<Emphasis Type="Italic">I–V</Emphasis> characteristics and current instability in a high-temperature superconductor with a nonuniform temperature distribution over the cross section

The effect of a nonuniform temperature distribution in the cross section of a high-temperature superconductor on the formation of its I–V characteristic and the conditions for conservation of a stable distribution of the input current are analyzed. The equations permitting us to determine the boundary values of the electric field and current above which current instability can be developed with allowance for the dimensional effect are derived. It is shown that the input current quench determining the maximal permissible value of the input current decreases if thermal inhomogeneity of electrodynamic states is taken into account in theoretical analysis of its stability conditions. It is found that the limiting admissible values of the electric field and current are nonlinear functions of the thermal resistance of the superconductor, its critical parameters, and external heat-exchange conditions. Therefore, intense cooling of the superconductor does not result in an increase in the current corresponding to the emergence of instability in proportion to the increase in its cross-sectional area or critical current density.     

Electrodynamic stabilization conditions for high-temperature superconducting composites with different types of current-voltage characteristic nonlinearity

The current instability is studied in high-temperature superconducting current-carrying elements with I–V characteristics described by power or exponential equations. Stability analysis of the macroscopic states is carried out in terms of a stationary zero-dimensional model. In linear temperature approximation criteria are derived that allow one to find the maximum allowable values of the induced current, induced electric field intensity, and overheating of the superconductor. A condition is formulated for the complete thermal stabilization of the superconducting composite with regard to the nonlinearity of its I–V characteristic. It is shown that both subcritical and supercritical stable states may arise. In the latter case, the current and electric field intensity are higher than the preset critical parameters of the superconductor. Conditions for these states depending on the properties of the matrix, superconductor’s critical current, fill factor, and nonlinearity of the I–V characteristic are discussed. The obtained results considerably augment the class of allowable states for high-temperature superconductors: it is demonstrated that there exist stable resistive conditions from which superconductors cannot pass to the normal state even if the parameters of these conditions are supercritical.     

Zero-field current-voltage characteristics in high-Tc superconductors

Zero-field current-voltage (I–V) characteristics of various high-temperature superconductor samples are analyzed in the context of the current-temperature (I−T) phase diagram. After establishing the validity and relevance of the phase diagram to these materials, the anisotropy factor is extracted from the slope ofI _c ¹ (T) (the current defined by the onset of resistance). It is concluded that studying theI−V characteristics of amples in the context of theI−T phase diagram is a simple, useful tool for comparing samples. Work supported by the Office of Naval Research.     

Multistable current states in high-temperature superconducting composites

Conditions for current instabilities that arise in high-temperature superconducting composites with essentially nonlinear dependences of the critical current densities and resistivity on the temperature and magnetic induction have been studied. The analysis has been conducted in terms of zero-dimensional models, which has made it possible to formulate general physical mechanisms behind the formation of currents states in superconducting composites according to the external magnetic field induction, cooling conditions, and the properties of the superconductor and cladding. The possible existence of current and temperature stable steps, as well as stable steps of the electric field strength, in the absence of the superconducting–normal transition, has been demonstrated. Reasons for instabilities under multistable current states have been discussed.     

On a current mechanism in Ta2O5 thin films

Electrical conduction in the temperature range of 120–370 K has been studied in sandwiched structures of Al/Ta₂O₅/Si. The tantalum oxide films were prepared by evaporation of tantalum on a p-Si crystal substrate, followed by oxidation at a temperature of 600°C. The temperature-dependent current-voltage (I–V) characteristics are explained on the basis of a phonon-assisted tunnelling model. The same explanation is given for I–V data measured on Ta₂O₅ films by other investigators. From the comparison of experimental data with theory the density of states in the interface layer is derived and the electron-phonon interaction constant is assessed.      

Characteristic features of the formation of the resistive state in a Bi2Sr2CaCu2Oy crystal

The effect of a magnetic field H⊥(ab) on the transverse current-voltage characteristics (IVCs) of the mixed state of a single crystal of the layered superconductor Bi₂Sr₂CaCu₂O_y (BSCCO) is investigated. It is established that in a wide range of temperatures and fields above the irreversibility line the initial part of the IVC is described by the law V∝I ^γ with γ≃1. As the current increases further, this law is replaced by a section where V∝exp(I). It is established that the multivalued, multibranch characteristics, interpreted as a manifestation of an internal Josephson effect, do not change appreciably when the crystal passes into a state with nonzero linear resistance. The character of the dependence of the characteristic switching current on the first resistive branch, I _J (H,T), is determined. Pis’ma Zh. éksp. Teor. Fiz. 70, No. 8, 543–548 (25 October 1999)     

Supercooling in a system of two superconductors

Supercooling in the transition of a type I superconductor to the superconducting state in contact with another superconductor whose critical temperature is higher has been measured. Using aluminum as a test material, it has been demonstrated that at temperatures below the critical temperature T _c and magnetic fields below the critical field H _c(T), aluminum remains in a metastable normal state, in spite of its contact with another superconductor. This means that it is not possible to generate a thermodynamic instability in a superconductor’s electronic system through the “proximity effect” with another superconductor whose critical temperature is higher. This experimental observation demonstrates a radical difference between surface superconductivity, which certainly generates instability in normal electronic states, and superconductivity induced by the proximity effect near a junction with another superconductor. Zh. éksp. Teor. Fiz. 112, 1119–1131 (September 1997)     

Resistive states of the composite superconductors at magnetic flux creep

The effect of magnetic flux creep on the formation of resistive states of the composite superconductors has been studied taking into account their self-heating. The obtained results have been compared with the calculations carried out using the existing thermal stabilization theory, which is based on the model of a stepwise transition from the superconducting to normal state. It has been shown that, over a wide range of the superconductor temperature, this model leads to overrated effective electric resistances of the composite. As a result of its stable self-heating, the notions on the critical current, which determine the maximum transport current and on the resistive transition temperature, the higher of which in the transport current begins dividing between the superconductor and matrix, a loss a physical sense at magnetic flux creep, are used in the existing thermal stabilization theory. As a result, the limits of the theory of thermal stabilization of the composite superconductors can be extended if the theory has been used to describe stable sates at currents, which are higher than the conditionally defined critical current of the composite.     

Effect of composition,thickness and temperature on non-linear I–V curves in vanadium phosphate glasses

Summary Glass layers of (V₂O₅)_1−x (P₂O₅) _x were prepared by melting appropriate mixtures of V₂O₅ and P₂O₅ powders. The measurements ofI–V characteristic curves show three regions of conduction, namely high-resistance state, turnover point with zero-differential resistance region (∂V/∂I=0) and differential negative-resistance region. The turnover point is strongly dependent on composition, sample thickness and temperature. It is found that the increase of the ratio of phosphorus/vanadium reduces conductance as well as it raises the field required to produce turnover behaviour. The data in the range up to the turnover point are discussed on the basis of an electrothermal process. Results of the negative-resistance state could be explained in terms of a hopping mechanism.     

A variable electron beam and its irradiation effect on optical and electrical properties of CdS thin films

A low energy electron accelerator has been constructed and tested. The electron beam can operate in low energy mode (100 eV to 10 keV) having a beam diameter of 8–10 mm. Thin films of CdS having thickness of 100 nm deposited on ITO-coated glass substrate by thermal evaporation method have been irradiated by electron beam in the above instrument. The I–V characteristic is found to be nonlinear before electron irradiation and linear after electron irradiation. The TEP measurement confirms the n-type nature of the material. The TEP and I–V measurements also confirm the modification of ITO/CdS interface with electron irradiation.      

Effect of a pulsed magnetic field on the transverse resistance of a layered superconductor

The field dependences of the transverse resistance of a single crystal of the layered superconductor Bi₂Sr₂CaCu₂O_y (BSCCO-2212) with T _c 0≃92 K are studied in magnetic fields up to 50 T in the perpendicular orientation H⊥(ab). It is established that in the resistive region the resistance is a power-law function of the field, and the temperature dependence of the barrier height for flux creep is obtained. It is found that in a wide temperature range, 50–125 K, the transverse magnetoresistance of the crystal in the normal state and under conditions of superconductivity suppression by a strong magnetic field is negative and can be approximated by a linear law with a temperature-dependent slope. Pis’ma Zh. éksp. Teor. Fiz. 68, No. 5, 420–425 (10 September 1998)     

Influence of the diffusion current on the hysteretic behavior in the system of coupled Josephson junctions

The detailed investigation of the phase dynamics and the I–V curves in the system of coupled Josephson junctions have been carried out. The superconducting, quasiparticle, diffusion, and displacement currents have been calculated as functions of the total current through the system. The role of the diffusion current in the formation of the I–V curves has been studied and the influence of this quantity on the I–V curve branching and the magnitude of the return current has been revealed. The calculation results agree qualitatively with the experimental data.     

Limiting stable states of high-Tc superconductors in the alternating current modes

The limiting current-carrying capacity of high-T _c superconductor and superconducting tape has been studied in the alternating current states. The features that are responsible for their stable formation have been investigated under the conduction-cooled conditions when the operating peak values of the electric field and the current may essentially exceed the corresponding critical values of superconductor. Besides, it has been proved that these peak values are higher than the values of the electric field and the current, which lead to the thermal runaway phenomenon when the current instability onset occurs in the operating modes with direct current. As a result, the stable extremely high heat generation exists in these operating states, which can be called as overloaded states. The limiting stable peak values of charged currents and stability conditions have been determined taking into account the flux creep states of superconductors. The analysis performed has revealed that there exist characteristic times defining the corresponding time windows in the stable development of overloaded states of the alternating current. In order to explain their existence, the basic thermo-electrodynamics mechanisms have been formulated, which have allowed to explain the high stable values of the temperature and the induced electric field before the onset of alternating current instability. In general, it has been shown that the high-T _c superconductors may stably operate in the overloaded alternating current states even under the not intensive cooling conditions at a very high level of heat generation, which is not considered in the existing theory of losses.     

Pulse measurement of the I–V characteristics in Bi-2212 intrinsic junctions

Current-voltage (I–V) characteristics are studied in the intrinsic Josephson junctions of Bi₂Sr₂CaCu₂O_y single crystals. In order to examine the influence of self-heating, a current pulse (∼0.2 μsec) is applied to the mesas of 40 μmϕx0.15 μm patterned on the crystal. As a consequence, in contrast to small characteristic voltageV _c in the continuous-current measurement, theV _c data is found comparable to the BCS value. Moreover, theI–V curve is nearly ohmic forl>l _c , implying that the nonlinearity under the continuous current is due to heating. The quasiparticle resistance forT<T _c is also presented by an estimate from the characteristic voltage.     

Aging-induced abnormality of dielectric response under dc bias in Ba(Zr,Ti)O<Subscript>3</Subscript> thin films

The dielectric properties of fresh and aged Ba(Zr_0.25Ti_0.75)O₃ thin films have been investigated. It is found that the aged sample shows a significant decrease in the dielectric constant compared to the fresh one. Furthermore, the aged sample also exhibits abnormal double-peaks-shape butterfly C–V characteristics, which indicates the defect-dipole stabilized domain and/or domain-wall motions. Meanwhile, we found that double-peaks-shape butterfly C–V characteristics become weak and even disappear with increasing of applied electric field and temperature. The present results are discussed in light of the symmetry-conforming principle of point defects.     

Electrophysical characteristics of nonlinear polymer-silicon composite resistors

The results of analysis of the current-voltage (I–V) characteristic and resistivity of composite resistors (varistors) based on nonpolar propylene and single-crystalline silicon (Si) are considered. The effect of the concentration of the composite components on the IV characteristic and resistivity is detected.     

Capacitance spectroscopic study of the Si/HF-electrolyte interface

Thep-Si/HF-electrolyte interface was characterized by capacitance–voltage (C–V) and current–voltage (I–V) studies. At low frequency, the measured capacitance exhibits two maxima: one in the weak accumulation regime (around 0.8 V [SCE]) and the other in the strong accumulation regime (around 2.6 V [SCE]), both of which disappear at high frequency. The disappearance of the two capacitance maxima is attributed to the slow response of interface traps to high frequencies. The flat-band potential, V_FB, is found to be frequency dependent. The surface state densities corresponding to the two capacitance maxima are estimated to be 3.2×10¹¹ cm^-2 and 2.4×10¹¹ cm^-2, respectively. The in situ I–V characteristics distinguish pore formation, transition and electropolishing regions. Porous Si synthesized at 50 mA cm^-2 gives a broad photoluminescence peak around 2.04 eV at 300 K. Received: 4 September 2000 / Accepted: 9 February 2001 / Published online: 26 April 2001     

Electric field enhancement in field-emission cathodes based on carbon nanotubes

The problem of determining the field enhancement factor in field-emission cathodes based on carbon nanotubes (CNTs) is considered. The electrostatic problem of finding the field enhancement factor for nanotubes with different shapes of the tip as a function of the angle the nanotube makes with the cathode surface and of the interelectrode spacing is solved. The dependence of the electric field enhancement factor on the spacing between vertically oriented nanotubes constituting an array is derived. Making allowance for this dependence gives an optimal value of the surface density of nanotubes in the array at which the emission current density is maximal. The I—V characteristic of CNT-based cathodes is studied with regard to the statistical straggling of their orientation angles. This I—V characteristic is compared with the characteristic obtained with regard to the statistical straggling of the CNT geometrical parameters.     

Photoluminescence of CuGaS2 and heterostructure formation with sputtered ZnS

Summary CuGaS₂ crystals grown by iodine transport exhibit room temperature photoluminescences at 2.45 eV and at 1.44 eV. The spectral distribution of the green emission is shown to be relatively well described by the calculated curve for a direct band-to-band transition withk-selection. The heterojunction formation has been tried between sulfur-treated CuGaS₂ crystals and low-resistivity amorphous ZnS films prepared by sputtering at room temperature. TheI–V characteristic of the diode shows rectifying behaviour, but no injection luminescence has been observed. Paper presented at the ?V International Conference on Ternary and Multinary Compounds?, held in Cagliari, September 14–16, 1982.