Bonding configurations in amorphous carbon and nitrogenated carbon films synthesised by femtosecond laser deposition

The effect of nitrogen addition and laser fluence on the atomic structure of amorphous carbon films (a-C) synthesized by femtosecond pulsed laser deposition has been studied. The chemical bonding in the films was investigated by means of X-ray photoelectron (XPS) and Raman spectroscopies. XPS studies revealed a decrease in the sp³ bonded carbon sites and an associated increase in the N-sp²C bonding sites with increasing nitrogen content in the CN_x films. An increase in laser fluence from 0.36 to 1.7 J/cm² led to a rise in sp³C sites. These results were further confirmed by Raman spectroscopy. The I_D/I_G ratio increased monotonically and G line-width decreased with the increase of nitrogen content in the films indicating a rise in either the number or the size of the sp² clusters. Furthermore a visible excitation wavelength dependence study established the resonant Raman process in a-C and CN_x films. PACS 81.05.Uw; 81.15.Fg; 82.80     

Spectroscopic investigation of the physicochemical origin of the spontaneous delamination of the sputtered amorphous carbon nitride films

We present in this study a spectroscopic investigation of the delamination of the amorphous carbon nitride (a-CN_x) films deposited by RF magnetron sputtering of a graphite target in Ar/N₂ gas mixture. The microstructure of the studied films have been analysed prior and after their delamination. The origin of the observed spontaneous delamination have been elucidated in terms of chemical reactions between water and CN bonds at the a-CN_x/Si interface, which support delamination crack advance.     

Raman scattering spectroscopy of inclusions of carbon in Al<Subscript>2</Subscript>O<Subscript>3</Subscript> films and its solid solutions with HfO<Subscript>2</Subscript>

We apply Raman scattering spectroscopy to study the nature of carbon inclusions in Al₂O₃ and (HfO₂) _x (Al₂O₃)_{1 ? x} films deposited using volatile complex compounds. Raman spectra of the films under investigation contain D and G vibrational modes, which indicate that carbon clusters of the sp ² configuration tend to form in the films. We estimate the size of clusters from the integrated intensity ratio I _D /I _G and find it to be in the range of 14–20 Å. The content of hydrogen in carbon clusters is calculated from the height of the photoluminescence pedestal and is found to vary from 14 to 30 at % depending on the regime of the film’s synthesis.     

Effects of deposition temperature on the structure of amorphous carbon nitride films

Amorphous carbon nitride films (a-CN_x) were deposited on Si(100) under different rf power and at different substrate temperature T_S using rf magnetron sputtering of a high-purity graphite target in pure nitrogen. IR absorption, Raman spectra, and residual stress measurements are used to characterise the films in the as deposited state. The differences in the microstructure of the a-CN_x films is related to differences in the deposition mechanism. The T_S contribution can operate to increase the connectivity of the C-C network. The stress evolution is the result of the densification, i.e. a structural transformation within of the films that accompanies the nitrogen evolution, due to the C-N and C-C evolution when T_S is increased.     

Microstructure and tribological behavior of pulsed laser deposited a-CNx films

The a-CN_x films were deposited onto high-speed steel substrate by pulsed laser deposition at different nitrogen pressures. The tribological properties of the films in humid air and in vacuum were investigated using a ball-on-disk tribometer under various loads. The composition, microstructure and morphology of the films, wear tracks and paired balls were characterized by energy dispersive X-ray analysis (EDXA), X-ray photoelectron spectrum (XPS), Raman spectroscopy and scanning electron microscopy (SEM). With increasing the deposition pressure, the fraction of sp³ C bond reduces, the fraction of trapped nitrogen increases and the friction coefficient of the films declines both in humid air and vacuum. The friction coefficient of a-CN_x film decreases with increasing normal load. The tribological performances of the films in humid air are better than those of in vacuum. A transferred graphite-like tribo-layer is observed from a-CN_x film to the paired ball for both environments.     

Comparison and semiconductor properties of nitrogen doped carbon thin films grown by different techniques

Amorphous carbon nitride (a-CN_x) thin films have been synthesised by three different deposition techniques in an Ar/N₂ gas mixture and have been deposited by varying the percentage of nitrogen gas in the mixture (i.e. the N₂/Ar + N₂ ratio) from 0 to 10%. The variation of the electrical conductivity and the gap values of the deposited films versus the N₂/Ar + N₂ ratio were investigated in relation with their local microstructure. Film composition was analysed using Raman spectroscopy and optical transmission experiments. The observed variation of electrical conductivity and optical properties are attributed to the changes in the atomic bonding structures, which were induced by N incorporation, increasing both the sp² carbon content and their relative disorder. The low N content samples seem to be an interesting material to produce films with interesting properties for optoelectronic applications considering the facility to control the gas composition as a key parameter.     

Improving mechanical properties of a-CNx films by Ti-TiN/CNx gradient multilayer

Amorphous carbon nitride (a-CN_x) films with functional gradient Ti-TiN/CN_x underlayer were deposited by direct current magnetron sputtering. Microstructure and composition of the films were characterized by means of X-ray diffraction (XRD), Raman spectroscopy, atomic force microscope (AFM) and transmission electron microscopy (TEM). Mechanical and tribological properties were investigated by nanoindenter, scratch and ball-on-disk tribometer. The a-CN_x-based films suffer a graphitization process with the increasing deposition temperature, thus the hardness and elastic modulus decrease. With the design of the Ti-TiN/CN_x gradient underlayers, some important advantages of relatively thick CN_x films can be achieved, such as increased hardness, improved adhesion strength, and the wear resistance of the a-CN_x-based films can be also improved significantly.     

Properties of boron and phosphorous incorporated tetrahedral amorphous carbon films grown using filtered cathodic vacuum arc process

This paper reports the electrical, mechanical, structural and field emission properties of as grown and also boron and phosphorous incorporated tetrahedral amorphous carbon (ta-C) films, deposited using a filtered cathodic vacuum arc process. The effect of varying boron and phosphorous content (up to 2.0 at.% in to ta-C) on the conductivity (σ_D), activation energy (ΔE₁), hardness, microstructure, emission threshold (E_turn-ON) and emission current density (J) at 12.5 V/μm of ta-C: B and ta-C: P films deposited at a high negative substrate bias of −300 V are reported. It is observed that both boron and phosphorous incorporation leads to a nearly an order increase in σ_D and corresponding decrease in ΔE₁ and a slight increase in hardness as compared to as grown ta-C films. In the case of field assisted electron emission, it is observed that E_turn-ON increases and J decreases. The changes are attributed to the changes in the sp³/sp² ratio of the films due to boron and phosphorous incorporation. The effect of boron on ta-C is to give a p-type effect whereas the effect of phosphorous gives n-type doping effect.     

Low voltage electrodeposition of CNx films and study of the effect of the deposition voltage on bonding configurations

Carbon nitride (CN_x) films were deposited from acetonitrile at low voltage (150-450 V) through electrodeposition. The films were characterized by atomic force microscopy (AFM), Raman spectroscopy and Fourier transform infrared (FT-IR) spectroscopy. AFM investigations revealed that the grain size was ∼200 nm and roughness was ∼10 nm. The films were found to be continuous and close packed. IR spectra revealed existence of strong sp³, sp² type bonding and weak sp type carbon nitrogen bonds and these bonds were found to increase with voltage. The fraction of sp³-bonded species in the sample increased in low voltage range and after reaching maximum at 350 V, decreased for higher voltages. However, the concentration of sp² CN ring structures in the film increased with increasing voltage. Also, the peak width decreased at low voltages reaching a minimum and increased thereafter. It was observed that the voltage dependent increase in the concentration of polymeric type sp² CN (chain) structures was much more pronounced than that of graphitic type sp² CN (ring) structures. Raman spectra showed the presence of both the D and G bands. The shift in the G band indicated the presence of nitrogen in the film. The I_D/I_G ratio was found to increase with the incorporation of nitrogen. Auger electron spectroscopy (AES) showed a clear increase in the nitrogen content with increase in the voltage. The formation of the film could be explained on the basis of dissociation of electrolyte under applied voltage.     

Substrate temperature influence on the trombogenicity in amorphous carbon nitride thin coatings

Carbon nitride thin films were obtained through plasma assisted physical vapor deposition technique by pulsed arc, varying the substrate temperature and investigating the influence of this parameter on the films hemocompatibility. For obtaining approaches of blood compatibility, environmental scanning electron microscopy (ESEM) was used in order to study the platelets adherence and their morphology. Moreover, the elemental chemical composition was determined by using energy dispersive spectroscopy (EDS), finding C, N and O. The coatings hemocompatibility was evaluated by in vitro thrombogenicity test, whose results were correlated with the microstructure and roughness of the films obtained.During the films growth process, the substrate temperature was varied, obtaining coatings under different temperatures, room temperature (T_room), 100 °C, 150 °C and 200 °C. Parameters as interelectrodic distance, voltage, work pressure and number of discharges, were remained constant. By EDS, carbon and nitrogen were found in the films.Visible Raman spectroscopy was used, and it revealed an amorphous lattice, with graphitic process as the substrate temperature was increased. However, at a critical temperature of 150 °C, this tendency was broken, and the film became more amorphous. This film showed the lowest roughness, 2 ± 1 nm. This last characteristic favored the films hemocompatibility. Also, it was demonstrated that the blood compatibility of carbon nitride films obtained were affected by the I_D/I_G or sp³/sp² ratio and not by the absolute sp³ or sp² concentration.     

Nanomechanical characterization of amorphous hydrogenated carbon thin films

Amorphous hydrogenated carbon (a-C:H) thin films deposited on a silicon substrate under various mixtures of methane-hydrogen gas by electron cyclotron resonance microwave plasma chemical vapor deposition (ECR-MPCVD) was investigated. Microstructure, surface morphology and mechanical characterizations of the a-C:H films were analyzed using Raman spectroscopy, atomic force microscopy (AFM) and nanoindentation technique, respectively. The results indicated there was an increase of the hydrogen content, the ratio of the D-peak to the G-peak (I_D/I_G) increased but the surface roughness of the films was reduced. Both hardness and Young's modulus increased as the hydrogen content was increased. In addition, the contact stress-strain analysis is reported. The results confirmed that the mechanical properties of the amorphous hydrogenated carbon thin films improved using a higher H₂ content in the source gas.     

Electrochemical corrosion behaviors of a-C:H and a-C:NX:H films

The a-C:H and a-C:N_X:H films were deposited onto silicon wafers using radio frequency (rf) plasma enhanced chemical vapor deposition (PECVD) and pulsed-dc glow discharge plasma CVD, respectively. Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) were used to characterize chemical nature and bond types of the films. The results demonstrated that the a-C:H film prepared by rf-CVD (rf C:H) has lower I_D/I_G ratio, indicating smaller sp² cluster size in an amorphous carbon matrix. The nitrogen concentrations of 2.9 at.% and 7.9 at.% correspond to carbon nitride films prepared with rf and pulse power, respectively.Electrochemical corrosion performances of the carbon films were investigated by potentiodynamic polarization test. The electrolyte used in this work was a 0.89% NaCl solution. The corrosion test showed that the rf C:H film exhibited excellent anti-corrosion performance with a corrosion rate of 2 nA cm⁻², while the carbon nitride films prepared by rf technique and pulse technique showed a corrosion rate of 6 nA cm⁻² and 235 nA cm⁻², respectively. It is reasonable to conclude that the smaller sp² cluster size of rf C:H film restrained the electron transfer velocity and then avoids detriment from the exchange of electrons.     

Low energy repetitive miniature plasma focus device as high deposition rate facility for synthesis of DLC thin films

Diamond-like carbon (DLC) films were deposited on Si (1 0 0) substrate using a low energy (219 J) repetitive (1 Hz) miniature plasma focus device. DLC thin film samples were deposited using 10, 20, 50, 100 and 200 focus shots with hydrogen as filling gas at 0.25 mbar. The deposited samples were analyzed by XRD, Raman Spectroscopy, SEM and XPS. XRD results exhibited the diffraction peaks related to SiO₂, carbon and SiC. Raman studies verified the formation amorphous carbon with D and G peaks. Corresponding variation in the line width (FWHM) of the D and G positions along with change in intensity ratio (I_D/I_G) in DLC films was investigated as a function of number of deposition shots. XPS confirmed the formation sp² (graphite like) and sp³ (diamond like) carbon. The cross-sectional SEM images establish the 220 W repetitive miniature plasma focus device as the high deposition rate facility for DLC with average deposition rate of about 250 nm/min.     

Quality improvement of single-walled carbon nanotubes by doping B in Fe/MgO catalyst

We demonstrate that the quality of the as-grown single-walled carbon nanotubes (SWCNTs) can be effectively improved by the addition of the B ingredient in the Fe/MgO catalyst. The as-grown SWCNTs were characterized by scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM) and Raman spectroscopy. The SWCNTs prepared by the pure Fe/MgO catalyst have relatively low graphite crystallinity and are coated by much amorphous carbon. The intensity ratio of the D- and G-bands (I_D/I_G) in Raman spectra is relatively high (0.098 for laser 532 nm and 0.075 for laser 785 nm). The SWCNTs grown from the Fe/MgO catalyst doped with 0.1 part of B have more regular graphite structure with little amorphous carbon. The I_D/I_G values reduced remarkably (0.041 for laser 532 nm and 0.040 for laser 785 nm). The effect would be attributed to the inhibitory action of the doped B on the formation of radical hydrocarbon species for the formation of SWCNTs.     

Effects of gas composition on the growth of multi-walled carbon nanotube

This paper studies the effects of different gas compositions on the growth of multi-walled carbon nanotube (MWCNT) films by using an electron cyclotron resonance chemical vapor deposition (ECR-CVD) method. The Raman spectrum was employed to explore the composition of the MWCNT films grown under different mixtures of C₃H₈ and H₂. The results showed that the optimum relative intensity ratio of the D band to G band (i.e., I_D/I_G) is 2 for the cases considered in this study. In addition, the morphology and microstructure of the MWCNTs were examined by field emission scanning electron microscopy (FE-SEM) and field emission gun transmission electron microscopy (FEG-TEM). Furthermore, atomic force microscopy (AFM) and scanning thermal microscopy (SThM) were used to study the surface topography and thermal properties of the MWCNTs.     

Mössbauer spectroscopic study on polyacetylene doped with iodine

The ¹²⁹I Mössbauer effect has been applied to polyacetylene films of cis-(CHI_0.23)_x as prepared and cis-(CHI_0.20)_x led under dynamic evacuation. It has been clarified that both films contain linear I^?₅ and I^?₃ with symmetric charge population and that the fraction of I^?₃ increases after evacuation. The mechanism of electrical conductivity in iodine-doped polyacetylene has been discussed on the basis of the chemical form and the dynamic behavior of the anion species.     

Structure-property and composition-property relationships for poly(ethylene terephthalate) surfaces modified by helium plasma-based ion implantation

The surfaces of untreated and helium plasma-based ion implantation (He PBII) treated poly(ethylene terephthalate) (PET) samples were characterised by reflectance colorimetry, contact angle studies and measurements of surface electrical resistance. The results were related to the structural and compositional data obtained by the authors earlier on parallel samples by XPS and Raman spectroscopy. Inverse correlations between lightness and I_D/I_G ratio and between chroma and I_D/I_G ratio were obtained, suggesting that the PBII-treated PET samples darken and their colourfulness decreases with the increase of the portion of aromatic sp² carbon rings in the chemical structure of the modified layer. Direct correlation between water contact angle and the I_D/I_G ratio and inverse correlations between surface energy and I_D/I_G ratio and between dispersive component of surface energy and I_D/I_G ratio were found, reflecting that surface wettability, surface energy and its dispersive component decrease with the formation of surface structure, characterised again by enhanced portion of aromatic sp² carbon rings. The surface electrical resistance decreased with the increase of the surface C-content determined by XPS and also with the increase of the surface concentration of conjugated double bonds, reflected by the increase of the π → π* shake-up satellite of the C 1s peak.     

Higher order field equations II; Limit properties of green's functions

In a previous paper wave propagation was studied according to a sixth-order partial differential equation involving a complex mass M. The corresponding Yang-Feldman integral equations (indicated as SM-YF-equations), were formulated using modified Green's functions G^M_R(x) and G^M_A(x), which then incorporate the partial differential equation together with certain boundary conditions. In this paper certain limit properties of these modified Green's functions are derived: (a) It is shown that for |M| → ∞ the Green's functions G^M_R(x) and G^M_A(x) approach the Green's functions Δ_R(x) and Δ_A(x) of the corresponding KG-equation (Klein-Gordon equation). (b) It is further shown that the asymptotic behaviour of G^M_A(x) and G^M_A(x) is the same as of Δ_R(x) and Δ_A(x) - and also the same as for D_R(x) and D_A(x) for t→ ± ∞, where D_R and D_A are the Green n's functions for the KG-equation with mass zero. It is essential to take limits in the sense of distribution theory in both cases (a) and (b). The property (b) indicates that the wave propagation properties of the SM-YF-equations, the KG-equation with finite mass and the KG-equation with mass zero are closely related in an asymptotic sense.     

Enhanced infrared to visible upconversion emission in Er3+ doped phosphate glass: Role of silver nanoparticles

Phosphate glasses with compositions (59.5–x)P₂O₅–MgO–xAgCl–0.5Er₂O₃ (0.0≤x≤1.5 mol%) containing fixed concentration of Er³⁺ ion with and without silver nanoparticles (NPs) are prepared using melt quenching technique. The amorphous nature of the glass is confirmed using the X-ray diffraction method. The homogeneous distribution of spherical Ag NPs (average size ～37 nm) in the glassy matrix is evidenced from the transmission electron microscopy (TEM) analyses. The UV–vis–NIR absorption spectra shows 10 bands corresponding to ⁴I_13/2, ⁴I_11/2, ⁴I_9/2, ⁴F_9/2, ⁴S_3/2, ²H_11/2, ⁴F_7/2, ⁴F_5/2, ²G_9/2, ⁴G_11/2 transitions in which the most intense bands are ²H_11/2 and ⁴G_11/2. The absorption spectrum of Er³⁺ ions free glass sample containing Ag NPs displays a prominent surface Plasmon resonance (SPR) band located at 528 nm. The infrared to visible frequency upconversion (UC) emission under 797 nm excitation shows two emission bands green (⁴S_3/2–⁴I_15/2) and red (⁴F_9/2–⁴I_15/2) centered at 540 nm and 634 nm, respectively, corresponding to Er³⁺ transitions. An enhancement in UC emission intensity of green band (⁴S_3/2–⁴I_15/2) is observed in the presence of silver NPs and the maximum enhancement occurred for 1.5 mol% AgCl. However, the enhancement of emission intensity of the red band (⁴F_9/2–⁴I_15/2) is smaller. The enhancement of UC emission is understood in terms of the intensified local field effect due to silver NPs.     

Substrate effects on the microstructure of hydrogenated amorphous carbon films

In this work, plasma enhanced chemical vapour deposition was used to prepare hydrogenated amorphous carbon films (a-C:H) on different substrates over a wide range of thickness. In order to observe clear substrate effect the films were produced under identical growth conditions. Raman and near edge X-ray absorption fine structure (NEXAFS) spectroscopies were employed to probe the chemical bonding of the films. For the films deposited on silicon substrates, the Raman I_D/I_G ratio and G-peak positions were constant for most thickness. For metallic and polymeric substrates, these parameters increased with film thickness, suggesting a change from a sp³-bonded hydrogenated structure to a more sp² network, NEXAFS results also indicate a higher sp² content of a-C:H films grown on metals than silicon. The metals, which are poor carbide precursors, gave carbon films with low adhesion, easily delaminated from the substrate. The delamination can be decreased/eliminated by deposition of a thin (∼10 nm) silicon layer on stainless steel substrates prior to a-C:H coatings. Additionally we noted the electrical resistivity decreased with thickness and higher dielectric breakdown strength for a-C:H on silicon substrate.