Quantum structures for multiband photon detection

The work describes multiband photon detectors based on semiconductor micro-and nano-structures. The devices considered include quantum dot, homojunction, and heterojunction structures. In the quantum dot structures, transitions are from one state to another, while free carrier absorption and internal photoemission play the dominant role in homo or heterojunction detectors. Quantum dots-in-a-well (DWELL) detectors can tailor the response wavelength by varying the size of the well. A tunnelling quantum dot infrared photodetector (T-QDIP) could operate at room temperature by blocking the dark current except in the case of resonance. Photoexcited carriers are selectively collected from InGaAs quantum dots by resonant tunnelling, while the dark current is blocked by AlGaAs/InGaAs tunnelling barriers placed in the structure. A two-colour infrared detector with photoresponse peaks at ∼6 and ∼17 μm at room temperature will be discussed. A homojunction or heterojunction interfacial workfunction internal photoemission (HIWIP or HEIWIP) infrared detector, formed by a doped emitter layer, and an intrinsic layer acting as the barrier followed by another highly doped contact layer, can detect near infrared (NIR) photons due to interband transitions and mid/far infrared (MIR/FIR) radiation due to intraband transitions. The threshold wavelength of the interband response depends on the band gap of the barrier material, and the MIR/FIR response due to intraband transitions can be tailored by adjusting the band offset between the emitter and the barrier. GaAs/AlGaAs will provide NIR and MIR/FIR dual band response, and with GaN/AlGaN structures the detection capability can be extended into the ultraviolet region. These detectors are useful in numerous applications such as environmental monitoring, medical diagnosis, battlefield-imaging, space astronomy applications, mine detection, and remote-sensing. The paper presented there appears in Infrared Photoelectronics, edited by Antoni Rogalski, Eustace L. Dereniak, Fiodor F. Sizov, Proc. SPIE Vol. 5957, 59570W (2005).     

Superconductivity in boron carbide? Clarification by low-temperature MIR/FIR spectra

The electronic structure and phonon density of B(13)B(2) boron carbide calculated by Calandra et al (2004 Phys. Rev. B 69 224505) defines this compound as metallic, and the authors predict superconductivity with T(C)s up to 36.7 K. Their results are affected by the same deficiencies as former band structure calculations on boron carbides based on hypothetical crystal structures deviating significantly from the real ones. We present optical mid IR/far IR (MIR/FIR) spectra of boron carbide with compositions between B(4.3)C and B(10.37)C, evidencing semiconducting behaviour at least down to 30 K. There is no indication of superconductivity. The spectra yield new information on numerous localized gap states close to the valence band edge.     

Observation of out-of-phase bilayer plasmons in YBa(2)Cu(3)O(7-delta)

The temperature dependence of the c-axis optical conductivity sigma(omega) of optimally and overdoped YBa2Cu3Ox ( x = 6.93 and 7) is reported in the far- (FIR) and midinfrared (MIR) range. Below T(c) we observe a transfer of spectral weight from the FIR not only to the condensate at omega = 0, but also to a new peak in the MIR. This peak is naturally explained as a transverse out-of-phase bilayer plasmon by a model for sigma(omega) which takes the layered crystal structure into account. With decreasing doping the plasmon shifts to lower frequencies and can be identified with the surprising and so far not understood FIR feature reported in underdoped bilayer cuprates.     

Infrared detection and photon energy up-conversion in graphene layer infrared photodetectors integrated with LEDs based on van der Waals heterostructures: Concept,device model,and characteristics

We propose the concept of the infrared detection and photon energy up-conversion in the devices using the integration of the graphene layer infrared detectors (GLIPs) and the light emitting diodes (LEDs) based on van der Waals (vdW) heterostructures. Using the developed device model of the GLIP-LEDs, we calculate their characteristics. The GLIP-LED devices can operate as the detectors of far- and mid infrared radiation (FIR and MIR) with an electrical output or with near-infrared radiation (NIR) or visible radiation (VIR) output. In the latter case, GLIP-LED devices function as the photon energy up-converters of FIR and MIR to NIR or VIR. The operation of GLIP-LED devices is associated with the injection of the electron photocurrent produced due to the interband absorption of the FIR/MIR photons in the GLIP part into the LED emitting NIR/VIR photons. We calculate the GLIP-LED responsivity and up-conversion efficiency as functions the structure parameters and the energies of the incident FIR/MIR photons and the output NIR/VIR photons. The advantages of the GLs in the vdW heterostructures (relatively high photoexcitation rate from and low capture efficiency into GLs) combined with the reabsorption of a fraction of the NIR/FIR photon flux in the GLIP (which can enable an effective photonic feedback) result in the elevated GLIP-LED device responsivity and up-conversion efficiency. The positive optical feedback from the LED section of the device lead to increasing current injection enabling the appearance of the S-type current-voltage characteristic with a greatly enhanced responsivity near the switching point and current filamentation.     

中远红外非线性光学晶体研究进展

3—5μm和8—12μm波段中远红外激光,在国防和民用领域均具有广泛的应用,作为全固态激光频率转换系统的核心部件,非线性光学晶体需要不断地优化和发展.本文从红外非线性光学晶体材料组成角度出发,总结了几种具有重大应用前景的磷族化合物(ZnGeP_2,CdSiP_2)、硫属化合物(CdSe, GaSe, LiInS_2系列,BaGa_4S_7系列)以及准位相匹配晶体(OP-GaAs, OP-GaP)等中远红外波段非线性光学晶体的研究进展.     

Performance improvements of ultraviolet/infrared dual-band detectors

Results are reported on dual-band detectors based on a GaN/AlGaN structure operating in both the ultraviolet–midinfrared (UV–MIR) and ultraviolet–farinfrared (UV–FIR) regions. The UV detection is due to an interband process, while the MIR/FIR detection is from free carrier absorption in the emitter/contact followed by internal photoemission over the barrier at the GaN/AlGaN interface. The UV detection, which was observed from 300 K to 4.2 K, has a threshold of 360 nm with a peak responsivity of 0.6 mA/W at 300 K. The detector shows a free carrier IR response in the 3–7 μm range up to 120 K, and an impurity response around 54 μm up to 30 K. A response in the range 7–13 μm, which is tentatively assigned to transitions from C impurities and N vacancies in the barrier region, was also observed. It should also be possible to develop a detector operating in the UV–visible–IR regions by choosing the appropriate material system. A dual-band detector design, which allows not only to measure the two components of the photocurrent generated by UV and IR radiation simultaneously but also to optimize the UV and IR responses independently, is proposed.     

The effect of mid-infrared and far-infrared emission,generated at NH3 excitation by intense radiation of a TEA CO2 laser,on ammonia absorption

The effect of Mid-InfraRed (MIR) ( 12 m) and Far-InfraRed (FIR) ( 100 m) emission from excited ammonia on the absorption of intense radiation of a TEA CO₂ laser has been studied experimentally under collisional and collisionless excitation conditions with ammonia pressures from 0.5 to 0.03 Torr. The energy of MIR and FIR emission was studied as a function of NH₃ pressure and laser energy fluence. Particular emphasis was given to the kinetics of MIR and FIR emission generation at different NH₃ pressures and to the measurement of the time delay of re-emitted pulses relative to the exciting CO₂ laser pulse. It has been found that the re-emission in the MIR range is highly collisional in nature. The intensity of MIR emission drops sharply (asp ³) with decreasing NH₃ pressure and its delay time relative to the exciting laser pulse increases. At the same time, re-emission in the FIR range (in the case of resonant excitation of NH3 at the 9R (30) line of CO₂ laser) is observed during an exciting pulse up top < 0.03 Torr. When binding the rotational sub-levels of a molecule with transitions, FIR emission acts as rotational relaxation and thus leads to an increase in NH₃ IR absorption even at collisionless excitation.     

Dual-band pixelless upconversion imaging devices

We have proposed a type of mid-infrared (MIR) and far-infrared (FIR) dual-band imaging device, which employs the photon frequency upconversion concept in a GaN/AlGaN MIR and FIR dual-band detector integrated with a GaN/AlGaN violet light emitting diode. On the basis of the photoresponse of single-period GaN/AlGaN dual-band detectors, we present the detailed optimization of multiperiod GaN emitter/AlGaN barrier detectors and their applications to dual-band pixelless upconversion imaging. Satisfying images have been received through the analysis of the modulation transfer function and the upconversion efficiency in the GaN/AlGaN dual-band pixelless upconverters, which exhibit good image resolution, high quantum efficiency, and negligible cross talk.     

Evidence of four-wave parametric interaction in optically pumped NH3

This paper reports the first evidence of a near-resonant four-wave parametric interaction in gaseous ammonia using a single-pass NH₃ cell pumped by a 9R16 CO₂ TEA laser. Experimental signatures of these processes are clearly revealed by an accurate time-history of the FIR/MIR emission and by detuning measurements. A theoretical model is used to identify the relevant mechanisms responsible for each emission and confirms that both the 12.2 μm and 12.08 μm lines are produced by a four-wave parametric interaction involving the pump and two FIR lines.     

Focusing effects in nonlinear resonant four-wave mixing (RFWM) MIR and FIR generation

Summary The influence of pump beam geometry in a NH₃ superradiant Raman FIR laser with RFWM generation of MIR emission has been analysed. We have observed that, in general, MIR radiation is emitted in a stimulated configuration, so pump and MIR beam overlap is basically important to exhibit an efficient RFWM. In particular, strong focusing, also in the presence of self-focusing, shows a lowering of the threshold of Raman FIR emission, as expected, plus a reduction of RFWM MIR emission. COMB-Arrich., CRE Frascati.     

Pure MW Raman laser emission in superradiant mode in ammonia by pumping with 9P20 CO2 laser line

In this work, clear FIR Raman emission in ammonia was observed when a 9P20 CO₂ line was used as a pump. We have noted an intense pump depletion and strong superradiant FIR and MIR emissions. The time history of these radiations has also been recorded. The intense MIR radiation is a new line observed in the ammonia laser.     

无杂质空位扩散法造成InGaAsP/InP多量子阱结构带隙蓝移规律的研究

采用光荧光谱(PL)和光调制反射谱(PR)的方法,研究了由Si₃N₄、SiO₂电介质盖层引起的无杂质空位(IFVD)诱导的InGaAsP四元化合物半导体多量子阱(MQWs)结构的带隙蓝移。实验中Si₃N₄、SiO₂作为电介质盖层,用来产生空位,再经过快速热退火处理(RTA)。实验结果表明:多量子阱结构带隙蓝移和退火温度、复合盖层的组合有关。带隙蓝移随退火温度的升高而加大。InP、Si₃N₄复合盖层产生的带隙蓝移量大于InP、SiO₂复合盖层。而InGaAs、SiO₂复合盖层产生的带隙蓝移量则大于InGaAs、Si₃N₄复合盖层。同时,光调制反射谱的测试结果与光荧光测试的结果基本一致,因此,PR谱是用于测试带隙变化的另一种方法。     

Research on a middle infrared and long infrared dual-band laser

We propose a continuous-wave(CW)middle infrared(MIR)and long infrared(LIR)dual-band laser for the calibration and effect research of infrared detecting and imaging systems.A total output power of 18 W is achieved by the proposed dual-band laser through one DF gain medium module and one parallel placed CO2 gain medium module using a common stable resonator and output mirror with nominal transmissivities of ～5%in the MIR band and～10%in the LIR band.Spectra of dual-band laser are acquired.The power extracting efficiency of this dual-band laser can be significantly improved,as validated by a single-band test of optimized parameters.     

Intersubband absorption in highly photoexcited semiconductor quantum wells

Transient mid infrared (MIR) absorption spectroscopy is used to investigate transitions between higher electronic subbands in semiconductor quantum well (QW) structures after interband photoexcitation with intense picosecond pulses in the visible spectral range. Our investigation focuses on the e₂–e₃ intersubband transition in an asymmetric undoped GaAs/AlGaAs QW structure. At an injected nonequilibrium carrier density of 1×10¹³ cm⁻²/QW, an e₂–e₃ absorption band at 99 meV with a spectral width of 5 meV is found. For a higher density studied, 3×10¹³ cm⁻²/QW, the band is broadened and blueshifted by 30 meV. Intersubband absorption signals are distinguished from free-carrier absorption signals in the MIR by their characteristic time behavior.     

Free electron laser study of the suppression of non-radiative scattering processes in semiconductors

A brief review is given of pump–probe studies of far infrared inter-sub-level relaxation between conduction band states in doped `quasi' quantum dots (created by the application of a magnetic field along the growth direction of an InAs/AlSb quantum well) and of mid-infrared (MIR) interband recombination in narrow gap semiconductors, using the free electron laser at FOM-Rijnhuizen (FELIX). In the former case, the longitudinal optic (LO) phonon scattering rate is shown to be suppressed by a factor of about 100 when the Landau level separation is off-resonance with the optical phonon energy; in the latter case, Auger recombination is shown to be substantially suppressed in the lead salts due to their `mirror' energy band structure.     

Low-temperature,small-sample reflectivity measurements in a commercial rapid-scan Michelson interferometer

Details are given of an apparatus that has been built to measure the reflectivity of small single crystals over a broad frequency range, between 10 and 300 K, using a Bruker IFS 113V rapid-scan Fourier-transform interferometer. A small reproducible translational movement interchanges the sample and reference mirror under vacuum. The sample and reference signal are optimized by external adjustments, including the introduction of a chopper into the beam.An example is given of the signal to noise ratio obtained in the FIR spectral region along with FIR and MIR reflectivity results for a small organic crystal.     

Optically-pumped pulsed laser action in isotopically-substituted DCN

Pulsed MIR and FIR laser action is reported from D^12,13C^14,15N pumped by a 9 μm region TEA CO₂ laser. Thirty-four wavelengths and assignments are reported, spanning 18.1–477 μm. Output energies from D¹³C¹⁵N at 392 μm pumped by CO₂ 9R(32) are up to a factor of two larger than those from D₂O pumped by 9R(22), one of the strongest known pulsed FIR lasers.     

Assignments and predictions of far-infrared laser lines in methyl alcohol

In this work, the results of detailed spectroscopic analyses of the high-resolution Fourier transform infrared (IR) C-O stretch and far-infrared (FIR) torsion-rotation bands of methyl alcohol are applied to assign and predict FIR laser lines optically pumped by a CO₂ laser in the dense Q-branch region of the C-O stretch band. The assignments are supported by means of closed combination loops of accurately measured transition frequencies. For the predicted FIR lines, the frequencies are deduced with an accuracy of ±0.001 cm⁻¹, which is at least an order of magnitude better than can be obtained from direct wavelength measurements. The IR and FIR spectroscopic data relevant to the assignments are included.     

Spectra of optically pumped superradiant and cavity NH3 far-infrared laser

Based on the density matrix theory of quantum system, the spectra of optically pumped superradiant and cavity NH₃ far-infrared (FIR) lasers were calculated by means of iteration method. The calculation showed that, compared with the optically pumped superradiant FIR laser, the cavity laser had a wider band spectrum of FIR emission and a higher output power under certain condition, moreover, the spectra of cavity laser had multi longitudinal-mode structure. Supported by the Research Foundation of Hubei Province Education Committee, PRC     

Normal incidence silicon doped p-type GaAs/AlGaAs quantum-well infrared photodetector on (1 1 1)A substrate

p-type quantum-well infrared photodetectors (QWIPs) demonstrate normal incidence response due to band mixing by utilizing valence band transitions that may break the selection rule limiting n-type QWIPs. Due to even more complicated valence band structure in (1 1 1) orientation, it is interesting to see that the p-type QWIP show both absorption and photocurrent response dominant in normal incidence. The p-type GaAs/AlGaAs QWIP was fabricated on GaAs(1 1 1)A substrate by molecular beam epitaxy (MBE) using silicon as dopant with a measured carrier concentration of 1.4 × 10¹⁸ cm⁻³. The photocurrent spectrum exhibits a peak at a wavelength of 7 μm with a relatively broad peak width (Δλ/λ_p  50%), indicating that the final state is far deep within the continuum of the valence band. The p-QWIP demonstrates a responsivity of about 1 mA/W, which is limited by the relatively low doping concentration.