New design of triplexer based on metal–insulator–metal plasmonic ring resonators

In this work, we propose a new design of all-optical triplexer based on of metal–insulator–metal（MIM） plasmonic waveguide structures and ring resonators. By adjusting the radii of ring resonators and the gap distance, certain wavelengths can be filtered out and the crosstalk of each channel can also be reduced. The numerical results show that the proposed MIM plasmonic waveguide structure can really function as an optical triplexer with respect to the three wavelengths, that is, 1310, 1490, and 1550 nm, respectively. It can be widely used as the fiber access network element for multiplexer–demultiplexer wavelength selective in fiber-to-the-home communication systems with transmission efficiency higher than 90%. It can also be a potential key component in the applications of the biosensing systems.     

Electro-optic metal–insulator–semiconductor–insulator–metal Mach-Zehnder plasmonic modulator

The performance of a CMOS-compatible electro-optic Mach-Zehnder plasmonic modulator is investigated using electromagnetic and carrier transport simulations. Each arm of the Mach-Zehnder device comprises a metal–insulator–semiconductor–insulator–metal (MISIM) structure on a buried oxide substrate. Quantum mechanical effects at the oxide/semiconductor interfaces were considered in the calculation of electron density profiles across the structure, in order to determine the refractive index distribution and its dependence on applied bias. This information was used in finite element simulations of the electromagnetic modes within the MISIM structure in order to determine the Mach-Zehnder arm lengths required to achieve destructive interference and the corresponding propagation loss incurred by the device. Both inversion and accumulation mode devices were investigated, and the layer thicknesses and height were adjusted to optimise the device performance. A device loss of <8 dB is predicted for a MISIM structure with a 25 nm thick silicon layer, for which the device length is <3 μm, and <5 dB loss is predicted for the limiting case of a 5 nm thick silicon layer in a 1.2 μm long device: in both cases, the maximum operating voltage is 7.5 V.     

Corrugated-enhanced second harmonic generation in metal–insulator–metal plasmonic waveguides

Nonlinear effects such as second-harmonic generation (SHG) are important for applications such as switching and wavelength conversion. In this study, the generation of second harmonic in metal–insulator–metal (MIM) plasmonic waveguides was investigated for both symmetric and asymmetric structures. Symmetric means that the metals at the top and bottom of the dielectric layer are the same and asymmetric means that the metals at the top and bottom of the dielectric layer are different. Two different structures are considered here as plasmonic waveguide for generation of second harmonic and analyzed using finite-difference time domain method. Besides the structure has grating on both sides for more coupling between photons and plasmons. The wavelength duration of grating per length unit (number of grooves) will be optimized to reach the highest second harmonic generation. To perform this optimization, the wavelength of operation λ = 458 nm is considered. It was shown that field enhancement in symmetric MIM waveguides can result in enhancement of SHG magnitude compared to the literature values and asymmetric device results in more than two orders of magnitude enhancement in SHG compared to symmetric structure. It is also shown that the electric field of second harmonic depends on the thickness of crystal (insulator). So, its thickness is optimized to achieve the highest electric field.     

A surface-plasmon-polariton wavelength splitter based on a metal–insulator–metal waveguide

A surface-plasmon-polariton (SPP) wavelength splitter based on a metal–insulator–metal waveguide with multiple teeth is proposed. Using the transfer-matrix method, a plasmonic band gap is identified in the multiple-toothed structure, and the splitting wavelength of the SPP splitter can be easily adapted by adjusting the widths of the teeth and the gaps. The proposed wavelength splitter is further verified through finite-difference time-domain (FDTD) simulations, in which SPPs with incident wavelengths of 756 nm and 892 nm are successfully split and guided in opposite directions in the waveguide, with extinction ratios of 30 dB and 29 dB, respectively.     

Band-stop optical nanofilters with split-ring resonators based on metal–insulator–metal structure

Novel band-stop filters with circular split-ring resonators based on the metal–insulator–metal(MIM) structure are presented, with their transmission properties of SPPs propagating through the filter simulated by the finite-difference timedomain(FDTD) method. The variation of the gap of the split ring can affect the transmission characteristics, i.e., the transmission spectrum of SPPs exhibiting a shift, which is useful for modulating the filter. Linear and nonlinear media are used in the resonator respectively. By varying the refractive index of the linear medium, the transmission properties can be changed obviously, and the effect caused by changing the incident intensity with a nonlinear medium is similar.Several resonant modes that are applicable can be enhanced by changing the position of the gap of the split ring. Thus, the transmission properties can be modulated by adjusting the size of the gap, varying the refractive index, and changing the incident intensity of the input light. These methods may play significant roles in applications of optical integrated circuits and nanostructural devices.     

Plasmonic planar lens based on stack of metal–insulator–metal waveguides with height tuning

We introduce a technique capable of focusing electromagnetic (EM) waves through plasmonic nanoslits symmetrically arranged along the indented semi-circular surface in silver background. The EM transports through the tuning slits in the form of surface plasmon polaritons (SPPs), and gets the required phase retardations to focus at the focal plane. Due to the subwavelength nature of planar metallic lens, we present the rigorous electromagnetic analysis by using two dimensional (2D) finite difference time domain (FDTD) method. These height-modulated slits with uniform width are demonstrated to have unique advantages in beam manipulation. In combination with previous studies, it is expected that our structure with small number of slits could lead to realization of optimum designs of plasmonic nano-lens.     

Analysis of surface and guided wave plasmon polariton modes in insulator–metal–insulator planar plasmonic waveguides

Theoretical and experimental study of the surface plasmon–polariton and guided wave plasmon polariton modes is presented for the Sapphire/Ag/Polycarbonate/Air structure. Theoretical results are obtained by solving complex multilayer eigenvalue equations as well as the reflectivity equation for this structure. It is proposed that the mode attenuation can be significantly reduced by inserting a low index dielectric buffer between the metal and the guiding dielectric layer. The dispersion and attenuation curves are generated. Both the surface plasmon and guided wave plasmon polariton modes are studied experimentally. The experimental values of the effective refractive indices agree well with the theoretical values. The electric field profiles are generated and used to examine the nature of modes. After optimization of various parameters the condition for low loss single mode guiding is obtained for the proposed structure. Effect of metal thickness on surface plasmon mode is also discussed. It is inferred that in a properly optimized plasmonic waveguide, the losses can be reduced by a factor of 4.     

Tunable plasmonic filter with circular metal–insulator– metal ring resonator containing double narrow gaps

Tunable filter based on two metal–insulator–metal (MIM) waveguides coupled to each other by a ring resonator with double narrow gaps is designed and numerically investigated by finite-difference time-domain (FDTD) simulations. The propagating modes of surface plasmon polaritons (SPPs) are studied. By introducing narrow gaps in ring resonators, the transmission in different resonance modes can be effectively adjusted by changing the gap width (g), and the transmitted peak wavelength has a nonlinear relationship with g. Another structure consisting two cascading ring resonators and regular MIM waveguide have also been proposed. The mechanism based on circular ring resonators with narrow gaps may provide a novel method for designing all-optical integrated components in optical communication and computing.     

Insulator—insulator—metal plasmonic waveguide for parasitic scattering suppression in plasmonic optics

We have shown using rigorous electromagnetic simulations that a planar structure consisting of two isotropic dielectric layers can be used to reduce parasitic scattering in plasmonic elements by an order-of-magnitude (to 1–3%). The proposed approach can be used for designing various plasmonic elements such as lenses, Bragg reflectors and plasmonic crystals.     

Flexible electrically pumped random lasing from ZnO nanowires based on metal–insulator–semiconductor structure

Flexible electrically pumped random laser(RL) based on ZnO nanowires is demonstrated for the first time to our knowledge. The ZnO nanowires each with a length of 5 μm and an average diameter of 180 nm are synthesized on flexible substrate(ITO/PET) by a simple hydrothermal method. No obvious visible defect-related-emission band is observed in the photoluminescence(PL) spectrum, indicating that the ZnO nanowires grown on the flexible ITO/PET substrate have few defects. In order to achieve electrically pumped random lasing with a lower threshold, the metal–insulator–semiconductor(MIS) structure of Au/SiO_2/ZnO on ITO/PET substrate is fabricated by low temperature process. With sufficient forward bias, the as-fabricated flexible device exhibits random lasing, and a low threshold current of ～ 11.5 m A and high luminous intensity are obtained from the ZnO-based random laser. It is believed that this work offers a case study for developing the flexible electrically pumped random lasing from ZnO nanowires.     

Admittance of metal–insulator–semiconductor structures based on graded-gap HgCdTe grown by molecular-beam epitaxy on GaAs substrates

Metal–insulator–semiconductor structures based on n-Hg_1−xCd_xTe (x = 0.19–0.25) were grown by molecular-beam epitaxy on the GaAs (0 1 3) substrates. Near-surface graded-gap layers with high CdTe content were formed on both sides of the epitaxial HgCdTe. Admittance of these structures was studied experimentally in a wide temperature range (8–150) K. It is shown that an increase in the composition of the working layer and a decrease in temperature lead to a decrease in the frequency of transition to high-frequency behavior of the capacitance–voltage characteristics. The differential resistance of space charge region in the strong inversion increases with the composition of the working layer and for x = 0.22 and 0.25, the differential resistance is limited by the Shockley-Read generation. The values of the differential resistance of space charge region at different frequencies and temperatures were found.     

Plasmonic modulator based on gain-assisted metal–semiconductor–metal waveguide

We investigate plasmonic modulators with gain material to be implemented as ultra-compact and ultra-fast active nanodevices in photonic integrated circuits. We analyze metal–semiconductor–metal (MSM) waveguides with InGaAsP-based active material layers as ultra-compact plasmonic modulators. The modulation is performed by changing the gain of the core, that results in different transmittance through the waveguides. A MSM waveguide enables high field localization and therefore high modulation speed. Bulk semiconductor, quantum wells and quantum dots, arranged in either horizontal or vertical layout, are considered as the core of the MSM waveguide. Dependences on the waveguide core size and gain values of various active materials are studied. The designs consider also practical aspects like n- and p-doped layers and barriers in order to obtain close to reality results. The effective propagation constants in the MSM waveguides are calculated numerically. Their changes in the switching process are considered as a figure of merit. We show that a MSM waveguide with electrical current control of the gain incorporates compactness and deep modulation along with having a reasonable level of transmittance.     

Properties of metal–insulator–metal waveguide loop reflector

A new type and easy-to-fabricate metal–insulator–metal(MIM) waveguide reflector based on Sagnac loop is designed and investigated.The transfer matrix theoretical model for the transmission of electric fields in the reflector is established,and the properties of the reflector are studied and analyzed.The simulation results indicate that the reflectivity strongly depends on the coupling splitting ratio determined by the coupling length.Accordingly, different reflectivities can be realized by varying the coupling length.For an optimum coupling length of 750 nm, the 3-dB reflection bandwidth of the MIM waveguide reflector is as wide as 1.5 μm at a wavelength of 1550 nm, and the peak reflectivity and isolation are 78%and 23 dB, respectively.     

Terahertz subwavelength filters based on a 2D lattice of metal wires

The filtering properties of a 2D square lattice made of metallic wires are investigated through the band structures and transmission spectra by the finite-difference time-domain method. All the results show that the transmission can be affected by factors such as wave polarization, incidence direction, and wire radius. It is found that the Γ–M direction and smaller radius of metal wires are preferable for a high-frequency-pass filter for TE waves, while the Γ–X direction and comparatively greater radius of metal wires are suitable for a low-frequency-pass and a wide stop-band filter for TM waves. Band edges of the filters can be tuned by adjusting the radius of wires and lattice constant. The key features of the band structure and the corresponding transmission spectrum are strongly correlated. Our work demonstrates that detailed band maps can help understanding the transmission properties, which are essential for designing wave filters.     

Cross-shaped metal–semiconductor–metal plasmonic crystal for terahertz modulator

The transmission and tuning properties of a cross-shaped plasmonic crystal based on periodic metal–semiconductor–metal (MSM) structures have been investigated in the terahertz (THz) regime. According to the mode analysis, we find that the different resonance modes in the plasmonic crystal show the different changes when this device is actively controlled by the carrier injection of the MSM structures. The longitudinal modes disappear, while the horizontal mode moves to a higher frequency. The former leads to an intensity modulation at 0.5 THz and 1.1 THz when the groove depth h = 60 μm, and the later leads to a band blue-shift from 1.325 THz to 1.38 THz. These results will be applied to THz modulation and tunable filtering.     

Ultracompact and silicon-on-insulator-compatible polarization splitter based on asymmetric plasmonic–dielectric coupling

An ultracompact and silicon-on-insulator-compatible polarization splitter (PS) is proposed by utilizing asymmetric directional coupling between a hybrid plasmonic waveguide and a strip dielectric waveguide. Owing to the plasmon-assisted asymmetry, birefringence is highly enhanced. Polarization splitting can be realized by strong coupling of one polarization while the other polarization is phase-mismatched. As an example, a PS based on strong TM coupling is demonstrated at the wavelength of 1.55 μm with a coupling length of 4.13 μm. Extinction ratios are 20.9 and 16.4 dB for TM and TE polarizations, respectively. The device is also broadband and fabrication-tolerant.     

The effect of the metal cylinder in the slot on the transmission properties of the metal–insulator–metal waveguide

The effects of the size, the position and the shape of the metal cylinder in the slot waveguide on the transmittance properties at the communication wavelength of 1.55 μm are investigated using the finite difference time domain method. Since the surface plasmon polartions excites the local surface plasmon resonance of the metal cylinder, the attenuation in the metal–insulator–metal waveguide is enhanced. Those results provide us with the theoretical foundation for the prediction of the effect of the imperfection in the preparation process on the transmittance properties of the metal–insulator–metal waveguides.     

Effects of gamma irradiation on electrical parameters of metal–insulator–semiconductor structure with silicon nitride interfacial insulator layer

The effects of gamma irradiation on electrical parameters of Au/Si₃N₄/n-Si (MIS) structure were investigated by using the capacitance–voltage (C–V) and conductance–voltage (G/ω–V) measurements. The MIS structure was irradiated using gamma-radiation source at a dose rate of 0.69?kGy/h. The C–V and G/ω–V measurements were carried out at a total dose range of 0–100?kGy for five different frequencies (1, 10, 100, 500 and 1000?kHz). The obtained results showed that the C and G/ω values decrease with the increasing radiation dose due to the irradiation-induced defects at the interface. Also, the observed decrease in the C and G/ω values with the increasing frequency was explained on the basis of interface states (N_ss). The values of series resistance (R_s) increase with the increasing radiation dose. To obtain the real capacitance and conductance of the capacitor, the measured values of C and G/ω were corrected to eliminate the effect of series resistance. The values of N_ss were determined by using the conductance method and were decreased with the increasing radiation dose.     

Hydrogen interaction with GaN metal–insulator–semiconductor diodes

Interaction mechanism of hydrogen with GaN metal–insulator–semiconductor (MIS) diodes is investigated, focusing on the metal/semiconductor interfaces. For MIS Pt-GaN diodes with a SiO₂ dielectric, the current–voltage (I–V) characteristics reveal that hydrogen changes the conduction mechanisms from Fowler–Nordheim tunneling to Poole–Frenkel emission. In sharp contrast, Pt-Si_xN_y-GaN diodes exhibit Poole–Frenkel emission in nitrogen and do not show any change in the conduction mechanism upon exposure to hydrogen. The capacitance–voltage (C–V) study suggests that the work function change of the Schottky metal is not responsible mechanism for the hydrogen sensitivity.     

A wire-form emitter metal–insulator–semiconductor tunnel junction

Physical effects arising due to change of configuration of a MIS system from planar to cylindrical, are theoretically analyzed. Attention is paid to the voltage partitioning and all the components of tunneling current. A simple simulation model is developed enabling prediction of the band diagram details and calculation of the currents. The trends expected with decreasing system radius are elucidated. Cylindrical geometry can be faced with when quantum wire is used as an electron emitter. Similar form may also be roughly attributed to an edge region of conventional MIS capacitors.