An Ellipsometric Investigation of the Optical Properties of Ru<Subscript>2</Subscript>Ge<Subscript>3</Subscript> and Ru<Subscript>2</Subscript>Sn<Subscript>3</Subscript> Compounds

Ellipsometric investigations of the optical properties of Ru₂Ge₃ and Ru₂Sn₃ intermetallic compounds are carried out in the wavelength range from 0.22 to 15 μm. The nature of interband light absorption is analyzed based on a comparative analysis of the experimental and theoretical frequency dependences of an optical conductivity. The obtained results confirm the existence of energy gaps at the Fermi level in the electronic spectra of these materials predicted earlier by the band-structure calculations.     

Mechanisms of low-temperature high-frequency conductivity in systems with a dense array of Ge<Subscript>0.7</Subscript>Si<Subscript>0.3</Subscript> quantum dots in silicon

High-frequency (HF) conductivity in systems with a dense (with a density of n = 3 × 10¹¹ cm^?2) array of self-organized Ge_0.7Si_0.3 quantum dots in silicon with different boron concentrations n_B is determined by acoustic methods. The measurements of the absorption coefficient and the velocity of surface acoustic waves (SAWs) with frequencies of 30–300 MHz that interact with holes localized in quantum dots are carried out in magnetic fields of up to 18 T in the temperature interval from 1 to 20 K. Using one of the samples (n_B = 8.2 × 10¹¹ cm^?2), it is shown that, at temperatures T ≤ 4 K, the HF conductivity is realized by the hopping of holes between the states localized in different quantum dots and can be explained within a two-site model in the case of

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, where ω is the SAW frequency and τ₀ is the relaxation time of the populations of the sites (quantum dots). For T > 7 K, the HF conductivity has an activation character associated with the diffusion over the states at the mobility threshold. In the interval 4 K < T < 7 K, the HF conductivity is determined by a combination of the hopping and activation mechanisms. The contributions of these mechanisms are distinguished; it is found that the temperature dependence of the hopping HF conductivity approaches saturation at T* ≈ 4.5 K, which points to a τ₀ ≤ 1. A value of τ₀(T*) ≈ 5 × 10^?9 s is determined from the condition ωτ₀(T*) ≈ 1.

     

High-temperature heat capacity of stannates Pr<Subscript>2</Subscript>Sn<Subscript>2</Subscript>O<Subscript>7</Subscript> and Nd<Subscript>2</Subscript>Sn<Subscript>2</Subscript>O<Subscript>7</Subscript>

Oxide compounds Pr₂Sn₂O₇ and Nd₂Sn₂O₇ have been obtained by solid-phase synthesis. The effect of temperature on the heat capacity of Pr₂Sn₂O₇ (360–1045 K) and Nd₂Sn₂O₇ (360–1030 K) has been studied using differential scanning calorimetry. The thermodynamic properties of the compounds (changes in enthalpy, entropy, and the reduced Gibbs energy) have been calculated by the experimental data of C_p = f(T).     

Magnetic phases in UNi<Subscript>2</Subscript>Si<Subscript>2</Subscript>

The tetragonal compound UNi₂Si₂ exhibits in zero magnetic field three different antiferromagnetic phases belowT _N =124 K. They are formed by ferromagnetic basal planes, which are antiferromagnetically coupled along thec-axis with the propagation vectorq=(0, 0, q _z ). Two additional order-order magnetic phase transitions are observed below T _N , namely atT ₁=108 K and T ₂=40 K in zero magnetic field. All three phases exhibit strong uniaxial anisotropy confining the U moments to a direction parallel to the c-axis. UNi₂Si₂ single crystals were studied in detail by measuring bulk thermodynamic properties, such as thermal expansion, resistivity, susceptibility, and specific heat. A microscopic study using neutron diffraction was performed in magnetic fields up to 14.5 T parallel to the c-axis, and a complex magnetic phase diagram has been determined. Here, we present the analysis of specific-heat data measured in magnetic fields up to 14 T compared with the results of the neutron-diffraction study and with other thermodynamic properties of UNi₂Si₂.     

Optical second harmonic generation and its photoinduced dynamics in ferroelectric semiconductor Sn<Subscript>2</Subscript>P<Subscript>2</Subscript>S<Subscript>6</Subscript>

By means of optical pump–probe technique, the ultrafast dynamics of nonlinear optical response of the ferroelectric semiconductor Sn₂P₂S₆ crystal excited with a femtosecond laser pulse has been investigated. It has been shown that, under the action of femtosecond pulses, change in optical second harmonic generation occurs in the sample, which can be due to screening of existing electric polarization.     

Magnetic properties of aerugite Co<Subscript>10</Subscript>Ge<Subscript>3</Subscript>O<Subscript>16</Subscript>

This paper reports on the first study of the temperature and field dependences of the magnetization, heat capacity, and electrical properties of synthesized polycrystalline samples of aerugite Co₁₀Ge₃O₁₆, as well as on x-ray diffraction analysis of this compound. It is shown that the cobalt ions in this compound occupy three nonequivalent positions. The results of the experimental and theoretical studies suggest that aerugite is a ferrimagnet with two uncompensated magnetic moments of the cobalt atom per formula unit.     

NMR spectrum in a Mn<Subscript>3</Subscript>Al<Subscript>2</Subscript>Ge<Subscript>3</Subscript>O<Subscript>12</Subscript> noncollinear antiferromagnet

The dependence of the NMR frequencies on the external magnetic field in a Mn₃Al₂Ge₃O₁₂ non-collinear 12-sublattice antiferromgnet is calculated using the exchange approximation for the spin dynamics.     

Magnetic properties of Pb<Subscript>2</Subscript>Fe<Subscript>2</Subscript>Ge<Subscript>2</Subscript>O<Subscript>9</Subscript> single crystals

Single crystals of Pb₂Fe₂Ge₂O₉ have been grown. They were subjected to X-ray diffraction, magnetic, neutron diffraction, Mössbauer and spin resonance studies. It has been established that Pb₂Fe₂Ge₂O₉ is a weak ferromagnet with a Néel temperature T _N = 46 K, and the exchange and spin-flop transition fields have been estimated. It has been demonstrated that the weak ferromagnetic moment is actually the result of the single-ion anisotropy axes for the magnetic moments of different magnetic sublattices being not collinear.     

Acoustic attenuation in ferroelectric Sn<Subscript>2</Subscript>P<Subscript>2</Subscript>S<Subscript>6</Subscript> crystals

The temperature and frequency dependencies of sound attenuation for the proper uniaxial ferroelectric Sn₂P₂S₆, which has a strong nonlinear interaction of the polar soft optic and fully symmetrical optic modes that is related to the triple well potential, were studied by Brillouin spectroscopy. It was found that the sound velocity anomaly is described in the Landau-Khalatnikov approximation with one relaxation time. For explanation of the observed temperature and frequency dependencies of the sound attenuation in the ferroelectrric phase, the accounting of several relaxation times is needed and, for quantitative calculations, the mode Gruneisen coefficients are more appropriate as interacting parameters than are the electrostrictive coefficients. Relaxational sound attenuation by domain walls also appears in the ferroelectric phase of Sn₂P₂S₆ crystals.     

Low-frequency relaxation processes in Pb<Subscript>5</Subscript>Ge<Subscript>3</Subscript>O<Subscript>11</Subscript> ferroelectric crystals

Measurements and analysis of the temperature and frequency dependences of permittivity and losses and of the electrical resistivity of Pb₅Ge₃O₁₁ ferroelectric crystals at temperatures of 100 to 600 K and frequencies of 0.1 to 100 kHz are reported. The dielectric characteristics of the crystals exhibit, in addition to clearly pronounced anomalies near the Curie point T_C=450 K, less distinct anomalous features of the relaxation character in the range 230–260 K. The data obtained on the effect of various factors (degree of crystal polarization, crystal annealing at different temperatures and in different environments, etc.) on the low-temperature anomalies serve as a basis for discussing the possible mechanisms responsible for these anomalies. It is concluded that the low-temperature dielectric anomalies originate from thermal carrier localization in defect levels in the band gap, which entail the formation of local polarized states.     

Thermal physical properties of Bi<Subscript>4</Subscript>Ge<Subscript>3</Subscript>O<Subscript>12</Subscript> single crystals

The heat capacity, thermal conductivity, thermal diffusivity, and thermal expansion of Bi₄Ge₃O₁₂ single crystals have been measured over a wide temperature range.     

Spin dynamics in oriented ferromagnetic nanowires Ge<Subscript>0.99</Subscript>Co<Subscript>0.01</Subscript>

The magnetic properties of one-dimensional oriented nanowires Ge_0.99Co_0.01 grown in pores of anodized aluminum oxide membranes are investigate using ferromagnetic resonance spectroscopy. The electron spin resonance signals of the magnetically ordered cobalt subsystem and the charge-carrier subsystem are identified. It is revealed that the anisotropy field at 4 K is equal to 400 Oe and aligned parallel to the nanowire axis. The transverse relaxation time of spin waves at 4 K is estimated to be ～10^?10 s. It is shown that the magnetic properties of nanowires are predominantly determined by the ferromagnetism of Co and GeCo alloy clusters.     

Magnetic structure of Er<Subscript>5</Subscript>Ge<Subscript>3</Subscript> at 4.2 K

A symmetry analysis of the possible magnetic structures of Er₅Ge₃ in the ground state is performed using the results of measurements of elastic magnetic neutron scattering at 4.2 K. It is shown that the minimum discrepancy factor R _m ≈9.5% corresponds to a modulated collinear magnetic structure in which the magnetic moments of erbium atoms are oriented along the a ₃ axis of the unit cell of the crystal structure and induce an antiferromagnetic longitudinal spin wave (AFLSW). The magnetic structure is characterized by the wave vector k=2π(0, 0, μ /a ₃) (where μ≈0.293) and the modulation period λ≈3.413a ₃. The magnetic ordering temperature T _N ≈38 K is determined from the temperature dependence of the intensity of magnetic reflections. __________ Translated from Fizika Tverdogo Tela, Vol. 45, No. 9, 2003, pp. 1653–1659. Original Russian Text Copyright ? 2003 by Vokhmyanin, Dorofeev.     

Metal-insulator transition in a radiation-disordered La<Subscript>0.85</Subscript>Sr<Subscript>0.15</Subscript>MnO<Subscript>3</Subscript> manganite

The temperature dependences of the electrical resistivity ρ(T) and the ac magnetic susceptibility χ(T, H = 0) are thoroughly investigated for a perovskite-like lanthanum manganite, namely, La_0.85Sr_0.15MnO₃, which is preliminarily exposed to neutron irradiation with a fluence _F = 2 × 10¹⁹ cm^?2 and then annealed at different temperatures ranging from 200 to 1000°C. The results of the electrical resistance measurements demonstrate that neutron irradiation of the samples leads to the disappearance of the low-temperature insulating phase. As the annealing temperature increases, the insulating phase is not restored and the manganite undergoes a transformation into a metallic phase. Analysis of the magnetic properties shows that, under irradiation, the ferromagnet-paramagnet phase transition temperature T_C decreases and the magnetic susceptibility is reduced significantly. With an increase in the annealing temperature, the phase transition temperature T_C and magnetic susceptibility χ(_{T, H} = 0) increase and gradually approach values close to those for an unirradiated sample. This striking difference in the behavior of the electrical and magnetic properties of the radiation-disordered La_0.85Sr_0.15MnO₃ manganite is explained qualitatively.     

Magnetic behaviour of (Fe<Subscript>0.85</Subscript>Cr<Subscript>0.15</Subscript>)<Subscript>2</Subscript>As

Magnetization and neutron diffraction measurements have been made on the title pseudo-binary of tetragonal anti-ferromagnets Fe₂ As and Cr₂ As. In this system antiferromagnetic (AFM) ordering appears below 310 K. The moments are confined in theab plane but unlike in the end members they are tilted off thea-axis. In addition to the AFM structure a weak ferromagnetic behaviour shows up below∼80 K with a rather low moment of ∼0.07 μB per formula unit at 5 K and under a field of 3 T.     

Electronic structure and half-metallic property of Si<Subscript>3</Subscript>CaC<Subscript>4</Subscript>

The electronic structures and magnetic properties of Si₃CaC₄ in zinc-blende phase has been studied by employing the first-principles method based on density functional theory (DFT). The calculations predict stable ferromagnetic ground state in Si₃CaC₄, resulting from calcium substitution for silicon. The calculated total magnetic moment is 2.00 μ _B per supercell, which mainly arises from the Ca and neighboring C atoms. Band structures and density of states studies show half-metallic (HM) ferromagnetic property for Si₃CaC₄. The ferromagnetic coupling is generally observed between the Ca and C atoms. The ferromagnetism of Si₃CaC₄ can be explained by the hole-mediated double exchange mechanism. The sensitivity of half-metallicity of Si₃CaC₄ as a function of lattice constant is also discussed, and the half-metallicity can be kept in a wider lattice constant range.     

Irradiation of amorphous Ta<Subscript>42</Subscript>Si<Subscript>13</Subscript>N<Subscript>45</Subscript> film with a femtosecond laser pulse

Films of 260 nm thickness, with atomic composition Ta₄₂Si₁₃N₄₅, on 4″ silicon wafers, have been irradiated in air with single laser pulses of 200 femtoseconds duration and 800 nm wave length. As sputter-deposited, the films are structurally amorphous. A laterally truncated Gaussian beam with a near-uniform fluence of ∼0.6 J/cm² incident normally on such a film ablates 23 nm of the film. Cross-sectional transmission electron micrographs show that the surface of the remaining film is smooth and flat on a long-range scale, but contains densely distributed sharp nanoprotrusions that sometimes surpass the height of the original surface. Dark field micrographs of the remaining material show no nanograins. Neither does glancing angle X-ray diffraction with a beam illuminating many diffraction spots. By all evidence, the remaining film remains amorphous after the pulsed femtosecond irradiation.     

Second harmonic generation in thin Ge<Subscript>35</Subscript>Sb<Subscript>5</Subscript>S<Subscript>60</Subscript> films

Generation of the second optical harmonic is investigated in 250 to 1500-nm thick films of Ge₃₅Sb₅S₆₀ chalcogenide glass. It is shown that a decrease in quadratic optical susceptibility in thicker films can result from a decrease in the bulk contribution from the electric dipole to the susceptibility and can be used in nonlinear optical diagnostics of the films.     

Double scattering effect and its application in Si<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Ge<Subscript>x</Subscript> solid solution diagnosis

The effect of double scattering of Ar⁺ ions from the surface of C, Al, Si, Ti, Ge, and In targets is studied by the method of slow scattered ion spectroscopy. Based on this effect, a technique to estimate the cluster phase of germanium atoms in the Si_1−x Ge_x solid solution with a small (5–10%) content of germanium is suggested.