Electro-optical properties of excitons in polydiacetylene chains

We show how to compute the optical functions (reflectivity, transmission, and absorption) of polydiacetylene chains diluted in their monomer matrix exposed to a uniform electric field in the chain direction, in the excitonic energy region. Adopting a model electron-hole potential, we derived an analytical expression for the effective chain susceptibility, which gives the optical functions. The resulting absorption shows excitonic peaks below the gap and Franz-Keldysh oscillations above the gap. The method has been applied for a 3BCMU polydiacetylene chain, showing a good agreement with experimental spectra. Received 5 November 1998 and Received in final form 23 February 1999     

The negatively charged exciton in double-layer quantum dots

The hyperangular equation for charged semiconductor complexes in a double-layer harmonic quantum dot was solved numerically by using the correlated hyperspherical harmonics as basis functions. By using this method, we have calculated the energy spectra of the low-lying states of a charged exciton as a function of the radius of the quantum dot and the binding energy spectra of the ground state as a function of the radius of the quantum dot for a few values of the distance between the vertically coupled dots and the electron-to-hole mass ratio. Received 3 December 1999     

Variational calculations of ionized-donor-bound excitons in GaAs-Al x Ga 1 - x As quantum wells

Using a two-parameter wave function, we calculate variationally the binding energy of an exciton bound to an ionized donor impurity (D^+,X) in GaAs-Al_xGa_1-xAs quantum wells for the values of the well width from 10 to 300 ?, when the dopant is located in the center of the well and at the edge of the well. The theoretical results confirm that the previous experimental speculation proposed by Reynolds et al. [Phys. Rev. B 40, 6210 (1989)] is the binding energy of D^+,X for the dopant at the edge of the well. In addition, we also calculate the center-of-mass wave function of the exciton and the average interparticle distances. The results are discussed in detail. Received 17 July 2000 and Received in final form 13 November 2000     

Carrier scattering by Auger mechanism in a single quantum wire

We report on time-resolved microphotoluminescence experiments in a single GaAs/GaAlAs V-shaped quantum wire as a function of optical excitation intensity. At low pump power we observe that excitons are localized in quantum boxes formed by the local potential minima existing along the wire axis. As the pump power is increased, state filling of the lowest lying levels of the boxes appears. When two carriers occupy the first excited level of the box, a very efficient Auger scattering occurs, leading to a transfer of carriers from one box to another neighbouring one. The intradot Auger scattering time has been measured and is of the same order of magnitude as the LA-phonon emission rate. Received 5 February 2001     

Influence of carrier correlations on the excitonic optical response including disorder and microcavity effects

A model study of the characteristic signatures of carrier-correlation effects on the excitonic differential absorption spectra in semiconductors is presented. Using an effectively one-dimensional tight-binding system Coulomb-induced carrier-correlations up to third-order in the optical field are treated without additional approximations. To illustrate the influence of the different many-body contributions excitonic differential absorption spectra are computed for various polarizations and pump-probe time delays. The simultaneous influence of energetic disorder and correlations on the differential absorption spectra is discussed. Also presented are numerical results for the case when the semiconductor system is placed inside a microcavity in the strong-coupling regime. It is shown that the correlations induce characteristic signatures in the normal mode spectra. Received 22 January 1999     

Photoreflectance characterization of InAs/GaAs self-assembled quantum dots grown by ALMBE

We report on a photoreflectance investigation in the 0.8-1.5 eV photon energy range and at temperatures from 80 to 300 K on stacked layers of InAs/GaAs self-assembled quantum dots (QDs) grown by Atomic-Layer Molecular Beam Epitaxy. We observed clear and well-resolved structures, which we attribute to the optical response of different QD families. The dependence of the ground state transition energy on the number of stacked QD layers is investigated and discussed considering vertical coupling between dots of the same column. It is shown that Coulomb interaction can account for the observed optical response of QD families with different morphology coexisting in the same sample. Received 17 November 1999     

Ab initio study of the Fe intra- and inter-layer magnetic order in Fe/Ir(001) superlattices

We reconsider the semiconductor trions from scratch. We first determine the very many “reasonable” ways to write the trions in first quantization. We then select the forms which are easy to relate to physical pictures. In a second part, we derive the corresponding creation operators in second quantization. We pay particular attention to the expression of the X^- trion in terms of exciton and free-electron, as it is the one adapted to future works on many-body effects with trions. Received 27 May 2002 / Received in final form 18 December 2002 Published online 20 June 2003 RID="a" ID="a"e-mail: combescot@gps.jussieu.fr     

Polaron effects on excitons in parabolic quantum wells: fractional-dimension variational approach

Polaron effects on excitons in parabolic quantum wells are studied theoretically by using a variational approach with the so-called fractional dimension model. The numerical results for the exciton binding energies and longitudinal-optical phonon contributions in GaAs/Al_0.3Ga_0.7As parabolic quantum well structures are obtained as functions of the well width. It is shown that the exciton binding energies are obviously reduced by the electron (hole)-phonon interaction and the polaron effects are un-negligible. The results demonstrate that the fractional-dimension variational theory is effectual in the investigations of excitonic polaron problems in parabolic quantum wells.     

Anomalous dephasing of bosonic excitons interacting with phonons in the vicinity of the Bose-Einstein condensation

The dephasing and relaxation kinetics of bosonic excitons interacting with a thermal bath of acoustic phonons is studied after coherent pulse excitation. The kinetics of the induced excitonic polarization is calculated within Markovian equations both for subcritical and supercritical excitation with respect to a Bose-Einstein condensation (BEC). For excited densities n below the critical density , an exponential polarization decay is obtained, which is characterized by a dephasing rate . This dephasing rate due to phonon scattering shows a pronounced exciton-density dependence in the vicinity of the phase transition. It is well described by the power law that can be understood by linearization of the equations around the equilibrium solution. Above the critical density we get a non-exponential relaxation to the final condensate value p⁰ with that holds for all densities. Furthermore we include the full self-consistent Hartree-Fock-Bogoliubov (HFB) terms due to the exciton-exciton interaction and the kinetics of the anomalous functions . The collision terms are analyzed and an approximation is used which is consistent with the existence of BEC. The inclusion of the coherent exciton-exciton interaction does not change the dephasing laws. The anomalous function F_k exhibits a clear threshold behaviour at the critical density. Received 13 December 1999     

Interaction-assisted propagation of Coulomb-correlated electron-hole pairs in disordered semiconductors

A two-band model of a disordered semiconductor is used to analyze dynamical interaction induced weakening of localization in a system that is accessible to experimental verification. The results show a dependence on the sign of the two-particle interaction and on the optical excitation energy of the Coulomb-correlated electron-hole pair. Received 4 September and Received in final form 26 November 1998     

Lateral carrier tunnelling in stacked In(Ga)As/GaAs quantum rings

Exciton recombination dynamics in vertical stacks of InGaAs quantum rings have been studied by means of continuous wave and time resolved photoluminescence under low excitation density conditions. We have paid special attention to the effect of the carrier coupling on the exciton radiative lifetime: weak (14 nm spacer sample), intermediate (4.5 nm spacer sample), where the size filtering effects (towards small rings) compensate partially that arising from carrier coupling (towards lower energies), and strong electron and hole coupling (1.5 nm spacer sample) between layers. Experimental decay times in the latter two cases have been compared to the times simulated with a multi-quantum well based model, which accounts for the observed change of carrier coupling regime. The most important effect is observed when the hole wave function overlap along the growth direction becomes important (1.5 nm spacer sample). This situation makes important the lateral tunneling of excitons between rings, given their large lateral size, which is characterized by times around 5 ns at the emission peak energy (rings with the most probable size of the distribution).     

Dichroism in angular resolved VUV-photoemission from the (0001) surfaces of thin Gd and Nd films epitaxially grown on W(110)

We present investigations of the electronic and magnetic structure of the Rare Earth valence states. In particular, we have examined ultra thin films of the rare earth metals gadolinium and neodymium epitaxially grown on tungsten (110). Various experiments on dichroism in angular resolved photoemission have been performed using circularly as well as linearly polarised light in the VUV-range with photon energies below 40 eV. A special emphasis was placed on the investigation of the surface state, which was observed for both Gd and Nd. A very small magnetic splitting of about 25 meV was observed for the surface state of ferromagnetic Gd. A magnetic ordering of a Nd-monolayer on a remanently magnetised Fe-film is observed. Large dichroism effects are found for the surface state as well as the valence bands of paramagnetic Nd. In the latter case, these are used to determine the dispersion of the valence bands. Different numerical approaches are presented, one based on atomic photoionisation theory, another is based on a one-step model of solid state photoemission. Atomic photoionisation theory is used together with three-step calculations to explain the non-magnetic circular dichroism observed in the Gd 4f emission. The capability of dichroism experiments for resolving details of the electronic structure and for sensitive tests of photoemission calculations is demonstrated. Received 21 September 1998     

Electron Raman scattering in cylindrical quantum wires

Electron Raman scattering (ERS) is investigated in a free-standing semiconductor quantum wire of cylindrical geometry for two classes of materials CdS and GaAs. The differential cross section (DCS) involved in this process is calculated as a function of a scattering frequency and the radius of the cylinder. Electron states are considered to be confined within a free-standing quantum wire (FSW). Single parabolic conduction and valence bands are assumed. The selection rules are studied. Singularities in the spectra are found and interpreted for various radii of the cylinder.     

Symmetry based properties of the transition metal dichalcogenide nanotubes

The full geometrical symmetry groups (the line groups) of the monolayered, 2Hb and 3R polytypes of the inorganic MoS₂ and WS₂ micro- and nanotubes of arbitrary chirality are found. This is used to find the coordinates of the representative atoms sufficient to determine completely the geometrical structure of the tubes. Then some physical properties which can be deduced from the symmetry are discussed: electron band degeneracies, selection rules, general forms of the second rank tensors and potentials, phonon spectra. Received 13 April 2000     

Self-consistent electronic structure of quantum wells by invariant embedding method

A new approach based on the invariant embedding method for the self-consistent calculation of electronic structure of quantum wells is presented and is applied to both neutral quantum well and parabolic quantum well. Numerical results obtained for these structures agree very well with those of previous theoretical and experiment studies. The present approach is expected to lead to a more efficient and stable scheme for the calculation of electronic band structure of quantum structures. Realistic boundary conditions are naturally taken into account in the present calculation which provides a convenient way for studying boundary effects. Received 21 September     

Ground state energy of N Frenkel excitons

By using the composite many-body theory for Frenkel excitons we have recently developed, we here derive the ground state energy of N Frenkel excitons in the Born approximation through the Hamiltonian mean value in a state made of N identical Q = 0 excitons. While this quantity reads as a density expansion in the case of Wannier excitons, due to many-body effects induced by fermion exchanges between N composite particles, we show that the Hamiltonian mean value for N Frenkel excitons only contains a first order term in density, just as for elementary bosons. Such a simple result comes from a subtle balance, difficult to guess a priori, between fermion exchanges for two or more Frenkel excitons appearing in Coulomb term and the ones appearing in the N exciton normalization factor – the cancellation being exact within terms in 1/N_s where N_s is the number of atomic sites in the sample. This result could make us naively believe that, due to the tight binding approximation on which Frenkel excitons are based, these excitons are just bare elementary bosons while their composite nature definitely appears at various stages in the precise calculation of the Hamiltonian mean value.     

Energy spectra of exciton states in disk-shaped GaAs-Ga<Subscript>1-x</Subscript>Al<Subscript>x</Subscript>As quantum dots under growth-direction magnetic fields

A theoretical study, within the effective-mass approximation, of the effects of applied magnetic fields on excitons in disk-shaped GaAs-Ga_1-xAl_xAs quantum dots is presented. Magnetic fields are applied in the growth direction of the semiconductor heterostructure. The parity of the excitonic envelope function related to the simultaneous exchange of z_e→-z_e and z_h→-z_h is a good quantum number and the wave function, both the odd and even parity, can be expanded as combination of products of the quantum well electron and hole function that preserves the parity with appropriate Gaussian functions. We have simultaneously obtained the energies of the excitonic ground and excited states and discuss the behavior of these energies as a function of the magnetic field.     

Comparison study of energy bands and Wannier-Mott excitons in mixed Zn(P As ) and Zn Cd P crystals

Excitonic absorption, reflection and photoluminescence spectra of mixed Zn(P_1-xAs_x)₂ crystals over the full range of x ( 0 ? x ? 1) and Zn_1-xCd_xP₂ crystals at 0 ? x ? 0.05 have been studied at low temperatures (1.8 K). The decrease of the energy gap in Zn(P_1-xAs_x)₂ at the increase of x occurs slightly sublinearly. The rydbergs of excitonic series in this crystals decrease as well, and the dependences Ry ( x ) for all series are strongly superlinear at small x. In Zn_1-xCd_xP₂ crystals the energy gap and rydbergs decrease at the increase of x (at 0 ? x ? 0.05) as well. The dependences of E_g and Ry on x are considerably stronger in Zn(P_1-xAs_x)₂ than in Zn_1-xCd_xP₂. At the increase of x the half-width of excitonic absorption lines increases monotonically in both type crystals that is evidence of the increasing role of fluctuations of crystal potential. Received 13 March 2002 Published online 9 July 2002     

Anisotropic dynamic response of pentacene single crystals

We have investigated the polarization and momentum dependence of singlet excitons in pentacene molecular crystals using inelastic electron scattering. Our results demonstrate that both the direction as well as the absolute value of the momentum are decisive for the spectral intensity of these excitons. Possible implications of this observation for a microscopic understanding of excitons in organic molecular crystals are discussed.