High-performance organic red-light-emitting device based on DCJTB and a new host material

An efficient red-light-emitting device using a new host material (DPF) and a red dopant (DCJTB) with a configuration of ITO/NPB (50 nm)/DCJTB:DPF (2%, 10 nm)/TPBI (30 nm)/LiF (0.5 nm)/Mg:Ag has been fabricated and investigated. The red OLED yields a brightness of 9270 cd/m² at 10 V, a maximum current efficiency of 4.2 cd/A and a maximum power efficiency of 3.9 lm/W. Using DPF as host material, the performance is much better than that of a prototypical Alq₃-based device, which has a maximum efficiency of 1.9 cd/A and 0.6 lm/W. The performance is even comparable with red OLEDs using an assist dopant or a cohost emitter system. Results of this work indicate that DPF is a promising host material for red OLEDs with high efficiency and simple device structure.     

All-in-one-type organic light-emitting diodes for color tuning using phosphor in glasses with Pb-free silicate powders

We demonstrate all-in-one-type organic light-emitting diodes (OLEDs) that are fabricated using a color converting plate as a substrate. The color converting plate is Pb-free phosphor-in-glass (PiG), which is prepared by mixing Y₃Al₅O₁₂:Ce³⁺ (YAG:Ce³⁺) and SiO₂–B₂O₃–RO (R = Ba, Zn) glass frit by sintering at 750 °C for 30 min. The maximum luminance, luminance efficiency, and power efficiency of blue OLEDs fabricated on commercial glass are measured as 10500 cd/m², 10.18 cd/A, and 2.95 lm/W, respectively. The Commission Internationale de l'Eclairge (CIE) coordinates of blue OLEDs is (0.167, 0.325). Our obtained results show that the luminance value decreased as the PiG thickness increased, and the glass to phosphor (GTP) ratio decreased. The OLED devices fabricated on the PiG substrate (GTP ratio = 9:1, thickness: 150 μm) showed a maximum luminance, luminance efficiency, and power efficiency of 7600 cd/m², 8.76 cd/A, and 2.85 lm/W, respectively. The CIE color coordinates changed to (0.286, 0.504) at 200 mA/cm². These results proved that color coordination can be easily adjusted by varying the GTP ratio and the thickness of the PiG.     

Analysis on the high luminous flux white light from GaN-based laser diode

We fabricated a phosphor-conversion white light using an InGaN laser diode that emits 445 nm and phosphor that emits in the yellow region when excited by the blue laser light. At 500 mA injection current the luminous flux and the luminous efficacy were 113 lm and 44 lm/W, respectively. The relationship of the luminous flux and the luminous efficacy of the white light with an injection current were discussed. Based on the evaluation method for luminous efficacy of light sources established by the Commission International de I’Eclairage (CIE) and the phosphor used in this experiment, a theoretical analysis of the experiment results and the maximum luminous efficacy of this white light fabrication method were also presented.     

Simple-structure white organic light emitting diodes with high color temperature

We present high color temperature white organic light emitting diodes with a simple p-i-n structure. A sky blue phosphorescent dopant of iridium(III) bis[4,6-(difluorophenyl)-pyridinato-N,C^2’] picolinate and a red phosphorescent dopant of bis(2-phenylquinoline)(acetylacetonate)iridium(III) in the emissive layers is employed to make high color temperature devices. Very stable color variation under ?0.02 until a 5000 cd/m² brightness value is realized by efficient carrier control in a multi stacked emitting layer of blue/red/blue colors. Maximum current and power efficiencies of 23.8 cd/A and 22.9 lm/W in forward direction are obtained. With balanced emissions from the two emitters, the white light emission with very high correlated color temperature of 7308 K as well as CIE coordinates of (0.30, 0.33) is achieved.     

Highly efficient and stable organic light-emitting diodes employing MoO3-doped perylene-3, 4, 9, 10-tetracarboxylic dianhydride as hole injection layer

We report highly efficient and stable organic light-emitting diodes (OLEDs) with MoO₃-doped perylene-3, 4, 9, 10-tetracarboxylic dianhydride (PTCDA) as hole injection layer (HIL). A green OLED with structure of ITO/20 wt% MoO₃: PTCDA/NPB/Alq₃/LiF/Al shows a long lifetime of 1012 h at the initial luminance of 2000 cd/m², which is 1.3 times more stable than that of the device with MoO₃ as HIL. The current efficiency of 4.7 cd/A and power efficiency of 3.7 lm/W at about 100 cd/m² have been obtained. The charge transfer complex between PTCDA and MoO₃ plays a decisive role in improving the performance of OLEDs.     

Effect of different spacers for performance enhancement on white organic light-emitting devices based on double emissive layers with homogeneous p-/n-type host

White organic light-emitting devices (WOLEDs) based on phosphorescent blue and yellow emitters were fabricated, while p-type di-(4-(N,N-ditolyl-amino)-phenyl)cyclohexane (TAPC) and n-type 2,2′,2″-(1,3,5-benzenetriyl)-tris(1-phenyl-1-H-benzimidazole) (TPBi) were separately utilized as a homogeneous host for both blue and yellow emissive layers (EMLs). Then, various spacers were inserted between the two EMLs for performance characterization. The results showed that for the TAPC-host devices, a device using 4,7-diphenyl-1,10-phenanthroline (Bphen) as the spacer had a maximum current efficiency (CE) of 11.3 cd/A, while stable white light emission with Commission Internationale del’Eclairage (CIE) coordinates of (0.394, 0.435) at a bias of 5 V was observed. Similarly, among the TPBi-host devices, a device using 4,4′-bis(carbazol-9-yl)biphenyl (CBP) as the spacer exhibited a maximum CE of 18.1 cd/A, accompanied by negligible color variation with the CIE coordinates of (0.284,0.333) at 5 V. For the double-EML devices, the improved device efficiency and color stability by introducing proper spacer was attributed to broadened recombination region and efficient energy transfer between the EMLs.     

Realization of high-performance blue organic light-emitting diodes using multi-emissive layers

High-performance blue organic light-emitting diodes （OLEDs） are developed. A concept of using multiple-emissive layer （EML） configuration is adopted. In this letter, bis（2-methyl-8-quinolinolate）-4- （phenylphenolato）A1 （BAlq） and 9,10-di（naphtha-2-yl）anthracene （ADN）, which serve n- and p-type EMLs, respectively, are used to evaluate and demonstrate the multi-EML concept for blue OLEDs. The thickness effect of individual EMLs and the number of EMLs, e.g., triple and quadruple EML components, on the power efficiency of blue OLEDs are systematically investigated. To illustrate the point, the total thickness of the emissive region in different blue OLEDs are kept contact at 30 nm for comparison. The power efficiency of blue OLEDs with a quadruple EML structure of BAlq/ADN/BAlq/ADN is about 40% higher than that of blue OLEDs having a single EML unit. The Commission Internationale deL＇eclairage color coordinates of multi-EML OLEDs have values that represent the average of blue emissions from individual EMLs of BAlq and ADN.     

Enhancement of Frster energy transfer from thermally activated delayed fluorophores layer to ultrathin phosphor layer for high color stability in non-doped hybrid white organic light-emitting devices

Fluorescence/phosphorescence hybrid white organic light-emitting devices(WOLEDs) based on double emitting layers(EMLs) with high color stability are fabricated.The simplified EMLs consist of a non-doped blue thermally activated delayed fluorescence(TADF) layer using 9,9-dimethyl-9,10-dihydroacridine-diphenylsulfone(DMAC-DPS) and an ultrathin non-doped yellow phosphorescence layer employing bis[2-(4-tertbutylphenyl)benzothiazolato-N,C2']iridium(acetylacetonate)((tbt)_2Ir(acac)).Two kinds of materials of 4,7-diphenyl-1,10-phenanthroline(Bphen) and 1,3,5-tris(2-Nphenylbenzimidazolyl) benzene(TPBi) are selected as the electron transporting layer(ETL),and the thickness of yellow EML is adjusted to optimize device performance.The device based on a 0.3-nm-thick yellow EML and Bphen exhibits high color stability with a slight Commission International de l'Eclairage(CIE) coordinates variation of(0.017,0.009) at a luminance ranging from 52 cd/m~2 to 6998 cd/m~2.The TPBi-based device yields a high efficiency with a maximum external quantum efficiency(EQE),current efficiency,and power efficiency of 10%,21.1 cd/A,and 21.3 lm/W,respectively.The ultrathin yellow EML suppresses hole trapping and short-radius Dexter energy transfer,so that Forster energy transfer(FRET)from DMAC-DPS to(tbt)_2Ir(acac) is dominant,which is beneficial to keep the color stable.The employment of TPBi with higher triplet excited state effectively alleviates the triplet exciton quenching by ETL to improve device efficiency.     

NaCl/Ca/Al as an efficient cathode in organic light-emitting devices

An efficient cathode NaCl/Ca/Al used to improve the performance of organic light-emitting devices (OLEDs) was reported. Standard N,N′-bis(1-naphthyl)-N,N′-diphenyl-1,1′ biphenyl 4,4′-dimaine (NPB)/tris-(8-hydroxyquinoline) aluminum (Alq₃) devices with NaCl/Ca/Al cathode showed dramatically enhanced electroluminescent (EL) efficiency. A power efficiency of 4.6 lm/W was obtained for OLEDs with 2 nm of NaCl and 10 nm of Ca, which is much higher than 2.0 lm/W, 3.1 lm/W, 2.1 lm/W and 3.6 lm/W in devices using, respectively, the LiF (1 nm)/Al, LiF (1 nm)/Ca (10 nm)/Al, Ca (10 nm)/Al and NaCl (2 nm)/Al cathodes. The investigation of the electron injection in electron-only devices indicates that the utilization of the NaCl/Ca/Al cathode substantially enhances the electron injection current, which in case of OLEDs leads to the improvement of the brightness and efficiency.     

Efficient white organic light-emitting diodes based on an orange iridium phosphorescent complex

Stable and efficient white light emission is obtained by mixing blue fluorescence and orange phosphorescence. The introduction of double exciton blocking layers brings about well confinement of both charge-carriers and excitons in the emission layer. By systematically adjusting blue fluorescent and orange phosphorescent emission layers thickness, carriers in emission zone are balanced, and electrically generated excitons can be efficiently utilized. One white device with power efficiency of 14.4 lm/W at 100 cd/m² has excellently stable spectra. The improvement of performance is attributed to efficient utilization of the excitons and more balance of charge-carriers in emission layer.     

Bright white light electroluminescent devices based on efficient management of singlet and triplet excitons

Efficient and bright white organic light-emitting devices (WOLEDs) based on phosphor sensitized fluorescence are improved by using an unusual device structure, in which phosphorescent emissive layer is sandwiched between two blue fluorescent doped ones. This architecture allows for resonant energy transfer from both the host singlet and triplet energy levels that minimizes exchange energy losses. Thus, a WOLED with a maximum luminous efficiency of 11.63 cd/A, a maximum power efficiency of 7.37 lm/W, a maximum luminance of 31,770 cd/m², and Commission Internationale de L’Eclairage coordinates of (0.34, 0.36) is achieved.     

Phosphorescent white organic light-emitting diodes with stable white color depending on luminance

We fabricated simple and color-stable phosphorescent white organic light-emitting diodes (OLEDs) without an interlayer using a single host of 1,3-bis(9-carbazolyl)benzene with iridium(III) bis[(4,6-difluorophenyl) pyridinato-N,C2’]picolinate and bis(1-phenylisoquinoline)(acetylacetonate) iridium(III) as blue and red phosphorescent emitters, respectively. The CIE 1931 color coordinate difference of the white OLEDs is (0.008, 0.007) when the luminance of the device is increased from approximately 265 cd/m² to 9156 cd/m², which is regarded as visually indistinguishable in practice. In addition, we also measured the decay time of excitons to investigate the emission mechanism in this device using transient photoluminescence and electroluminescence techniques.     

Synthesis and luminescence of Eu-doped alkaline-earth apatites for application in white LED

A series of Eu²⁺-doped alkaline-earth apatites (alkaline-earth=Ca, Sr and Ba) were synthesized by a solid state reaction method with excess chlorides, and the effect of the used excess chlorides on the luminescent property of the synthesized products was discussed. Photoluminescence measurements showed that Eu²⁺-doped calcium apatite exhibited intensely blue wide-band emission peaking at 457 nm under near UV excitation among the Eu²⁺-doped Ca, Sr and Ba apatites. Blue and white LEDs were successfully fabricated by pre-coating the calcium apatite phosphors onto ∼395 nm-emitting InGaN chips. The CIE coordinates, color temperature, luminous efficacy and rendering index value of the fabricated white LED are (0.3432, 0.3234), 4969 K, 8 lm/W and 80, respectively. The results indicate that the Eu²⁺-activated calcium apatite phosphor is a promising candidate as a blue component for fabrication of near UV-based white LEDs.     

Efficient red light phosphorescence emission in simple bi-layered structure organic devices with fluorescent host-phosphorescent guest system

Highly efficient red phosphorescent devices comprising a simple bi-layered structure using tris(1-phenylisoquinoline)iridium (Ir(piq)₃) doped in a narrow band-gap fluorescent host material, bis(10-hydroxybenzo [h] quinolinato)beryllium complex (Bebq₂) are reported. The driving voltage to reach 1000 cd/m² is 3.5 V in Bebq₂:Ir(piq)₃ red phosphorescent device. With a dopant concentration of as low as 4%, the current and power efficiency values of 8.41 cd/A and 7.34 lm/W are obtained in this PHOLEDs, respectively. External quantum efficiency (EQE) of 14.5% is noticed in this red phosphorescent device, promising to high brightness applications.     

Effect of dye dopants in poly(methylphenyl silane) light-emitting devices

To investigate the inter-molecular energy transfer between polysilane and dye dopants, poly(methylphenylsilane)(PMPS) was used as a host material and perylene as the blue dopant. The structure of the devices is indium–tin oxide (ITO)/PEDOT:PSS(30 nm)/PMPS:perylene(dye dopant 0.1–1.0 mol%)(60 nm)/Alq₃(20 nm)/LiF(0.5 nm)/Al(100 nm). Poly(3,4-ethylenedioxythiophene) (PEDOT):poly(4-styrenesulfonate) (PSS) is used as a buffer layer, tris(8-hydroxyquinoline)aluminum (Alq₃) as hole transporting layer, LiF as hole injection layer. The device shows a luminance 810 cd/m² at current density of 28 mA/cm², luminous efficiency of 0.14 lm/W. The external quantum efficiency (EQE) is about 0.5% and EQE increased up to 0.52% by doping with single wall carbon nanotubes (SWNT) into the emissive layer. We found an efficient inter-molecular energy transfer from polysilane to dye dopants. Furthermore, using the polysilane and energy-matched dye dopants enable to fabricate the electroluminescence devices through wet processes.     

有机电致发光中的电致激基复合物(英文)

获得了一种基于电致激基复合物的高效率白光有机电致发光器件,采用p-i-n结构,有效地降低了器件的工作电压。器件的最大亮度为9 050 cd/m2,最大功率效率为2.63 lm/W。随着电压的增加,器件的C IE色坐标一直处于白光区域。     

Solution-processed WOx hole injection layer for efficient fluorescent blue organic light-emitting diode

Solution-processed tungsten oxide (s-WO_x) interfacial layer for efficient hole injection in fluorescent blue organic light-emitting diode (OLED) is demonstrated. The OLED using 2-methyl-9,10-bis(naphthalen-2-yl)anthracene (MADN) as emitter shows luminous efficiency of 3.3 cd/A, power efficiency of 2.5 lm/W and external quantum efficiency of 4.6% with Commission Internationale d'Eclairage (CIE) color coordinates of (0.154, 0.102). Using MADN doped 1-4-di-[4-(N,N-diphenyl)amino]styryl-benzene as emitter, luminous efficiency of 10.8 cd/A, power efficiency of 6.4 lm/W and external quantum efficiency of 7.2% with CIE color coordinates of (0.167, 0.283) are achieved. Atomic force microscopy and X-ray photoelectron spectroscopy show that s-WO_x features superior film morphology and non-stoichiometry with slight oxygen deficiency. Current-voltage characteristics and impedance spectroscopy analysis indicate that s-WO_x behaves slightly enhanced hole injection and accordingly contributes to improved device performance in comparison with conventional vacuum thermal evaporation WO_x. Our results pave an alternative way for broadening WO_x application with solution process and advancing fluorescent blue OLEDs.     

Screen-printed white OLED based on polystyrene as a host polymer

We demonstrate the use of screen printing in the fabrication of single-layer organic-light-emitting devices (OLEDs). The organic layer is a single-layer of polystyrene, in which we incorporate rubrene for orange emission and α-NPD, DPVBi for blue emission. An appropriate mixing of the two colors produced white emission by incomplete Förster energy transfer. We showed the role of each constituent, α-NPD, DPVBi and rubrene in the emission characteristics of OLEDs. The turn-on voltage of screen-printed white OLEDs was about 10 V with maximum brightness and luminous efficiency up to 1300 cd/m² and 9 cd/A, respectively.     

空穴传输层掺杂SrF2的高效率蓝色磷光OLED器件

通过在OLED器件的空穴传输层中掺杂不同比例的SrF2制作出了高效率蓝色磷光OLED器件.这种器件能有效提高蓝色磷光OLED器件的空穴注入与传输特性,降低器件的的工作电压,提高流明效率(19.11m/W)、电流效率(26.9 cd/A)以及亮度(22 220 cd/m2),和未经掺杂的参比器件相比,分别提高了85.4％...     

Improvement of electroluminescent property of blue LED coated with highly luminescent yellow-emitting phosphors

White light-emitting diodes (WLEDs) were fabricated by combining InGaN-based blue light-emitting diodes (LEDs) with highly luminescent Tb₃Al₅O₁₂:Ce³⁺ (TAG:Ce), Y₃Al₅O₁₂:Ce³⁺ (YAG:Ce), and Sr₃SiO₅:Eu²⁺ (SS:Eu). The TAG:Ce-based WLED showed a color rendering index (R _a ) of 79 and a luminous efficiency (η _L ) of 34.1 lm/W at 20 mA. The YAG:Ce-based WLED and the SS:Eu-based WLED showed low R _a values of 75 and 57 but high luminous efficiency values of 38.9 and 41.3 lm/W at 20 mA, respectively. When a mixture of YAG:Ce and SS:Eu was coated on a blue LED and the resultant WLED operated at 20 mA, the WLED showed a highly bright white light similar to daylight (η _L =40.9 lm/W, color temperature T _c =5,716 K, and R _a =76). Moreover, the WLED showed stable color coordinates against a considerable variation of applied current.