Element-specific magnetization reversal in Fe/Ce multilayers: : a study by X-ray magnetic circular dichroism and the magneto-optic Kerr effect

Fe/Ce multilayers are magnetically soft with coercive fields of a few Oersteds. In this artificial system, the itinerant 5d electrons of Ce are magnetically polarized by hybridization with the spin–split 3d states of Fe. To obtain an insight into the magnetization reversal process, the element selectivity of X-ray magnetic circular dichroism was used to measure the magnetization of the Ce-5d electrons as a function of an applied magnetic field. Comparison with the magnetization curves studied by the magneto-optic Kerr effect, which averages over the whole system, revealed that the coercivity in the hysteresis of the ordered Ce-5d moments is reduced by 50%. We propose that this is an effect of the magnetically disturbed interface or of the complex non-collinear magnetic structure of the Ce layers detected by recent experiments of X-ray resonant magnetic scattering. The results are compared to the X-ray dichroic and Kerr hysteresis loops of the multilayers Fe/La/Ce/La and Fe/CeH_2−δ. These systems are magnetically harder and their coercivities are identical.     

Theoretical study of magnetism and electronic structure of Fe3/Crn(1 1 0) superlattices

The electronic structure and magnetism of Fe₃/Cr_n(1 1 0) (n=1, 3, 5) superlattices (SL) with varying layer thickness have been studied using the full-potential linearized augmented plane-wave (FLAPW) method within the first-principle formalism. The results show that the ferromagnetic state is the preferable phase in the ground state. The magnetic moments of the Fe layers are slightly modified by the presence of the Cr layers. The Cr magnetic moments alternate direction from layer to layer, and an antiferromagnetic coupling between Fe and Cr at the interfacial layer is seen. The magnetic moments of the Cr layers are suppressed because there is a strong hybridization between d-states of both Fe and Cr atoms. Only a small moment is found in the Cr layer. The Cr moment alignment is determined by a delicate balance between the different magnetic interaction.     

Magnetotransport and magnetotunneling in single-layer, two-layer, and three-layer Bi2Sr2Can−1CunOz (n=1,2,3) single crystals

In continuous magnetic fields H up to 28 T, we have studied the out-of-plane transport properties and tunneling characteristics of high-quality nondoped single crystals of the Bi-cuprate family: Bi₂Sr₂CuO_6+δ (Bi2201), Bi₂Sr₂CaCu₂O_8+δ (Bi2212) and Bi₂Sr₂Ca₂Cu₃O_10+δ (Bi2223) grown by an identical method. For all compounds the out-of-plane magnetotransport ρ_c(H) is negative in the temperature region where ρ_c(T) shows in the normal state a semiconducting-like temperature dependence. The negative magnetoresistance of ρ_c corresponds to the suppression of the semiconducting temperature dependence of ρ_c(T) which is found to be isotropic. For the Bi2201 compound, where the normal state can be reached in the available magnetic fields (28 T), a nearly complete suppression of the low-temperature upturn in ρ_c(T) is observed in the highest magnetic fields with a tendency towards a metallic behavior down to the lowest temperatures (0.4 K). Using the break-junction technique, especially for the Bi2212 and Bi2232 compounds, a clear superconducting gap structure can be observed. Both for temperatures above the critical temperature and for magnetic fields above the upper critical field, a pseudogap structure remains present in the tunneling spectra. The applied magnetic fields yield a stronger suppression of the superconducting state compared to that of the normal-state gap structures as manifested in ρ_c(T) transport and tunneling.     

Magnetic properties of single crystalline Zn1−xCoxO thin films

We report on the magnetic properties of single crystalline thin films of Zn_1−xCo_xO (x=0.003–0.14) grown by plasma-assisted molecular beam epitaxy. In order to understand the role of intermediate charge carriers in the magnetic properties of this material two types of films were fabricated, with and without Ga-codoping. Magnetic measurements were made between 2 and 300 K in fields up to 5 T with a Quantum Design SQUID magnetometer. We found that all the tested films exhibit paramagnetic behavior following the Curie–Weiss law, χ=C/(T−θ), with negative Curie–Weiss temperatures and that this behavior holds even under strong n-doping. We show that the magnetization data, M(H), in function of the Co content provide additional evidence in favor of the antiferromagnetic Co–Co interaction in this material. We also observe that these data exhibit an ‘easy plane’ magnetic anisotropy for all the studied Co concentrations. Finally, we develop a simple cluster model, in order to describe the magnetic properties of ZnCoO, which is found to be in good agreement with our experiments.     

Magnetic and electric properties of (Fe,Co)/(Si,Ge) multilayers

We review selected results concerning the interlayer exchange coupling in Fe/Si _x Fe_1−x , Fe/Ge and Co/Si layered structures. Among the ferromagnet/semiconductor systems, Fe/Si structures are the most popular owing to their strong antiferromagnetic interlayer coupling. We show that such interaction depends not only on semiconducting sublayer thickness, but also on deposition techniques and on the chemical composition of the sublayer as well. In similar heterostructures e.g. Fe/Ge, antiferromagnetic coupling was observed only in ion-beam deposited trilayers at low temperatures. In contrast, in Fe/Ge multilayers deposited by sputtering, no such coupling was found. However, when the Ge is partially substituted by Si, antiferromagnetic interlayer coupling appears. For Co/Si multilayers, we observed a very weak exchange coupling and its oscillatory behavior. The growth of Co on Si occurs in an island growth mode. The evolution of magnetic loop shapes can be successfully explained by the interplay between interlayer coupling and anisotropy terms.     

Surface reaction kinetics in oxygen nonstoichiometry re-equilibration of BaTiO3−δ

We report the (bare) surface redox-reaction rate constant that was determined, along with the chemical diffusivity , by a conductivity relaxation technique on Al-doped single crystal and undoped polycrystal BaTiO_3−δ as a function of oxygen activity in its range of −16≤log a_O2≤0 at elevated temperatures of 800–1100 °C. It takes a value in the range of −4<log( /cm s⁻¹)≤−1, which is even larger than that of the oxides that are considered best as oxygen membranes. It has been found that the surface reaction step grows more rate controlling as the electronic transference number gets smaller or the electronic stoichiometric composition (δ≈0) is approached. The oxygen potential drop due to the surface reaction was estimated by an oxygen concentration cell technique. The oxygen potential drop grows larger as the stoichiometric composition is approached, that is in accord with the variation of against oxygen activity.     

Superconductivity magnetism and low temperature specific heat in YBa2(Cu1−xFex)3O7−δ with δ0 and δ1

Magnetic and low temperature specific heat measurements have been performed on iron doped YBa₂(Cu_1−xFe_x)₃O_7−δ samples with different oxygen contents (δ0 and δ1). Iron doping induces an orthorhombic to tetragonal transition and a decrease of both T_c and diamagnetic signal. Low temperature specific heat measurements reveal a Schottky type anomaly for δ0 samples with x=0.01 (1.8 K) and x=0.02 (3 K). This anomaly is attributed to magnetic interactions within iron limited chains. A numerical analysis of this effect is proposed.     

Optical-field profiles in InxGa1−xN -MQW laser structures

In this paper, we calculated the optical fields for In_xGa_1−xN-multiquantum well (MQW) laser structures. Two different optical cavities are compared, the conventional step separate confinement heterostructure (Step) and a graded-index (GRIN) structure with a parabolic variation of the Al content in the Al_xGa_1−xN guide layers. A comparison is made regarding the confinement factor, near- and far-field patterns. An anomalous behavior for the confinement factor is observed in the structure, and it can be eliminated by choosing an appropriated combination of the layer’s thicknesses forming the waveguide. For Al_xGa_1−xN, an improved expression for the refractive index is presented, which shows better agreement with experimental data than previously reported expressions.     

Oxygen nonstoichiometry of Sr(Co,Fe)O3−δ-based perovskites: I. Coulometric titration of SrCo0.85Fe0.10Cr0.05O3−δ by the two-electrode technique

The p(O₂)–T–δ diagram of perovskite-type SrCo_0.85Fe_0.10Cr_0.05O_3−δ was determined by the coulometric titration technique in the temperature range 770–1250 K at oxygen partial pressures from 8 10⁻¹⁰ to 0.5 atm. Stability of the cubic perovskite phase of SrCo_0.85Fe_0.10Cr_0.05O_3−δ, existing down to the oxygen pressures of 10⁻³–10⁻⁵ atm, was found to be slightly higher than that of SrCo_0.80Fe_0.20O_3−δ, probably due to stabilization of oxygen octahedra neighboring Cr⁴⁺ cations. When the oxygen nonstoichiometry of the Cr-containing perovskite decreases from 0.47 to 0.38, the partial molar enthalpy and entropy for overall oxygen incorporation reaction vary in the ranges −165 to −60 kJ mol⁻¹ and 90 to 150 J mol⁻¹ K⁻¹, respectively. Within the stability limits of the single perovskite phase, the p(O₂)–T–δ diagram can be adequately described by equilibrium processes of oxygen incorporation, cobalt disproportionation and interaction of cobalt and iron cations, with the thermodynamic functions independent of defect concentrations. Increasing grain size in SrCo_0.85Fe_0.10Cr_0.05O_3−δ ceramics from submicron size to 100–200 μm has no effect on the oxygen thermodynamics. The two-electrode coulometric titration technique, based on the alternate use of electrodes for oxygen pumping and e.m.f. measurements, is described and verified by studying oxygen nonstoichiometry of La_0.3Sr_0.7CoO_3−δ and PrO_x.     

Hydrogen-controlled interlayer exchange coupling in Fe/LaHx multilayers

Magneto-optic Kerr magnetometry and neutron reflectometry reveal that Fe layers exhibit magnetic exchange coupling through LaH_x spacer layers. Ferromagnetic and antiferromagnetic coupling is observed on multilayers of these materials depending on the thickness of the hydride layers, but without oscillatory behavior. Starting from metallic La dihydride spacer layers the effect of dissolving increasingly more hydrogen was examined. Sign and value of the coupling depend crucially on the hydrogen content x. The coupling can be inverted from antiferromagnetic to ferromagnetic and vice versa. These alterations are due to modifications of the electronic structure of the hydride. When the hydrogen absorption saturates the hydride layers become insulating and the exchange coupling is likely to disappear. In this final state the multilayers are always characterized by a very soft ferromagnetic rectangular hysteresis curve. Upon removal of the hydrogen to the initial concentration the original magnetic structure is restored.     

Asymmetric phase diagram and phase separation in Pr0.5−δCa0.2+δSr0.3MnO3 (−0.04δ0.04)

We present electric and magnetic properties of polycrystalline Pr_0.5−δCa_0.2+δSr_0.3MnO₃, for δ between −0.04 and 0.04, where the hole concentration is n=0.5+δ. In this series, we study the effects of moving n away from 0.5 on both, the phase diagram and phase separated state. We found that the low temperature ferromagnetic fraction X_FM continuously decreases when n increases. As a result, the samples with n<0.5 (large X_FM) exhibit metallic resistivity at low T while for n>0.5 the insulating state predominates. We construct a detailed T–n phase diagram showing the asymmetries around half-doping.     

Electrical properties of perovskite-type La(Cr1−xMnx)O3+δ

Perovskite-type La(Cr_1−xMn_x)O_3+δ (0.0x1.0) was synthesized using a sol–gel process. The crystal structure of La(Cr_1−xMn_x)O_3+δ changes from orthorhombic to rhombohedral at x=0.6. The Mn⁴⁺ ion content increases monotonically in the range 0.2x1.0. The magnetic measurement of La(Cr_1−xMn_x)O_3+δ indicates that a Mn³⁺ ion is a high-spin state with (d)³(dγ)¹. The variation of the average (Cr, Mn)-O distance is explained by ionic radii of the Cr³⁺, the Mn³⁺, the Mn⁴⁺ ions. Since the log σT–1/T curve is linear and the Seebeck coefficient (α) is independent of temperature, it is considered that La(Cr_1−xMn_x)O_3+δ is a p-type semiconductor and exhibits the hopping conductivity.     

Vertical transport and relaxation mechanisms in δ-doping superlattices

We report on electron transport in growth direction and relaxation mechanisms in δ-doped GaAs-superlattices. In order to investigate pure electron transport, n-type δ–n–i–p–i structures sandwiched between two n⁺-cladding layers have been investigated, with doping induced barrier heights ΔV smaller than the band gap energy E_g of the host material. An exponential increase of the current is expected with increasing bias due to tunneling through a decreasing barrier. At elevated temperatures, thermally activation over the barriers becomes possible. A simple WKB-model describes the experimental data reasonably well. Moreover, a current step appears in the I–V characteristics at a critical field which is clearly below the breakthrough value. Opto-electrical measurements confirm the existence of holes in the structure at fields larger than the critical field. A model is presented which explains the photocurrent and electroluminescence measurements consistently. The key mechanism is based on a few ballistically traveling electrons that can gain enough energy for interband avalanche multiplication.     

Weak-field magnetoresistance anomaly and Shubnikov–de Haas oscillations in Sn-doped InSb thin films on GaAs (100) substrates

Distinctive magnetoresistance (MR) effects in weak magnetic fields before the appearance of Shubnikov–de Haas (SdH) oscillations at low temperatures in Sn-doped (7×10¹⁶ cm⁻³) InSb films grown on GaAs(100) substrates by MBE have been investigated with decreasing film thickness d from 1 μm. The negative MR found in weak magnetic fields for d0.5 μm can be broadly divided into two regimes: T-sensitive negative MR below B_c observed with anisotropy between parallel and perpendicular magnetic field and a T-insensitive parabolic one above B_c observable only under in-plane magnetic fields. The latter is ascribable to the skipping orbit effect due to surface boundary scattering. In vanishing magnetic fields far below B_c, the negative MR reduces with decreasing d and the different positive MR overlaps with it below 0.5 μm, eventually dominating the positive MR at d0.2 μm. These results have been analyzed using a two-layer model for the films, where the composition of the upper layer under the surface and the lower one adjacent to the InSb/GaAs interface is assumed. The MR data in the extremely weak magnetic fields below 100 G for each layer have been successfully fitted to the two-dimensional (2D) weak localization (WL) theory. These results explain that the crossover from the 2D WL to the weak anti-localization (WAL) occurs when the interface is approached with the increase of SO interaction in the layers caused by the increased influence of the asymmetric potential at the hetero interface (Rashba term) and the SO rate in the intrinsic InSb film due to the crystal field of the zinc-blende structure (Dresselhaus term) is as small as τ_so⁻¹3×10⁸ s⁻¹.     

Magnetische untersuchungen an mischkristallen der quasibinären legierungssysteme (Cd Te)1-x (Mn Te)x und (Sn Te)1-x (Mn Te)x

The magnetic susceptibility and magnetization are presented for polycrystalline samples of the alloy systems Cd_1-xMn_xTe 0 < x 0.1 and Sn_1-xMn_xTe 0 < 4 0.4. The magnetic measurements were performed between 2.3 K and 300 K in external magnetic fields up to 11 kOe. At sufficiently high temperatures the susceptibility can be described by a Curie-Weiss law. In the system Sn_1-xMn_xTe θ_p is positive. A linear dependence θ_p ∞ x was found with θ_p(0.4) = 49 K. In the series Cd_1-xMn_xTe θ_p changes sign. For θ < x < 0.04 θ_p is positive with a maximum θ_p ≈ 10 K at x = 0.02. In the region x #62; 0.04 θ_p becomes negative with θ_p = -35 K at x = 0.1. The effective spin value of manganese is S_eff #62; 5/2 for all the samples. The investigation was done to check the assumption that ferromagnetic coupling may exist in tellurides of manganese if the shortest distance d_MnMn is greater than 3.4 Å. This hypothesis has been stated. In the case θ_p #62; 0 the results are partly explained by the RKKY exchange coupling.     

Influence of the doping level on the charge distribution among the inequivalent CuO2 layers in Tl2Ba2Ca2Cu3O10−δ : a NMR study

and NMR measurements in the normal and superconducting states of Tl₂Ba₂Ca₂Cu₃O_10−δ with different δ are reported. In the overdoped Tl2223 sample with T_c=117 K (T_c^opt=123 K) and δ₁<δ^opt different temperature dependencies of the Knight shift are revealed for inequivalent CuO₂ layers. For the inner CuO₂ layer with the square oxygen coordination of Cu the decrease of with temperature is more gradual. In going towards the underdoped Tl2223 with T_c=104 K and δ₂>δ^opt the changes of with temperature are found to be the same for both types of copper layers. The quadrupole coupling constants for copper and oxygen from different CuO₂ layers were obtained. From the variations with doping of the valence contribution to the electric field gradient at copper sites, we estimate both the hole numbers at Cu and oxygen sites and the real concentration of mobile hole carriers n_h in each of inequivalent CuO₂ layers. In the overdoped Tl2223 sample the charge density in the inner layer differs from the one in the outer plane (with five-fold oxygen coordination for Cu). Our results show that the inhomogeneity of the charge distribution disappears in the underdoped regime. The results are compared with calculations of the charge distribution among the CuO₂ planes in multilayered cuprates reported by Haines and Tallon [E.M. Haines, J.L. Tallon, Phys. Rev. B 45 (1992) 3127].     

Magnetocrystalline symmetry, spin statics and dynamics in high-temperature superconductors

The symmetry analysis of the magnetic structures of La₂CuO₄ and YBa₂Cu₃O_6+δ (δ 0.4) antiferromagnetic oxide has been carried out. The spin configurations and spin-reorientation transition fields have been found. The frequencies of uniform spin oscillations and the external field dependence of their polarization properties have been calculated. It has been shown that the spin excitation branches may include exchange modes among which some dipole-active modes can be present. The spectrum of the inelastic light scattering accompanied with the excitation of spin and libration (tilting) freedom degrees has been discussed.     

Layer magnetization canting in 57Fe/FeSi multilayer observed by synchrotron Mössbauer reflectometry

Synchrotron Mössbauer reflectometry and CEMS results on a [⁵⁷Fe(2.55 nm)/FeSi\break(1.57 nm)]₁₀ multilayer (ML) on a Zerodur substrate are reported. CEMS spectra are satisfactorily fitted by α‐Fe and an interface layer of random α‐(Fe, Si) alloy of 20% of the ⁵⁷Fe layer thickness on both sides of the individual Fe layers. Kerr loops show a fully compensated AF magnetic layer structure. Prompt X‐ray reflectivity curves show the structural ML Bragg peak and Kiessig oscillations corresponding to a bilayer period and total film thickness of 4.12 and 41.2 nm, respectively. Grazing incidence nuclear resonant Θ–2Θ scans and time spectra (E = 14.413 keV, λ = 0.0860 nm) were recorded in different external magnetic fields (0 < B^ext < 0.95 T) perpendicular to the scattering plane. The time integral delayed nuclear Θ–2Θ scans reveal the magnetic ML period doubling. With increasing transversal external magnetic field, the antiferromagnetic ML Bragg peak disappears due to Fe layer magnetization canting, the extent of which is calculated from the fit of the time spectra and the Θ–2Θ scans using an optical approach. In a weak external field the Fe layer magnetization directions are neither parallel with nor perpendicular to the external field. We suggest that the interlayer coupling in [Fe/FeSi]₁₀ varies with the distance from the substrate and the ML consists of two magnetically distinct regions, being of ferromagnetic character near substrate and antiferromagnetic closer to the surface.     

Measurement of the mass of the Λb baryon

In a data sample of four million hadronic Z decays collected with the ALEPH detector at LEP, four Λ_b baryon candidates are exclusively reconstructed in the Λ_b → Λ_c⁺π⁻ channel, with the Λ_c⁺ decaying into pK⁻π⁺, , or Λπ⁺π⁺π⁻. The probability of the observed signal to be due to a background fluctuation is estimated to be 4.2 × 10⁻⁴. The mass of the Λ_b is measured to be 5614±21 (stat.) ± 4 (syst.) MeV/c².     

Dependence of property, crystal structure and electric conductivity on substitution content and synthetic process of T′-La2−xRExCuO4−δ (RE = Sm and Tb)

We synthesized T′-La_2−xRE_xCuO_4−δ (RE = Sm and Tb) by a co-precipitation method and sintering in vacuum at various temperatures, and investigated relationship among the crystal structure, average valence of Cu, oxygen content and electric conductivity. From X-ray diffraction measurements, it was confirmed that a main phase of the product was T′ structure (S. G.: I4/mmm) regardless of the rare earth element and its concentration, although an impurity phase was observed in a part of samples. In the samples with low average valence of Cu, the resistivity showed a metallic behavior and remarkably decreased at low temperature. Rietveld analyses using synchrotron X-ray diffractions suggested that the electric conductivity was improved by decreasing a bond length of Cu–O1 in the case of La_2−xSm_xCuO_4−δ.