Effects of surface damage on critical current density in MgB2 thin films

We investigated the influence of surface damage on the critical current density (J_c) of MgB₂ thin films via 140-keV Co-ion irradiation. The J_c(H) of the surface-damaged MgB₂ films was remarkably improved in comparison with that of pristine films. The strong enhancement of J_c(H) caused by a surface damage in MgB₂ films can be ascribed to additional point defects along with an atomic lattice displacement introduced through low-energy Co-ion irradiation, which is consistent with the change in the pinning mechanism, from weak collective pinning to strong plastic pinning. The irreversible magnetic field (H_irr) at 5 K for surface-damaged MgB₂ films with a thickness of 850 and 1300 nm was increased by a factor of approximately 2 compared with that of a pristine film. These results show that the surface damage produced by low energy ion irradiation can serve as an effective pinning source to improve J_c(H) in a MgB₂ superconductor.     

Angular dependence of the critical current density and the temperature scaling of the flux pinning force in YBCO thin film

In this paper, the critical current J_c(Θ) have been investigated as a function of magnetic-field angle Θ. Θ is the angle between the c-axis and the applied magnetic field direction. This investigation concerned three temperature values (60?K, 78?K and 81?K). The normalized pinning force f_p versus the normalized magnetic field h was also studied (f_p?=?F_p / F_pmax and h?=?H / H_max). The F_p expression was determined based on the Kramer model.The studied sample was a single crystal of YBaCuO thin film deposited by the ablation laser method on the surface (100) of a SrTiO₃ substrate.The results of this work show the existence of point core pinning of the normal centers in the low field regime and the occurrence of the flux creep in high field regime.     

Angular dependences of critical current density in YBCO thin films with crossed columnar defects

We investigated the dependences of the critical current density J_c on the magnetic field angle θ in YBa₂Cu₃O_7−δ thin films with the crossed configurations of the columnar defects (CDs). To install the crossed CDs, the films were irradiated using the high energetic Xe ions at two angles relative to the c-axis. The additional peak around the c-axis appears in the J_c(θ) for all irradiated films. In lower magnetic fields, the height of the J_c(θ) peak caused by the crossed CDs with the crossing angles θ_i = ±10° was higher than that for the parallel CDs. It is considered that the correlation of the flux pinning by the crossed CDs along the c-axis occurs even in the case of θ_i = ±25°, which was also suggested by the kink behaviors of the scaling parameters of the current–voltage characteristics near 1/3 of the matching field. In higher magnetic fields, on the other hand, the height and width of the J_c(θ) peak for the crossed CD configurations rapidly reduce with increasing the magnetic field compared to the parallel ones. In the crossed CD configurations, the dispersion in the direction of CDs would prevent the correlation of flux pinning along the c-axis in high magnetic fields, which occurs in the parallel CD configurations due to the collective pinning of flux lines including the interstitial flux lines between the directly pinned flux lines by CDs.     

Bi2Sr2CaCu2O8掺杂MgB2的磁通钉扎特性

为了研究超导材料中高温超导相颗粒的钉扎行为，在Ar气保护条件下，采用固相反应法制备了质量百分比为0，3，5和10％BizSr2CaCu2O8含量的MgB2块状样品．用X射线衍射和扫描电子显微镜对样品进行了显微结构分析；用物理性能综合测试系统振动样品磁强计（最大磁场9T）测量了所有样品在不同磁场下的直流M（T）曲线，并测量了不同温度下的准静态磁化曲线，通过Bean临界态模型分析出Jc（H）曲线．随着掺杂量的增大掺杂后Tc基本不变，转变宽度略为增大；相比于未掺杂样品，掺杂量为3wt％样品抗磁信号和临界电流密度有较大提高．显微结构分析结果表明，部分Bi2Sr2CaCu2O8分解为Cu2O和其它杂相，有部分Bi2Sr2CaCu2O8颗粒保留在样品内部，成为有效的钉扎中心．最后本文对超导体中的高温超导相颗粒的钉扎行为进行了分析．     

高温超导薄膜临界电流密度的无损测量研究

临界电流密度Jc是超导薄膜的一个重要参量,它可以衡量超导薄膜的功率承载能力。大面积高温超导薄膜制成后,其Jc需要被无损精确测量。文中提出了一种新的交流磁场下的高温超导薄膜临界态模型:(1)基于此模型对薄膜的临界电流密度进行了精确无损测量;(2)并将实验测量的三次谐波电压曲线进行拟合研究。首先,根据麦克斯韦方程和伦敦方程,计算外加直流磁场超导薄膜Meissner态下电流和磁场在薄膜内的分布;然后分析薄膜进入临界态后内部电流的变化,在考虑顶扎力作用的情况下,提出了临界态电流和磁场非均匀分布模型;最后根据其模型,推导出三次谐波电压的表达式。为了验证该理论,分别对四片超导薄膜在不同频率下进行了三次谐波和临界电流密度测量。实验结果表明:三次谐波电压的理论与实验曲线一致;与四点传输法的测量结果相比较,该方法测量超导薄膜临界电流密度的误差在5%左右,具有高精度、无损伤、方便快捷等优点。     

Magnetic field dependence of critical current density in YBa2Cu3O7

We have measured the transport critical current densityJ _cof sintered YBa₂Cu₃O₇, in various applied fields up to 185 Oe at 77 K. We find a sharp decay ofJ _cwith magnetic field. We show that this sharp decay is consistent with the low field hysteresis results of Groveret al. We argue that the observed field dependence is not caused by intragranular weak links.     

MgB2超导膜的厚度与其Jc(5K,0T)的关系

通过混合物理化学气相沉积法 (hybrid physical-chemical vapor deposition, HPCVD), 在(000l) SiC 衬底上制得一系列从10 nm到8 μm的MgB₂超导膜样品, 并对它们的形貌、超导转变温度T_c 和临界电流密度J_c与膜厚度的关系进行了研究. 观察到T_c随膜厚度增加上升到最大值后, 尽管膜继续增厚, 但T_c值保持近乎平稳, 而J_c则先随膜厚度增加上升到最高值后, 继而则随膜的厚度的增加而下降. MgB₂膜的T_c(0)和T_c(onset)值与膜厚的关系基本一致, T_c(0)在膜厚为230 nm处达到最大值T_c(0)=41.4 K, 而J_c(5K,0T)在膜厚为100 nm时达到最大值, J_c (5 K, 0 T)=2.3×10⁸A·cm^-2, 这也说明了我们能用HPCVD方法制备出高质量干净MgB₂超导膜. 本文研究的超导膜厚度变化跨度非常大, 从10 nm级的超薄膜到100 nm级的薄膜, 再到几微米的厚膜, 如此T_c和J_c对膜厚度变化的依赖就有了较完整、成体系的研究. 并且本文的工作对MgB₂超导薄膜制备的厚度选取具有实际应用意义. 关键词： 2超导膜')" href="#">MgB₂超导膜 混合物理化学气相沉积法 厚度 临界电流密度     

高温超导电机电枢线圈临界电流密度研究

高温超导线材的临界电流密度受磁场的影响,在设计计算时,通常假设在线圈截面上电流密度是均匀分布的。但是,实际上在线圈截面上,电压是一致的。由于线圈中的磁场不均匀分布,各处的临界电流密度是不同的。采用数值模拟的方法,分析了高温超导线圈截面上的临界电流分布。结果显示,临界电流密度的分布是不均匀的,总的临界电流可比按均匀分布时的计算结果提高25%以上。     

Increased critical current density and pinning in thick Ag/YBa2Cu3O7−x multilayers

We have investigated the superconducting properties of Ag/YBa₂Cu₃O_7−x thick multilayers grown by Pulsed Laser Deposition, and found that the artificial pinning centres induced by Ag nanodots lead to a significant increase in critical current, especially in high applied magnetic fields. Transmission Electron Microscopy showed a columnar growth of YBa₂Cu₃O_7−x induced by Ag nanodots, while angle-dependent transport measurements revealed the existence of strong, both isotropic and c-axis correlated, artificial pinning centres.     

Enhancement of critical current density in Gd123 bulk superconductor doped with magnetic powder

We studied the materials processing to grow high performance magnet with doping of magnetic powder as candidature of pinning centers. The magnetic powder was doped into Gd123 matrix and grew into single domain bulk in air. With doping magnetic powder in Gd123 bulk superconductors, the flux pinning was enhanced and the underlying mechanism was discussed. The experimental results showed that suitable amount of magnetic powder inclusion can be effect as pinning center to enhance the J_c of the bulk both in low magnetic field and high magnetic field, which was different from the bulk doped with paramagnetic nano-scaled particles. The T_c of the bulk was suppressed obviously with the content of the magnetic powder increasing, form 93.0 K without doping decrease to 90.5 K with 0.12 wt.% doping. This is consistent with that the magnetic impurities generally suppress superconductivity. We report the detailed results from the viewpoint of practical application to increase the integrated flux trapped inside the bulk.     

The effect of interlayer coupling on critical current density in Bi2212 system

The dependences of critical current density J _c on the interlayer coupling strength and magnetic field in Bi2212 crystals were obtained by measuring the magnetic loop of the crystals with different interlayer coupling strengths. It was revealed that J _c decreases with the decrease in the interlayer coupling of the crystals. The relation of J _{c ∞ exp} (−H ^β) was also found in the crystals, and further analysis indicated that it was the result of Zeldov pinning potential model. __________ Translated from Chinese Journal of Low Temperature Physics, 2005, 27(1) (in Chinese)     

硬度和电负性对掺杂二硼化镁体系临界电流密度的影响

依据Slater过渡态计算法计算出的元素的硬度和电负性作为标度,通过对二硼化镁及掺杂二硼化镁超导体硬度和电负性的计算,研究了二硼化镁及掺杂二硼化镁超导体硬度和电负性与临界电流密度的关系,发现其具有较好的规律性。由此,提出用硬度均衡值ηcq和电负性的平均效应值cχq作为提高掺杂二硼化镁超导体临界电流密度的一个新依据,对今后二硼化镁超导电性的改善有很好的指导意义。     

Enhancement of the critical current density in YBCO/Ag composites

YBa₂Cu₃O_7 + xAg?(x = 0.0, ?5.0, ?15.0 and 20 wt%) composite samples have been prepared by the solid state reaction method. The changes in structure are confirmed from the X-ray diffraction analysis and SEM measurements. The critical current density is calculated using Bean's formula from the magnetization measurement. We find that the addition of silver in YBCO enhances the critical current density (?J_C) by a factor of nearly six (for 15% Ag) in comparison to pure YBCO. Enhancement of the pinning force (F_P) by a factor of ten is also reported. The enhancement in ?J_C is investigated over a wide range of magnetic fields. These significant changes in ?J_C and F_P are attributed to the presence of Ag particles as efficient artifical pinning centers in YBCO.     

Critical current densities and flux creep rate in Co-doped BaFe2As2 with columnar defects introduced by heavy-Ion irradiation

We report the formation of columnar defects in Co-doped BaFe₂As₂ single crystals with different heavy-ion irradiations. The formation of columnar defects by 200 MeV Au ion irradiation is confirmed by transmission electron microscopy and their density is about 40% of the irradiation dose. Magneto-optical imaging and bulk magnetization measurements reveal that the critical current density J_c is enhanced in the 200 MeV Au and 800 MeV Xe ion irradiated samples while J_c is unchanged in the 200 MeV Ni ion irradiated sample. We also find that vortex creep rates are strongly suppressed by the columnar defects. We compare the effect of heavy-ion irradiation into Co-doped BaFe₂As₂ and cuprate superconductors.     

Determination of the field dependence of the intergranular critical current in a YBCO tube by horizontal traversals

The magnetic flux density in the cavity of a sintered tube of Yttrium Barium Copper Oxide (YBCO) is measured as a function of H, the axial magnetic field impressed and removed after zero field cooling (ZFC). We note that, in a short thick-walled hollow cylinder of a weak-linked polycrystalline high-T_c superconductor, the magnetic field in the cavity of the tube, H_z hole, rises above the applied field H when it is initially increasing. Consequently the standard approach to determine the critical current density from an ascending sweep of H alone, or a descending sweep alone cannot be exploited. However the field dependence of the intergranular critical current density J_cm can be reliably obtained from the horizontal traversals of H_z hole vs H. Comparison of the experimental data with model calculations for the horizontal traversals of the hysteresis curves show that the intergranular critical current density in the YBCO tube has a Kim-like field dependence. The magnetization of the grains has a significant influence on the flux density in the cavity of the tube.     

平均价电子数与掺杂MgB2体系临界电流密度的关系

研究了掺杂二硼化镁超导体系的平均价电子数与临界电流密度之间的关系,发现它们之间有较好的规律性。由此,提出用平均价电子数作为提高掺杂二硼化镁超导体临界电流密度的一个新依据,对今后二硼化镁超导电性的改善有很好的指导意义。     

高压下 MgB2 超导的涡旋动力学研究*

我们首次通过磁弛豫的方法系统研究了高压下 MgB2 样品的磁通钉扎以及涡旋动力学, 测量了其在不同温度和磁场下的磁化强度 M 随时间t 的衰变, 即 M(t) . 根据集体蠕动理论, 明确了高压效应在低磁场时抑制了磁衰变速率, 但在高场下大大的加快了磁衰变. 高压降低了临界电流密度J c 和钉扎能. 另外, 在 MgB2 样品里低场下没有观测到弹性蠕变向塑性蠕变的转变.     

B4C in ex-situ spark plasma sintered MgB2

Powder mixtures of MgB₂ and B₄C with composition ((MgB₂) + (B₄C)_x, x = 0.005, 0.01, 0.03) were consolidated by Spark Plasma Sintering at 1150 °C for 3 min. The average particle size of B₄C raw powder was relatively high of 4 μm. Despite this, it is shown that processing processes are fast and, as in the case of the in-situ routes, for our ex-situ method carbon substitutes for the boron in the crystal lattice of MgB₂. Specifics of microstructure are discussed based on electron microscopy observations. Carbon substitution and microstructure contribute to enhancement of the critical current density J_c at high magnetic fields and of the irreversibility field H_irr. Samples are shown to be in the point pinning limit with some tendency toward the grain boundary pinning depending on B₄C doping amount and temperature. An optimum composition is found for x = 0.01: for this sample, at 20 K, a J_c of 100 A/cm² is obtained at 5.35 T. This value is higher than for the pristine MgB₂ sample and for an optimum ex-situ nano-SiC-doped sample obtained for the same SPS processing conditions.     

Surface versus bulk pinning in a HgBa2Ca2Cu3O8+x ceramics

Flux creep measurements on a HgBa₂Ca₂Cu₃O_8+x ceramics are reported. The results of the magnetic relaxation measurements are analyzed both by assuming that the pinning is due to the existence of a surface barrier or exclusively caused by bulk pinning. The action of both the surface and the bulk barriers is evidenced. At 70 K, a very high critical current density of the surface currents is determined, which is higher than the critical current density of the bulk. The field and temperature dependence of the pinning behaviour reflects mainly bulk pinning in 2D. The measurements were repeated after 4 and 12 months to investigate the influence of aging. A destruction of the superconducting properties of the grain boundaries accompanied by a degradation of the surfaces of the grains with time is proved.     

The distribution of transport critical current in high temperature superconductor ceramics

The temperature and size dependence of the transport critical current in Y-123 and Bi-2223 + Bi-2212 HTSC ceramic sample has been studied. It is shown that the critical current may be presented as power function of cross section area, the critical current density is homogeneous function of coordinates and a number of properties of the critical current density are reported.