin of a particular polyatomic ion is described. Based on a postulated dissociation reaction, measured ion signal ratios (e.g. Ar₂⁺/Ar⁺) are combined with mass bias corrections and estimates of the density of the neutral product (usually Ar, O or H atoms) to determine a gas kinetic temperature T_gas. The temperature can also be measured by the reduction in pressure when the ICP is sampled (compared to room temperature argon), or by other means. Dissociation energies and spectroscopic constants for the ions are necessary. For the particular instrument used, some of the findings of this study are: (a) ArO⁺ and ArN⁺ can be either dissociated (if the plasma potential is high) or created (if the plasma potential is low) by collisions between the sampler and skimmer; (b) the strongly-bound oxide ions O₂⁺ and MO⁺ for the rare earths are observed at levels consistent with T_gas ∼5300 K in a ‘hot’ plasma, but ClO⁺ is formed in excess; and (c) the abundances of most other polyatomic ions like H₂O⁺ and ArH⁺ correspond to higher densities than would be expected in the ICP itself.     

Effects of oxygen addition to argon glow discharges: A hybrid Monte Carlo-fluid modeling investigation

A hybrid model is developed for describing the effects of oxygen addition to argon glow discharges. The species taken into account in the model include Ar atoms in the ground state and the metastable level, O₂ gas molecules in the ground state and two metastable levels, O atoms in the ground state and one metastable level, O₃ molecules, Ar⁺, O⁺, O₂⁺ and O^? ions, as well as the electrons. The hybrid model consists of a Monte Carlo model for electrons and fluid models for the other plasma species. In total, 87 different reactions between the various plasma species are taken into account. Calculation results include the species densities and the importance of their production and loss processes, as well as the dissociation degree of oxygen. The effect of different O₂ additions on these calculation results, as well as on the sputtering rates, is discussed.     

Application of Ab initio calculations to nuclear internal conversion: Repulsion energies of highly charged HBr ions

Ab initio MO calculations were applied to the evaluation of repulsion energies in highly charged HBr ions. Net charges of H and Br atoms were obtained from the Mulliken atomic population, and repulsion energies were estimated by a simplified model based on the Coulomb repulsion. The repulsion energy of HBr⁸⁺ was calculated to be 71.5 eV.     

A Comparative Study of HBr-Ar and HBr-Cl<Subscript>2</Subscript> Plasma Chemistries for Dry Etch Applications

The effects of HBr/Ar and HBr/Cl₂ mixing ratios in the ranges of 0–100% Ar or Cl₂ on plasma parameters, densities of active species influencing the dry etch mechanisms were analyzed at fixed total gas flow rate of 40 sccm, total gas pressure of 6 mTorr, input power of 700 W and bias power of 300 W. The investigation combined plasma diagnostics by Langmuir probes and the 0-dimensional plasma modeling. It was found that the dilution of HBr by Ar results in maximum effect on the ion energy flux with expected impact on the etch rate in the ion-flux-limited etch regime, while the addition of Cl₂ influences mainly the relative fluxes of Br and Cl atoms on the etched surface with expected impact on the etch rate in the reaction-rate-limited etch regime.     

Thermal energy charge transfer reactions of Ar+ ions with HBr and DBr molecules

HBr⁺ (A²Σ⁺-X²Π_i) and DBr⁺ (A²Σ⁺-X²Π_i) emissions are found up to v′=1 and v^′=2, respectively, from the thermal energy charge transfer reactions of Ar⁺ with HBr and DBr molecules in a flowing afterglow apparatus. Both A-state vibrational distributions have a peak at the lowest vibrational level, which are inconsistent with those expected from the energy resonance and/or Franck-Condon factors for ionization. This discrepancy is explained in terms of the distortion of target molecules by approach of reactant ions. Both A-state rotational distributions show that energies partitioned into rotation decrease with increasing vibrational levels, whereas the internal energy is nearly constant for all vibrational levels. The vibrational and rotational distributions obtained suggest that the reaction occurs at a relatively short distance and the product has a broad translational energy distribution.     

Etching Characteristics and Mechanisms of TiO<Subscript>2</Subscript> Thin Films in CF<Subscript>4</Subscript> + Ar,Cl<Subscript>2</Subscript> + Ar and HBr + Ar Inductively Coupled Plasmas

The comparative study of etching characteristics and mechanisms for TiO₂ thin films in CF₄ + Ar, Cl₂ + Ar and HBr + Ar inductively coupled plasmas was carried out. The etching rates for TiO₂, Si and photoresist were measured as functions of gas mixing ratios at fixed gas pressure (10 mTorr), input power (800 W) and bias power (300 W). It was found that the maximum TiO₂ etching rate of ~130 nm/min correspond to pure CF₄ plasma while an increase in Ar fraction in a feed gas results in the monotonic non-linear decrease in the TiO₂ etching rates in all three gas mixtures. Plasma diagnostics by Langmuir probes and 0-dimensional (global) plasma modeling supplied the data on the densities of plasma actives specie as well as on particle and energy fluxes to the etched surface. It was concluded that, under the given set of experimental conditions, the TiO₂ etching kinetics in all gas systems correspond to the ion-assisted chemical reaction with a domination of the chemical etching pathway. It was found also that the differences in the absolute TiO₂ etching rates correlate with the energy thresholds for TiO₂ + F, Cl or Br reaction, and the reaction probabilities for F, Cl and Br atoms exhibit the different changes with the ion energy flux according to the volatility of corresponding etching products.     

Électrochimie dans le carbonate de propylène: II. Utilisation du système Ar+/Ar− des hydrocarbures aromatiques alternés comme référence de potentiel indépendante du solvant

The standard potentials of Ar⁺/Ar and Ar/Ar^? redox couples of some mono- and poly-nuclear aromatic hydrocarbons have been measured in propylene carbonate. It appears that: (a) the difference E⁰(Ar⁺/Ar)?E⁰(Ar/Ar^?) is constant in various solvents for a given hydrocarbon; (b) in a medium, the sum E⁰(Ar⁺/Ar)+E⁰(Ar/Ar^?) is independent of the hydrocarbon. These results confirm that the Ar⁺/Ar^? system can be used as a solvent-independent reference for potential comparisons.     

Etching Characteristics and Mechanisms of TiO2 Thin Films in HBr/Ar and Cl2/Ar Inductively-Coupled Plasmas

The TiO₂ etching characteristics and mechanisms in HBr/Ar and Cl₂/Ar inductively-coupled plasmas were investigated under fixed gas-mixing ratio and bias power conditions. It was found that in both systems, an increase in gas pressure from 4 to 10 mTorr results in a non-monotonic TiO₂ etching rate, while a variation of input power in the range 500–800 W causes a faster-than-linear acceleration of the etching process. Plasma diagnostics performed by Langmuir probes and zero-dimensional plasma modeling provided data on plasma parameters, steady-state densities, and fluxes of the active species on the etched surface. The model-based analysis of the etching mechanism showed that for the given set of processing parameters, the TiO₂ etch kinetics correspond to the transitional regime of ion-assisted chemical reaction in which a chemical-etch pathway dominates.     

Preferential sputtering observed in Auger electron spectroscopy sputter depth profiling of AlAs/GaAs superlattice using low‐energy ions

Auger electron spectroscopy (AES) sputter depth profiling of an ISO reference material of the GaAs/AlAs superlattice was investigated using low‐energy Ar⁺ ions. Although a high depth resolution of ～1.0 nm was obtained at the GaAs/AlAs interface under 100 eV Ar⁺ ion irradiation, deterioration of the depth resolution was observed at the AlAs/GaAs interface. The Auger peak profile revealed that the enrichment of Al due to preferential sputtering occurred during sputter etching of the AlAs layer only under 100 eV Ar⁺ ion irradiation. In addition, a significant difference in the etching rates between the AlAs and GaAs layers was observed for low‐energy ion irradiation. Deterioration of the depth resolution under 100 eV Ar⁺ ion irradiation is attributed to the preferential sputtering and the difference in the etching rate. The present results suggest that the effects induced by the preferential sputtering and the significant difference in the etching rate should be taken into account to optimize ion etching conditions using the GaAs/AlAs reference material under low‐energy ion irradiation. Copyright © 2005 John Wiley & Sons, Ltd.     

Reactivity of Diarylnitrenium Ions

Hydride abstraction from diarylamines with the trityl ion is explored in an attempt to generate a stable diarylnitrenium ion, Ar₂N⁺. Sequential H-atom abstraction reactions ensue. The first H-atom abstraction leads to intensely colored aminium radical cations, Ar₂NH^.+, some of which are quite stable. However, most undergo a second H-atom abstraction leading to ammonium ions, Ar₂NH₂⁺. In the absence of a ready source of H-atoms, a unique self-abstraction reaction occurs when Ar=Me₅C₆, leading to a novel iminium radical cation, Ar=N^.+Ar, which decays via a second self H-atom abstraction reaction to give a stable iminium ion, Ar=N⁺HAr. These products differ substantially from those derived via photochemically produced diarylnitrenium ions.     

Two-Temperature Chemical-Nonequilibrium Modelling of a High-Velocity Argon Plasma Flow in a Low-Power Arcjet Thruster

A numerical simulation has been performed of a high-velocity argon plasma arc flow in a low power arcjet including a finite-rate chemical kinetic model. Electrons, ions, molecular ions ( $ {\text{Ar}}_{2}^{ + } $ ), neutral atoms including the ground and excited argon atoms (Ar^*) are treated as separate species in the plasma mixture. The chemical reactions considered are excitation, de-excitation, ionization and recombination processes, in which reactions involving excited argon atoms (Ar^*) and molecular ions ( $ {\text{Ar}}_{2}^{ + } $ ) are taken into account. The relative importance of different production and loss processes in determining the densities of excited argon atoms and ions is calculated inside the constrictor and expansion portion of the nozzle. The roles of the excited argon atoms and molecular ions are investigated. It is found that excited argon atoms play an important role in the ionization of argon atoms in the core of plasma arc, while the molecular ions have a significant effect on the recombination process at the arc fringes inside the constrictor and in the arc attachment zone of the anode.