基于TiO2修饰层的量子点发光二极管设计及其性能

量子点发光二极管(QLEDs)具有色饱和度和色纯度高等优点,在照明与显示领域具有广泛应用前景,成为发光领域研究的热点之一.由于器件采用多层结构,表面和界面问题成为制约QLEDs发展的一个棘手问题.本文使用原子层沉积技术在氧化锌(ZnO)电子传输层和量子点(QDs)发光层之间插入不同厚度的二氧化钛(TiO2)薄层,对Zn...     

喷墨打印镉基绿光量子点发光二极管及其界面

喷墨打印镉基量子点发光二极管(QLEDs)有望应用于大尺寸全彩显示面板且具有材料利用率高的特点而广受关注。但目前喷墨打印器件效率远低于旋涂制备的同结构器件,针对这一问题,本文研究了在PVK空穴传输层上喷墨打印绿光量子点器件及量子点墨水溶剂对传输层界面的影响。研究发现,喷墨打印过程中的层间互溶是影响器件效率的关键,在采用正交溶剂结合喷墨工艺优化实现了高质量的膜层与界面后,获得了6.3%的喷墨印刷绿光QLEDs外量子效率。     

基于硅锗异质结的二维量子点阵列的制备与表征

硅基半导体量子点中的自旋量子比特近几年来发展迅速,其单比特门与两比特门操作保真度已经突破了容错量子计算的阈值.在此基础上,如何构建硅基量子点二维阵列变得广受学界关注,然而二维阵列复杂的结构在器件制备和测量上均带来挑战.本文设计并成功制备了一种Si/SiGe异质结上的2×4结构八量子点二维阵列器件.借助输运测量方法测量了八量子点器件的全部电荷稳定性相图,并进一步地使用电荷感应调制测量方法得到了器件内的少电子区电荷稳定性相图,说明了对量子点电荷态的高灵敏度探测能力.此外,通过调控势垒电极展示了对量子点间隧穿耦合的调控作用并测量了多量子点耦合的电荷稳定性相图.本文的研究结果展示了使用Si/SiGe异质结构建自旋量子比特二维阵列的潜力,为未来硅量子点二维阵列的进一步扩展提供经验与参考.     

半导体量子点和碳点基零维/二维异质结光催化剂构筑及应用

半导体量子点因其具有精准的尺寸调控、独特的光电特性、丰富的表面活性位点等优势,在光催化剂设计和机理研究中获得了广泛关注。与传统半导体量子点主要作为光吸收单元不同,新兴的碳点更是在增加光吸收、促进电荷分离和增加表面反应位点等光催化不同环节均展现出优异的应用潜力。然而,量子点光催化剂由于小尺寸带来电荷复合严重、易团聚、稳定性差等问题而限制了其光催化性能。解决这些问题的主要途径之一是将零维(0D)量子点负载到超薄的二维(2D)纳米片上,形成0D/2D纳米复合材料,使量子点更加分散和稳定,且2D纳米材料促进的加速电荷转移能够抑制光生电荷的复合,从而可以有效地改善量子点基光催化剂的催化活性和稳定性。本文系统阐述了半导体量子点和碳点基0D/2D异质结光催化剂的构筑及应用,着重讨论了不同类型0D/2D异质结的光催化作用机理及面临的挑战,最后对其未来发展进行了分析和展望。     

串联耦合三量子点的电荷稳态研究

串联耦合三量子点(serial triple quantum dots,STQD)体系在近十年来受到人们的广.关注,这不仅是提高量子点集成度的一个必然过程,更重要的是可以利用STQD中一些特定的电荷占据态来实现自旋量子比特的快速全电学调控.本文运用常相互作用模型,导出了与外部可观测物理量相关的STQD电化学势,借助数值模拟计算得到STQD在不同中间栅电压下的线性输运二维电荷稳态图(简称二维稳态图),着重研究STQD的各种电荷占据态之间的能量简并点(简称能量简并点),结合实验将STQD中的能量简并点归纳为三种类型,对这些能量简并点的深入理解可以指导实验高效地寻找STQD体系中适合量子计算的工作区.     

利用N型半导体纳米材料抑制单量子点的荧光闪烁特性

利用N型半导体纳米材料氧化铟锡(ITO)作为单CdSe/ZnS量子点的基质来抑制单量子点的荧光闪烁特性. 实验采用激光扫描共聚焦显微成像系统测量了单量子点荧光的亮、暗态持续时间的概率密度分布的指数截止的幂律特性, 并与直接吸附在SiO₂玻片上的单CdSe/ZnS量子点的荧光特性进行比较. 研究发现处于ITO中的单量子点比SiO₂玻片上的单量子点荧光亮态持续时间提高两个数量级, 掺杂于ITO中的单量子点的荧光寿命约减小为SiO₂玻片上的单量子点的荧光寿命的41%, 并且寿命分布宽度变小50%.     

以S-K和V-W模式生长ZnCdSe和ZnSeS量子点及其特性

用低压金属有机化学气相外延(LP-MOCVD)技术,以Stranski Krastanow(S-K)模式,在GaAs衬底上生长了CdSe和ZnCdSe量子点(QDs)。用原子力显微镜(AFM),观测到了外延层低于临界厚度时,CdSe自组装量子点的形成过程,并把其机理归结为表面扩散效应和应变弛豫效应的联合作用。依据理论计算外延层临界厚度值的指导,用LP-MOCVD技术在GaAs衬底上生长了ZnCdSe量子点,详细观测了ZnCdSe量子点的形成和演变,这些过程可用Ostwald熟化过程和形成过程的联合作用来解释。用LP-MOCVD技术,以Volmer Weber(V-W)模式,在GaAs衬底上生长了ZnSeS量子点,随着生长时间的增加,量子点尺寸增大,而量子点密度减少,这些现象可用表面自由能来解释。     

Mn掺杂ZnSe量子点变温发光性质研究

量子点(QD)照明器件中电流导致的焦耳热会使其工作温度高于室温,因此研究量子点的发光热稳定性十分重要。本文利用稳态光谱和时间分辨光谱研究了具有不同壳层厚度的Mn掺杂ZnSe(Mn: ZnSe)量子点的变温发光性质,温度范围是80～500 K。实验结果表明,厚壳层(6.5单层(MLs))Mn: ZnSe量子点的发光热稳定性要优于薄壳层(2.6 MLs)的量子点。从80 K升温到400 K的过程中,厚壳层Mn: ZnSe量子点的发光几乎没有发生热猝灭,发光量子效率在400 K高温下依然可以达到60%。通过对比Mn: ZnSe量子点的变温发光强度与荧光寿命,对Mn: ZnSe量子点发光热猝灭机制进行了讨论。最后,为了研究Mn: ZnSe量子点的发光热猝灭是否为本征猝灭,对具有不同壳层厚度的Mn: ZnSe量子点进行了加热-冷却循环(300-500-300 K)测试,发现厚壳层的Mn: ZnSe量子点的发光在循环中基本可逆。因此,Mn: ZnSe量子点可以适用于照明器件,即使器件中会出现不可避免的较强热效应。     

InGaAs/GaAs量子链的光学特性研究

研究了InGaAs/GaAs量子链的稳态和瞬态光谱特性,特别是载流子的动力学过程.实验发现荧光寿命有很强的探测能量依赖关系,荧光寿命随发光能量的增加而减小;实验还发现,当激发功率较小时,荧光寿命随激发功率增大而增大,当激发功率足够大时,荧光寿命趋于饱和.这些结果清楚地表明,在量子链结构中,参与发光的载流子之间存在明显的耦合和输运现象,进一步分析表明,这种输运主要是由于载流子沿量子链方向的耦合造成的.发光的偏振特性研究进一步证实了载流子沿量子链方向输运过程. 关键词： InGaAs/GaAs 量子点 量子链     

四端双量子点系统中的自旋和电荷能斯特效应

基于非平衡态格林函数方法,理论研究了与四个电极耦合的双量子点系统中的自旋和电荷能斯特效应,考虑了不同电极的磁动量结构和量子点内以及量子点间电子的库仑相互作用对热电效应的影响.结果表明铁磁端口中的磁化方向能够有效地调节能斯特效应:当电极1和电极3中的磁化方向反平行排列时,通过施加横向的温度梯度,系统中将会出现纯的自旋能斯特效应;当电极4从普通金属端口转变为铁磁金属端口时,将同时观测到电荷和自旋能斯特效应.研究发现,能斯特效应对于铁磁电极极化强度的依赖程度较弱,但对库仑排斥作用十分敏感.在量子点内和点间库仑排斥作用的影响下,自旋及电荷能斯特系数有望提高两个数量级.     

Synthesis and Characterization of CdS/CISe Quantum Dots with Core–Shell Structure

Quantum dots have received great interest due to their excellent optoelectronic properties. However, the surface defects of quantum dots affect the carrier transport and ultimately reduce the photovoltaic efficiency. In this paper, a core–shell quantum dot by hot-injection method is prepared to grow a narrow-band semiconductor layer (CuInSe₂ (CISe) quantumdot) on the surface of a broad-band core material (cadmium sulfide (CdS) nanocrystal). The composition, structure, optical properties, and decay lifetime of CdS/CISe core–shells are investigated in more detail by X-ray diffraction (XRD), transmission electron microscopy (TEM), photoluminescence (PL), UV–vis spectrophotometry, and fluorescence spectroscopy. The CdS/CISe core–shell structure has a broadened absorption range and still shows CISe-related quantum effects. The increased size of the core–shell and the smaller specific surface area of the CISe shell layer lead to a lower carrier complexation chance, which improves the carrier lifetime.     

基于量子点的荧光型太阳能聚光器

近年来,量子点在结构可控、光谱调节和光学稳定方面的研究进展,表明基于量子点的聚光器件表现出优于基于传统有机染料分子的光输出性能。量子点聚光器成为目前量子点研究领域的新方向。量子点在宏量制备和绿色制备方面的深入研究,使得量子点的制造成本逐步降低,基于量子点的聚光器具有光电转换效率和成本上的优势。本文综述了量子点聚光器的研究进展,主要包括荧光型聚光器的优点、聚光器对量子点光学性质的要求、器件制备的工艺和器件的性能表征方法。重点阐述了量子点的太阳光吸收能力、荧光量子产率和重吸收等关键因素对聚光器件性能的影响,同时介绍了该领域目前最新的研究方向,展望了廉价太阳能窗户在未来城镇建筑上的潜在应用。     

量子点液晶显示背光技术

量子点材料兼具极高的色纯度、发光颜色可调以及的荧光量子产率高等特点,已成为显示领域中的明星材料,在提升显示器件的色域方面具有巨大潜力。基于量子点材料的液晶显示背光技术是目前量子点材料在显示器件中的主流应用方向,引起了学术界和工业界的广泛关注。本文将综述量子点液晶显示背光技术的研究进展,主要包括量子点材料的选择、背光结构的应用以及材料复合与封装技术的发展现状,重点介绍了目前产业界广泛关注的量子点光学膜技术,特别是国内自主知识产权的低成本钙钛矿量子点光学膜技术,由于其具备广色域(124%NTSC)、易加工、低成本等特点,已成为具有成长潜力的技术路线。     

High Color-Rendering Index and Stable White Light-Emitting Diodes Based on Highly Luminescent Quantum Dots

Solid-phase color converter-based quantum dots (QDs) white light-emitting diodes (WLEDs) have become promising next-generation solid-state light sources. However, the development of these WLEDs’ production still suffers from constraints involving insufficient color-rendering index (CRI), low color stability, and short operation lifetimes. Here, thick-shell Cd_0.05Zn_0.95S/CdSe/Cd_xZn_1–xS spherical quantum wells are developed with good color tunability from green to red regions and high photoluminescence quantum yield (up to 88% for green wavelengths). QDs with five emission colors are used to fabricate a series of WLEDs, which possess a good correlated color temperature tunability from warm (3210 K) to cool (22 000K) white light, and a high CRI Ra (>90). Specifically, the neutral white light device with Commission Internationale de l´Eclairage (CIE, International Commission on illumination) of (0.36, 0.36) and the standard white light device with CIE of (0.33, 0.33) achieve a CRI Ra up to 95.8 and 95.11, respectively, they also exhibit long operating life and great color stability. These results indicate that the improvement of the performance and stability of the WLED based on thick-shell spherical quantum wells is remarkable progress in the commercialization of QD-based solid-state lighting.     

Ion migration in metal halide perovskite QLEDs and its inhibition

Benefiting from the excellent properties such as high photoluminescence quantum yield (PLQY), wide gamut range, and narrow emission linewidth, as well as low-temperature processability, metal halide perovskite quantum dots (QDs) have attracted wide attention from researchers. Despite tremendous progress has been made during the past several years, the commercialization of perovskite QDs-based LEDs (PeQLEDs) is still plagued by the instability. The ion migration in halide perovskites is recognized as the key factor causing the performance degradation of PeQLEDs. In this review, the elements species of ion migration, the effects of ion migration on device performance and stability, and effective strategies to hinder/mitigate ion migration in PeQLEDs are successively discussed. Finally, the forward insights on the future research are highlighted.     

Transport in graphene nanostructures

Graphene nanostructures are promising candidates for future nanoelectronics and solid-state quantum information technology. In this review we provide an overview of a number of electron transport experiments on etched graphene nanostructures. We briefly revisit the electronic properties and the transport characteristics of bulk, i.e., two-dimensional graphene. The fabrication techniques for making graphene nanostructures such as nanoribbons, single electron transistors and quantum dots, mainly based on a dry etching ??paper-cutting?? technique are discussed in detail. The limitations of the current fabrication technology are discussed when we outline the quantum transport properties of the nanostructured devices. In particular we focus here on transport through graphene nanoribbons and constrictions, single electron transistors as well as on graphene quantum dots including double quantum dots. These quasi-one-dimensional (nanoribbons) and quasi-zero-dimensional (quantum dots) graphene nanostructures show a clear route of how to overcome the gapless nature of graphene allowing the confinement of individual carriers and their control by lateral graphene gates and charge detectors. In particular, we emphasize that graphene quantum dots and double quantum dots are very promising systems for spin-based solid state quantum computation, since they are believed to have exceptionally long spin coherence times due to weak spin-orbit coupling and weak hyperfine interaction in graphene.     

Efficient Quantum Dot Light-Emitting Diodes Based on Well-Type Thick-Shell CdxZn1−xS/CdSe/CdyZn1−yS Quantum Dots

Device grade quantum dots (QDs) require QDs ensembles to retain their original superior optical properties as in solution. QDs with thick shells are proven effective in suppressing the inter-dot interaction and preserving the emission properties for QDs solids. However, lattice strain–induced defects may form as the shell grows thicker, resulting in a notable photoluminescence quenching. Herein, a well-type Cd_xZn_1−xS/CdSe/Cd_yZn_1−yS QDs is proposed, where ternary alloys CdZnS are adopted to match the lattice parameter of intermediate CdSe by separately adjusting the x and y parameters. The resultant thick-shell Cd_0.5Zn_0.5S/CdSe/Cd_0.73Zn_0.27S QDs reveal nonblinking properties with a high PL QY of 99% in solution and 87% in film. The optimized quantum dot light-emitting diodes (QLEDs) exhibit a luminance of 31547.5 cd m⁻² at the external quantum efficiency maximum of 21.2% under a bias of 4.0 V. The shell thickness shows great impact on the degradation of the devices. The T₅₀ lifetime of the QLEDs with 11.2 nm QDs reaches 251 493 h, which is much higher than that of 6.5 and 8.4 nm QDs counterparts. The performances of the well-type thick-shell QLEDs are comparable to state-of-the-art devices, suggesting that this type of QDs is a promising candidate for efficient optoelectronic devices.     

Quantum dots in quantum well structures

Recent progress toward fabricating and characterizing quantum dots in III–V quantum well structures is reviewed. Quantum dots made by use of lithography and etching, including deep-etched, barrier-modulated, strain-induced and interdiffused quantum dots, are described. Quantum dots fabricated by growth, including natural quantum dots, dots on patterned substrates, and self-assembled dots, are discussed. Dot sizes and uniformity, energy-level splittings, and luminescence efficiencies that are now being achieved are discussed. The status of key issues, such as the energy relaxation in quantum dots, is mentioned.     

Fluorinated Boron Nitride Quantum Dots: A New 0D Material for Energy Conversion and Detection of Cellular Metabolism

Quantum dots encompass a broad spectrum of optical, catalytic, and electrochemical properties bringing in novel applications in catalysis, imaging, displays, and optoelectronics. Herein, the unanticipated broad‐spectrum light absorption and high fluorescence quantum yield in fluorinated boron nitride (FBN) quantum dots are discussed. A heterostructure of FBN quantum dots with a wide‐bandgap semiconductor, titania nanotube arrays, exhibits high photocatalytic activity as evidenced by high external quantum efficiency extending from ultraviolet to green region of the solar spectrum (≈24% at 400 nm). The high activity is confirmed using photoelectrochemical hydrogen evolution experiments. Further, it is demonstrated that high fluorescence quantum yield could be tapped for the detection of glycolytic activity in cancer cells compared to normal cells. This finding could shift the paradigm of molecular detection using quantum dots. The 0D structure and the gap states introduced through fluorination are believed to be responsible for these unprecedented characteristics of boron nitride.     

Photochromism and magneto-optic response of ZnO:Mn semiconductor quantum dots fabricated by microemulsion route

ZnO:Mn semiconductor quantum dots were prepared by solution casting led microemulsion route. Quantum dots of average size ∼2 nm were noticed in transmission electron micrographs. The present work highlights colour change phenomena (photochromic effect) of quantum dots while subjected to photon illumination. The magneto-optic measurements e.g. magnetic field (H) vs angle of rotation (θ) show step like behavior and is ascribed to the quantum confinement effect of diluted magnetic ZnO:Mn nanostructures. Further, underlying mechanism responsible for exhibiting photochromism and magneto-optic effects are also discussed.