Nanosphere dispersion on a large glass substrate by low dose ion implantation for localized surface plasmon resonance

Dispersing nanospheres on a large glass substrate is the key to fabricate noble metal nanostructures for localized surface plasmon resonance through dispersed nanosphere lithography. This article reports that by modifying the glass surface with low dose ion implantation and successively dip coating the surface with poly(diallyldimethyl ammonium chloride) (PDDA), polystyrene or silica nanospheres can be dispersed on a large glass substrate. Investigation shows that several kinds of ions, such as silicon, boron, argon, and arsenic, can improve the nanosphere dispersion on glass, attributed to the ion bombardment-caused silicon increment. Ion implantation imposes no surface roughness or optical loss to the glass substrate, thus this method is suitable for localized surface plasmon resonance application. Experiments show silicon ion implantation can best disperse the nanospheres. For the gold nanostructures obtained by obliquely evaporating 30 nm of gold film onto the polystyrene nanospheres, which are dispersed on a silicon ion implanted glass substrate, a localized surface plasmon resonance sensitivity of 242 nm/RIU is achieved.     

Profile calculation of gold nanostructures by dispersed-nanosphere lithography through oblique etching for LSPR applications

Nanosphere lithography is an inexpensive method used to fabricate gold nanostructures on a substrate. Using dispersed-nanosphere lithography, in which the nanospheres are dispersed on a substrate, 2D or 3D nanostructures can be fabricated by obliquely depositing a gold film on the nanospheres and etching the gold film afterward. These nanostructures are tunable and acute, and are thus good emitting elements for the localized surface plasmon resonance applications. So far, for the fabrication of nanostructures on a substrate with dispersed nanospheres, only 2D nanostructures have been reported through perpendicular etching. We report in this paper that the 3D nanostructures fabricated by dispersed-nanosphere lithography are rigid non-conformal structures, and perpendicular gold etching can be expanded to oblique etching, which provides more possibilities for fabricating the gold nanostructures in various shapes. The profiles of gold nanostructures after several varying angle depositions, and their final profiles after perpendicular or oblique etching, are calculated in this paper. Our profile simulations are applicable for nanospheres (or microspheres) within the range of tens of nanometers to tens of micrometers, and are consistent with our fabricated nanostructures observed using scanning electron and atomic force microscopy. Electronic Supplementary Material  The online version of this article (doi:) contains supplementary material, which is available to authorized users.     

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利用微波电子回旋共振等离子体增强型化学气相沉积(ECR-PECVD)采用一步法直接在K9玻璃上低温沉积制备了多晶硅薄膜.研究了不同实验参数对薄膜沉积的影响,采用X射线衍射(XRD)、拉曼光谱、扫描电子显微镜(SEM)等实验分析方法对不同条件下制备的样品进行了晶体结构和表面形貌分析,并讨论了多晶硅薄膜沉积的最佳条件.实验结果表明,玻璃衬底上多晶硅薄膜呈柱状生长,并有一定厚度的非晶孵化层;较高氢气比例和衬底温度有利于结晶,薄膜的结晶率达到了62％;晶粒团簇的最大尺寸约为500nm.     

Tuning the plasmon resonance of metallic tin nanocrystals in Si-based materials

The optical properties of metallic tin nanoparticles embedded in silicon-based host materials were studied. Thin films containing the nanoparticles were produced using RF magnetron sputtering followed by ex situ heat treatment. Transmission electron microscopy was used to determine the nanoparticle shape and size distribution; spherical, metallic tin nanoparticles were always found. The presence of a localized surface plasmon resonance in the nanoparticles was observed when SiO₂ and amorphous silicon were the host materials. Optical spectroscopy revealed that the localized surface plasmon resonance is at approximately 5.5 eV for tin nanoparticles in SiO₂, and at approximately 2.5 eV in amorphous silicon. The size of the tin nanoparticles in SiO₂ can be varied by changing the tin content of the films; this was used to tune the localized surface plasmon resonance.     

Controlling SERS intensity by tuning the size and height of a silver nanoparticle array

It is demonstrated that the surface-enhanced Raman scattering (SERS) intensity of R6G molecules adsorbed on a Ag nanoparticle array can be controlled by tuning the size and height of the nanoparticles. A firm Ag nanoparticle array was fabricated on glass substrate by using nanosphere lithography (NSL) combined with reactive ion etching (RIE). Different sizes of Ag nanoparticles were fabricated with seed polystyrene nanospheres ranging from 430 nm to 820 nm in diameter. By depositing different thicknesses of Ag film and lifting off nanospheres from the surface of the substrate, the height of the Ag nanoparticles can be tuned. It is observed that the SERS enhancement factor will increase when the size of the Ag nanoparticles decreases and the deposition thickness of the Ag film increases. An enhancement factor as high as 2×10⁶ can be achieved when the size of the polystyrene nanospheres is 430 nm in diameter and the height of the Ag nanoparticles is 96 nm. By using a confocal Raman mapping technique, we also demonstrate that the intensity of Raman scattering is enhanced due to the local surface plasmon resonance (LSPR) occurring in the Ag nanoparticle array.     

Compatibility of glass textures with E-beam evaporated polycrystalline silicon thin-film solar cells

For polycrystalline silicon thin films on glass, E-beam evaporation capable of high-rate deposition of amorphous silicon (a-Si) film precursor up to 1 μm/minute is a potentially low-cost solution to replace the main stream a-Si deposition method—plasma enhanced chemical vapour deposition (PECVD). Due to weak absorption of near infrared light and a target of 2 μm Si absorber thickness, glass substrate texturing as a general way of light trapping is vital to make E-beam evaporation commercially viable. As a result, the compatibility of e-beam evaporation with glass textures becomes essential. In this paper, glass textures with feature size ranging from ～200 nm to ～1.5 micron and root-mean-square roughness (Rms) ranging from ～10 nm to 200 nm are prepared and their compatibility with e-beam evaporation is investigated. This work indicates that e-beam evaporation is only compatible with small smooth submicron sized textures, which enhances J _sc by 21 % without degrading V _oc of the cells. Such textures improve absorption-based J _sc up to 45 % with only 90 nm SiN _x as the antireflection and barrier layer; however, the enhancement degrades to ～10 % with 100 nm SiO _x +90 nm SiN _x as the barrier layer. The absorption-based J _sc is abbreviated by J _sc(A), which is deduced by integrating the multiplication product of the measured absorption and the AM1.5G spectrum in the wavelength range 300–1050 nm assuming unity internal quantum efficiency at each wavelength. This investigation is also relevant to other thin-film solar cell technologies which require evaporating the absorber onto textured substrate/superstrate.     

Effect of substrate temperature on gold-catalyzed silicon nanostructures growth by hot-wire chemical vapor deposition (HWCVD)

The effect of substrate temperature on the structural property of the silicon nanostructures deposited on gold-coated crystal silicon substrate by hot-wire chemical vapor deposition (HWCVD) was studied. The uniformity and size of the as-grown silicon nanostructures is highly influenced by the substrate temperature. XRD, Raman and HRTEM measurements show the silicon nanostructures consist of small crystallites embedded within amorphous matrix. The crystallite size of the as-grown silicon nanostructures decreases with increases in substrate temperature. FTIR shows that these silicon nanostructures are highly disordered for sample prepared at substrate temperature above 250 °C. The correlation of crystallinity and structure disorder of the silicon nanostructures growth at different substrate temperature was discussed.     

Enhanced Raman scattering of graphene on Ag nanoislands

The effect of Ag nanoislands on the Raman of graphene was investigated in this work. Compared with that on the bare silicon wafer, Raman enhancement was observed in the graphene film that covered on Ag/Si surface with nanoscale Ag islands, which would be induced by the localized plasmon resonance in Ag nanostructures. The interaction between the graphene sheet and Ag/Si substrate was further studied. The peak shift and line shape of Raman spectroscopy indicated a nonuniform strain distribution in the Ag/Si supported graphene film.     

Plasmonic laser nanoablation of silicon by the scattering of femtosecond pulses near gold nanospheres

We present the fabrication of nanostructures ablated on silicon(100) by the plasmonic scattering of 780 nm, 220 fs laser pulses in the near-field of gold nanospheres. We take advantage of the enhanced plasmonic scattering of ultrashort laser light in the particle near-field to ablate well-defined nanocraters. Gold nanospheres of 150 nm diameter are deposited onto a silicon surface and irradiated with a single laser pulse. We studied the effect of laser polarization on the morphology of ablated nanostructures and estimated the minimum fluence for plasmonic nanoablation. When the polarization of the incident radiation is directed at a 45° angle into the substrate surface, a near-field enhancement of 23.1±7.6 is measured, reducing the required silicon ablation fluence from 191±14 mJ/cm² to 8.2±2.9 mJ/cm². Enhancements are also measured for laser polarizations parallel to the substrate surface when the substrate is angled 0° and 45° to the incident irradiation, giving enhancements of 6.9±0.6 and 4.1±1.3, respectively. Generated nanocrater morphologies show a direct imprint of the particle dipolar scattering region, as predicted in our theoretical calculations. The measured near-field enhancement values agree well with the maximum field enhancements obtained in our calculations. The agreement between theory and measurements supports that the nanocraters are indeed formed by the enhanced plasmonic scattering in the near-field of the nanoparticles. PACS 42.62.-b; 52.38.Mf; 81.65.Cf; 81.16.-c; 78.67.Bf     

Surface plasmon resonance of Ag nanoparticles in the vicinity of a high impedance surface

Surface Plasmon resonance of Ag nanoparticles in the vicinity of a high impedance surface is investigated. Mushroom-like nanostructures were vertically grown on silicon substrate to form a high impedance surface operating in the range of optical frequencies. Formation of Ag nanoparticles on the fabricated high impedance surface was realized using plasma bombardment process. Optical measurements show an enhancement in the surface plasmon resonances of Ag nanoparticles. Also it was shown that the plasmon resonance peak of the Ag nanoparticles shifts to blue when Ag nanoparticles approach to the high impedance surface.     

Fabrication and applications of ultraflexible nanostructures using dielectric heating-assisted nanoimprint on PVC films

We developed dielectric heating-assisted nanoimprint method for rapid fabrication of ultraflexible nanostructures. Using spin-coating polyvinyl-chloride (PVC) film on the glass slide, the dielectric heating on PVC film helped the pattern transfer from the mold to PVC film in few seconds. Various kinds of nanostructures were successfully made on PVC films with about 20-μm thickness. We demonstrated the applications of ultraflexible metallic nanostructures for bending measurement using surface plasmon resonance (SPR) and surface enhanced Raman scattering (SERS) on the curved surfaces. For measuring bending angles using SPR on capped nanowire arrays, the minimum detection angle was 2.4 × 10⁻³ degree under 0.02 nm wavelength resolution. For SERS measurement, the nanorod arrays on a curved substrate can increase SERS signals for two times as compared to planar SERS substrate.     

Aluminum-assisted crystallization and <Emphasis Type="Italic">p</Emphasis>-type doping of polycrystalline Si

Aluminum-doped p-type polycrystalline silicon thin films have been synthesized on glass substrates using an aluminum target in a reactive SiH₄+Ar+H₂ gas mixture at a low substrate temperature of 300 °C through inductively coupled plasma-assisted RF magnetron sputtering. In this process, it is possible to simultaneously co-deposit Si–Al in one layer for crystallization of amorphous silicon, in contrast to the conventional techniques where alternating metal and amorphous Si layers are deposited. The effect of aluminum target power on the structural and electrical properties of polycrystalline Si films is analyzed by X-ray diffraction, Raman spectroscopy, scanning electron microscopy and Hall-effect analysis. It is shown that at an aluminum target power of 100 W, the polycrystalline Si film features a high crystalline fraction of 91%, a vertically aligned columnar structure, a sheet resistance of 20.2 kΩ/□ and a hole concentration of 6.3×10¹⁸ cm⁻³. The underlying mechanism for achieving the semiconductor-quality polycrystalline silicon thin films at a low substrate temperature of 300 °C is proposed.     

Structural properties of polycrystalline silicon films formed by pulsed rapid thermal processing

A novel pulsed rapid thermal processing (PRTP) method has been used for realizing solid-phase crystallization of amorphous silicon films prepared by plasma-enhanced chemical vapour deposition.The microstructure and surface morphology of the crystallized films were investigated using x-ray diffraction and atomic force microscopy.The results indicate that PRTP is a suitable post-crystallization technique for fabricating large-area polycrystalline silicon films with good structural quality,such as large grain size,small lattice microstrain and smooth surface morphology on low-cost glass substrates.     

Realization of aligned three-dimensional single-crystal chromium nanostructures by thermal evaporation

Aligned three-dimensional single-crystal chromium nanostructures are fabricated onto a silicon substrate by thermal evaporation in a conventional thermal evaporator, where the incident angle of Cr vapor flux with respect to the substrate surface normal is fixed at 88°. The effects of the deposition time and incident angle on the morphology of the resulting nanostructures are investigated. The achieved Cr nanostructures are characterized by scanning electron microscopy, energy dispersive X-ray analysis, X-ray diffraction, transmission electron microscopy, high-resolution transmission electron microscopy, and surface area measurement. This study provides a convenient way to fabricate three-dimensional single-crystal Cr nanostructures, which is suitable for batch fabrication and mass production. Finally, the same technique is employed to fabricate the nanostructures of other metals such as Ag, Au, Pd, and Ni.     

Plasmon resonance properties of silver-patterned glass substrates fabricated by anodic alumina oxide templates

Ultra-thin anodic aluminum oxide membranes were prepared and served as deposition masks for fabrication of uniformly sized Ag nanodots with different aspect ratios on glass substrates. The surface plasmon resonance (SPR) properties of the supported Ag nanodots were investigated and compared with the predictions of the generalized Maxwell–Garnett theory. By modeling the nanodots as spheroids without adjusting their real geometrical parameters input to the calculation, the resulting theoretical SPR wavelengths are in good agreement with measured extinction peaks. The discrepancy between the theoretical and experimental plasmon resonance peak maxima is within 10 nm for the nanodots with an aspect ratio of less than 1.5. Although this wavelength discrepancy becomes large as the aspect ratio is increased, it is kept at approximately 35 nm for the nanodots with an aspect ratio of 2.44.     

Self-assembled silver nanoparticles: correlation between structural and surface plasmon resonance properties

We report a facile method for controllable fabrication of high-density silver nanoparticle films with a widely adjustable surface plasmon resonance (SPR) frequency, based on the gas phase cluster beam deposition. On the one hand, we can control the particle size by depositing clusters on silica substrate. Light extinction spectra of the self-assembled Ag nanoparticles with various particle sizes are characterized and show two SPRs, in which a SPR exhibits a redshift from less 400 nm to more than 570 nm with an increase in the particle size, whereas the other shows a slight position shifting. On the other hand, the inter-particle distance of the self-assembled Ag nanoparticles can also be controlled by depositing clusters on silica glass coated with Formvar film, and the SPR wavelength shows a redshift from <400 nm to more than 560 nm, which can be attributed to the increase of the fraction of closely spaced nanoparticle pairs that are near-field coupled with the deposition mass. The size and coverage-dependent SPR properties are also compared with the results from the discrete dipole approximation calculations. The present method of tailoring metallic microstructures could find important applications in plasmonics.     

Novel and low reflective silicon surface fabricated by Ni-assisted electroless etching and coated with atomic layer deposited Al2O3 film

In this paper, nickel nanoparticles (Ni NPs) were deposited on planar silicon and pyramidal silicon wafers by the magnetron sputtering method, and then these Ni NP-covered samples were etched in a hydrofluoric acid, hydrogen peroxide, and deionized water mixed solution at room temperature to fabricate a low reflective silicon surface. An alumina (Al₂O₃) film was then deposited on the surface of the as-etched pyramidal sample by atomic layer deposition to further reduce the reflectance. The morphologies and compositions of these samples were studied by using a field emission scanning electron microscope attached to an energy-dispersive X-ray spectrometer. The surface reflectance measurements were carried out with a UV-Vis-NIR spectrophotometer in a wavelength range of 200–1100 nm. The SEM images show that the as-etched planar and pyramidal silicon samples were covered with many rhombic nanostructures and that some nanostructures on the planar silicon surface were ready to exhibit a flower-like burst. The reflectances of the as-etched planar and pyramidal silicon samples were 5.22 % and 3.21 % in the wavelength range of 400–800 nm, respectively. After being coated with a 75-nm-thick Al₂O₃ film, the etched pyramidal silicon sample showed an even lower reflectance of 2.37 % from 400 nm to 800 nm.     

Nanosphere Templated Metallic Grating Assisted Enhanced Fluorescence

In this paper, enhanced fluorescence from a silver film coated nanosphere templated grating is presented. Initially, numerical simulation was performed to determine the plasmon resonance wavelength by varying the thickness of the silver film on top of a monolayer of 400 nm nanospheres. The simulation results are verified experimentally and tested for enhancing fluorescence from fluorescein isothiocyanate whose excitation wavelength closely matches with the plasmon resonance wavelength of the substrate with 100 nm silver film over nanosphere. The 12 times enhancement in the intensity is attributed to the local field enhancement in addition to the excitation of surface plasmon polaritons along the surface.     

Partial crystallization of silicon by high intensity laser irradiation

Commercial single crystal silicon wafers and amorphous silicon films piled on single crystal silicon wafers were irradiated with a femtosecond pulsed laser and a nanosecond pulsed laser at irradiation intensities between 10¹⁷ W/cm² and 10⁹ W/cm². In the single crystal silicon substrate, the irradiated area was changed to polycrystalline silicon and the piled silicon around the irradiated area has spindly column structures constructed of polycrystalline and amorphous silicon. In particular, in the case of the higher irradiation intensity of 10¹⁶ W/cm², the irradiated area was oriented to the same crystal direction as the substrate. In the case of the lower irradiation intensity of 10⁸ W/cm², only amorphous silicon was observed around the irradiated area, even when the target was single crystal silicon. In contrast, only amorphous silicon particles were found to be piled on the amorphous silicon film, irrespective of the intensity and pulse duration.Three-dimensional thermal diffusion equation for the piled particles on the substrate was solved by using the finite difference methods. The results of our heat-flow simulation of the piled particles almost agree with the experimental results.     

Photocatalytic nano-optical trapping using TiO2 nanosphere pairs mediated with Mie-scattered near field

The localized enhanced near field on nanostructures has been attracting much attention for a template for size-selective optical trapping (tweezers) beyond the diffraction limit. The near-field optical trapping has mainly been studied using metallic substrates such as Au nanodot pairs, periodic Al nanoslits, nanoapertures on an Au film, etc. In this paper, we newly propose a Mie-scattered-near-field optical trapping scheme for size-selective photocatalytic application using pairs of poly-rutile TiO₂ nanospheres. The optical intensity distribution in a 3D-nanogap space between the nanospheres was simulated by a 3D FDTD method. The simulation system consists of the two TiO₂ nanospheres placed on a silica substrate in water. The 400-nm excitation laser is used for both the near-field trapping and the photocatalyst excitation. The optical trapping forces were calculated based on the near-field optical intensity distribution. The trapping stiffness for 20-nm polystyrene sphere at a gap distance of 20 nm was 6.4 pN/nm/W. The optical force vector shows that the object like virus can be trapped with sufficient forces into the nanogap space and then is driven into the direct surface of the TiO₂ sphere. This result suggests that this system works as a photocatalytic trapping for killing virus, protein, etc.