Dielectric and piezoelectric properties of the Ba0.92Ca0.08Ti0.95Zr0.05O3 thin films grown on different substrate

Lead free Ba_0.92Ca_0.08Ti_0.95Zr_0.05O₃ (BCZT) thin films were deposited on Pt/Ti/SiO₂/Si and LaNiO₃(LNO)/Pt/Ti/SiO₂/Si substrates by a sol–gel processing technique, respectively. The effects of substrate on structure, dielectric and piezoelectric properties were investigated in detail. The BCZT thin films deposited on LNO/Pt/Ti/SiO₂/Si substrates exhibit (100) orientation, larger grain size and higher dielectric tunability (64%). The BCZT thin films deposited on Pt/Ti/SiO₂/Si exhibit (110) orientation, higher Curie temperature (75 °C), better piezoelectric property (d₃₃ of 50 pm/V) and lower dielectric loss (0.02). The differences in dielectric and piezoelectric properties in the two kinds of oriented BCZT films should be attributed to the difference of structure, in-plane stress and polarization rotation in orientation engineered BCZT films.     

Structural,magnetic and XPS studies of Sn0.95Co0.05O2-0.05 and Sn0.95Fe0.05O2-0.05 nanoparticles

Structural, microstructural, X-ray photoemission spectra (XPS) and magnetic properties of transition metal ion [5 mol% of Co (SC5) and Fe (SF5)]-doped SnO₂ nanoparticles have been studied. The SC5 and SF5 nanoparticles were synthesized by a chemical route using polyvinyl alcohol as surfactant. The doped SnO₂ crystallites were found to exhibit a tetragonal rutile structure and the average grains size was measured by the Scherer relation of X-ray diffraction. Transmission electron micrographs showed that the average grain size of SC5 is smaller than SF5. SC5 nanoparticles showed strong ferromagnetic behaviour but SF5 exhibited an F-centre exchange (FCE) mechanism. Temperature-dependent magnetization showed the values of phase transition temperature. XPS confirmed the presence of Sn–O–Co and Sn–O–Fe bonds in these SC5 and SF5 nanoparticles. The oxidation states of Sn, Co and Fe were found to be +4, +2 and +2, respectively, while the core level XPS peaks of Sn 3d, O 1s, Co 2p and Fe 2p were analyzed.     

Structural,ferroelectric, optical properties of A-site-modified Bi0.5(Na0.78K0.22)0.5Ti0.97Zr0.03O3 lead-free piezoceramics

We reported the role of A-site modification on the structural, ferroelectric, optical and electrical field-induced strain properties of Bi_0.5(Na_0.78K_0.22)_0.5Ti_0.97Zr_0.03O₃ lead-free piezoceramics. The Li⁺ ions with concentration from 0 to 5 mol% were used to substitute at A-site. There was no phase transition when Li⁺ ions was added up to 5 mol%. The electric field-induced strain (S_max/E_max) values increased from 600 to 643 pm/V for 2 mol% Li⁺-added which results from distortion both rhombohedral and tetragonal phase structures. The band gap reduced from 2.88 to 2.68 eV and the saturation polarization decreased from 46.2 to 26.1 μC/cm² when Li⁺ ions concentration increased from 0 to 5 mol% respectively. We expect that this work could be helpful for further understanding the role of A-site dopants in comparison with B-site modification in lead-free Bi_0.5(Na,K)_0.5TiO₃-based ceramics.     

Improved properties & fatigue resistant behaviour OF Ba(Zr0.15Ti0.85)O3 ferroelectric ceramics

The microstructure, dielectric and piezoelectric properties of Zr doped BaTiO₃ ceramics sintered at optimum temperature, are investigated. High energy ball milling technique is adopted to realize nano-sized powders of Ba(Zr_0.15Ti_0.85)O₃ ceramics. Increased boundary mobility of fine powders aided to obtain a relative density of >98.8% of theoretical density corresponding to ceramics under study. Internal stresses in these ceramics are found to be relieved by grain-boundary sliding. The Ba(Zr_0.15Ti_0.85)O₃ ceramics synthesized at relatively low sintering temperatures exhibit remarkable, enhanced dielectric properties viz. improved polarization, high unipolar strain values comparable to Zr doped BaTiO₃ single crystals of same composition, at relatively lower electric fields and also exhibit better fatigue tolerant properties. The underlying mechanisms responsible for superior dielectric, ferroelectric and piezoelectric properties are discussed.     

Depoling of porous Pb0.99(Zr0.95Ti0.05)0.98Nb0.02O3 ferroelectric ceramics under shock wave load

Poled Pb_0.99(Zr_0.95Ti_0.05)_0.98Nb_0.02O₃ ferroelectric ceramics in different porosity depoled under shock wave load. Porosity and material dielectric characteristic effects on the depoling current evolution were discussed. The results showed that under open circuit condition, the dielectric constant of all samples exhibited obvious increase, but as the porosity increased, the dielectric constant decreased. As a result of lower dielectric constant of porous samples during depoling process, the charge-releasing rate is faster than that of dense sample.     

Structural and optical properties of La-doped BaSnO3 thin films grown by PLD

In this study the structural and optical properties of lanthanum-doped BaSnO₃ powder samples and thin films deposited on fused silica were investigaed using laser ablation. Under an oxygen pressure of 5×10⁻⁴ mbar, phase pure BaSnO₃ films with a lattice constant of 0.417 nm and grain size of 21 nm were prepared at 630 °C. The band gap of BaSnO3 powder sample and thin films was calculated to be 3.36 eV and 3.67 eV, respectively. There was a progressive increase in conductivity for thin films of BaSnO₃ doped with 0~7 at% of La. The highest conductivity, 9 Scm⁻¹, was obtained for 7 at% La-doped BaSnO₃. Carrier concentration, obtained from Burstein-Moss (B-M) shift, nearly matches the measured values except for 3 at% and 10 at% La-doped BaSnO₃ thin films.     

Generation of oxygen vacancies in the surface of ferroelectric Pb(Nb,Zr,Ti)O3

Controlled generation of oxygen vacancies in the surface of ferroelectric thin films is crucial to study how surface reduction affects molecular adsorption and catalysis of gas-surface phenomena. We demonstrate the effective reduction in the surface of 4% niobium doped 20/80 PZT (PNZT) thin films. The sample was characterized by X-ray diffraction (XRD), Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM), and heated at 200, 250 and 300 °C in a high vacuum system at 10⁻⁵ T of H₂. Auger peak-to-peak intensities was used to study the elemental concentrations during the reduction experiment. High-resolution XPS spectra were acquired before and after reduction process for detecting the changes of the oxygen signal. Vacancies production rates as slow as 0.21% per minute were achieved and the temperature was not a key parameter in the process. Experiments at higher hydrogen pressures and lower temperatures might improve the control of the vacancies production.     

Double hysteresis loops induced by Mn doping in Pb0.99Nb0.02(Zr0.95Ti0.05)0.98O3 ferroelectric ceramics

Pb_0.99Nb_0.02(Zr_0.95Ti_0.05)_0.98O₃ (PNZT95/5) ceramics with 1 mol% and without Mn doping were prepared via conventional solid state reaction process. X-ray diffraction patterns show that the PNZT95/5 and Mn-doped PNZT95/5 (PNZTM95/5) ceramics, with composition near the boundary of the ferroelectric phase (FE)/antiferroelectric phase (AFE), have a rhombohedral perovskite structure. The ferroelectric behavior of PNZT95/5 ceramics is strongly affected by Mn doping. Without any aging process the PNZTM95/5 ceramics possess double hysteresis loops (P–E loops), whereas the PNZT95/5 ceramics possess normal single hysteresis loops. Due to the defect dipoles formed by effectively negatively charged Mn³⁺ dopants and positively charged O²⁻ vacancies, the PNZTM95/5 ceramics exhibit the double P–E loops. The defect dipole effect has been proved by investigating the P–E loops under different external fields. As a result, the PNZTM95/5 ceramics become “hardened”, exhibiting a high mechanical quality factor (1300).     

Raman studies and optical properties of some (PbO)x(Bi2O3)0.2(B2O3)0.8−x glasses

Five (PbO)_x(Bi₂O₃)_0.2(B₂O₃)_0.8−x glasses, where x = 0, 0.2, 0.3, 0.4 and 0.6, were prepared. The dilatometric glass transition temperature (T_g) was found in the region 470 (x = 0)≥ T_g ( °C) ≥ 347 (x = 0.6), and the density (ρ) varied within 4.57 (x = 0) ≤ ρ (g/cm³) ≤ 8.31 (x = 0.6). Raman spectra indicated the conversion of BO₃ to BO₄ entities for low x values but for x > 0.3, namely, for x → 0.6, back‐conversion occurred, most probably. From the measurements of the optical transmission on very thin bulk samples, the room temperature optical gap values (E_g) were determined to be in the range 4.03 (x = 0)≥ E_g (eV) ≥ 3.08 (x = 0.6). The temperature (T) dependence of the optical gap (E_g(T)) in the region 300 ≤ T(K) ≤ 600 was examined and approximated by a linear relationship of the form of E_g(T) = E_g(0)− γT, where γ × 10⁻⁴(eV/K) varied from 5.1 to 6.8. The non‐linear refractive index (n₂) was estimated from the optical gap values and it was found to correspond to the n₂ values calculated from the experimental third‐order non‐linear optical susceptibility taken from the literature. Copyright © 2008 John Wiley & Sons, Ltd.     

冲击波加载下孔隙率对Pb_(0.99)(Zr_(0.95)Ti_(0.05))_(0.98)Nb_(0.02)O_3铁电陶瓷去极化性能的影响

制备了四种不同孔隙率的Pb0.99(Zr0.95Ti0.05)0.98Nb0.02O3铁电陶瓷,并研究了冲击波作用下孔隙率对陶瓷去极化性能的影响.研究表明:短路负载条件下陶瓷的放电波形不随孔隙的加入而改变,均为方波.多孔陶瓷的放电脉冲幅度较低,脉冲宽度较长.释放的电荷量随着孔隙率的增加而减小,与静态电滞回线测试结果一致.多孔陶瓷具有较低的冲击阻抗,改善了与封装介质的阻抗匹配.用Lysne模型拟合了材料在高电阻负载条件下的放电行为,并指出高电阻负载条件下材料的介电常数是静态介电常数的4—5倍,而且材料的介电常数随孔隙率的增加而减小.冲击波通过样品以后,电路的放电时间常数随着孔隙率的增大而增大.随着电阻的增大,样品负载电压增高,材料铁电-反铁电相变受到抑制,电流上升沿变缓,致密陶瓷出现了击穿现象.     

Structural, optical and scintillation properties of cerium cyclotriphosphates and polyphosphates

The cerium cyclotriphosphate CeP₃O₉·3H₂O and polyphosphate Ce(PO₃)₃ have been optically investigated for the first time. In both materials, excitation and emission spectra under UV and X-ray excitations as well as emission decays of Ce³⁺ were measured at room temperature. The spectroscopic results of anhydrous Ce(PO₃)₃, prepared by progressively heating the corresponding CeP₃O₉. 3H₂O, are discussed and correlated with the structural data.For the Ce(PO₃)₃ polyphosphate material, the Stokes shift of the d-f emission is very small (760 cm⁻¹), inducing an efficient ultraviolet luminescence and a new application as scintillator.     

锰掺杂对Ba(Zr,Ti)O3陶瓷压电与介电性能的影响

采用氧化物固相反应法制备了锰掺杂改性的Ba(Zr_0.06Ti_0.94)O₃陶瓷.研究了锰的掺杂量对Ba(Zr_0.06Ti_0.94)Mn_xO₃ (BZTM)陶瓷的结构、介电和压电性能的影响.实验发现,当锰含量x<0.5 mol%时进入晶格,使材料压电性能提高,损耗减小,表现出受主掺杂的特性;当锰含量x>0.5 mo 关键词： Ba(Zr 3 陶瓷')" href="#">Ti)O₃ 陶瓷 锰掺杂 介电性能 压电性能     

Phase states and ferroelectric properties of Pb(Zr, Sn, Ti)O3 ceramic

The ferroelectric and dielectric properties of Pb_0.99[(Zr_1−x Sn_x)_1−y Ti_y]_0.98Nb_0.02O₃ ceramic of composition (I) x=0.5, y=0.04–0.12 and (II) x=0.4, y=0.06–0.09 were studied, and the T-x and E-T diagrams were constructed. When zinc is substituted for tin, the range of coexistence of the ferroelectric and antiferroelectric phases extends. The range of the nonpolar phase shrinks when the titanium content is increased.     

Structural and optical properties of cadmium magnesium zinc oxide (CdMgZnO) nanoparticles synthesized by sol–gel method

Nanoparticles of ${\mathrm{Cd}}_x{\mathrm{Mg}}_{0.12?x}{\mathrm{Zn}}_{0.88}\mathrm{O}$ $(0\le x\le 0.02)$ were synthesized by a simple sol gel route with the combination of chelating agents. Effect of cadmium on the phase, structural, morphological and optical properties of the synthesized nanoparticles has been studied and reported by using X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM), energy dispersive X-ray (EDX), Fourier transform infrared spectroscopy (FTIR) and UV–Vis diffuse reflectance spectroscopy (UV–vis DRS). The crystal size, lattice parameters, unit cell volume, X-ray density, inter-planar distances and bond length were obtained and analyzed from the XRD data. The X-ray analysis reveals the formation of a single phase with a hexagonal wurtzite structure, where an increase of the cell volume was achieved as the Cd content was increased as well. Synthesized nanoparticle were nearly spherical at nano-size regime and are loosely agglomerated as observed from the SEM analysis. EDX spectra of the composition confirmed the appropriate stoichiometric ratio. A fundamental absorption peak centered at 375 nm was observed from the UV–visible absorption spectra which shifted towards a higher wavelength correlating the narrowing of the energy band gap due to increase in Cd content. The structural adjustment from the IR spectra confirmed the stretching vibration of Zn–O in the ${\mathrm{Cd}}_x{\mathrm{Mg}}_{0.12?x}{\mathrm{Zn}}_{0.88}\mathrm{O}$ lattice with Cd content.     

Structural,thermal and optical study of nanocrystalline silicon produced by ball milling

The ball milling process was used to obtain nanocrystalline cubic silicon. Between 5 and 10 h of milling, amorphous silicon was also formed. The differential scanning calorimetry (DSC) spectrum of a powder milled for 10 h showed that the amorphous–crystalline phase transition occurs at about 450 °C. According to Raman spectroscopy and X‐ray diffraction results, volume fractions of the crystalline, interfacial and amorphous phases were about 30, 39 and 31%, respectively. Copyright © 2010 John Wiley & Sons, Ltd.     

High room-temperature pyroelectric response of MgO-modified Pb0.99(Zr0.95Ti0.05)0.98Nb0.02O3 ceramics

The dielectric and pyroelectric responses of MgO-modified Pb_0.99(Zr_0.95Ti_0.05)_0.98Nb_0.02O₃ ceramics were investigated near F_R(LT)–F_R(HT) phase transition. It was found that MgO additive reduced the F_R(LT)–F_R(HT) phase transition temperature from 41 °C to room temperature (24 °C). Superior room-temperature pyroelectric properties were obtained in the composition of 0.10 wt% MgO addition without DC bias. The largest pyroelectric coefficient, 65 × 10⁻⁸ C cm⁻² K⁻¹, was detected. Accordingly, the detectivity figures of merit F_d had maximum values of 20 × 10⁻⁵ Pa^−1/2, and especially the voltage responsivity F_v = 0.91 m²C⁻¹ is the highest value reported so far among all pyroelectric materials. It shows promising potential for application in uncooled pyroelectric infrared detector.     

Improved ferroelectric,dielectric and magnetic properties with La- and Mn- doped Bi5Ti3FeO15 thin films

A series of La and Mn co-doped Bi₅Ti₃FeO₁₅ (BLTFMO) thin films were prepared by spin-coating deposition route. X-ray diffraction, atomic force microscopy and scanning electron microscopy were used to characterize the structures of these BLTFMO thin films. Ferromagnetic properties are obtained as the La-doping content is 0, 0.1, 0.2, and 0.3 with the transition temperature of 127.2 K, 65.1 K, 48.1 K, and 7.9 K, respectively. Well-defined ferroelectric loops are found in all these BLTFMO films, and a higher remnant polarization of 27.84, 24.21 and 24.02 μC/cm² is obtained in the 0.1, 0.2 and 0.3 La-doped films, respectively. A weak dielectric dispersion for the BLTFMO without La-doping, a strong one in 0.1, 0.2, 0.3 and 0.4 La doped films as indicated by the appearance of a dielectric loss peak, and a weak dispersion in 0.6, 0.8 and 1 La doped ones are demonstrated.     

(Bi0.5Na0.5)TiO3-Ba(Ti,Zr)O3 陶瓷的电性能研究

采用氧化固相法制备了(1-x)(Bi0.5Na0.5)TiO3-xBa(Ti0.95Zr0.05)O3(BNT-BZT)陶瓷,其中掺入量x的值分别为0,0.04,0.05,0.06,0.07.研究了BNT-BZT体系陶瓷的准同型相界以及陶瓷材料的微观结构和性能之间的关系,并探讨了陶瓷的介电性能和铁电等性能.通过探究Ba(Ti,Zr)O3(BZT)掺杂量对BNT 各性能的影响得出了当掺杂量x=0.05得到结构较为致密,介电,铁电性能较好的样本,对工业化研究和生产有重要的意义     

Optical properties of arrays of Si nanopillars on the (1 0 0) surface of crystalline Si

We studied Si nanopillars arrays interesting for potential applications in both photonics and electronics. Two types of the Si nanopillars arrays were investigated. The first type is a regular array (square lattice with the spacing of 270 nm) made up of nanopillars with diameters of 60–70 nm (non-quantum nanopillars). Polarized reflection spectra displaying photonic band gap features and the corresponding photonic band structures were studied. The second type is a non-regular array made up of nanopillars with diameters of 10–20 nm (quantum nanopillars). Enhancement of the optical phonon Raman band, change of selection rules and a low-frequency shift of 0.5 cm⁻¹ of the band corresponding to the quantum size effect in Si cylinders with average diameter 15 nm were observed for the quantum nanopillars.     

锆钛酸钡陶瓷的电场诱导相变特性研究

Ba（Zr0.2Ti0.8）O3（BZT）陶瓷，其铁电相变温度接近室温。对BZT陶瓷的电场诱导相变进行了研究，结果表明介电常数随着电场的增加而减小，预示着电场诱导相变行为。电场强度影响陶瓷的介电常数峰值的位置，并且在广泛温度范围内影响介电常数的大小。介电常数峰值位置随电场的变化量△Tm与电场满足如下关系：△Tm～E^2/3，说明BZT发生了类似的二级相变行为。