金属纳米颗粒与二维材料异质结构的界面调控和物理性质

二维材料具有原子级光滑表面、纳米级厚度和超高的比表面积,是研究金属纳米颗粒与二维材料的界面相互作用,实时、原位观察金属纳米颗粒的表面原子迁移、结构演化和聚合等热力学行为的重要载体.设计和构筑金属纳米颗粒与二维材料异质结构界面,在原子尺度分析和表征界面结构,揭示材料结构和性能之间的相互关系,对于理解其相互作用和优化器件性能具有重要价值.本文总结了近年来金属纳米颗粒在二维材料表面成核、生长、结构演化及其表征的最新进展,分析了金属纳米颗粒对二维材料晶体结构、电子态、能带结构的影响,探讨了可能的界面应变、界面反应,及其对电学和光学等性质的调控,讨论了金属纳米颗粒对基于二维材料的场效应管器件和光电器件的性能提升策略.为从原子、电子层次揭示微结构、界面原子构型等影响金属纳米颗粒-二维材料异质结性能的物理机制,为金属-二维材料异质结构的研制及其在电子器件、光电器件、能源器件等领域的应用奠定了基础.     

二维氟代苯甲胺钙钛矿结构和光电性能的理论研究

二维铅卤钙钛矿太阳能电池以其高稳定性等优良性质展现出重要的应用价值,越来越多的二维铅卤钙钛矿材料被用作太阳能电池的光吸收层,但是关于二维铅卤钙钛矿材料构效关系的理论研究十分匮乏.本文以苯甲胺铅碘、邻氟苯甲胺铅碘和对氟苯甲胺铅碘二维钙钛矿为出发点,通过第一性原理计算比较了它们的晶体结构、形成能、激子结合能、载流子迁移率以及对应器件的光电性能,以考察不同间隔基阳离子对钙钛矿结构、性质以及光电器件性能的影响.结果表明,二维钙钛矿的形成能绝对值越大,光电器件的稳定性越高;钙钛矿的激子结合能越小,光电器件的短路电流密度越大,归纳总结出预测器件短路电流密度的关系式.在间隔基末端使用吸电子基团修饰有望同时提高光电器件的寿命和短路电流密度.本研究对于二维钙钛矿材料有机间隔阳离子的设计和筛选具有指导意义.     

利用Li+插层调控WS2光电器件响应性能研究

过渡金属硫族化合物由于其具有独特的结构和性质,在光电子学、纳米电子学、储能器件、电催化等领域具有广泛的应用前景,是一类被持续关注的代表性二维层状材料.在材料应用过程中,对材料掺杂特性的调控会极大地改变器件的响应性能.因而,对利用掺杂手段调控过渡金属硫族化合物器件响应性能的研究具有重要的意义.电化学离子插层方法的发展为二维材料的掺杂调控提供了新的手段.本文以WS₂为例,采用电化学离子插层方法对厚层WS₂的掺杂特性进行优化,观察到离子插入后器件电导率的显著增强(约200倍),以及栅压对器件光电响应性能的有效且可逆的调控.本文通过栅压控制离子插层的方法实现对WS₂器件光电响应的可逆可循环调节,为利用离子插层方法调控二维材料光电器件响应性能研究提供了实验基础.     

表界面调控米级二维单晶原子制造

随着芯片尺寸不断缩小,短沟道效应、热效应日趋显著.开发全新的量子材料体系以实现高性能芯片器件应用已成为当前科技发展的迫切需求.二维材料作为一类重要的量子材料,其天然具备原子层厚度和平面结构,能够有效克服短沟道效应并兼容当代微纳加工工艺,非常有望应用于新一代高性能器件方向.与硅基芯片发展类似,二维材料芯片级器件应用必须基于高质量、大尺寸的二维单晶材料制造.然而,由于二维材料的表界面特性,现有体单晶制备技术不能完全适用于单原子层结构的二维单晶制造.因此,亟需发展新的制备策略以实现大尺寸、高质量的二维单晶原子制造.有鉴于此,本文重点综述表界面调控二维单晶大尺寸制备技术发展现状,总结梳理了米级二维单晶原子制造过程中的3个关键调控方向,即单畴生长调控、单晶衬底制备和多畴取向控制.最后,系统展望了大尺寸二维单晶在未来规模化芯片器件方向的潜在应用前景.     

异质结构在光伏型卤化物钙钛矿光电转换器件中的应用

钙钛矿材料由于具有长的载流子扩散长度、较高的吸收系数和较低的缺陷态密度等优点在太阳电池、光电探测器、发光二极管等光电转换器件领域得到广泛应用.同时,层状二维材料、低维半导体纳米结构、金属纳米结构和绝缘材料等功能材料因它们特殊的化学、电学和物理性质而越来越受到人们的关注.为了拓宽钙钛矿材料在光电转换器件的应用,可将钙钛矿与这些功能材料进行组合,形成异质结构,集成两种材料的优点.钙钛矿/功能材料异质结构可作为界面修饰层、电荷传输层、封装层等应用于卤化物钙钛矿光电转换器件中,用来抑制光生载流子的复合损耗,提升载流子的传输性能,改善器件的稳定性等.本文综述了钙钛矿与层状二维材料、低维半导体纳米结构、金属纳米结构和绝缘材料等形成的异质结构在光伏型光电转换器件中应用的最新研究进展,并对该方向未来的发展做出了展望.     

二维原子晶体的转移堆叠方法及其高质量电子器件的研究进展

可剥离至原子层厚度的层状材料被称为二维原子晶体,是凝聚态物理研究的前沿材料体系之一.与体材料相比,二维原子晶体的原子完全暴露,对外界环境极为敏感,因此剥离、转移、旋转、堆叠、封装和器件加工技术对于其电子器件质量和电学输运性质研究尤为关键.本文介绍了二维原子晶体转移工艺的重要发展,尤其是对其二维电子气的输运性质有突破性提升的进展.针对基于二维原子晶体的电子器件,从二维电子气的无序、接触电阻、载流子迁移率、可观测的量子霍尔态等角度衡量器件质量,并详细介绍了与之相对应的转移技术、器件结构与加工工艺.     

超高真空条件下分子束外延生长的单层二维原子晶体材料的研究进展

二维原子晶体材料具有与石墨烯相似的晶格结构和物理性质,为纳米尺度器件的科学研究提供了广阔的平台.研究这些二维原子晶体材料,一方面有望弥补石墨烯零能隙的不足;另一方面继续发掘它们的特殊性质,有望拓宽二维原子晶体材料的应用领域.本文综述了近几年在超高真空条件下利用分子束外延生长技术制备的各种类石墨烯单层二维原子晶体材料,其中包括单元素二维原子晶体材料(硅烯、锗烯、锡烯、硼烯、铪烯、磷烯、锑烯、铋烯)和双元素二维原子晶体材料(六方氮化硼、过渡金属二硫化物、硒化铜、碲化银等).通过扫描隧道显微镜、低能电子衍射等实验手段并结合第一性原理计算,对二维原子晶体材料的原子结构、能带结构、电学特性等方面进行了介绍.这些二维原子晶体材料所展现出的优异的物理特性,使其在未来电学器件方面具有广阔的应用前景.最后总结了单层二维原子晶体材料领域可能面临的问题,同时对二维原子晶体材料的研究方向进行了展望.     

Te掺杂对二维InSe抗氧化性以及电子结构的影响

In Se作为一种典型的二维层状半导体材料,具有优异的电学性能以及适中可调的带隙,在光电器件中表现出诱人的应用前景.然而有研究表明,单硒空位(Vse)体系的In Se易受O₂分子影响,造成In Se材料降解,严重影响其在电子器件领域的应用.本文基于In Se降解机理,提出了碲(Te)替位掺杂的方法,用于提升该材料的环境稳定性.利用密度泛函理论对不同体系电子结构、吸附能、能量反应路径等进行分析,发现Te掺杂不仅显著改善缺陷引起的In Se降解问题,同时可消除Vse产生的缺陷态,起到缺陷补偿作用.具体研究结果如下:1) O₂分子在Te掺杂In Se表面(In Se-Te)的解离能垒高达2.67 e V,说明其具有较强的抗氧化能力;2) O₂分子在In Se-Te表面保持3.87?的距离,吸附能仅有–0.03 e V,表明O₂分子物理吸附在其单层表面;3) Te掺杂不仅提升材料抗氧化能力,同时还消除了Vse产生的缺陷态.该研究结果将有助于进一步提升In Se二维材料器件的环境稳定性,推动In Se二维器件...     

类石墨烯硼-磷单层材料的电子与光学性能的第一性原理计算研究

基于第一性原理计算,对硼-磷单层材料的电子结构和光学性质进行系统地理论研究. 全局结构搜索和第一性原理分子动力学模拟现实二维硼-磷单层材料能量最低的结构与石墨烯类似,具有很高的稳定性. 类石墨烯二维硼-磷单层是直接带隙半导体,带隙宽度1.37 eV,其带隙宽度随层数增加而减少. 硼-磷单层的带隙宽度受外界应力影响.硼-磷单层的载流子迁移率达到106 cm2/V. MoS2/BP二维异质结可用于光电器件,其理论光电转换效率为17.7%?19.7%. 表明类石墨烯硼-磷二维材料在纳米电子器件与光电子器件的潜在应用价值.     

原子层厚度超表面光场调控原理及应用

超表面由亚波长尺度二维人工微结构构成,可以实现对光场振幅、相位、偏振等多参量进行调控,为光场调控提供了优良平台.二维材料作为一种新型层状结构材料,相对于三维体材料有着十分独特的光学和电学特性,其与超表面结合为纳米尺度平面光学器件的发展提供了新的可能.本文综述了基于原子层厚度的二维材料超表面发展,介绍了多种二维材料超表面...     

光栅局域调控二维光电探测器

近年来,二维材料独特的物理、化学和电子特性受到了越来越多的科研人员的关注.特别是石墨烯、黑磷和过渡金属硫化物等二维材料具有优良的光电性能和输运性质,使其在下一代光电子器件领域具有广阔的应用前景.本文将主要介绍二维材料在光电探测领域上的应用优势,概述光电探测器的基本原理和参数指标,重点探讨光栅效应与传统光电导效应的区别,...     

Novel two-dimensional transition metal chalcogenides created by epitaxial growth

Two-dimensional(2D) materials have been a very important field in condensed matter physics, materials science, chemistry, and electronics. In a variety of 2D materials, transition metal chalcogenides are of particular interest due to their unique structures and rich properties. In this review, we introduce a series of 2D transition metal chalcogenides prepared by epitaxial growth. We show that not only 2D transition metal dichalcogenides can be grown, but also the transition metal chalcogenides that do not have bulk counterparts, and even patterned transition metal chalcogenides can be fabricated. We discuss the formation mechanisms of the novel structures, their interesting properties, and potential applications of these 2D transition metal chalcogenides. Finally, we give a summary and some perspectives on future studies.     

大失配、强极化第三代半导体材料体系生长动力学和载流子调控规律

高质量氮化镓(Ga N)材料是发展第三代半导体光电子与微电子器件的根基。大失配、强极化和非平衡态生长是Ga N基材料及其量子结构的固有特点,对其生长动力学和载流子调控规律的研究具有重要的科学意义与实用价值,受到各国科学界与产业界广泛高度重视。本文对大失配、强极化氮化物半导体材料体系外延生长动力学和载流子调控规律进行了研究,旨在攻克蓝光发光效率限制瓶颈,突破高Al和高In氮化物材料制备难题,实现高发光效率量子阱和高迁移率异质结构,制备多波段、高效率发光器件和高频率、高耐压电子器件,实现颠覆性的技术创新和应用,带动电子材料产业转型升级。     

二维平面和范德瓦耳斯异质结的可控制备与光电应用

自石墨烯被发现以来,二维材料因其优异的特性获得了持续且深入的探索与发展,以石墨烯、六方氮化硼、过渡金属硫化物、黑磷等为代表的二维材料相关研究层出不穷.随着二维新材料制备与应用探索的不断发展,单一材料性能的不足逐渐凸显,研究者们开始考虑采用平面拼接和层间堆垛所产生的协同效应来弥补单一材料的不足,甚至获得一些新的性能.利用二维材料晶格结构的匹配构建异质结,实现特定的功能化,或利用范德瓦耳斯力进行堆垛,将不同二维材料排列组合,从而在体系里引入新的自由度,为二维材料的性质研究和实际应用打开了新的窗口.本文从原子制造角度,介绍了二维平面和范德瓦耳斯异质结材料的可控制备和光电应用.首先简要介绍了应用于异质结制备的常见二维材料的分类及异质结的相关概念,然后从原理上分类列举了常用的表征方法,随后介绍了平面和垂直异质结的制备方法,并对其光电性质及器件应用做了简要介绍.最后,对领域内存在的问题进行了讨论,对未来发展方向做出了展望.     

WSe2/GeS 异质结的增强光致发光

二维半导体材料为纳米尺度的光学性质研究提供了良好的支持. 当将其构筑成异质结时, 界面间的相互作用可以改变原光电性质或产生新的性质, 是二维材料光电子器件功能控制的重要手段. 利用机械剥离法制备WSe2/GeS 异质结, 通过发光光谱研究异质结层间激子的光学性质. 结果表明:p 型 GeS 与弱 n 型 WSe2 构筑成异质结时会产生新的层间激子. 与 GeS 和 WSe2 的荧光发射强度相比, 异质结的层间激子发光强度显著增加. 此研究为设计具有先进光电性能的二维半导体器件提供了思路.     

Strained 2D Layered Materials and Heterojunctions

2D layered materials and heterojunctions with excellent ductility and controllable atomic‐layer thicknesses have shown promise for use in advanced electronics and optical functional devices. Tailoring of nanoscale configurations and physical properties is essential and required for bespoke fabrication of advanced devices based on 2D materials. Due to the high strain tolerance of 2D layered materials, strain engineering is an effective method to tune their behaviors of electrons and phonons. A wide variety of 2D materials are available with tunable bandgaps from interface coupling effects, making 2D layered heterojunctions a versatile platform for understanding fundamental physical issues. Most physical properties and functional applications can be tailored by applying strain to 2D layered materials and heterostructures to realize a scheduled target in carrier concentration, mobility, and barrier height. Herein, the latest research on the roles of strain in modulating the physical properties of 2D layered materials and heterojunctions is introduced, focusing on the physical properties behind strain modulation in 2D materials. Understanding and manipulating strain in 2D layered materials and heterojunctions is important and beneficial for creating tunable electronic and optoelectronic constructions with advanced components, including functional flexible and wearable devices.     

Environmental engineering of transition metal dichalcogenide optoelectronics

The explosion of interest in two-dimensional van der Waals materials has been in many ways driven by their layered geometry. This feature makes possible numerous avenues for assembling and manipulating the optical and electronic properties of these materials. In the specific case of monolayer transition metal dichalcogenide semiconductors, the direct band gap combined with the flexibility for manipulation of layers has made this class of materials promising for optoelectronics. Here, we review the properties of these layered materials and the various means of engineering these properties for optoelectronics. We summarize approaches for control that modify their structural and chemical environment, and we give particular detail on the integration of these materials into engineered optical fields to control their optical characteristics. This combination of controllability from their layered surface structure and photonic environment provide an expansive landscape for novel optoelectronic phenomena.     

Graphene-based heterojunction for enhanced photodetectors

Graphene has high light transmittance of 97.7% and ultrafast carrier mobility, which means it has attracted widespread attention in two-dimensional materials. However, the optical absorptivity of single-layer graphene is only 2.3%, and the corresponding photoresponsivity is difficult to produce at normal light irradiation. And the low on—off ratio resulting from the zero bandgap makes it unsuitable for many electronic devices, hindering potential development. The graphene-based heterojunction composed of graphene and other materials has outstanding optical and electrical properties, which can mutually modify the defects of both the graphene and material making it then suitable for optoelectronic devices. In this review, the advantages of graphene-based heterojunctions in the enhancement of the performance of photodetectors are reviewed. Firstly, we focus on the photocurrent generation mechanism of a graphene-based heterojunction photodetector, especially photovoltaic, photoconduction and photogating effects. Secondly, the classification of graphene-based heterojunctions in different directions is summarized. Meanwhile, the latest research progress of graphene-transition metal dichalcogenide (TMD) heterojunction photodetectors with excellent performance in graphene-based heterostructures is introduced. Finally, the difficulties faced by the existing technologies of graphene-based photodetectors are discussed, and further prospects are proposed.     

The rise of two-dimensional tellurium for next-generation electronics and optoelectronics

Single-element two-dimensional (2D) tellurium (Te) which possesses an unusual quasi-one-dimensional atomic chain structure is a new member in 2D materials family. 2D Te possesses high carrier mobility, wide tunable bandgap, strong light-matter interaction, better environmental stability, and strong anisotropy, making Te exhibit tremendous application potential in next-generation electronic and optoelectronic devices. However, as an emerging 2D material, the research on fundamental property and device application of Te is still in its infancy. Hence, this review summarizes the most recent research progresses about the new star 2D Te and discusses its future development direction. Firstly, the structural features, basic physical properties, and various preparation methods of 2D Te are systemically introduced. Then, we emphatically summarize the booming development of 2D Te-based electronic and optoelectronic devices including field effect transistors, photodetectors and van der Waals heterostructure photodiodes. Finally, the future challenges, opportunities, and development directions of 2D Te-based electronic and optoelectronic devices are prospected.     

Band gap engineering of atomically thin two-dimensional semiconductors

Atomically thin two-dimensional(2D) layered materials have potential applications in nanoelectronics, nanophotonics, and integrated optoelectronics. Band gap engineering of these 2D semiconductors is critical for their broad applications in high-performance integrated devices, such as broad-band photodetectors, multi-color light emitting diodes(LEDs), and high-efficiency photovoltaic devices. In this review, we will summarize the recent progress on the controlled growth of composition modulated atomically thin 2D semiconductor alloys with band gaps tuned in a wide range, as well as their induced applications in broadly tunable optoelectronic components. The band gap engineered 2D semiconductors could open up an exciting opportunity for probing their fundamental physical properties in 2D systems and may find diverse applications in functional electronic/optoelectronic devices.