Improved performance of InGaZnO thin-film transistors with Ta2O5/Al2O3 stack deposited using pulsed laser deposition

Ta₂O₅/Al₂O₃ stacked thin film was fabricated as the gate dielectric for low-voltage-driven amorphous indium–gallium–zinc-oxide (IGZO) thin film transistors (TFTs). The Ta₂O₅/Al₂O₃ stacked thin film exhibits a combination of the advantages of Al₂O₃ and Ta₂O₅. The IGZO TFT with Ta₂O₅/Al₂O₃ stack exhibits good performance with large saturation mobility of 26.66 cm² V⁻¹ s⁻¹, high on/off current ratio of 8 × 10⁷, and an ultra-small subthreshold swing (SS) of 78 mV/decade. Such small SS value is even comparable with that of submicrometer single-crystalline Si MOSFET.     

Effect of alumina addition on the microstructure and grain boundary resistance of magnesia partially-stabilized zirconia

The electrical properties of 9 mol% MgO–ZrO₂ (Mg-PSZ) with 1 mol% Al₂O₃ and the mechanisms for electrical degradation were investigated using structural, morphological, and electrochemical analyses. The addition of Al₂O₃ caused an increase in both the monoclinic and the Mg-rich phases at the grain boundaries in the Mg-PSZ. Coarse grains larger than 20 μm and an intergranular layer composed of the Mg-rich phase were identified in a specimen sintered at 1600 °C. This specimen exhibited a minimum of ionic conductivity (4.98 × 10⁻⁴ S cm⁻¹ at 700 °C) due to the grain boundary resistance (245 Ω cm²), which dominated the overall resistance. A similar trend was observed over the entire temperature range (600–1500 °C). An intergranular siliceous impurity (SiO₂) was present in conjunction with the Mg-rich phase. This impurity and the Mg-rich phase acted as a barrier layer for oxygen ion diffusion. The presence of the intergranular phases (i.e. the monoclinic and Mg-rich phases) contributed to the degradation of the ionic conductivity in Mg-PSZ with an Al₂O₃ addition.     

The synthesis of polycrystalline H3O+β″βAl2O3 ceramics from conventional precursor NaKβ″/βAl2O3 powders

H₃O⁺β″Al₂O₃, H₃O⁺/βAl₂O₃ and H₃O⁺β″/βAl₂O₃ /ZrO₂ ceramics of equiaxed, fine-grained microstructure were prepared by conventional synthesis techniques, gas-phase and vapour-phase ion exchange to the potassium form and field-assisted ion exchange in dilute HCl vapour to the hydronium form. The bend strength of the polycrystalline H₃O⁺β″Al₂O₃ and H₃O⁺β″/βAl₂O₃ was > 200 MPa. The conductivity of H₃O⁺β″Al₂O₃, H₃O⁺β″/βAl₂O₃ ZrO₂ was 8×10⁻⁶, 2×10⁻⁶ and 9×10⁻⁷ (Ω cm)⁻¹, respectively, at 25°C. The materials were demonstrated to perform in steam electrolysis cells at 100°C.     

Synthesis and electrical transport properties of Lu2+xTi2−xO7−x/2 oxide-ion conductors

The Lu_2+xTi_2−xO_7−x/2 (x = 0; 0.052; 0.096; 0.286; 0.44; 0.63; 33.3–49 mol% Lu₂O₃) nanoceramics with partly disordered pyrochlore-type structure are prepared by sintering freeze-dried powders obtained by a co-precipitation technique with 1600 °C annealing. Similar to pyrochlore-like compositions in the zirconate system, some of the new titanates are good oxide-ion conductors in air. The new solid-state electrolytes have oxide-ion conductivity in the interval of 1.0 × 10^− 3 – 2.5 × 10^− 3 S/cm at 740 °C in air. This value of conductivity is comparable with that of ZrO₂/Y₂O₃ ceramics. The conductivity of Lu_2+xTi_2−xO_7−x/2 depends on the chemical composition. The highest ionic conductivity is exhibited by nearly stoichiometric Lu_2+xTi_2−xO_7−x/2 (x = 0.096; 35.5 mol% Lu₂O₃) material containing ∼ 4.8 at.% Lu_Ti anti-site defects.     

Swift ion irradiation effect on high-k ZrO2- and Al2O3-based MOS devices

This paper describes the heavy ion-induced effects on the electrical characteristics of reactively sputtered ZrO₂ and Al₂O₃ high-k gate oxides deposited in argon plus nitrogen containing plasma. Radiation-induced degradation of sputtered high-k dielectric ZrO₂/Si and Al₂O₃/Si interface was studied using 45?MeV Li³⁺ ions. The devices were irradiated with Li³⁺ ions at various fluences ranging from 5?×?10⁹ to 5?×?10¹²?ions/cm². Capacitance–voltage and current–voltage characteristics were used for electrical characterization. Shift in flat band voltage towards negative value was observed in devices after exposure to ion radiation. Post-deposition annealing effect on the electrical behavior of high-k/Si interface was also investigated. The annealed devices showed better electrical and reliability characteristics. Different device parameters such as flat band voltage, leakage current, interface defect density and oxide-trapped charge have been extracted.The surface morphology and roughness values for films deposited in nitrogen containing plasma before and after ion radiation are extracted from Atomic Force Microscopy.     

Polyphosphazene based composite polymer electrolytes

Composite salt-in-polymer electrolyte membranes were prepared from poly[(bis(2-methoxyethyl)amino)_1−x(n-propylamino)_x-phosphazene] (BMEAP) with dissolved LiCF₃SO₃ and dispersed Al₂O₃ nanoparticles (40 nm). Membranes with good mechanical stability were obtained. Low ionic conductivities were found in particle free membranes with maximum conductivities at 10 wt.% LiCF₃SO₃ ranging from 3.1 × 10^− 7 S/cm at 30 °C to 1.8 × 10^− 5 S/cm at 90 °C. For the composite membranes, addition of 2 wt.% Al₂O₃ nanoparticles leads to a steep increase of the conductivity by almost two orders of magnitude as compared to the homogeneous membranes. The highest room temperature conductivity for the investigated BMEAP–LiCF₃SO₃–Al₂O₃ composite systems was 10^− 5 S/cm.     

Mixed conductivity and electrocatalytic performance of SrFeO3-δ–SrAl2O4 composite membranes

Oxygen-ionic and electronic transport in dense (SrFe)_1−x(SrAl₂)_xO_z composites, consisting of strontium-deficient Sr(Fe,Al)O_3-δ and SrAl₂O₄ phases, is determined by the properties of perovskite-like solid solution. Increasing the content of SrAl₂O₄, with a total conductivity as low as 5 × 10^− 7 −  10^− 5 S × cm^− 1 at 973–1273 K in air, results in the gradual decrease of the partial conductivities, but also enables the suppression of thermal expansion. Compared to single-phase SrFe_1−xAl_xO_3-δ, (SrFe)_1−x(SrAl₂)_xO_z composites exhibit enhanced thermomechanical properties, while the oxygen permeability of these materials has similar values. The composite membranes exhibit stable performance under air/(H₂–H₂O–N₂) and air/(CH₄–He) gradients at 973–1173 K. The oxidation of dry methane by oxygen permeating through (SrFe)_0.7(SrAl₂)_0.3O_z results in dominant total oxidation, suggesting the necessity to incorporate a reforming catalyst into the ceramic reactors for natural gas conversion.     

Surface properties of palladium catalysts supported on ternary ZrO2–Al2O3–WOx oxides prepared by the sol–gel method: Study of the chemical state of the support

The surface properties of Pd and Pd–Pt catalysts supported on binary ZrO₂–WOx and ternary ZrO₂–Al₂O₃–WOx oxides prepared by the sol–gel method were studied. Special attention was paid to the study of the texture of the catalysts as well as the chemical state of tungstated zirconia and tungstated zirconia promoted with alumina in the palladium catalysts. The catalysts were tested in the isomerization of n-hexane and were characterized by N₂ physisorption, XRD, TPR, Raman spectroscopy, XPS and FT-IR of adsorbed pyridine. The catalysts had bimodal pore size distributions with mesopores in the range 55–70 Å and macropores of 1000 Å in diameter. The catalysts had a surface WOx coverage (4.4–6.0 W nm^?2) lower than that of the theoretical monolayer (7.0 W nm^?2). A lower acidity of the ternary ZrO₂–Al₂O₃–WOx oxide as compared to the binary ZrO₂–WOx oxide was found. Higher activity in the isomerisation of n-hexane was obtained in the Pd–Pt catalysts supported on ternary ZrAlW oxides prepared by sol–gel that is correlated with the coexistence on the surface of W⁴⁺ (WO₂) or W⁰ and W⁶⁺ (Al₂(WO₄)₃) species, ZrO₂ in the tetragonal phase and a high amount of ZrOx suboxides species in a low oxidation state (Zr³⁺ and Zr²⁺).     

Ionic and electronic conductivities,stability and thermal expansion of La10 − x(Si,Al)6O26 ± δ solid electrolytes

Apatite-type La_10 − xSi_6 − yAl_yO_{27 − 3x/2 − y/2} (x = 0–0.33; y = 0.5–1.5) exhibit predominant oxygen ionic conductivity in a wide range of oxygen partial pressures. The conductivity of silicates containing 26.50–26.75 oxygen atoms per formula unit is comparable to that of gadolinia-doped ceria at 770–870 K. The average thermal expansion coefficients are (8.7–10.8) × 10^− 6 K^− 1 at 373–1273 K. At temperatures above 1100 K, silicon oxide volatilization from the surface layers of apatite ceramics and a moderate degradation of the ionic transport with time are observed under reducing conditions, thus limiting the operation temperature of Si-containing solid electrolytes.     

Improving the dielectric constant of Al2O3 by cerium substitution for high-k MIM applications

Process compatible high-k dielectric thin films are one of the key solutions to develop high performance metal–insulator–metal (MIM) structures for future microelectronic devices. Engineered cerium–aluminate (Ce_xAl_2–xO₃) thin films were deposited on titanium nitride metal electrodes by electron-beam co-evaporation of ceria and alumina in a molecular beam deposition chamber. X-ray photoelectron spectroscopy clearly reveals that Ce cations can be stabilized in the 3+ valence state in Ce_xAl_2–xO₃ up to x = 0.7 by accommodation in the alumina host matrix. Higher Ce content was observed to result in cerium dioxide segregation in cerium aluminate matrix, probably due to the chemical tendency of Ce cations to exist rather in the 4+ than in the 3+ state. Electrical characterization of the X-ray amorphous Ce_0.7Al_1.3O₃ films reveals a dielectric constant value of about 11 and leakage current lower than 10^?4 A/cm². No parasitic low-k interface formation between the high-k Ce_0.7Al_1.3O₃ film and the TiN metal electrode is detected.     

Preparation of YBCO film for microwave filter using a hybrid route

Pure (0 0 l)-textured CeO₂ buffer layers were deposited on single crystal r-plane Al₂O₃ (1–102) substrate by a hybrid process which was combined with magnetron sputtering for the seed layer and metal–organic deposition for the subsequent layer. Strongly c-axis oriented YBCO films were deposited on the CeO₂ buffered r-cut Al₂O₃ (1–102) substrates. Atomic force microscope and scanning electronic microscopy results show that the prepared buffers and YBCO films are relatively dense and smooth. The critical current of the YBCO films exceeds 1.5 MA/cm² at 77 K with the superconducting transition temperature of 90 K. The surface resistivity is as below as 14 μΩ at 1 GHz frequency. The results demonstrate that the hybrid route is a very promising method to prepare YBCO films for microwave application, which can combine the sputtering advantage for preparing of highly c-axis oriented CeO₂ buffer layers and the advantages of metal–organic deposition with rapid processing, low cost and easy preparation of large-area YBCO films.     

High-efficient liquid exfoliation of 2D metal-organic framework using deep-eutectic solvents

The exfoliation of bulk two-dimensional metal–organic framework (MOF) into few-layered nanosheets has attracted much attention recently. In this work, an environmental-friendly route has been developed for layered-MOF (MAMS-1) delamination using deep eutectic solvent (DES), which is more sustainable and efficient alternative than conventional organic solvents for MOF nanosheet preparation. Under sonication condition, DES as solvents, the highest exfoliation rate of MAMS-1 is up to 70% with two host layers via poly(vinylpyrrolidone) (PVP) surfactant-assisted method. The presence of tert-butyl exteriors and the atomically thickness endow the MOF nanosheets stable suspension for at least one month. Due to the 2D structure and excellent stability, MAMS-1 nanosheet (MAMS-1-NS) was chosen as a good candidate to encapsulate Eu³⁺ cations. The obtained Eu³⁺@MAMS-1-NS acts as a multi-responsive luminescent sensor through fluorescence quenching, and can specifically recognize Fe³⁺ (LOD = 0.40 μM, K_SV = 1.05 × 10⁵ M^−l), Hg²⁺ (LOD = 0.038 μM, K_SV = 5.78 × 10⁶ M^−l), Cr₂O₇²⁻ (LOD = 0.33 μM, K_SV = 1.55 × 10⁵ M^−l) and MnO₄⁻ (LOD = 0.088 μM, K_SV = 4.49 × 10⁵ M^−l). Compared with bulk Eu³⁺@MAMS-1, the sensitivity of Eu³⁺@MAMS-1-NS is greatly improved owing to its ultrathin nanosheet morphology and highly accessible active sites on the surface.     

Influence of YSZ electrolyte thickness on the characteristics of plasma-sprayed cermet supported tubular SOFC

Novel Ni–Al₂O₃ cermet-supported tubular SOFC cell was fabricated by thermal spraying. Flame-sprayed Al₂O₃–Ni cermet coating played dual roles of a support tube and an anode current collector. Y₂O₃-stabilized ZrO₂ (YSZ) electrolyte was deposited by atmospheric plasma spraying (APS) to aim at reducing manufacturing cost. The gas tightness of APS YSZ coating was achieved by post-densification process. The influence of YSZ coating thickness on the performance of SOFC test cell was investigated in order to optimize YSZ thickness in terms of open circuit voltage of the cell and YSZ ohmic loss. It was found that the reduction of YSZ thickness from 100 μm to 40 μm led to the increase of the maximum output power density from 0.47 W/cm² to 0.76 W/cm² at 1000 °C. Using an APS 4.5YSZ coating of about 40 μm as the electrolyte, the test cell presented a maximum power output density of over 0.88 W/cm² at 1030 °C. The results indicate that SOFCs with thin YSZ electrolyte require more effective cathode and anode to improve performance.     

Ionic conductivity of brownmillerite-type calcium ferrite under oxidizing conditions

The thermogravimetric and Mössbauer spectroscopy studies showed that, at atmospheric oxygen pressure, the oxygen content in Ca₂Fe₂O₅ brownmillerite is very close to stoichiometric at 300–1270 K. The orthorhombic lattice of calcium ferrite undergoes a transition from primitive (space group Pnma) to body-centered (I2mb) at 950–1000 K, which is accompanied with decreasing thermal expansion coefficient (TEC) and increasing activation energy for the total conductivity, predominantly p-type electronic. The steady-state oxygen permeation through dense Ca₂Fe₂O₅ ceramics is limited by the bulk ionic conduction. The ion transference numbers in air vary in the range 0.002–0.007 at 1123–1273 K, increasing with temperature. Analysis of stereological factors, which may affect oxygen diffusivity, suggests a dominant role of the ion jumps along octahedral and, possibly, tetrahedral layers of the brownmillerite structure. The ionic conductivity of calcium ferrite is higher than that of Ca₂FeAlO_5+δ, but lower compared to the oxygen-deficient perovskite phases based on SrFeO_3−δ where the diffusion pathways form a three-dimensional network. The average TECs of Ca₂Fe₂O₅ ceramics, calculated from dilatometric data in air, are 13.1 × 10^− 6 K^− 1 at 370–950 K and 11.3 × 10^− 6 K^− 1 at 970–1270 K.     

Mesopore size dependence of the ionic diffusivity in alumina based composite lithium ionic conductors

Ordered-mesoporous Al₂O₃ was synthesized by a sol–gel method using neutral copolymer surfactants as structure-directing agents. The pore size was controlled over the 3–15 nm range by the use of various surfactants. Composites composed of the synthesized mesoporous Al₂O₃ and a lithium ion conductor (LiI) were prepared. The maximum dc electrical conductivity, 2.6 × 10^− 4 S cm^− 1 at 298 K, was observed for 50 LiI·50 Al₂O₃ composite with 4.2 nm average mesopore size, which was considerably higher than the previously reported LiI-alumina composites. A systematic dependence of conductivity upon pore size was observed, in which conductivity increased with decreasing pore size, except for samples with a pore size of 2.8 nm. The lithium ion diffusion coefficient determined by the ⁷Li pulsed field gradient nuclear magnetic resonance (PFG-NMR) showed excellent agreement with the measured conductivity calculated by the Nernst-Einstein equation. On the other hand, lithium migration activation energies obtained by quasielastic neutron scattering (QENS) and ⁷Li NMR spin-lattice relaxation time (T₁) were considerably smaller than those obtained from electrical conductivity and PFG-NMR. This could be explained by the ion migration mechanism in heterogeneous composites and a possible enhancement of conductivity in mesoscopically confined spaces.     

First principles study of the structure,electronic state and stability of AlnAsm− anions

Structural and electronic properties of semiconductor binary microclusters Al_nAs_m⁻ anions have been investigated using the B3LYP-DFT method in the ranges of n = 1,2 and m = 1–7. Full structural optimization, adiabatic electron affinities calculation and frequency analysis are performed with the basis of 6–311 + G(d). The charged-induced structural changes in these anions have been discussed. The strong As–As bond is also favored over Al–As bonds in the Al_nAs_m⁻ anions in comparison with corresponding neutral cluster. Among different AlAs_m⁻ and Al₂As_m⁻ (m = 1–7) anions, AlAs₄⁻ and Al₂As₃⁻ are most stable.     

Oxygen permeation characteristics of zirconia with surface modification

Yttria-stabilized zirconia (YSZ) can be used as an oxygen-permeating membrane at elevated temperature (> 1400 °C) due to its chemical and mechanical stability. It was previously shown that the oxygen transport through YSZ membrane in reducing oxygen partial pressure (P_O2) was highly influenced by the surface-exchange kinetics that can be improved by porous surface coating layers such as YSZ, GDC (Gd-doped ceria) or YSZ–GDC mixture [H.J. Park, G.M. Choi, J. Eur. Ceram. Soc. 25 (2005) 2577]. However, the increased oxygen flux was still lower than that estimated assuming bulk-diffusion limit and rapidly decreased with time due to the sintering of coating layers and the reaction between bulk YSZ and coating layers. In this study, the oxygen fluxes through YSZ with LaCrO₃, GDC + LaCrO₃ (bilayer), LaCrO₃ + 5 wt.% GDC (mixture), or LaCr_0.7Co_0.3O₃ coatings were measured under controlled P_O2 gradient (permeate-side P_O2: ∼ 3 × 10^− 12 atm, feed-side P_O2: 2 × 10^− 10–2 × 10^− 8 atm) at 1600 °C. The oxygen flux drastically increased with these coatings. The highest increase in oxygen flux was shown with GDC + LaCrO₃ (bilayer) coating and was maintained for a long time. The presence of highly catalytic Ce ions while maintaining porous structure in the coating layer may explain the observation. The prevention of formation of resistive layer due to ceria coating may also be partly responsible for the observation.     

Electrical conductivity and thermal expansion of the oxy-cuspidine Gd4Al2O9 substituted with Ca and Sr

The series of Gd_4 ? xM_xAl₂O_9 ? x/2 (M = Ca, Sr) with x = 0, 0.01, 0.05, 0.10 and 0.25 was prepared by the citrate complexation method. Both Gd_4 ? xCa_xAl₂O_9 ? x/2 and Gd_4 ? xSr_xAl₂O_9 ? x/2 show the monoclinic cuspidine structure with space group of P2₁/c up to 0.05–0.1 and 0.01–0.05 mol for Ca and Sr, respectively. Beyond the substitution limit of Gd₄Al₂O₉, GdAlO₃ and SrGd₂Al₂O₇ appear as additional phases. The highest electrical conductivity obtained at 900 °C yielded σ = 1.49 × 10^? 4 S/cm for Gd_3.95Ca_0.05Al₂O_8.98. In comparison, the conductivity of pure Gd₄Al₂O₉ was σ = 1.73 × 10^? 5 S/cm. The conductivities determined are in a similar range as those of other cuspidine materials investigated previously. The thermal expansion coefficient of Gd₄Al₂O₉ at 1000 °C was 7.4 × 10^? 6 K^? 1. The phase transition between 1100 and 1200 °C reported earlier changes with increasing substitution of Ca and Sr.     

Epitaxial growth of well-ordered ultra-thin Al2O3 film on NiAl (1 1 0) by a single-step oxidation

Well-ordered ultra-thin Al₂O₃ films were grown on NiAl (1 1 0) surface by exposing the sample at various oxygen absorption temperatures ranging from 570 to 1100 K at dose rates 6.6 × 10⁻⁵ and 6.6 × 10⁻⁶ Pa. From the results of low-energy electron diffraction (LEED), Auger electron spectrometer (AES) and X-ray photon spectroscopy (XPS) observations, it was revealed that oxidation mechanism above 770 K is different from well-known two-step process. At high temperature, oxidation and crystallization occurred simultaneously while in two-step process oxidation and crystallization occurred one after another. At high-temperature oxidation well-ordered crystalline oxide can be formed by a single-step without annealing. Well-ordered Al₂O₃ layer with thickness over 1 nm was obtained in oxygen absorption temperature 1070 K and a dose rate 6.6 × 10⁻⁶ Pa at 1200 L oxygen.     

High temperature protonic conduction in Sr-doped LaP3O9

Electrical conduction of Sr-doped LaP₃O₉ ([Sr]/{[La] + [Sr]} = 2–10 mol%) was investigated under 0.4–5 kPa of p(H₂O) and 0.01–100 kPa of p(O₂) or 0.3–3 kPa of p(H₂) at 573–973 K. Sr-doped LaP₃O₉ showed apparent H/D isotope effect on conductivity regardless of the Sr-doping level under both H₂O/O₂ oxidizing and H₂/H₂O reducing conditions at investigated temperatures. Conductivities of the material were almost independent of p(O₂) and p(H₂O). These results demonstrated that the Sr-doped LaP₃O₉ exhibited protonic conduction under wide ranges of p(O₂), p(H₂O) and temperature. The conductivity of the Sr-doped LaP₃O₉ increased with increasing Sr concentration up to its solubility limit, ca. 3 mol%, while the further Sr-doping slightly degraded the conductivity. These indicate that Sr²⁺ substitution for La³⁺ leads to proton dissolution into the material and induced protonic conduction. Conductivities of the 3 mol% Sr-doped sample were 2 × 10^- 6–5 × 10^− 4 S cm^− 1 at 573–973 K.