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研制的长波大面积HgCdTe光导红外探测器的面积为2.1×2.1mm~2,在80K时探测率D_p~*=1.86×10~(10)cmHz~(1/2)W~(-1),响应率R_p=386VW~(-1),长波限λ_(co)(50%)>18μm.还研制了带有低温聚光器组合件结构的新型探测器,D_p~*=7.3×10~(10)cmHz~(1/2)W~(-1),λ_(co)(50%)>16μm. 相似文献
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对三种不同工艺的HgCdTe长波器件(标准工艺、回熔处理、离子注入后退火)的I-V性能分别进行测试,并通过理论计算与实验数据拟合提取上述器件参数,分析暗电流机制及导致暗电流变化的原因。文章中使用的暗电流机制的模型由扩散电流、产生-复合电流、缺陷辅助隧道电流和直接隧道电流组成。从拟合得到的器件参数中可以发现回熔过程中产生了大量的缺陷,导致缺陷辅助隧道电流、产生复合电流显著增加,器件反偏电阻减小,I-V性能变差。与离子注入后退火器件的性能变化相比,推测导致器件回熔后性能下降的原因是ZnS钝化层受热不稳定。 相似文献
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本文介绍用HgCdTe(MCT)制备的先进的扫描型长波红外(LWIR)焦平面列阵(FPA)。该列阵包含一个与SiCMOS读出积分电路匹配的,由正面照射的平面型P型上为n型的同质结二极管组成的列阵,在65K下该列阵所测得的平均光谱截止波长为10.8μm,平均量子效率为87%,在65和78K温度下和无背景辐射条件下,焦平面列阵的峰值D分别超过9.3×10^11和2.6×10^11cm.Hz^1/2/W 相似文献
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通过变面积Si基HgCdTe器件变温I-V测试和暗电流特性拟合分析,研究了不同偏压下n-on-p型Si基HgCdTe光伏器件的暗电流成分与Si基HgCdTe材料少子扩散长度和少子寿命随温度的变化规律.在液氮温度下,随着反向偏压的增大器件的表面漏电流在暗电流中所占比重逐渐增加.在零偏压下,当温度低于200 K时材料的少子... 相似文献
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中波双色光伏型HgCdTe红外探测器模拟研究 总被引:1,自引:0,他引:1
基于二维数值模型,对光伏型中波(MW1/MW2)HgCdTe双色红外探测器作了模拟计算,器件采用n-p-p-p-n结构、同时工作模式.计算了双色器件光谱响应及量子效率,重点分析了两个波段间的信号串音问题,以及高组分势垒层的作用.模拟结果显示,MW1(中波1,波长较短)对MW2(中波2,波长较长)的串音是辐射透过MW1区在MW2区中吸收引起的,串音与光吸收比近似成正比,而载流子扩散效应可以忽略不计.高组分阻挡层对载流子扩散引起的串音有显著的抑制作用,如果没有势垒层,载流子扩散引起的串音十分明显,甚至成为串音的主导因素.对于60×60μm2探测单元MW1和MW2的结电容大约为1.75pF/pixel. 相似文献
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R. Sewell C. A. Musca J. M. Dell L. Faraone K. Józwikowski A. Rogalski 《Journal of Electronic Materials》2003,32(7):639-645
The steady-state lifetime of photogenerated minority carriers has been investigated in heterostructure HgCdTe devices fabricated
on molecular-beam epitaxy (MBE) grown material. A wider bandgap capping layer (Hg(1−x)Cd(x)Te, x = 0.44) was grown on a narrower bandgap absorbing layer (Hg(1−x)Cd(x)Te, x = 0.32, λco,80K = 4.57 μm) material in an uninterrupted MBE growth to create an abrupt heterointerface. Steady-state lifetime as a function
of temperature over the range 80–300 K was extracted from photoconductive responsivity at an optical wavelength corresponding
to the peak responsivity at that temperature. At 80 K, the photoconductors exhibit a specific detectivity of 4.5 × 1011 cm Hz−1/2W−1 (chopping frequency of 1 kHz). For each measurement temperature, the steady-state excess carrier lifetime determined experimentally
was compared to the theoretical bulk lifetime for material with x = 0.32 and effective n-type doping density of 3.7 × 1014 cm−3. Theoretical calculations of the Auger-1 lifetime based on expressions developed by Pratt et al. were not able to account
for the reduction in lifetime observed at temperatures above 180 K. Two approaches have been attempted to resolve this discrepancy:
A semiempirical expression for Auger lifetime attributed to Meyer et al. was used to fit to the data, with the Auger coefficient
γ as a fitting parameter. However, the resulting Auger coefficient found in this work is more than an order of magnitude higher
than that reported previously. Alternatively, the reduction in effective lifetime above 180 K may be understood as a “loss”
of carriers from the narrow bandgap absorbing layer that are promoted across the potential barrier in the conduction band
into a low lifetime, wider bandgap capping layer. The reduction in lifetime as a function of inverse temperature for temperatures
above 180 K may be fitted by a “cap lifetime” that has an activation energy equal to the change in bandgap across the heterostucture
and scaled by a fitting constant. 相似文献
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报道了HgCdTe p^ -on-o长波异质结焦平面器件的研究结果.采用由分子柬外延(MBE)和原位掺杂技术生长的P^ -on-n异质结材料,通过湿法腐蚀、台面钝化、台面金属化、铟柱制备和互连等工艺,得到了HgCdTe p^ -on-o长波异质结焦平面器件.根据,I-V实验结果和暗电流理论,拟合计算和分析了各种暗电流机制对器件性能的影响.且获得了器件的响应光谱和探测率。 相似文献
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M. Tanaka K. Ozaki H. Nishino H. Ebe Y. Miyamoto 《Journal of Electronic Materials》1998,27(6):579-582
We employed AgNO3 solutions for doping Ag in liquid phase epitaxy (LPE) grown Hg0.78Cd0.22Te epilayers and found that the minority carrier lifetimes became longer so that the diode properties improved. After annealing
LPE grown Hg(1-x)Cd(x)Te layers (x=0.22) in Hg atmosphere, the epilayers were immersed in an AgNO3 solution at room temperature. The typical carrier concentrations of holes was 3 × 1016 cm−3 at 77K. These values were almost the same as for the nondoped wafers. Also, its acceptor level was 3 to 4 meV. This shows
that the Ag was activated. The doped crystals have lifetimes several times longer than those of the nondoped crystals. Numerical
fitting showed the lifetime was limited mostly by the Auger 7 process. The Shockley-Read-Hall recombination process was not
effective. To examine the Ag-doped wafer, we fabricated photodiodes using standard planar technology. The diodes have an average
zero-bias resistance of several MΩ and a shunt resistance of about 1 GΩ for a 10 μm cutoff wavelength at 78K. These values
are about four times higher than those of nondoped diodes. The photo current is also two times higher at the same pixel size.
This shows that the quantum efficiency is increased. The extension of the lifetime contributes to the high resistance and
the high quantum efficiency of the photodiode. 相似文献
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采用傅立叶变换红外(FTIR)透射的方法测量了碲镉汞晶片在不同厚度下的透射曲线,运用经验公式确定了其组分及80K时的截止波长,并同实测的响应光谱得到的截止波长进行了比较,结果表明,采用该方法预测的截止波长同实际的截止波长相对偏差为2.5%,从而为碲镉汞器件制备工艺中材料的筛选、提高投片的准确率提供了重要的参考依据. 相似文献
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零偏压电阻-面积乘积(R0A)和反向饱和电流密度J0是决定光电二极管性能的重要参数.提出了一种对碲镉汞(Hg1-xCdxTe)光伏器件的少子扩散特性进行研究的有效方法.利用变磁场下的电流-电压(I-V)测试,得到了组分x在0.5与0.6之间的器件R0A和J0随磁场强度B变化的函数关系.由实验结果估算得到了室温工作的短波红外(SWIR)碲镉汞光伏器件的少子扩散长度.其数值与用激光诱导电流(LBIC)方法得到的相一致. 相似文献
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在测试中波碲镉汞光伏器件的瞬态响应时,当激光光斑照射器件表面位置距离光敏面较远时,器件表现为特殊的双峰脉冲响应现象,分析表明出现这种异常双脉冲现象的原因是光敏区内的少子漂移和光敏区外侧向收集的少子扩散有时间上的差异。通过对器件施加反向偏压,脉冲响应随反向偏压的增大由双峰变成单峰的实验结果,验证了少子侧向收集是导致器件形成双峰的主要原因。对第二个峰拟合得到p区的少数载流子寿命。将瞬态响应获得的少子寿命与该p型中波碲镉汞材料的理论计算和光电导衰退法得到的少子寿命相对比,发现三种方式得到的少子寿命随温度的变化趋势基本一致,这说明了可以通过瞬态光响应得到中波碲镉汞器件的少子寿命。 相似文献