Synthesis and electrical properties of Y2O3: Dy3+ & Eu3+ nanoparticles

Yttrium oxide (Y₂O₃) doped with Dy³⁺ & Eu³⁺ nanoparticle has been synthesized by solution combustion method. The formation of the compounds has been checked by X-ray diffraction method. The crystallite/particle size has been measured using Scherrer formula as well as by transmission electron microscopy which show that the size of the particles are in the nanorange. The frequency and temperature dependent variation of impedance Z*, dielectric constant (ε′), dielectric loss (ε″) and AC conductivity (σ) of Y₂O₃: Dy³⁺ & Eu³⁺ nanoparticles were also measured. The real and imaginary part of complex impedance makes semicircle in the complex plane. The center of semicircle arc is found to be shifted toward higher value of real part of impedance with increasing temperature. This indicates that the conductivity of the material increases with the increase in temperature. Cole–Cole plots demonstrate that the dielectric relaxation process occurs in the material. The AC conductivity (σ _AC) increases with the increase in temperature within the frequency range of 10³–10⁷ Hz confirming the hopping of the electrons in the conduction process. The value of impedance decreases sharply with increasing frequency and attains minimum value after 10⁵ Hz at all temperatures.     

Effect of Mg doping on the electrical properties of SnO2 nanoparticles

Sol-gel derived Mg doped tin oxide (Sn_1−xMg_xO₂) nanocrystals were synthesized with x ranging between 0.5 and 7 at. %. Characteristic single phase tetragonal structure of pure and doped samples was obtained and doping saturation was inferred by X-ray diffraction analysis. Structural, morphological and phase informations were obtained by high resolution transmission electron microscope, field emission scanning electron microscope and X-ray photoelectron spectroscopy respectively whereas bonding information was obtained from Fourier transformed infrared spectroscopy. Measurement of different electrical parameters with frequency (200 Hz-10⁵ Hz) has been carried out at room temperature. Ultrahigh dielectric constant and metallic AC conductivity were observed for undoped tin oxide and the profiles reflected highly sensitive changes in the atomic and interfacial polarizability generated by doping concentrations. Relaxation spectra of tangent loss of any sample did not show any loss peak within the frequency range. Both the grain and grain boundary contributions are observed to increase as the doping concentration increased. Results of first principle calculation based on density functional theory indicated effective Fermi level (E_F) suppression due to Mg doping which is responsible for the experimentally observed conductivity variation. AC conductivity was found to depend strongly on the doping concentration and the defect chemistry of the compound. Mg doped SnO₂ may find applications as a low loss dielectric and high density energy storage material.     

Colossal permittivity in (Li + Nb) co-doped Fe2O3 ceramics

(Li + Nb) co-doped (Li + Nb)_xFe_2-xO₃ (with x = 0.0005, 0.005, 0.05, and 0.1) ceramics were prepared by sol-gel method. Their structural, dielectric, humidity, and magnetic properties were investigated. Colossal permittivity (~10⁴) was approached or achieved in all doped samples even with a very small doping level of x = 0.0005. The colossal permittivity behavior is composed of two dielectric relaxations with the low-temperature one being a polaron relaxation due to electrons hopping between Fe³⁺ and Fe⁴⁺ ions and the high-temperature one being a Maxwell-Wagner relaxation caused by humidity-sensing properties.     

Effect of Zn and Mg doping on structural,dielectric and magnetic properties of tetragonal CuFe2O4

The Cu_1?xA_xFe₂O₄ (A = Zn, Mg; x = 0.0, 0.5) ferrites were successfully synthesized by chemical co-precipitation method. X-ray diffraction and Raman spectroscopy reveals that all the ferrite samples are in single-phase with tetragonal structure for CFO and cubic spinel structure for CZFO and CMFO samples. SEM micrograph shows the variation of grain size with Zn and Mg doping in parent CFO sample. Frequency dependent dielectric response confirms the dielectric polarization and electrical conduction mechanism in the present series with a maximum value of dielectric constant and loss tangent for CZFO sample. The anomaly ～493 K in temperature dependent dielectric constant and dielectric loss is assigned to tetragonal to cubic phase transition in CFO sample. The magnetic measurement explored that the saturation value (M_s) is maximum for CZFO as compared to CFO and CMFO ferrites samples.     

Influence of Zn–Zr ions on physical and magnetic properties of co-precipitated cobalt ferrite nanoparticles

Cobalt ferrite nanoparticles having the chemical formula CoFe_2−2xZr_xZn_xO₄ with x ranging from 0.0 to 0.4 were prepared by chemical co-precipitation method. The powder X-ray diffraction pattern confirms the spinel structure for the prepared compound. The particle size was calculated from the most intense peak (3 1 1) using Scherrer formula. The particle size of the samples was found within the range of 12–23 nm for all the compositions. The magnetic and electrical properties of these materials have been studied as a function of temperature. Activation energy and drift mobility have been calculated from the DC electrical resistivity measurements. Dielectric properties such as dielectric constant and dielectric loss tangent were measured at room temperature in the frequency range 100 Hz–1 MHz.     

Effect of Y2O3 additive on the microstructure and high-frequency properties of Z-type hexaferrites

In order to improve the high-frequency electromagnetic properties of Z-type hexaferrites such as high cut-off frequency and low dielectric constant, Y₂O₃ was introduced. The influence of Y₂O₃ additive on the phase composition, densification, microstructural and electromagnetic properties of the ceramics with composition of Ba₃(Co_0.4Zn_0.6)₂Y_xFe_24−xO₄₁ (x=0−1) was investigated. The results show that as the amount of Y₂O₃ additive increased, the major phase changed to Z-phase; simultaneously, a small amount of garnet phase appeared. With increasing Y₂O₃ content, the garnet phase separated out on grain boundaries as a secondary phase restraining grain growth. When x was varied from 0 to 1, the dielectric constant decreased and the ferroelectric resonance peak shifted toward a higher frequency. Meanwhile, the initial permeability increased at first, and then decreased with further increasing x, which could be mainly attributed to the change of phase composition and sintering density. With increasing Y₂O₃ content, the minimum reflection point of the samples shifted toward a higher frequency.     

Quantification of local oxygen defects around Yttrium ions for yttria-doped ceria–zirconia ternary system

Local coordination structure around Yttrium ions in CeO₂–Y₂O₃ binary and [(CeO₂)_x(ZrO₂)_1?x]_0.8(YO_1.5)_0.2 (x = 0.0 ~ 1.0) ternary system has been investigated by ⁸⁹Y MAS-NMR. NMR spectra are found to be consisted of multiple peaks that can be assigned to 6-, 7- and 8-oxygen coordinated Yttrium ions. Compositional dependence of the spectrum was observed and compared with the previous results for ZrO₂–Y₂O₃ binary system. The present investigation suggested the degree of localization of the oxygen vacancy around the cation is in the order of Zr⁴⁺ > Y³⁺ > Ce⁴⁺. The degree of the oxygen vacancy preference for each cation was quantitatively determined for CeO₂–ZrO₂–Y₂O₃ ternary system the first time.     

Finite size effect and influence of temperature on electrical properties of nanocrystalline Ni–Cd ferrites

Electrical conductivity and dielectric measurements have been investigated for four different average grain sizes ranging from 3 to 7 nm of nanocrystalline Ni_0.2Cd_0.3Fe_2.5−xAl_xO₄ (0.0 ⩽ x ⩽ 0.5) ferrites. The impedance spectroscopy technique has been used to study the effect of grain and grain boundary on the electrical properties of the Al doped Ni–Cd ferrites. The analysis of data shows only one semi-circle corresponding to the grain boundary volume suggesting that the conduction mechanism takes place predominantly through grain boundary volume in the studied samples. The variation of impedance properties with temperature and composition has been studied in the frequency range of 120 Hz–5 MHz between the temperatures 300–473 K. The hopping of electrons between Fe³⁺ and Fe²⁺ as well as hole hopping between Ni³⁺ and Ni²⁺ ions at octahedral sites are found to be responsible for conduction mechanism. The dielectric constant and loss tangent (tan δ) are found to decrease with increasing frequency, whereas they increase with increasing temperature. The dielectric constant shows an anomalous behavior at selected frequencies, while the temperature increases, which is expected due to the generation of more electrons and holes as the temperature increases. The behavior has been explained in the light of Rezlescu model.     

First-principles study of the dielectric properties and infrared reflectance spectrum of Y2O3

Yttrium oxide is an important laser and infrared optical material. The structural, vibrational and dielectric properties of Y ₂O₃ are calculated from first principles using the plane-wave pseudopotential method. The dielectric permittivity tensors, infrared-active phonon frequencies at the Brillouin zone center and the LO/TO splitting are reported within the framework of density functional perturbation theory. Contributions to the static dielectric constant from each infrared-active mode are presented. It is shown that Y ₂O₃ has an electronic dielectric constant larger than that of the lattice contributions. Dielectric, refractive index, extinction coefficient and infrared reflectance spectra of Y ₂O₃ are given, and the figures suggest that Y ₂O₃ presents good transmission properties in the spectrum range above 800 cm^?1 or below 400 cm^?1.     

Thermal,dielectric and conductivity studies on PVA/Ionic liquid [EMIM][EtSO4] based polymer electrolytes

Polymer electrolyte films of (PVA+15 wt% LiClO₄)+x wt% Ionic liquid (IL) 1-ethyl-3-methylimidazolium ethylsulfate [EMIM][EtSO₄] (x=0, 5, 10, 15) were prepared by solution cast technique. These films were characterized using TGA, DSC, XRD and ac impedance spectroscopic techniques. XRD result shows that amorphosity increases as the amount of the IL in PVA+salt (LiClO₄) is increased. DSC results confirm the same (except (PVA+15 wt% LiClO₄)+10 wt% IL). The dielectric and conductivity measurements were carried out on these films as a function of frequency and temperature. The addition of IL significantly improved the ionic conductivity of polymer electrolytes. Relaxation frequency vs. temperature plot for (PVA+15 wt% LiClO₄)+x wt% IL were found to follow an Arrhenius nature. The dielectric behavior was analyzed using real and imaginary parts of dielectric constant, dielectric loss tangent (tan δ) and electric modulus (M′ and M″).     

Effect of Nd substitution on structural and electrical properties of nanocrystalline zinc ferrite

Polycrystalline soft ferrite samples with general formula ZnNd_xFe_2−xO₄ (where x=0, 0.01, 0.02 and 0.03) were synthesized by oxalate co-precipitation method. The samples were characterized by XRD and SEM techniques. The single phase cubic spinel structure of all the samples was confirmed by XRD. The lattice constant and grain size of the samples are found to decrease with increase in Nd³⁺ content. Room temperature DC resistivity of the Nd³⁺ substituted zinc ferrites is 10² times higher than that of zinc ferrite. The dielectric constant (ε′) and dielectric loss (tan δ) of all the samples were measured in the frequency range 20 Hz-1 MHz. The dielectric behaviour is attributed to the Maxwell-Wagner type interfacial polarization. The dielectric loss of the samples is found to decrease with increase in Nd³⁺ content. High resistivity and low dielectric loss makes these ferrites particularly suitable for high frequency applications.     

Doping effect of Y ions on the microstructural and electromagnetic properties of Mn-Zn ferrites

Mn-Zn ferrites doped with different contents of Y³⁺ ions were prepared by conventional two-step synthesis method. The microstructure and electromagnetic properties of the as-prepared Mn-Zn ferrites were investigated. It was found that all the samples consisted of ferrite phases of typical spinel cubic structure, and when Y³⁺ ion content was upto 1.5 mol%, yttriumirongarnet (Y₃Fe₅O₁₂) phase with garnet structure was detected. With increasing doping content of Y³⁺ ions, the lattice constant and grain size increased, and after an increase to its maximum value, the sample apparent and relative densities dropped down. Through the analysis of magnetic properties, it was revealed that the saturation magnetization, and both the real and imaginary parts of permeability of the as-prepared samples raised with increasing doping content of Y³⁺ ions but decreased with more Y³⁺ ions, while their coercivity showed an opposite change trend; and the Curie temperature increased monotonously. The measurement of dielectric properties indicated that the dielectric constant of the doped Mn-Zn ferrites presented a rise with increasing Y³⁺ ion content, and dropped down gradually when more Y³⁺ ions were doped, while the dielectric loss tangent would decrease with Y³⁺ content upto 1.5 mol%, but after that, it increased.     

Structural,morphological, magnetic and dielectric characterization of nano-phased antimony doped manganese zinc ferrites

Nano-phased doped Mn–Zn ferrites, viz., Mn_0.5−x/2Zn_0.5−x/2Sb_XFe₂O₄ for x=0 to 0.3 (in steps of 0.05) prepared by hydrothermal method are characterized by X-ray diffraction, Infrared and scanning electron microscopy. XRD and SEM infer the growth of nano-crystalline cubic and hematite (α-Fe₂O₃) phase structures. IR reveals the ferrite phase abundance and metal ion replacement with dopant. Decreasing trend of lattice constant with dopant reflects the preferential replacement of Fe³⁺ions by Sb⁵⁺ion. Doping is found to cause for the decrease (i.e., 46–14 nm) of grain size. An overall trend of decreasing saturation magnetization is observed with doping. Low magnetization is attributed to the diamagnetic nature of dopant, abundance of hematite (α-Fe₂O₃) phase, non-stoichiometry and low temperature (800 °C) sintering conditions. Increasing Yafet–Kittel angle reflects surface spin canting to pronounce lower M_s. Lower coercivity is observed for x≤0.1, while a large H_c results for higher concentrations. High ac resistivity (~10⁶ ohm-cm) and low dielectric loss factor (tan δ~10⁻²–10⁻³) are witnessed. Resistivity is explained on the base of a transformation in the Metal Cation-to-Oxide anion bond configuration and blockade of conductivity path. Retarded hopping (between adjacent B-sites) of carriers across the grain boundaries is addressed. Relatively higher resistivity and low dielectric loss in Sbdoped Mn–Zn ferrite systems pronounce their utility in high frequency applications.     

Magnetic and dielectric properties of nanophase manganese-substituted lithium ferrite

Nanocrystalline manganese-substituted lithium ferrites viz. Li_0.5Fe_2.5−xMn_xO₄ (2.5≤x≥0) were prepared by sol-gel autocombustion method. X-ray diffraction analysis confirmed that as the concentration of manganese increases the cubic phase changes to the tetragonal phase. The variation of saturation magnetization was studied as a function of manganese content. All the compositions indicate that they are ferrimagnetic in nature. The dielectric constant, dielectric loss tangent and ac conductivity of all samples were measured at room temperature as a function of frequency. These parameters decrease with increase in frequency for all of the samples. The substitution of manganese plays an important role in changing the structural and magnetic properties of these ferrites. The compositional variation of dielectric constant and d.c. resistivity shows an inverse trend of variation with each other.     

Electrical and switching properties of NiAlxFe2−xO4 ferrites synthesized by chemical method

Nickel-aluminum ferrite system NiAl_xFe_2−xO₄ has been synthesized by wet chemical co-precipitation method. The samples were studied by means of X-ray diffraction, d.c. electrical resistivity, a.c. electrical resistivity, a.c. conductivity and switching properties. The XRD patterns confirm the cubic spinel structure for all the synthesized samples. The crystallite size calculated from XRD data which confirm the nano-size dimension of the prepared samples. Electrical properties such as a.c. and d.c. resistivities as function of temperature were studied for various Al substitution in nickel ferrite. The dielectric constant and dielectric loss tangent were also studied as a function of frequency. The dielectric constant follows the Maxwell-Wagner interfacial polarization. A.C. conductivity increases with increase in applied frequency. The d.c. resistivity decreases as temperature increases, which indicate that the sample have semi-conducting nature. Verwey hoping mechanism explains the observed variation in resistivity. The activation energy is derived from the temperature variation of resistivity. Electrical switching properties were studied as I-V measurements. The current controlled negative resistance type switching is observed in all the samples. The Al substitution in nickel ferrite decreases the required switching field.     

Structural,magnetic and dielectric study of Fe2O3 nanoparticles obtained through exploding wire technique

We propose an exploding wire technique based facile approach to prepare Fe₂O₃ nanoparticles in ambient conditions. TG-DSC analysis of the prepared precursor (Fe(OH)₃) nanoparticles were done. The phase, lattice parameter and the average crystallite size were evaluated through X-ray diffraction analysis. The morphology of prepared nanoparticles was studied by scanning electron microscopy and Transmission electron microscope. The functional group formation of Fe₂O₃ nanoparticles and intrinsic stretching vibration bands of Fe–O were estimated through FTIR analysis. The direct band gap of Fe₂O₃ nanoparticles occurring in conjunction with indirect band gaps was established via Tauc plot. The magnetic parameters were studied through Mössbauer spectroscopy, ESR, M-H and M-T plot analysis. The attributes of dielectric behaviour like dielectric constant (ε′), loss tangent (tan δ), dielectric loss (ε″) and alternating current (AC) conductivity (σ_AC) were measured at various temperatures in the frequency range of 10 Hz-10⁶ KHz.     

The effect of zinc concentration on vacancies jump rate, diffusion coefficient and jump length in Cu-Zn ferrite

Samples with the chemical formula Cu_1−xZn_xFe₂O₄ (x=0.2, 0.4, 0.6, 0.8 and 1) were prepared by the standard ceramic method. The dielectric constant and dielectric loss tangent were studied as a function of vacancy jump rate. The results show that the dielectric constant and dielectric loss tangent decrease with increasing vacancy jump rate. In addition, the electron jump length in the octahedral sites was studied as a function of zinc concentration. The increase in jump length with Zn concentration has been attributed to the substitution of Fe⁺³ for Zn²⁺ at the A-sites, which increases the B-B interaction. The increase of diffusion coefficient with increasing Zn concentration was reinforced by the increase of jump rate.     

Improving the dielectric constant of Al2O3 by cerium substitution for high-k MIM applications

Process compatible high-k dielectric thin films are one of the key solutions to develop high performance metal–insulator–metal (MIM) structures for future microelectronic devices. Engineered cerium–aluminate (Ce_xAl_2–xO₃) thin films were deposited on titanium nitride metal electrodes by electron-beam co-evaporation of ceria and alumina in a molecular beam deposition chamber. X-ray photoelectron spectroscopy clearly reveals that Ce cations can be stabilized in the 3+ valence state in Ce_xAl_2–xO₃ up to x = 0.7 by accommodation in the alumina host matrix. Higher Ce content was observed to result in cerium dioxide segregation in cerium aluminate matrix, probably due to the chemical tendency of Ce cations to exist rather in the 4+ than in the 3+ state. Electrical characterization of the X-ray amorphous Ce_0.7Al_1.3O₃ films reveals a dielectric constant value of about 11 and leakage current lower than 10^?4 A/cm². No parasitic low-k interface formation between the high-k Ce_0.7Al_1.3O₃ film and the TiN metal electrode is detected.     

Interfacial reactions of Ba2YCu3O6+z with coated conductor buffer layer,LaMnO3

Chemical interactions between the Ba₂YCu₃O_6+x superconductor and the LaMnO₃ buffer layers employed in coated conductors have been investigated experimentally by determining the phases formed in the Ba₂YCu₃O_6+x–LaMnO₃ system. The Ba₂YCu₃O_6+x–LaMnO₃ join within the BaO–(Y₂O₃–La₂O₃)–MnO₂–CuO_x multi-component system is non-binary. At 810 °C (p_O2 = 100 Pa) and at 950 °C in purified air, four phases are consistently present along the join, namely, Ba_2?x(La_1+x?yY_y)Cu₃O_6+z, Ba(Y_2?xLa_x)CuO₅, (La_1?xY_x)MnO₃, (La,Y)Mn₂O₅. The crystal chemistry and crystallography of Ba(Y_2?xLa_x)CuO₅ and (La_1?xY_x)Mn₂O₅ were studied using the X-ray Rietveld refinement technique. The Y-rich and La-rich solid solution limits for Ba(Y_2?xLa_x)CuO₅ are Ba(Y_1.8La_0.2)CuO₅ and Ba(Y_0.1La_1.9)CuO₅, respectively. The structure of Ba(Y_1.8La_0.2)CuO₅ is Pnma (No. 62), a = 12.2161(5) Å, b = 5.6690(2) Å, c = 7.1468(3) Å, V = 494.94(4) Å³, and D_x = 6.29 g cm^?3. YMn₂O₅ and LaMn₂O₅ do not form solid solution at 810 °C (p_O2 = 100 Pa) or at 950 °C (in air). The structure of YMn₂O₅ was confirmed to be Pbam (No. 55), a = 7.27832(14) Å, b = 8.46707(14) Å, c = 5.66495(10) Å, and V = 349.108(14) Å³. A reference X-ray pattern was prepared for YMn₂O₅.     

Enhanced ferroelectric,piezoelectric and dielectric properties of (1-x)CaBi2Nb2O9-xBaZr0.2Ti0.8O3 high-temperature piezoelectric composite ceramics

Among Aurivillius layer-structured materials, CaBi₂Nb₂O₉ is a best potential candidate for ultrahigh-temperature applications because of its highest Curie temperature of about 940 °C. In this paper, (1-x)CaBi₂Nb₂O₉-xBaZr_0.2Ti_0.8O₃ composite ceramics were prepared by conventional solid-state sintering method. The dielectric results show that the introduction of BaZr_0.2Ti_0.8O₃ not only increases the permittivity of the material, but also reduces its dielectric loss. The optimum electrical properties were obtained in the x = 0.01 sample with piezoelectric coefficient (d₃₃) of 15.1 pC/N and high ferroelectric remnant polarization (P_r) of 9.9 μC/cm². Furthermore, the composite samples show good thermal depoling performance, the d₃₃ of the x = 0.01 sample is 13.8 pC/N, which is about 91% of the initial value after depoling at 800 °C. Therefore, (1-x)CaBi₂Nb₂O₉-xBaZr_0.2Ti_0.8O₃ is one of the candidates for high temperature piezoelectric materials.