Photothermally controlled 50 mA gating in VO2-based planar device using NIR laser diode

By utilizing a near infrared laser diode as an excitation light source, we demonstrated a photothermally controlled current gating of 50 mA in a two-terminal planar device based on a vanadium dioxide (VO₂) thin film grown by a pulsed laser deposition method. The photothermally controlled on/off triggering of the device current was accomplished by controlling the output power of the laser beam that illuminated the VO₂ film. The transient responses of photothermally triggered currents were analyzed when periodical laser pulses from the laser diode stimulated the VO₂ device at a variety of pulse widths and repetition rates. A switching contrast between off-state and on-state currents was evaluated as ∼11905, and average rising and falling times were measured as ∼45 and ∼19 ms, respectively.     

Study of nanocrystalline VO2 thin films prepared by magnetron sputtering and post-oxidation

Nanocrystalline VO2 thin films were deposited onto glass slides by direct current magnetron sputtering and postoxidation. These films undergo semiconductor-metal transition at 70°C, accompanied by a resistance drop of two magnitude orders. The crystal structures and surface morphologies of the VO2 films were characterized by x-ray diffraction (XRD) and atomic force microscope (AFM), respectively. Results reveal that the average grain size of VO2 nanograins measured by XRD is smaller than those measured by AFM. In addition, Raman characterization indicates that stoichiometric VO2 and oxygen-rich VO2 phases coexist in the films, which is supported by x-ray photoelectron spectroscopy (XPS) results. Finally, the optical properties of the VO2 films in UV-visible range were also evaluated. The optical band gap corresponding to 2p-3d inter-band transition was deduced according to the transmission and reflection spectra. And the deduced value, E opt2p-3d = 1.81 eV, is in good agreement with that previously obtained by theoretical calculation.     

硅基二氧化钒相变薄膜电学特性研究

本文以原子层沉积超薄氧化铝(Al₂ O₃)为过渡层, 采用射频反应磁控溅射法在硅半导体基片上制备了颗粒致密并具有(011)择优取向的二氧化钒(VO₂)薄膜. 该薄膜具有显著的绝缘体–金属相变特性, 相变电阻变化超过3 个数量级, 热滞回线宽度约为6℃. 基于VO₂薄膜构建了平面二端器件并测试了不同温度下I-V曲线, 观测到超过2个数量级的电流跃迁幅度, 显示了优越的电致相变特性. 室温下电致相变阈值电压为8.6 V, 电致相变弛豫电压宽度约0.1 V. 随着温度升高到60℃, 其电致相变所需要的阈值电压减小到2.7 V. 本实验制备的VO₂薄膜在光电存储、开关、太赫兹调控器件中具有广泛的应用价值.     

Analysis of resistive switching behaviors of vanadium oxide thin film

We demonstrated the polarization of resistive switching for Cu/VO_x/Cu memory cell. Switching behaviors of Cu/VO_x/Cu cell were tested by semiconductor device analyzer (Agilent B1500A), and the relative micro-analysis of I-V characteristics of VO_x/Cu was characterized by conductive atomic force microscope (CAFM). The I-V test results indicated that both forming and the reversible resistive switching between low resistance state (LRS) and high resistance state (HRS) can be observed under either positive or negative sweep. The CAFM images for LRS and HRS directly exhibited evidences of the formation and rupture of filaments based on positive or negative voltage. Cu/VO_x/Cu sandwiched structure exhibits a reversible resistive switching behavior and shows potential applications in the next generation nonvolatile memory field.     

Electro- and opto-resistive switching behaviors of the Nb doped SrTiO3 films

Nb doped SrTiO₃ (Nb:STO) films were deposited on (100) SrTiO₃ substrates using a pulse laser deposition technique. The effects of deposition pressure on their structural, electrical and optical properties were investigated. Decrease in deposition pressure lead to decrease in grain size and average surface roughness. Various optical parameters such as refractive index, extinction coefficient, and band gap were calculated by applying the envelop or extrapolation methods using the transmittance data obtained from a UV/Vis spectrophotometer. A systematic decrease in resistivity and increment of negative charged carriers was observed with decreasing deposition pressure. Experimental results exhibited electro- and opto-resistive switching behaviors with a resistive transition from high resistance state to low resistance state on the application of current-pulse or UV light. Multi-level resistance states have also been demonstrated using a train of current pulses of different magnitudes or a simultaneous application of current and UV light. Such observed phenomenon makes Nb:STO a potential candidate to be used in future for the fabrication of multi-level memory devices and transparent thin films transistors.     

基于VO2薄膜非致冷红外探测器光电响应研究

VO₂薄膜是非致冷微测辐射热红外探测器热敏电阻材料.研究中应用微电子工艺制备了VO₂溅射薄膜红外探测器,在296K的环境中测试了该探测器在不同的直流偏置、光调制频率下对873K标准黑体源8—12μm红外辐射的光电响应以及器件的噪声电压,在10和30Hz的调制频率下其响应率分别大于17kV/W和接近10kV/W.该探测器实现了探测率D大于1.0×10⁸cm (Hz)^1/2/W,热时间常量为0.011s的8—12μm非致冷 关键词： 非致冷测辐射热探测器 红外探测器 二氧化钒 薄膜     

氧化钒薄膜的微结构及阻变特性研究

采用射频反应溅射法于室温下在Cu/Ti/SiO₂/Si基底上制备了氧化钒薄膜. X-射线衍射、X射线光电子能谱分析仪及原子力显微镜结果表明, 室温下制备的氧化钒薄膜除微弱的V₂O₅ (101)和V₂O₃ (110)峰外, 没有明显的结晶取向, 是VO₂, V₂O₅, V₂O₃及VO的混合相薄膜, 且薄膜表面颗粒大小均匀, 表面均方根粗糙度约为1 nm. 采用半导体参数分析仪对薄膜的电开关特性进行测试. 结果表明薄膜具有较低的开关电压(V_Set<1 V, V_Reset<-0.5 V), 并且具有稳定的可逆开关特性. 薄膜从低阻态转变为高阻态的电流(I_Reset)随限流的增大而增大.通过高低阻态时I-V对数曲线的拟合(高阻态斜率>1, 低阻态斜率=1), 认为Cu离子在薄膜中扩散形成的导电细丝是该体系发生电阻转变的主要机制. 关键词： 氧化钒薄膜 电阻开关 电阻式非挥发存储器 导电细丝     

Direct comparison of the electrical,optical, and structural phase transitions of VO2 on ZnO nanostructures

We examined the temperature-dependent electrical, optical, and structural properties of VO₂ on ZnO nanorods with different lengths in the temperature range from 30 to 100 °C. ZnO nanorods with a uniform length were grown on Al₂O₃ substrates using a metal organic chemical vapor deposition, and subsequently, VO₂ was ex-situ deposited on ZnO nanorods/Al₂O₃ templates using a sputtering deposition. The optical properties of the VO₂/ZnO nanorods were measured simultaneously with direct current (DC) resistance using the reflectivity of an infrared (IR) laser beam with a wavelength of 790 nm. The local structural properties around V atoms of VO₂/ZnO nanorods were simultaneously measured with the DC resistance using x-ray absorption fine structure at the V K edge. Direct comparison of the temperature-dependent resistance, IR reflectivity, and local structure reveals that an optical phase transition first occurs, a structural phase transition follows, and an insulator-to-metal transition finally appears during heating.     

VO2 thin films based active and passive thermochromic devices for energy management applications

VO₂ thin films were fabricated by argon ion beam assisted non-reactive ac dual magnetron sputtering followed by carefully controlled thermal oxidation. This method is known to give high quality compact thin films with uniform high deposition rates. Thin films deposited on both bare glass and indium tin-oxide (ITO) coated glass substrates were studied, respectively, as passive and active thermochromic devices for their electrical and optical switching behaviors. Thin films varying in thicknesses from 65 to 250 nm were investigated. ITO film was used as an integrated heating device to activate the phase transition via an applied bias voltage. Such structures were found to bear several advantages from an application point of view.     

Belt-like VO2(M) with a rectangular cross section: A new route to prepare, the phase transition and the optical switching properties

Belt-like VO₂(M) with a rectangular cross section was first synthesized by the irreversible transformation of VO₂(A) at the elevated temperatures under the inert atmosphere to the best of our knowledge. The as-obtained samples were characterized by a combination of techniques including XRD, SEM and TEM. The processes of converting VO₂(A) to VO₂(M) were briefly discussed. The as-obtained VO₂(M) has belt-like morphology with a rectangular cross section with typical lengths up to several tens of micrometers, widths ranging from tens of nanometers to several micrometers, and thicknesses about 60-150 nm. The morphology and size of the VO₂(M) were dependent on that of the precursor VO₂(A). The phase transition properties of VO₂(M) were investigated by DSC, indicating that it exhibited a strong phase transition at 67.9 °C in the heating cycle and 61.1 °C in the cooling cycle. Furthermore, the optical switching property of VO₂(M) was studied by the variable-temperature infrared spectra, and it was found that the as-obtained VO₂(M) could be used as the optical switch.     

Optical switch with low-phase transition temperature based on thin nanocrystalline VOx film

An optical switch is fabricated by using micromachining technology, which is based on thin nanocrystalline vanadium oxide (VO_x) film, and it consists of four layers: a silicon (Si) substrate layer, a VO_x layer, a Si₃N₄ buffer layer, and an aurum (Au) electrode layer. By applying a switching power supply to a pair of the Au electrodes, the optical switch is controlled to exhibit from an “on” state with semi-conducting phase to an “off” state with metallic phase. The optical switch performance is investigated, and testing results show that its extinction ratio is about 14 dB, its switching response time can achieve about 1.5 ms, and the power dissipation required for stimulating switching to work can be below about 15 mW at least, which is lower than the power dissipation of conventional optical switches based on microstructure thin vanadium dioxide (VO₂) films. This kind of optical switch is potential to be applied as optical switch for optical communication.     

On the Optical Properties of Thin‐Film Vanadium Dioxide from the Visible to the Far Infrared

The insulator‐to‐metal transition (IMT) in vanadium dioxide (VO₂) can enable a variety of optics applications, including switching and modulation, optical limiting, and tuning of optical resonators. Despite the widespread interest in VO₂ for optics, the wavelength‐dependent optical properties across its IMT are scattered throughout the literature, are sometimes contradictory, and are not available at all in some wavelength regions. Here, the complex refractive index of VO₂ thin films across the IMT is characterized for free‐space wavelengths from 300 nm to 30 µm, using broadband spectroscopic ellipsometry, reflection spectroscopy, and the application of effective‐medium theory. VO₂ films of different thicknesses are studied, on two different substrates (silicon and sapphire), and grown using different synthesis methods (sputtering and sol–gel). While there are differences in the optical properties of VO₂ synthesized under different conditions, these differences are surprisingly small in the ≈2–11 µm range where the insulating phase of VO₂ also has relatively low optical loss. It is anticipated that the refractive‐index datasets from this article will be broadly useful for modeling and design of VO₂‐based optical and optoelectronic components, especially in the mid‐wave and long‐wave infrared.     

Wavelength-conversion type picosecond optical switching using a waveguide QPM-SHG/DFG device

We report picosecond all-optical switching in optical communication band using a LiNbO₃ waveguide quasi-phase matched second-harmonic generation/difference-frequency generation device. Analysis based on the beam propagation method showed that 1 ps switching with 3.1% efficiency is feasible with 10 W peak control pulse power. Switching efficiency of ?22 dB was demonstrated using control pulses of 10 ps width and 2 W peak power.     

Oxygen pressure induced structure,morphology and phase-transition for VO2/c-sapphire films by PLD

To investigate the effects of oxygen pressure on the structural and phase transition properties for VO₂/c-sapphire, highly orientated VO₂ thin films were grown on (0001) sapphire substrates by pulsed laser deposition (PLD) with different oxygen pressures. The crystal structure, morphology and component of the films were systematically investigated. The temperature-dependent resistance (R-T) measurement was conducted, which showed the distinct phase transition characteristic for the prepared films. The results indicate that the oxygen pressure plays an important role for the VO₂ film preparation. The film grown at 1.7 Pa has lower phase transition temperature, higher film strain, and smaller grain size than that at 5.4 Pa, while no obvious crystal phase transition is observed. The experiment suggests that even a small change in oxygen pressure can influence the structure, morphology and phase-transition behavior of VO₂ films obviously, and its potential causes are mainly attributed to the reduction of the kinetic energy to the substrate for target atoms caused by the oxygen pressure, the resulting grain aggregation and interfacial stress.     

La2/3Ca1/3MnO3薄膜的光致电阻率变化特性

射频磁控溅射法制备了La_2/3Ca_1/3MnO₃纳米薄膜(LCMO).该薄膜发生FM-PM相变的转变点温度为T_c≈308K（近似为电阻峰值温度T_p）；在不同温度下的光电导性质实验表明所制备的LCMO薄膜在连续激光作用时低温段（Tc）表现为光致电阻率增大效应，即ΔR/R＞0，并在R-T曲线拐点附近取得极大值，（ΔR/R）_max=43.5%；当T>T关键词： 钙钛矿薄膜 光响应 电子自旋 小极化子     

Redox driven conductance changes for resistive memory

The relationship between bias-induced redox reactions and resistance switching is considered for memory devices containing TiO₂ or a conducting polymer in “molecular heterojunctions” consisting of thin (2–25 nm) films of covalently bonded molecules, polymers, and oxides. Raman spectroscopy was used to monitor changes in the oxidation state of polythiophene in Au/P3HT/SiO₂/Au devices, and it was possible to directly determine the formation and stability of the conducting polaron state of P3HT by applied bias pulses [P3HT = poly(3-hexyl thiophene)]. Polaron formation was strongly dependent on junction composition, particularly on the interfaces between the polymer, oxide, and electrodes. In all cases, trace water was required for polaron formation, leading to the proposal that water reduction acts as a redox counter-reaction to polymer oxidation. Polaron stability was longest for the case of a direct contact between Au and SiO₂, implying that catalytic water reduction at the Au surface generated hydroxide ions which stabilized the cationic polaron. The spectroscopic information about the dependence of polaron stability on device composition will be useful for designing and monitoring resistive switching memory based on conducting polymers, with or without TiO₂ present.     

Rectifying resistance switching behaviors of SnO2 microsphere films modulated by top electrodes

Based on the bipolar resistive switching (RS) characteristics of SnO₂ films, we have fabricated a new prototypical device with sandwiched structure of Metal/SnO₂/fluorine-doped tin oxide (FTO). The SnO₂ microspheres film was grown on FTO glass by template-free hydrothermal synthesis, which was evaporated with various commonly used electrodes such as aluminium (Al), silver (Ag), and gold (Au), respectively. Typical self-rectifying resistance switching behaviors were observed for the RS devices with Al and Au electrodes. However, no obvious rectifying resistance switching behavior was observed for the RS device with Ag electrode. Above results were interpreted by considering the different interface barriers between SnO₂ and top metal electrodes. Our current studies pave the ways for modulating the self-rectifying resistance switching properties of resistive memory devices by choosing suitable metal electrodes.     

Compare the phase transition properties of VO2 films from infrared to terahertz range

VO₂ with reversible semiconductor–metal phase transition properties is particularly available for the application in smart opto-electrical devices. However, there are rare reports on comparing its phase transition properties at different ranges. In this study, the VO₂ films are designed with the similar crystalline structure and stoichiometry, but different morphologies by inorganic and organic sol-gel methods, and their phase transition characteristics are compared both at infrared and terahertz range. The results indicate that the VO₂ film prepared by inorganic sol-gel method shows more compact nanostructure. It results in larger resistivity change, infrared and terahertz switching ratio in the VO₂ film. Moreover, it presents that the phase transition intensity of VO₂ film in terahertz range is more sensitive to its microstructure. This work is helpful for understanding the susceptibility of terahertz switching properties of VO₂ to its microstructure. And it can provide insights for the applications of VO₂ in terahertz smart devices.     

Trapped charge‐induced pyroelectric‐like transient response in single high‐resistivity Sb2Se3 nanowires

Dynamic scanning photocurrent microscopy was applied to Sb₂Se₃ crystalline single nanowires (NWs) to analyze their transient photocurrent responses. These NWs exhibited switching behavior with rapid rise and decay times upon illumination by laser pulses. The estimated spectral responsivity and external quantum efficiency for a freshly‐prepared NW at a bias voltage of 0.3 V and excitation wavelength of 488 nm were ～16.9 mA/W and ～42.9%, respectively. A pyroelectric‐like current transient was observed with reduced spectral responsivity when nonpolar Sb₂Se₃ single‐crystalline NWs were excited by laser pulses. Because Sb₂Se₃ NWs were nonpyroelectric or ferroelectric, the pyroelectric‐like current could possibly be attributed to temperature dependent nonlinear space‐charge distributions. Defects produced by the external electrical bias generated and re‐distributed space charges in the NWs. As a result, the temperature dependent inhomogeneous electric field led to nonlinear expansions or contractions of the lattice (electrostriction) that can produce pyroelectric current. We obtained a lower bound of equivalent pyroelectric coefficient α ≥ 60.09 μC/m² K from these materials by fitting the electrical transients. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Electrical,optical and structural properties of pure and gold-coated VO2 thin films on quartz substrate

In the present study, vanadium dioxide films were grown on quartz glass substrate by reactive KrF laser ablation technique using a vanadium dioxide target. The gold films of various thicknesses were then deposited on the VO₂ film by sputtering technique. Films were characterized by X-ray diffraction to determine crystallography, by four-point probe to determine the electrical property and by double-beam spectrophotometry to determine optical reflection and transmission behaviour in the 200–2500 nm spectral region. The resistance per square of VO₂ thin film decreases by two orders of magnitude across the metal insulator transition (MIT). The optical transmittance and reflectance exhibits, strong temperature dependence in the infrared region without a significant change in the visible region for VO₂ thin films. The presence of gold layer on VO₂ films significantly reduces the resistance per square, the critical temperature and percentage transmittance of the materials.